MRF8S21100HSR3

Freescale Semiconductor Technical Data Document Number: MRF8S21100H Rev. 1, 3/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 24 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 17.9 18.1 18.3 ηD (%) 33.0 33.0 33.4 Output PAR (dB) 6.4 6.4 6.3 ACPR (dBc) --38.7 --38.2 --37.2 MRF8S21100HR3 MRF8S21100HSR3 2110-2170 MHz, 24 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 138 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 100 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 14. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (2,3) CW Operation @ TC = 25°C Derate above 25°C Symbol VDSS VGS VDD Tstg TC TJ CW CASE 465-06, STYLE 1 NI-780 MRF8S21100HR3 CASE 465A-06, STYLE 1 NI-780S MRF8S21100HSR3 Value --0.5, +65 --6.0, +10 32, +0 --65 to +150 150 225 108 0.57 Unit Vdc Vdc Vdc °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 77°C, 24 W CW, 28 Vdc, IDQ = 700 mA, 2140 MHz Case Temperature 80°C, 100 W CW(1), 28 Vdc, IDQ = 700 mA, 2140 MHz Symbol RθJC Value (3,4) 0.48 0.45 Unit °C/W 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010--2011. All rights reserved. MRF8S21100HR3 MRF8S21100HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 700 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 700 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.5 Adc) VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 — 4.0 0.1 2.0 2.7 5.4 0.24 2.7 — 7.0 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 24 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps ηD PAR ACPR IRL 17.2 31.0 5.9 — — 18.3 33.4 6.3 --37.2 --12 20.2 — — --36.0 --7 dB % dB dBc dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 24 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 17.9 18.1 18.3 ηD (%) 33.0 33.0 33.4 Output PAR (dB) 6.4 6.4 6.3 ACPR (dBc) --38.7 --38.2 --37.2 IRL (dB) --18 --16 --12 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF8S21100HR3 MRF8S21100HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 36 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 60 MHz Bandwidth @ Pout = 24 W Avg. Gain Variation over Temperature (--30°C to +80°C) Output Power Variation over Temperature (--30°C to +80°C) (1) Symbol P1dB IMDsym Min — — Typ 100 40 Max — — Unit W MHz Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, 2110--2170 MHz Bandwidth VBWres GF ∆G ∆P1dB — — — — 50 0.4 0.011 0.005 — — — — MHz dB dB/°C dB/°C 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF8S21100HR3 MRF8S21100HSR3 RF Device Data Freescale Semiconductor 3 R2 R1 VGG C3 C5 C6 C8 C9 -C12 VDD + R3 CUT OUT AREA C13 C7 C10 C11 MRF8S21100H Rev 0 Part Number ATC100B6R8CT500XT ATC100B1R6BT500XT ATC100B0R2BT500XT 293D106X9050E2TE3 227CKS050M ATC100B5R6CT500XT CRCW12062K00FKEA CRCW120610R0JNEA AD255A Manufacturer ATC ATC ATC Vishay Illinois Capacitor ATC Vishay Vishay Arlon C1 C4 C2 Figure 1. MRF8S21100HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S21100HR3(HSR3) Test Circuit Component Designations and Values Part C1, C3, C6, C7 C2 C4 C5, C8, C9, C10, C11 C12 C13 R1, R2 R3 PCB Description 6.8 pF Chip Capacitors 1.6 pF Chip Capacitor 0.2 pF Chip Capacitor 10 μF, 50 V Tantalum Capacitors 220 μF, 50 V Electrolytic Capacitor, Radial 5.6 pF Chip Capacitor 2 KΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor 0.030″, εr = 2.55 MRF8S21100HR3 MRF8S21100HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) VDD = 28 Vdc, Pout = 24 W (Avg.), IDQ = 700 mA 19.5 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 19 Gps, POWER GAIN (dB) 18.5 18 17.5 17 16.5 16 15.5 ACPR IRL PARC Gps ηD Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 20 34.5 34 33.5 33 32.5 --34 --35 ACPR (dBc) --36 --37 --38 2100 2120 2140 2160 2180 2200 --39 2220 IRL, INPUT RETURN LOSS (dB) --7.5 --10 --12.5 --15 --17.5 --20 --1 --1.2 --1.4 --1.6 --1.8 --2 PARC (dB) 15 2060 2080 f, FREQUENCY (MHz) Figure 2. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 24 Watts Avg. --10 --20 --30 --40 --50 --60 IM7--L IM7--U 1 10 TWO--TONE SPACING (MHz) 100 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, Pout = 36 W (PEP), IDQ = 700 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz IM3--L IM3--U IM5--U IM5--L Figure 3. Intermodulation Distortion Products versus Two-Tone Spacing 19 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 18.5 Gps, POWER GAIN (dB) 18 17.5 17 16.5 16 1 0 --1 --2 --3 --4 --5 --1 dB = 22 W Gps --2 dB = 30 W --3 dB = 40 W PARC 20 10 60 70 ηD, DRAIN EFFICIENCY (%) 60 50 40 30 --20 --25 --30 --35 --40 --45 --50 ACPR (dBc) VDD = 28 Vdc, IDQ = 700 mA, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth ACPR ηD Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 10 20 30 40 50 Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power MRF8S21100HR3 MRF8S21100HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 22 VDD = 28 Vdc, IDQ = 700 mA, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 20 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Gps 18 16 2110 MHz 14 12 10 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 2140 MHz 2170 MHz ηD ACPR 60 50 ηD, DRAIN EFFICIENCY (%) 40 30 2170 MHz 2140 MHz 2110 MHz 20 10 0 200 0 --10 --20 --30 --40 --50 --60 ACPR (dBc) Gps, POWER GAIN (dB) Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 24 20 16 GAIN (dB) 12 8 4 0 1800 VDD = 28 Vdc Pin = 0 dBm IDQ = 700 mA 1900 2000 2100 2200 2300 2400 2500 Gain 10 5 0 --5 IRL --10 --15 --20 2600 IRL (dB) f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response MRF8S21100HR3 MRF8S21100HSR3 6 RF Device Data Freescale Semiconductor W-CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 1 2 3 4 5 6 7 8 9 10 PEAK--TO--AVERAGE (dB) 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW +ACPR in 3.84 MHz Integrated BW 3.84 MHz Channel BW Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal Figure 8. Single-Carrier W-CDMA Spectrum MRF8S21100HR3 MRF8S21100HSR3 RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, IDQ = 700 mA, Pout = 24 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource Ω 4.41 -- j6.05 4.38 -- j5.67 4.33 -- j5.29 4.33 -- j4.91 4.33 -- j4.54 4.33 -- j4.17 4.31 -- j3.80 4.32 -- j3.39 4.35 -- j2.99 Zload Ω 3.03 -- j3.64 2.96 -- j3.45 2.89 -- j3.26 2.83 -- j3.10 2.75 -- j2.94 2.69 -- j2.75 2.62 -- j2.50 2.65 -- j2.24 2.67 -- j2.04 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S21100HR3 MRF8S21100HSR3 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 700 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 56 55 Pout, OUTPUT POWER (dBm) 54 53 52 51 50 49 48 47 46 45 27 28 29 30 31 32 33 34 35 36 37 38 2140 MHz 2170 MHz 2110 MHz 2140 MHz 2170 MHz Actual 2110 MHz Ideal Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 2110 2140 2170 P1dB Watts 141 141 138 dBm 51.5 51.5 51.4 166 162 158 P3dB Watts dBm 52.2 52.1 52.0 Test Impedances per Compression Level f (MHz) 2110 2140 2170 P1dB P1dB P1dB Zsource Ω 3.50 -- j7.47 4.21 -- j7.53 6.39 -- j8.09 Zload Ω 1.65 -- j3.64 1.57 -- j3.70 1.66 -- j3.68 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S21100HR3 MRF8S21100HSR3 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS MRF8S21100HR3 MRF8S21100HSR3 10 RF Device Data Freescale Semiconductor MRF8S21100HR3 MRF8S21100HSR3 RF Device Data Freescale Semiconductor 11 MRF8S21100HR3 MRF8S21100HSR3 12 RF Device Data Freescale Semiconductor MRF8S21100HR3 MRF8S21100HSR3 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8S21100H and MRF8S21100HS parts will be available for 2 years after release of MRF8S21100H and MRF8S21100HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8S21100H and MRF8S21100HS in the R3 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Oct. 2010 Mar. 2011 • Initial Release of Data Sheet • Corrected VGG(Q) VDD value from 30 Vdc to 28 Vdc in On Characteristics table to reflect actual test measurement condition, p. 2 Description MRF8S21100HR3 MRF8S21100HSR3 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010--2011. All rights reserved. MRF8S21100HR3 MRF8S21100HSR3 Document Number: RF Device Data MRF8S21100H Rev. 1, 3/2011 Freescale Semiconductor 15