MRF8S21172HR3

Freescale Semiconductor Technical Data Document Number: MRF8S21172H Rev. 0, 3/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1350 mA, Pout = 42 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 17.3 17.4 17.5 ηD (%) 32.6 32.0 31.6 Output PAR (dB) 5.9 6.0 5.9 ACPR (dBc) --35.8 --35.9 --35.0 MRF8S21172HR3 MRF8S21172HSR3 2110-2170 MHz, 42 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 193 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 132 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 13. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C (1,2) CASE 465-06, STYLE 1 NI-780 MRF8S21172HR3 CASE 465A-06, STYLE 1 NI-780S MRF8S21172HSR3 Symbol VDSS VGS VDD Tstg TC TJ CW Value --0.5, +65 --6.0, +10 32, +0 --65 to +150 150 225 196 0.98 Unit Vdc Vdc Vdc °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 71°C, 42 W CW, 28 Vdc, IDQ = 1350 mA, 2170 MHz Case Temperature 84°C, 160 W CW(4), 28 Vdc, IDQ = 1350 mA, 2170 MHz Symbol RθJC Value (2,3) 0.41 0.41 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. © Freescale Semiconductor, Inc., 2011. All rights reserved. MRF8S21172HR3 MRF8S21172HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 258 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1350 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1350 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.5 Adc) VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 — 4.5 0.1 2.0 2.7 5.4 0.24 2.7 — 6.0 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1350 mA, Pout = 42 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps ηD PAR ACPR IRL 16.5 30.4 5.6 — — 17.5 31.6 5.9 --35.0 --13 19.5 — — --33.2 --8 dB % dB dBc dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1350 mA, Pout = 42 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 17.3 17.4 17.5 ηD (%) 32.6 32.0 31.6 Output PAR (dB) 5.9 6.0 5.9 ACPR (dBc) --35.8 --35.9 --35.0 IRL (dB) --14 --14 --13 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF8S21172HR3 MRF8S21172HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 104 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 60 MHz Bandwidth @ Pout = 42 W Avg. Gain Variation over Temperature (--30°C to +85°C) Output Power Variation over Temperature (--30°C to +85°C) Symbol P1dB IMDsym Min — — Typ 132 20 Max — — Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1350 mA, 2110--2170 MHz Bandwidth VBWres GF ∆G ∆P1dB — — — — 58 0.25 0.017 0.003 — — — — MHz dB dB/°C dB/°C MRF8S21172HR3 MRF8S21172HSR3 RF Device Data Freescale Semiconductor 3 R1 C9 R2 C8 C4 C5 R3 C28 C2 C31 C3 C1 C30 C29 C32 C10 C11 C16 C20 C24 C12 C21 C26 C27 C13 R4 C18 C22 C19 MRF8S21172 Rev. 0 C6 C7 C14 C15 C17 C23 C25 Figure 1. MRF8S21172HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S21172HR3(HSR3) Test Circuit Component Designations and Values Part C1, C5, C7, C11, C15, C16, C17, C26, C27 C2 C3 C4, C6, C10, C12, C13, C14 C8, C9, C20, C21, C22, C23 C18, C19 C24, C25 C28, C29 C30 C31, C32 R1, R2 R3, R4 PCB Description 68 pF Chip Capacitors 1.3 pF Chip Capacitor 1.5 pF Chip Capacitor 0.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 1.1 pF Chip Capacitors 330 μF, 63 V Electrolytic Capacitors 0.9 pF Chip Capacitors 0.6 pF Chip Capacitor 0.5 pF Chip Capacitors 2 kΩ, 1/4 W Chip Resistors 2.37 Ω, 1/4 W Chip Resistors 0.030″, εr = 3.55 Part Number ATC800B680JT500XT ATC800B1R3BT500XT ATC800B1R5BT500XT ATC800B0R8BT500XT GRM55DR61H106KA88L ATC800B1R1BT500XT MCRH63V337M13X21--RH ATC800B0R9BT500XT ATC800B0R6BT500XT ATC800B0R5BT500XT CRCW12062K00FKEA CRCW12062R37FNEA RF--35A2 ATC ATC ATC ATC Murata ATC Multicomp ATC ATC ATC Vishay Vishay Taconic Manufacturer MRF8S21172HR3 MRF8S21172HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) 18 17.9 17.8 Gps, POWER GAIN (dB) 17.7 17.6 17.5 17.4 17.3 17.2 17.1 ACPR 17 2060 2080 2100 35 VDD = 28 Vdc, Pout = 42 W (Avg.), IDQ = 1350 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 34 33 ηD 32 Gps Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF PARC IRL 31 --31 --32 ACPR (dBc) --33 --34 --35 2140 2160 2180 2200 --36 2220 IRL, INPUT RETURN LOSS (dB) --10 --11 --12 --13 --14 --15 --1.4 --1.6 --1.8 --2 --2.2 --2.4 PARC (dB) 2120 f, FREQUENCY (MHz) Figure 2. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 42 Watts Avg. --10 --20 --30 --40 --50 --60 IM7--L IM7--U 1 10 TWO--TONE SPACING (MHz) 100 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, Pout = 104 W (PEP), IDQ = 1350 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz IM3--U IM3--L IM5--U IM5--L Figure 3. Intermodulation Distortion Products versus Two-Tone Spacing 18.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 18 Gps, POWER GAIN (dB) 17.5 17 16.5 16 15.5 1 0 --1 --2 --3 --4 --5 --1 dB = 35 W --2 dB = 49 W PARC --3 dB = 65 W Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 20 20 30 40 50 60 70 Pout, OUTPUT POWER (WATTS) 44 ηD, DRAIN EFFICIENCY (%) 40 ACPR ηD 36 32 28 24 --20 --25 --30 --35 --40 --45 --50 ACPR (dBc) VDD = 28 Vdc, IDQ = 1350 mA, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Gps Figure 4. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power MRF8S21172HR3 MRF8S21172HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 22 20 Gps, POWER GAIN (dB) 18 16 Gps 2140 MHz 2170 MHz 2110 MHz 2110 MHz 2170 MHz 2140 MHz ACPR 30 2110 MHz 2140 MHz 2170 MHz 10 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 0 200 --60 20 10 ηD 50 ηD, DRAIN EFFICIENCY (%) 40 --10 --20 --30 --40 --50 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 1.8 3.6 60 0 VDD = 28 Vdc, IDQ = 1350 mA, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB 14 @ 0.01% Probability on CCDF 12 Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 24 20 16 GAIN (dB) 12 8 4 0 1700 VDD = 28 Vdc Pin = 0 dBm IDQ = 1350 mA 1800 1900 2000 2100 2200 2300 2400 IRL 0 --3 --6 --9 --12 --15 --18 2500 IRL (dB) 3.84 MHz Channel BW 0 Gain f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W-CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 1 2 3 4 5 6 7 8 9 10 PEAK--TO--AVERAGE (dB) 0.01 0.001 0.0001 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal MRF8S21172HR3 MRF8S21172HSR3 6 Figure 8. Single-Carrier W-CDMA Spectrum RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 1350 mA, Pout = 42 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource Ω 7.06 -- j2.80 6.94 -- j2.81 6.79 -- j2.83 6.65 -- j2.84 6.50 -- j2.84 6.35 -- j2.86 6.19 -- j2.88 6.02 -- j2.90 5.84 -- j2.92 Zload Ω 0.74 -- j2.83 0.84 -- j3.41 0.96 -- j4.04 1.08 -- j4.72 1.23 -- j5.42 1.44 -- j6.17 1.73 -- j6.99 2.13 -- j7.91 2.66 -- j8.95 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S21172HR3 MRF8S21172HSR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 1350 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Output Power f (MHz) 2110 2140 2170 Zsource (Ω) 5.81 -- j7.39 7.36 -- j5.98 9.91 -- j3.25 Zload (1) (Ω) 1.52 -- j3.75 1.60 -- j3.97 1.43 -- j4.22 P1dB (dBm) 52.9 52.8 52.8 (W) 195 191 191 ηD (%) 50.3 49.0 49.1 (dBm) 53.7 53.7 53.7 P3dB (W) 234 234 234 ηD (%) 50.9 50.7 51.1 (1) Load impedance for optimum P1dB power. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Device Under Test Output Load Pull Tuner Z source Z load Figure 10. Load Pull Performance — Maximum P1dB Tuning VDD = 28 Vdc, IDQ = 1350 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Drain Efficiency f (MHz) 2110 2140 2170 Zsource (Ω) 5.81 -- j7.39 7.36 -- j5.98 9.91 -- j3.25 Zload (1) (Ω) 3.31 -- j2.75 3.06 -- j2.54 2.96 -- j2.98 P1dB (dBm) 51.4 51.7 51.8 (W) 138 148 151 ηD (%) 57.9 57.6 57.0 (dBm) 52.1 52.2 52.4 P3dB (W) 162 166 174 ηD (%) 60.6 60.4 60.4 (1) Load impedance for optimum P1dB efficiency. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Device Under Test Output Load Pull Tuner Z source Z load Figure 11. Load Pull Performance — Maximum Efficiency Tuning MRF8S21172HR3 MRF8S21172HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S21172HR3 MRF8S21172HSR3 RF Device Data Freescale Semiconductor 9 MRF8S21172HR3 MRF8S21172HSR3 10 RF Device Data Freescale Semiconductor MRF8S21172HR3 MRF8S21172HSR3 RF Device Data Freescale Semiconductor 11 MRF8S21172HR3 MRF8S21172HSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8S21172H and MRF8S21172HS parts will be available for 2 years after release of MRF8S21172H and MRF8S21172HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8S21172H and MRF8S21172HS in the R3 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Mar. 2011 • Initial Release of Data Sheet Description MRF8S21172HR3 MRF8S21172HSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF8S21172HR3 MRF8S21172HSR3 1Rev. 0, 3/2011 4 Document Number: MRF8S21172H RF Device Data Freescale Semiconductor