MRF8S23120HSR3

Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 2300 MHz 2350 MHz 2400 MHz Gps (dB) 16.0 16.3 16.6 ηD (%) 31.9 30.9 31.2 Output PAR (dB) 6.1 6.4 6.3 ACPR (dBc) --37.1 --37.9 --37.5 MRF8S23120HR3 MRF8S23120HSR3 2300-2400 MHz, 28 W AVG., 28 V LTE LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 5:1 VSWR, @ 30 Vdc, 2350 MHz, 138 Watts CW (1) Output Power (2 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 107 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (2,3) CW Operation @ TC = 25°C Derate above 25°C Symbol VDSS VGS VDD Tstg TC TJ CW CASE 465-06, STYLE 1 NI-780 MRF8S23120HR3 CASE 465A-06, STYLE 1 NI-780S MRF8S23120HSR3 Value --0.5, +65 --6.0, +10 32, +0 --65 to +150 150 225 109 0.52 Unit Vdc Vdc Vdc °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 76°C, 28 W CW, 28 Vdc, IDQ = 800 mA, 2400 MHz Case Temperature 80°C, 120 W CW(1), 28 Vdc, IDQ = 800 mA, 2400 MHz Symbol RθJC Value (3,4) 0.50 0.47 Unit °C/W 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010. All rights reserved. MRF8S23120HR3 MRF8S23120HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Symbol IDSS IDSS IGSS Min — — — Typ — — — Max 10 1 1 Unit μAdc μAdc μAdc Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 172 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 800 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.72 Adc) VGS(th) VGS(Q) VDS(on) 1.0 1.8 0.1 1.8 2.6 0.15 2.5 3.3 0.3 Vdc Vdc Vdc Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 28 W Avg., f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps ηD PAR ACPR IRL 14.5 29.0 5.7 — — 16.0 31.9 6.1 --37.1 --12 17.5 — — --35.0 --7 dB % dB dBc dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 28 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 2300 MHz 2350 MHz 2400 MHz 1. Part internally matched both on input and output. (continued) Gps (dB) 16.0 16.3 16.6 ηD (%) 31.9 30.9 31.2 Output PAR (dB) 6.1 6.4 6.3 ACPR (dBc) --37.1 --37.9 --37.5 IRL (dB) --12 --19 --18 MRF8S23120HR3 MRF8S23120HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min — — Typ 107 13 Max — — Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, 2300--2400 MHz Bandwidth Pout @ 1 dB Compression Point, CW IMD Symmetry @ 84 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 100 MHz Bandwidth @ Pout = 28 W Avg. Gain Variation over Temperature (--30°C to +85°C) Output Power Variation over Temperature (--30°C to +85°C) (1) P1dB IMDsym VBWres GF ∆G ∆P1dB — — — — 62 0.6 0.002 0.008 — — — — MHz dB dB/°C dB/°C 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF8S23120HR3 MRF8S23120HSR3 RF Device Data Freescale Semiconductor 3 B1 C16 C8 C14 C6* R1 C4 CUT OUT AREA C13 C2 C5 C1 C15 C3 C7* C10 C12 MRF8S23120H/S Rev. 0 *C6 and C7 are mounted vertically. Figure 1. MRF8S23120HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S23120HR3(HSR3) Test Circuit Component Designations and Values Part B1 C1, C4 C2, C15 C3 C5, C6, C7 C8 C9, C10, C11, C12, C14 C13 C16 R1 PCB Ferrite Bead 5.6 pF Chip Capacitors 0.5 pF Chip Capacitors 1.8 pF Chip Capacitor 8.2 pF Chip Capacitors 3.3 μF, 100 V Chip Capacitor 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitor 330 nF, 100 V Chip Capacitor 4.75 Ω, 1/4 W Chip Resistor 0.030″, εr = 2.55 Description Part Number MPZ2012S300A ATC100B5R6CT500XT ATC100B0R5BT500XT ATC100B1R5BT500XT ATC100B8R2CT500XT C5750X7R2A335MT C5750X7R1H106KT MCGPR63V477M13X26--RH C3225JB2A334KT CRCW12064R75FNEA AD255A Manufacturer TDK ATC ATC ATC ATC TDK TDK Multicomp TDK Vishay Arlon MRF8S23120HR3 MRF8S23120HSR3 4 RF Device Data Freescale Semiconductor + C9 C11 TYPICAL CHARACTERISTICS VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 800 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ηD, DRAIN EFFICIENCY (%) 17.2 17 16.8 Gps, POWER GAIN (dB) 16.6 16.4 16.2 16 15.8 15.6 15.4 15.2 2290 ACPR 2305 2320 2335 2350 2365 2380 2395 IRL Gps PARC ηD 34 33 32 31 30 --34 --35 ACPR (dBc) --36 --37 --38 --39 2410 IRL, INPUT RETURN LOSS (dB) --10 --15 --20 --25 --30 --35 --1 --1.2 --1.4 --1.6 --1.8 --2 PARC (dB) f, FREQUENCY (MHz) Figure 2. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 28 Watts Avg. --10 --20 --30 --40 --50 --60 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, Pout = 84 W (PEP), IDQ = 800 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2350 MHz IM3--U IM3--L IM5--U IM5--L IM7--L IM7--U 1 10 TWO--TONE SPACING (MHz) 100 Figure 3. Intermodulation Distortion Products versus Two-Tone Spacing 17 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 16.6 Gps, POWER GAIN (dB) 16.2 15.8 15.4 15 14.6 1 0 --1 --2 --3 --4 --5 ACPR --1 dB = 26.5 W --2 dB = 36.5 W PARC Gps 20 10 0 65 60 ηD, DRAIN EFFICIENCY (%) 50 ηD 40 30 --20 --25 --30 --35 --40 --45 --50 ACPR (dBc) VDD = 28 Vdc, IDQ = 800 mA, f = 2350 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth --3 dB = 48.5 W Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 15 25 35 45 55 Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power MRF8S23120HR3 MRF8S23120HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 17.5 16.5 Gps, POWER GAIN (dB) 15.5 14.5 2400 MHz 2350 MHz Gps ηD 60 50 ηD, DRAIN EFFICIENCY (%) 40 30 2400 MHz 2350 MHz 20 10 0 100 0 --10 --20 --30 --40 --50 --60 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 1.8 3.6 2300 MHz VDD = 28 Vdc, IDQ = 800 mA 2400 MHz Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth 13.5 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 12.5 11.5 1 ACPR 10 2300 MHz 2350 MHz 2300 MHz Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 24 20 16 GAIN (dB) 12 IRL 8 4 0 1800 --20 --30 --40 2600 VDD = 28 Vdc Pin = 0 dBm IDQ = 800 mA 20 10 Gain 0 --10 IRL (dB) 3.84 MHz Channel BW 0 1900 2000 2100 2200 2300 2400 2500 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W-CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 1 2 3 4 5 6 7 8 9 10 PEAK--TO--AVERAGE (dB) 0.01 0.001 0.0001 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal MRF8S23120HR3 MRF8S23120HSR3 6 Figure 8. Single-Carrier W-CDMA Spectrum RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 800 mA, Pout = 28 W Avg. f MHz 2290 2305 2320 2335 2350 2365 2380 2395 2410 Zsource Ω 8.41 -- j0.97 8.58 -- j0.55 8.78 -- j0.14 8.99 + j0.29 9.21 + j0.72 9.45 + j1.17 9.71 + j1.62 9.99 + j2.10 10.28 + j2.60 Zload Ω 1.86 -- j4.43 1.83 -- j4.28 1.80 -- j4.14 1.77 -- j4.01 1.74 -- j3.88 1.72 -- j3.77 1.69 -- j3.66 1.66 -- j3.54 1.65 -- j3.43 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S23120HR3 MRF8S23120HSR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 800 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 57 56 Pout, OUTPUT POWER (dBm) 55 54 53 52 51 50 49 48 47 46 29 30 31 32 33 34 35 36 37 38 39 40 2350 MHz 2300 MHz 2400 MHz Actual 2300 MHz 2400 MHz 2350 MHz Ideal Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 2300 2350 2400 P1dB Watts 152 150 147 dBm 51.8 51.8 51.7 185 181 177 P3dB Watts dBm 52.7 52.6 52.5 Test Impedances per Compression Level f (MHz) 2300 2350 2400 P1dB P1dB P1dB Zsource Ω 4.03 -- j5.45 4.63 -- j6.15 5.57 -- j5.96 Zload Ω 2.24 + j0.08 2.21 + j0.35 2.36 + j0.47 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S23120HR3 MRF8S23120HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S23120HR3 MRF8S23120HSR3 RF Device Data Freescale Semiconductor 9 MRF8S23120HR3 MRF8S23120HSR3 10 RF Device Data Freescale Semiconductor MRF8S23120HR3 MRF8S23120HSR3 RF Device Data Freescale Semiconductor 11 MRF8S23120HR3 MRF8S23120HSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Nov. 2010 • Initial Release of Data Sheet Description MRF8S23120HR3 MRF8S23120HSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8S23120HR3 MRF8S23120HSR3 1Rev. 0, 11/2010 4 Document Number: MRF8S23120H RF Device Data Freescale Semiconductor