MRF8S8260HSR3

Freescale Semiconductor Technical Data Document Number: MRF8S8260H Rev. 0, 1/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 70 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 850 MHz 875 MHz 895 MHz Gps (dB) 21.3 21.4 21.1 ηD (%) 36.2 37.4 37.5 Output PAR (dB) 6.5 6.3 6.2 ACPR (dBc) --37.0 --36.7 --36.9 MRF8S8260HR3 MRF8S8260HSR3 850-895 MHz, 70 W AVG. 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 7:1 VSWR, @ 32 Vdc, 875 MHz, 390 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW (1) Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 16. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (2,3) CW Operation @ TC = 25°C Derate above 25°C Symbol VDSS VGS VDD Tstg TC TJ CW CASE 465B-03, STYLE 1 NI-880 MRF8S8260HR3 CASE 465C-02, STYLE 1 NI-880S MRF8S8260HSR3 Value --0.5, +70 --6.0, +10 32, +0 -- 65 to +150 150 225 201 0.94 Unit Vdc Vdc Vdc °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 83°C, 70 W CW, 28 Vdc, IDQ = 1500 mA, 895 MHz Case Temperature 80°C, 260 W CW(1), 28 Vdc, IDQ = 1500 mA, 895 MHz Symbol RθJC Value (3,4) 0.36 0.31 Unit °C/W 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2011. All rights reserved. MRF8S8260HR3 MRF8S8260HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 1380 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.0 Adc) VGS(th) VGS(Q) VDS(on) 1.5 2.3 0.1 2.3 3.0 0.24 3.0 3.8 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 70 W Avg., f = 895 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps ηD PAR ACPR IRL 19.6 35.5 5.8 — — 21.1 37.5 6.2 --36.9 --16 22.6 — — --35.0 --12 dB % dB dBc dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 70 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 850 MHz 875 MHz 895 MHz 1. Part internally matched both on input and output. (continued) Gps (dB) 21.3 21.4 21.1 ηD (%) 36.2 37.4 37.5 Output PAR (dB) 6.5 6.3 6.2 ACPR (dBc) --37.0 --36.7 --36.9 IRL (dB) --9 --13 --16 MRF8S8260HR3 MRF8S8260HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 80 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 45 MHz Bandwidth @ Pout = 70 W Avg. Gain Variation over Temperature (--30°C to +85°C) Output Power Variation over Temperature (--30°C to +85°C) (1) Symbol P1dB IMDsym Min — — Typ 260 (1) 9.7 Max — — Unit W MHz Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, 850--895 MHz Bandwidth VBWres GF ∆G ∆P1dB — — — — 60 0.3 0.016 0.002 — — — — MHz dB dB/°C dB/°C 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF8S8260HR3 MRF8S8260HSR3 RF Device Data Freescale Semiconductor 3 B1 C11 C30 -- R2 C10 C22 C9 R1 C23 C26 C2 C7 C8 C12 C27 C14 C15 CUT OUT AREA C18 C16 C17 C19 C13 C28 C29 C20* C1* C3 C4 C5 C6 C21 C24 C25 C31 MRF8S8260H/HS Rev. 1 *C1 and C20 are mounted vertically. Figure 1. MRF8S8260HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S8260HR3(HSR3) Test Circuit Component Designations and Values Part B1 C1 C2 C3 C4 C5 C7 C6, C8 C9, C20, C22, C23, C24, C25 C10 C11 C12, C13 C14, C16 C15, C17 C18 C19 C21 C26, C27, C28, C29 C30, C31 R1 R2 PCB Description RF Bead 2.7 pF Chip Capacitor 100 pF Chip Capacitor 2.4 pF Chip Capacitor 5.1 pF Chip Capacitor 3.3 pF Chip Capacitors 3.9 pF Chip Capacitors 43 pF Chip Capacitors 4.7 μF, 100 V Chip Capacitor 22 μF Electrolytic Capacitor 8.2 pF Chip Capacitors 3.9 pF Chip Capacitors 3.0 pF Chip Capacitors 0.7 pF Chip Capacitor 4.3 pF Chip Capacitor 0.1 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 470 μF Electrolytic Capacitors 2.0 Ω, 1/4 W Chip Resistor 1 KΩ, 1/4 W Chip Resistor 0.030″, εr = 3.5 Part Number BLM21PG300SN1D ATC100B2R7BT500XT ATC100B101JT500XT ATC100B2R4JT500XT ATC100B5R1CT500XT ATC100B3R3CT500XT ATC100B3R9CT500XT ATC100B430JT500XT GRM55ER72A475KA01B UUD1V220MCL1GS ATC100B8R2CT500XT ATC100B3R9CT500XT ATC100B3R0CT500XT ATC100B0R7BT500XT ATC100B4R3CT500XT ATC100B0R1BT500XT GRM55DR61H106KA88L MCGPR63V477M13X26--RH P2.0VCT--ND CRCW12061K00FKEA TC350 Manufacturer Murata ATC ATC ATC ATC ATC ATC ATC Murata Nichicon ATC ATC ATC ATC ATC ATC Murata Multicomp Panasonic Vishay Arlon MRF8S8260HR3 MRF8S8260HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) 25 24 23 Gps, POWER GAIN (dB) 22 21 20 19 18 17 16 15 820 840 860 IRL PARC 900 920 940 960 Gps ACPR ηD VDD = 28 Vdc, Pout = 70 W (Avg.), IDQ = 1500 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 38 36 34 32 30 --36 ACPR (dBc) --37 --38 --39 --40 --41 880 980 f, FREQUENCY (MHz) 0 --4 --8 --12 --16 --20 IRL, INPUT RETURN LOSS (dB) --1 --1.2 --1.4 --1.6 --1.8 --2 PARC (dB) Figure 2. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 70 Watts Avg. --20 --30 --40 --50 --60 --70 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, Pout = 80 W (PEP), IDQ = 1500 mA Two--Tone Measurements, (f1 + f2)/2 = Center Frequency of 875 MHz IM3--U IM3--L IM5--U IM5--L IM7--L IM7--U 1 10 TWO--TONE SPACING (MHz) 100 Figure 3. Intermodulation Distortion Products versus Two-Tone Spacing 22 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 21.5 Gps, POWER GAIN (dB) 21 20.5 20 19.5 19 1 0 --1 --2 --2 dB = 89.6 W --3 --4 --5 --3 dB = 119.8 W VDD = 28 Vdc, IDQ = 1500 mA, f = 875 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 40 60 80 100 120 Gps 32 PARC 26 20 140 ACPR --1 dB = 63.8 W ηD 44 38 56 50 --25 --30 --35 --40 --45 --50 --55 ACPR (dBc) Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power MRF8S8260HR3 MRF8S8260HSR3 RF Device Data Freescale Semiconductor 5 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS 23 850 MHz 21.5 Gps, POWER GAIN (dB) 20 18.5 17 15.5 14 Gps 895 MHz ηD 875 MHz 875 MHz 895 MHz 850 MHz 66 55 ηD, DRAIN EFFICIENCY (%) 44 33 ACPR 850 MHz 895 MHz 875 MHz 100 22 11 0 400 0 --10 --20 --30 --40 --50 --60 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 1.8 3.6 VDD = 28 Vdc, IDQ = 1500 mA Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 24 Gain 20 16 GAIN (dB) 12 8 4 0 650 IRL VDD = 28 Vdc Pin = 0 dBm IDQ = 1500 mA 725 800 875 950 1025 1100 1175 5 0 --5 --10 --15 --20 1250 IRL (dB) 3.84 MHz Channel BW 0 10 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W-CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 1 2 3 4 5 6 7 8 9 10 PEAK--TO--AVERAGE (dB) 0.01 0.001 0.0001 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal MRF8S8260HR3 MRF8S8260HSR3 6 Figure 8. Single-Carrier W-CDMA Spectrum RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 1500 mA, Pout = 70 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zsource Ω 3.19 -- j1.47 2.98 -- j1.61 2.78 -- j1.75 2.50 -- j1.87 2.20 -- j1.92 1.96 -- j1.79 1.82 -- j1.58 1.74 -- j1.35 1.68 -- j1.12 Zload Ω 1.38 -- j0.80 1.37 -- j0.52 1.38 -- j0.29 1.44 -- j0.14 1.48 -- j0.01 1.52 + j0.12 1.59 + j0.32 1.68 + j0.51 1.77 + j0.61 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S8260HR3 MRF8S8260HSR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 1500 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 63.5 62 Pout, OUTPUT POWER (dBm) 60.5 59 57.5 56 54.5 53 51.5 50 48.5 47 28 29.5 31 32.5 34 35.5 37 38.5 40 41.5 43 44.5 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 851 865 880 895 P1dB Watts 359 366 362 365 dBm 55.5 55.6 55.6 55.6 482 485 477 478 P3dB Watts dBm 56.8 56.9 56.8 56.8 865 MHz 880 MHz 895 MHz 851 MHz Actual 895 MHz 880 MHz 865 MHz 851 MHz Ideal Test Impedances per Compression Level f (MHz) 851 865 880 895 P1dB P1dB P1dB P1dB Zsource Ω 1.46 -- j2.70 1.85 -- j3.04 2.20 -- j3.31 2.53 -- j3.58 Zload Ω 3.02 + j0.04 2.92 + j0.03 2.85 + j0.70 2.50 + j0.76 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S8260HR3 MRF8S8260HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S8260HR3 MRF8S8260HSR3 RF Device Data Freescale Semiconductor 9 MRF8S8260HR3 MRF8S8260HSR3 10 RF Device Data Freescale Semiconductor MRF8S8260HR3 MRF8S8260HSR3 RF Device Data Freescale Semiconductor 11 MRF8S8260HR3 MRF8S8260HSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8S8260H and MRF8S8260HS parts will be available for 2 years after release of MRF8S8260H and MRF8S8260HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8S8260H and MRF8S8260HS in the R3 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Jan. 2011 • Initial Release of Data Sheet Description MRF8S8260HR3 MRF8S8260HSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF8S8260HR3 MRF8S8260HSR3 Document Number: MRF8S8260H Rev. 0, 1/2011 14 RF Device Data Freescale Semiconductor