MRF8S9100HR3_10

Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.3 19.3 19.1 ηD (%) 51.6 52.9 54.1 MRF8S9100HR3 MRF8S9100HSR3 920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 108 Watts CW • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 45 Watts Avg. Gps (dB) 19.1 19.1 19.0 ηD (%) 43 44 45 SR1 @ 400 kHz (dBc) --64.1 --63.6 --62.8 SR2 @ 600 kHz (dBc) --74.5 --74.6 --75.1 EVM (% rms) 1.8 2.0 2.3 CASE 465-06, STYLE 1 NI-780 MRF8S9100HR3 Frequency 920 MHz 940 MHz 960 MHz CASE 465A-06, STYLE 1 NI-780S MRF8S9100HSR3 Features • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value --0.5, +70 --6.0, +10 32, +0 --65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2009--2010. All rights reserved. MRF8S9100HR3 MRF8S9100HSR3 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW, 28 Vdc, IDQ = 500 mA Case Temperature 81°C, 72 W CW, 28 Vdc, IDQ = 500 mA Case Temperature 82°C, 45 W CW, 28 Vdc, IDQ = 700 mA Symbol RθJC Value (1,2) 0.60 0.65 0.69 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 460 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 500 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.7 Adc) Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW VGS(th) VGS(Q) VDS(on) 1.4 2.1 0.1 2.2 2.9 0.17 2.9 3.6 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 72 W CW, f = 920 MHz Gps ηD IRL P1dB Gps (dB) 19.3 19.3 19.1 18 50 — 100 19.3 51.6 --12.4 — 23 — --9 — IRL (dB) --12.4 --14.3 --12.2 dB % dB W Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 72 W CW Frequency 920 MHz 940 MHz 960 MHz ηD (%) 51.6 52.9 54.1 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Part internally input matched. (continued) MRF8S9100HR3 MRF8S9100HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 100 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 72 W CW Gain Variation over Temperature (--30°C to +85°C) Output Power Variation over Temperature (--30°C to +85°C) Symbol P1dB IMDsym Min — — Typ 108 4 Max — — Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, 920--960 MHz Bandwidth VBWres GF ∆G ∆P1dB — — — — 30 0.13 0.02 0.005 — — — — MHz dB dB/°C dB/°C Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 45 W Avg., 920--960 MHz EDGE Modulation Gps (dB) 19.1 19.1 19.0 ηD (%) 43 44 45 SR1 @ 400 kHz (dBc) --64.1 --63.6 --62.8 SR2 @ 600 kHz (dBc) --74.5 --74.6 --75.1 EVM (% rms) 1.8 2.0 2.3 Frequency 920 MHz 940 MHz 960 MHz MRF8S9100HR3 MRF8S9100HSR3 RF Device Data Freescale Semiconductor 3 C7 B1 C22 C21 C20 VGS VDS R1 C6 C15 L1 C11 C4 CUT OUT AREA C8 L2 C9 C12 C10 C16 C17 C18 C19 C1 C2 C3 C5 C13 C14 MRF8S9100H Rev. 2 Figure 1. MRF8S9100HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S9100HR3(HSR3) Test Circuit Component Designations and Values Part B1 C1, C6 C2 C3 C4, C5 C7, C17, C18, C19 C8, C9 C10, C11 C12 C13 C14 C15, C16 C20, C21, C22 L1, L2 R1 PCB Short RF Bead 47 pF Chip Capacitors 5.6 pF Chip Capacitor 7.5 pF Chip Capacitor 9.1 pF Chip Capacitors 10 μF, 35 V Tantalum Capacitors 13 pF Chip Capacitors 2.7 pF Chip Capacitors 6.2 pF Chip Capacitor 1.8 pF Chip Capacitor 20 pF Chip Capacitor 0.56 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 12.5 nH, 4 Turn Inductors 0 Ω, 3 A Chip Resistor 0.030″, εr = 2.55 Description Part Number 2743019447 ATC100B470JT500XT ATC100B5R6BT500XT ATC100B7R5BT500XT ATC100B9R1BT500XT T491D106K035AT ATC100B130BT500XT ATC100B2R7BT500XT ATC100B6R2BT500XT ATC100B1R8BT500XT ATC100B200JT500XT C1825C564J5RAC--TU MCGPR63V477M13X26--RH A04TJLC CRCW12060000Z0EA AD255A--0300--55--11 Manufacturer Fair--Rite ATC ATC ATC ATC Kemet ATC ATC ATC ATC ATC Kemet Multicomp Coilcraft Vishay Arlon MRF8S9100HR3 MRF8S9100HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 21 20 Gps, POWER GAIN (dB) 19 18 17 16 15 800 VDD = 28 Vdc, Pout = 72 W CW, IDQ = 500 mA 820 840 860 880 900 920 940 960 IRL Gps ηD 60 50 40 30 20 10 0 980 1000 ηD, DRAIN EFFICIENCY (%) --5 --10 --15 --20 f, FREQUENCY (MHz) Figure 2. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 72 Watts CW 21 ηD 20 Gps, POWER GAIN (dB) 19 18 17 16 15 800 EVM 820 840 860 880 900 920 940 960 0 980 1000 IRL 40 30 Gps VDD = 28 Vdc, Pout = 46 W Avg. IDQ = 700 mA, EDGE Modulation 20 4 2 50 ηD, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) --5 --10 --15 --20 IRL, INPUT RETURN LOSS (dB) f, FREQUENCY (MHz) Figure 3. Power Gain, Input Return Loss, EVM and Drain Efficiency versus Frequency @ Pout = 46 Watts Avg. --10 20 19 Gps, POWER GAIN (dB) 18 17 16 ηD 10 TWO--TONE SPACING (MHz) 100 15 1 10 Pout, OUTPUT POWER (WATTS) CW Gps 920 MHz 960 MHz 940 MHz 920 MHz VDD = 28 Vdc IDQ = 500 mA 100 30 15 75 60 960 MHz 45 IMD, INTERMODULATION DISTORTION (dBc) IM3--U --30 --40 --50 --60 1 IM7--L IM7--U IM5--U IM3--L IM5--L 200 0 Figure 4. Intermodulation Distortion Products versus Two-Tone Spacing Figure 5. Power Gain and Drain Efficiency versus Output Power MRF8S9100HR3 MRF8S9100HSR3 RF Device Data Freescale Semiconductor 5 ηD, DRAIN EFFICIENCY (%) VDD = 28 Vdc, Pout = 100 W (PEP) IDQ = 500 mA, Two--Tone Measurements --20 (f1 + f2)/2 = Center Frequency of 940 MHz f = 940 MHz EVM, ERROR VECTOR MAGNITUDE (% rms) TYPICAL CHARACTERISTICS 6 EVM, ERROR VECTOR MAGNITUDE (% rms) 5 4 3 2 1 0 800 45 W Avg. VDD = 28 Vdc, IDQ = 700 mA EDGE Modulation --40 SPECTRAL REGROWTH @ 400 kHz (dBc) --45 --50 --55 --60 --65 --70 0 10 20 30 40 50 60 70 80 90 100 Pout, OUTPUT POWER (WATTS) VDD = 28 Vdc, IDQ = 700 mA EDGE Modulation f = 960 MHz 920 MHz 940 MHz Pout = 64 W Avg. 14 W Avg. 820 840 860 880 900 920 940 960 980 1000 f, FREQUENCY (MHz) Figure 6. EVM versus Frequency Figure 7. Spectral Regrowth at 400 kHz versus Output Power 10 8 6 4 2 EVM 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 75 60 45 EVM, ERROR VECTOR MAGNITUDE (% rms) --50 SPECTRAL REGROWTH @ 600 kHz (dBc) --55 --60 940 MHz --65 --70 --75 --80 0 10 20 30 40 50 60 70 80 90 100 Pout, OUTPUT POWER (WATTS) 920 MHz VDD = 28 Vdc, IDQ = 700 mA EDGE Modulation VDD = 28 Vdc, IDQ = 700 mA EDGE Modulation f = 960 MHz 940 MHz f = 960 MHz ηD 920 MHz 960 MHz 30 920 MHz 15 940 MHz 0 100 Figure 8. Spectral Regrowth at 600 kHz versus Output Power 25 20 15 GAIN (dB) 10 5 0 --5 --10 --15 500 600 700 800 900 IRL Gain Figure 9. EVM and Drain Efficiency versus Output Power 15 10 5 IRL (dB) 0 --5 --10 VDD = 28 Vdc Pin = 0 dBm IDQ = 500 mA 1000 1100 --15 --20 --25 1200 f, FREQUENCY (MHz) Figure 10. Broadband Frequency Response MRF8S9100HR3 MRF8S9100HSR3 6 RF Device Data Freescale Semiconductor ηD, DRAIN EFFICIENCY (%) GSM TEST SIGNAL --10 --20 --30 --40 --50 (dB) --60 --70 --80 --90 --100 --110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz Figure 11. EDGE Spectrum VDD = 28 Vdc, IDQ = 500 mA, Pout = 72 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zsource Ω 3.81 -- j1.72 3.99 -- j1.80 4.13 -- j1.97 4.20 -- j2.22 4.14 -- j2.49 3.96 -- j2.74 3.67 -- j2.95 3.31 -- j3.07 2.91 -- j3.09 Zload Ω 1.61 -- j0.48 1.62 -- j0.34 1.62 -- j0.21 1.63 -- j0.09 1.62 + j0.02 1.60 + j0.12 1.57 + j0.22 1.53 + j0.32 1.47 + j0.42 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF8S9100HR3 MRF8S9100HSR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 500 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 57 56 Pout, OUTPUT POWER (dBm) 55 54 53 52 51 50 49 48 47 46 27 28 29 30 31 32 33 34 35 36 37 38 f = 940 MHz f = 960 MHz f = 940 MHz f = 960 MHz f = 920 MHz Actual f = 920 MHz Ideal Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 920 940 960 P1dB Watts 166 158 166 dBm 52.2 52.0 52.2 199 195 209 P3dB Watts dBm 53.0 52.9 53.2 Test Impedances per Compression Level f (MHz) 920 940 960 P1dB P1dB P1dB Zsource Ω 3.96 -- j2.74 3.67 -- j2.95 3.31 -- j3.07 Zload Ω 1.60 + j0.12 1.57 + j0.22 1.53 + j0.32 Figure 13. Pulsed CW Output Power versus Input Power @ 28 V MRF8S9100HR3 MRF8S9100HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S9100HR3 MRF8S9100HSR3 RF Device Data Freescale Semiconductor 9 MRF8S9100HR3 MRF8S9100HSR3 10 RF Device Data Freescale Semiconductor MRF8S9100HR3 MRF8S9100HSR3 RF Device Data Freescale Semiconductor 11 MRF8S9100HR3 MRF8S9100HSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Sept. 2009 Oct. 2010 • Initial Release of Data Sheet • Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the device, p. 2. Description MRF8S9100HR3 MRF8S9100HSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009--2010. All rights reserved. MRF8S9100HR3 MRF8S9100HSR3 1Rev. 1, 10/2010 4 Document Number: MRF8S9100H RF Device Data Freescale Semiconductor