MRF8S9170NR3_10

Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 1, 5/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.3 19.1 18.9 ηD (%) 36.5 36.1 36.0 Output PAR (dB) 6.0 6.1 6.0 ACPR (dBc) --36.6 --36.7 --36.1 MRF8S9170NR3 920-960 MHz, 50 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 250 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ≃ 177 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ CASE 2021-03, STYLE 1 OM-780-2 Value --0.5, +70 --6.0, +10 32, +0 --65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 78°C, 50 W CW, 28 Vdc, IDQ = 1000 mA Case Temperature 82°C, 170 W CW, 28 Vdc, IDQ = 1000 mA Symbol RθJC Value (2,3) 0.38 0.33 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2009--2010. All rights reserved. MRF8S9170NR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 355 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1000 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.9 Adc) VGS(th) VGS(Q) VDS(on) 1.5 2.3 0.1 2.3 3.1 0.19 3 3.8 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 50 W Avg., f = 920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps ηD PAR ACPR IRL 18.0 34.0 5.5 — — 19.3 36.5 6.0 --36.6 --10 21.0 — — --34.5 --7 dB % dB dBc dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 50 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 920 MHz 940 MHz 960 MHz 1. Part internally matched both on input and output. Gps (dB) 19.3 19.1 18.9 ηD (%) 36.5 36.1 36.0 Output PAR (dB) 6.0 6.1 6.0 ACPR (dBc) --36.6 --36.7 --36.1 IRL (dB) --10 --12 --16 (continued) MRF8S9170NR3 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 160 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 50 W Avg. Gain Variation over Temperature (--30°C to +85°C) Output Power Variation over Temperature (--30°C to +85°C) Symbol P1dB IMDsym Min — — Typ 177 17 Max — — Unit W MHz Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, 920--960 MHz Bandwidth VBWres GF ∆G ∆P1dB — — — — 50 0.32 0.01 0.01 — — — — MHz dB dB/°C dBm/°C MRF8S9170NR3 RF Device Data Freescale Semiconductor 3 B1 C28 C6 C7 R1 C8 C5 C18 C20 C22 C24 C26 C4 C1* R2 C9 C12 C14 CUT OUT AREA C11 C13 C15 C10 C17* C2 C3 C16 C19 C21 C23 C25 C27 MRF8S9170N Rev. 0 *C1 and C17 are mounted vertically. Figure 1. MRF8S9170NR3 Test Circuit Component Layout Table 6. MRF8S9170NR3 Test Circuit Component Designations and Values Part B1 C1, C8, C17, C18, C19, C20, C21 C2 C3, C4 C5 C6 C7, C22, C23 C9, C10 C11, C12 C13, C14 C15 C16 C24, C25, C26, C27 C28 R1 R2 PCB Description Short Ferrite Bead 39 pF Chip Capacitors 2.0 pF Chip Capacitor 3.3 pF Chip Capacitors 100 μF, 50 V Electrolytic Capacitor 3.3. μF, 100 V Chip Capacitor 0.1 μF Chip Capacitors 6.8 pF Chip Capacitors 6.2 pF Chip Capacitors 5.6 pF Chip Capacitors 4.7 pF Chip Capacitor 2.2 pF Chip Capacitor 22 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitor 2 KΩ, 1/4 W Chip Resistor 5.1 Ω, 1/4 W Chip Resistor 0.030″, εr = 3.5 Part Number 2743019447 ATC100B390JT500XT ATC100B2R0BT500XT ATC100B3R3CT500XT 476KXM063M C4532JB1H335KT C3216X7R2E104KT ATC100B6R8CT500XT ATC100B6R2BT500XT ATC100B5R6CT500XT ATC100B4R7CT500XT ATC100B2R2JT500XT C5750JF1H226ZT KME63VB471M12x25LL CRCW12062K00FKEA CRCW12065R10FKEA RF--35 ATC ATC ATC Illinois Cap TDK TDK ATC ATC ATC ATC ATC TDK Chemi--Con Vishay Vishay Taconic Manufacturer Fair--Rite MRF8S9170NR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1000 mA Single--Carrier W--CDMA, 3.85 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Gps PARC IRL ACPR 840 860 880 900 920 940 960 f, FREQUENCY (MHz) ηD, DRAIN EFFICIENCY (%) 20 19.8 19.6 Gps, POWER GAIN (dB) 19.4 19.2 19 18.8 18.6 18.4 18.2 18 820 44 42 40 38 36 --27 ACPR (dBc) --29 --31 --33 --35 --37 980 0 --5 --10 --15 --20 IRL, INPUT RETURN LOSS (dB) --1.5 --2 --2.5 --3 --3.5 --4 PARC (dB) Figure 2. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 50 Watts Avg. --5 --10 --15 --20 --25 --30 --35 --40 --45 --50 --55 --60 --65 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1000 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz IM3--U IM5--U IM5--L IM7--U IM7--L 1 10 TWO--TONE SPACING (MHz) 100 IM3--L Figure 3. Intermodulation Distortion Products versus Two-Tone Spacing 21 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 20 Gps, POWER GAIN (dB) 19 18 17 16 15 1 0 --1 --2 --1 dB = 40 W --3 --4 --5 --2 dB = 58.4 W PARC --3 dB = 79.1 W 30 20 40 60 80 100 120 140 160 Pout, OUTPUT POWER (WATTS) ηD Gps 50 40 80 ηD, DRAIN EFFICIENCY (%) ACPR 70 60 --15 --20 --25 --30 --35 --40 --45 ACPR (dBc) VDD = 28 Vdc, IDQ = 1000 mA, f = 940 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 20 Figure 4. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power MRF8S9170NR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 24 22 Gps, POWER GAIN (dB) 20 18 f = 920 MHz Gps 940 MHz 940 MHz VDD = 28 Vdc, IDQ = 1000 mA Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 100 Pout, OUTPUT POWER (WATTS) AVG. 920 MHz 940 MHz 960 MHz ηD 70 60 ηD, DRAIN EFFICIENCY (%) 50 40 30 20 10 200 --20 --25 --30 --35 --40 --45 --50 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 1.8 3.6 16 920 MHz 14 12 10 ACPR 960 MHz Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 24 20 16 GAIN (dB) 12 8 4 0 --4 --8 600 IRL VDD = 28 Vdc Pin = 0 dBm IDQ = 1000 mA Gain 0 --5 --10 --15 --20 --25 --30 --35 --40 1200 IRL (dB) 3.84 MHz Channel BW 0 800 1000 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W-CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 1 2 3 4 5 6 7 8 9 10 PEAK--TO--AVERAGE (dB) 0.01 0.001 0.0001 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal MRF8S9170NR3 6 Figure 8. Single-Carrier W-CDMA Spectrum RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 1000 mA, Pout = 50 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zsource Ω 2.34 -- j3.90 2.51 -- j3.75 2.54 -- j3.77 2.37 -- j3.71 2.26 -- j3.50 2.27 -- j3.33 2.28 -- j3.26 2.24 -- j3.19 2.21 -- j3.10 Zload Ω 2.08 -- j1.11 2.07 -- j1.05 2.01 -- j1.09 1.81 -- j1.11 1.58 -- j1.02 1.43 -- j0.89 1.27 -- j0.77 1.10 -- j0.64 0.94 -- j0.47 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S9170NR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 909 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 58 57 Pout, OUTPUT POWER (dBm) 56 55 54 53 52 51 50 30 31 32 33 34 35 36 37 38 f = 940 MHz f = 920 MHz Actual f = 920 MHz Ideal f = 960 MHz f = 940 MHz Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 920 940 960 P1dB Watts 229 217 205 dBm 53.6 53.6 53.1 285 269.2 259 P3dB Watts dBm 54.6 54.3 54.1 Test Impedances per Compression Level f (MHz) 920 940 960 P1dB P1dB P1dB Zsource Ω 4.6 -- j2.8 4.7 -- j2.1 5.2 -- j3.4 Zload Ω 0.8 -- j1.6 0.8 -- j1.6 1.0 -- j1.7 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S9170NR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S9170NR3 RF Device Data Freescale Semiconductor 9 MRF8S9170NR3 10 RF Device Data Freescale Semiconductor MRF8S9170NR3 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Sept. 2009 May 2010 • Initial Release of Data Sheet • Replaced Case Outline 2021--02, Issue A, with 2021--03, Issue B, p. 1, 9--11. Added 4 exposed source tabs at dimension e1 on Sheets 1 and 2. Added dimension e1 0.721″ --0.729″ (18.31--18.52 mm) in the table, revised D1 minimum dimension from 0.730″ (18.54 mm) to 0.720″ (18.29 mm), revised dimension E2 from 0.312″ (7.92 mm) to 0.306″ (7.77 mm), and revised wording of Note 8 on Sheet 3. • Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the device, p. 2 Description MRF8S9170NR3 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009--2010. All rights reserved. MRF8S9170NR3 Document Number: RF Device Data MRF8S9170N Rev. 1, 5/2010 Freescale Semiconductor 13