MRF8S9260HR3

Freescale Semiconductor Technical Data Document Number: MRF8S9260H Rev. 0, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1700 mA, Pout = 75 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 18.8 18.7 18.6 hD (%) 36.0 37.0 38.5 Output PAR (dB) 6.3 6.2 5.9 ACPR (dBc) -39.5 -38.6 -37.1 MRF8S9260HR3 MRF8S9260HSR3 920-960 MHz, 75 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ] 260 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate- Source Voltage Range for Improved Class C Operation • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. CASE 465B-03, STYLE 1 NI-880 MRF8S9260HR3 CASE 465C-02, STYLE 1 NI-880S MRF8S9260HSR3 Table 1. Maximum Ratings Rating Drain-Source Voltage Gate-Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C (1,2) Symbol VDSS VGS VDD Tstg TC TJ CW Value -0.5, +70 -6.0, +10 32, +0 -65 to +150 150 225 280 1.5 Unit Vdc Vdc Vdc °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 75 W CW, 28 Vdc, IDQ = 1800 mA Case Temperature 80°C, 265 W CW, 28 Vdc, IDQ = 1100 mA Symbol RθJC 0.37 0.31 Value (2,3) Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2009. All rights reserved. MRF8S9260HR3 MRF8S9260HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1700 mAdc, Measured in Functional Test) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 4.4 Adc) VGS(th) VGS(Q) VDS(on) 1.5 2.4 0.1 2.3 3.1 0.2 3 3.9 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1700 mA, Pout = 75 W Avg., f = 960 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps ηD PAR ACPR IRL 17.5 36.0 5.5 — — 18.6 38.5 5.9 -37.1 -14 20.0 — — -35.0 -9 dB % dB dBc dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1700 mA, Pout = 75 W Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 920 MHz 940 MHz 960 MHz 1. Part internally matched both on input and output. (continued) Gps (dB) 18.8 18.7 18.6 ηD (%) 36.0 37.0 38.5 Output PAR (dB) 6.3 6.2 5.9 ACPR (dB) -39.5 -38.6 -37.1 IRL (dB) -16 -18 -14 MRF8S9260HR3 MRF8S9260HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1700 mA, 920-960 MHz Bandwidth Pout @ 1 dB Compression Point, CW IMD Symmetry @ 130 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 75 W Avg. Gain Variation over Temperature (-30 °C to +85°C) Output Power Variation over Temperature (-30 °C to +85°C) P1dB IMDsym — 10 — — 260 — W MHz VBWres GF ΔG ΔP1dB — — — — 50 0.2 0.024 0.0075 — — — — MHz dB dB/°C dBm/°C MRF8S9260HR3 MRF8S9260HSR3 RF Device Data Freescale Semiconductor 3 C21 R2 C7 C6 C8 C19 C20 C10 C5 R1 CUT OUT AREA C9 C1 C2 C3 C4 C18 C11 C17 C16* C12 C13 C14 C15 MRF8S9260H Rev. 1 *C16 is mounted vertically. Figure 1. MRF8S9260HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S9260HR3(HSR3) Test Circuit Component Designations and Values Part C1, C6, C9, C12, C16 C2 C3 C4, C5 C7 C8, C13, C14, C19, C20 C10, C11 C15, C21 C17 C18 R1 R2 PCB Description 36 pF Chip Capacitors 0.4 pF Chip Capacitor 4.7 pF Chip Capacitor 8.2 pF Chip Capacitors 4.7 μF, 50 V Chip Capacitor 10 μF, 50 V Chip Capacitors 5.6 pF Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 4.3 pF Chip Capacitor 0.8 pF Chip Capacitor 10 Ω, 1/4 W Chip Resistor 0 Ω, 3.5 A Chip Resistor 0.030″, εr = 3.5 Part Number ATC100B360JT500XT ATC100B0R4BT500XT ATC100B4R7BT500XT ATC100B8R2BT500XT C4532X5R1H475MT C5750X5R1H106MT ATC100B5R6BT500XT 477KXM063M ATC100B4R3BT500XT ATC100B0R8BT500XT CRCW120610R0JKEA CRCW12060000Z0EA RF-35 Manufacturer ATC ATC ATC ATC TDK TDK ATC Illinois Capacitor ATC ATC Vishay Vishay Taconic MRF8S9260HR3 MRF8S9260HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) 21 20.5 20 Gps, POWER GAIN (dB) 19.5 19 18.5 18 17.5 17 16.5 16 900 910 920 930 940 950 960 970 f, FREQUENCY (MHz) IRL PARC ACPR ηD Gps 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF VDD = 28 Vdc, Pout = 75 W (Avg.) IDQ = 1700 mA, Single-Carrier W-CDMA 42 40 38 36 34 -33 -35 ACPR (dBc) -37 -39 -41 -43 980 -9 -1 1 -13 -15 -17 -19 IRL, INPUT RETURN LOSS (dB) 0 -0.5 -1 -1.5 -2 -2.5 PARC (dB) Figure 2. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 75 Watts Avg. -1 0 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, Pout = 250 W (PEP), IDQ = 1700 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz IM3-U -3 0 IM3-L IM5-U -4 0 IM5-L IM7-U -2 0 -5 0 -60 1 10 IM7-L 100 TWO-T ONE SPACING (MHz) Figure 3. Intermodulation Distortion Products versus Two-T one Spacing 21 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 20 Gps, POWER GAIN (dB) 19 18 17 16 15 1 ηD -1 dB = 64 W -1 -2 -3 dB = 122 W -3 -4 -5 35 -2 dB = 88 W PARC VDD = 28 Vdc, IDQ = 1700 mA, f = 940 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 60 85 110 135 20 10 0 160 ACPR Gps 40 30 ηD, DRAIN EFFICIENCY (%) 0 50 -25 -30 -35 -40 -45 -50 ACPR (dBc) 60 -20 Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak-to-Average Ratio Compression (PARC) versus Output Power MRF8S9260HR3 MRF8S9260HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 20 19 Gps, POWER GAIN (dB) Gps 18 17 16 15 14 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. 920 MHz 960 MHz 940 MHz 960 MHz 940 MHz 920 MHz 40 30 20 960 MHz 940 MHz ACPR 920 MHz 10 0 300 60 50 ηD, DRAIN EFFICIENCY (%) -20 -25 -30 -35 -40 -45 -50 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 3.6 VDD = 28 Vdc, IDQ = 1700 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ηD Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 24 20 16 GAIN (dB) 12 8 4 0 600 VDD = 28 Vdc Pin = 0 dBm IDQ = 1700 mA 700 800 900 1000 1100 IRL Gain 0 -3 -6 -9 -12 -15 -18 1200 IRL (dB) 3.84 MHz Channel BW -1.8 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W-CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 2 3 4 5 6 7 8 9 10 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -9 -7.2 -5.4 -3.6 0 1.8 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW PEAK-T O-A VERAGE (dB) Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal Figure 8. Single-Carrier W-CDMA Spectrum MRF8S9260HR3 MRF8S9260HSR3 6 RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 1700 mA, Pout = 75 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zsource W 2.25 - j2.59 2.21 - j2.51 2.16 - j2.46 2.11 - j2.40 1.98 - j2.37 1.87 - j2.29 1.75 - j2.23 1.61 - j2.14 1.46 - j2.03 Zload W 1.93 - j1.63 1.91 - j1.45 1.90 - j1.28 1.90 - j1.14 1.91 - j1.02 1.90 - j0.91 1.89 - j0.83 1.87 - j0.76 1.84 - j0.69 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S9260HR3 MRF8S9260HSR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 1700 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 61 60 59 Pout, OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 50 33 34 35 36 37 38 39 40 41 42 43 44 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB Watts 363 363 363 dBm 55.6 55.6 55.6 P3dB Watts 447 417 437 dBm 56.5 56.2 56.4 920 MHz Actual 960 MHz 920 MHz 940 MHz 940 MHz 960 MHz Ideal f (MHz) 920 940 960 Test Impedances per Compression Level f (MHz) 920 940 960 P1dB P1dB P1dB Zsource Ω 0.94 - j2.68 1.18 - j2.65 1.24 - j3.10 Zload Ω 2.19 - j2.10 2.18 - j2.52 2.72 - j2.11 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S9260HR3 MRF8S9260HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S9260HR3 MRF8S9260HSR3 RF Device Data Freescale Semiconductor 9 MRF8S9260HR3 MRF8S9260HSR3 10 RF Device Data Freescale Semiconductor MRF8S9260HR3 MRF8S9260HSR3 RF Device Data Freescale Semiconductor 11 MRF8S9260HR3 MRF8S9260HSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Dec. 2009 • Initial Release of Data Sheet Description MRF8S9260HR3 MRF8S9260HSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MRF8S9260HR3 MRF8S9260HSR3 Document Number: MRF8S9260H 1Rev. 0, 12/2009 4 RF Device Data Freescale Semiconductor