MRF9030LSR1

Freescale Semiconductor Technical Data Document Number: MRF9030 Rev. 7, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — - 32.5 dBc MRF9030LSR1 ARCHIVE INFORMATION Features • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • • • • Characterized with Series Equivalent Large - Signal Impedance Parameters Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. CASE 360C - 05, STYLE 1 NI - 360S Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value - 0.5, +68 - 0.5, + 15 117 0.67 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Value 1.5 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) © Freescale Semiconductor, Inc., 2008. All rights reserved. MRF9030LSR1 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.7 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss — — — 49.5 26.5 1 — — — pF pF pF VGS(th) VGS(Q) VDS(on) gfs 2 — — — 2.9 3.8 0.19 3 4 — 0.4 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit ARCHIVE INFORMATION (continued) MRF9030LSR1 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 18 19 — dB Symbol Min Typ Max Unit η 37 41.5 — % IMD — - 32.5 - 28 dBc IRL — - 15.5 -9 dB ARCHIVE INFORMATION Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Gps — 19 — dB η — 41.5 — % IMD — - 33 — dBc IRL — - 14 — dB P1dB — 30 — W Gps — 19 — dB η — 60 — % MRF9030LSR1 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION VGG + C7 B1 B2 VDD + C8 C14 C15 + C16 + C17 L1 RF INPUT C5 C9 L2 RF OUTPUT Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7 DUT Z8 Z9 Z10 Z11 Z12 C13 Z13 C2 C3 C4 C6 C10 C11 C12 ARCHIVE INFORMATION B1 B2 C1, C8, C13, C14 C2, C4 C3 C5, C6 C7, C15, C16 C9, C10 C11 C12 C17 L1, L2 Z1 Z2 Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors 0.8 pF to 8.0 pF Trim Capacitors 3.9 pF Chip Capacitor 7.5 pF Chip Capacitors 10 μF, 35 V Tantalum Capacitors 10 pF Chip Capacitors 9.1 pF Chip Capacitor 0.6 pF to 4.5 pF Trim Capacitor 220 μF, 50 V Electrolytic Capacitor 12.5 nH Surface Mount Inductors 0.260″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 PCB 0.500″ x 0.100″ Microstrip 0.215″ x 0.270″ Microstrip 0.315″ x 0.270″ Microstrip 0.160″ x 0.270″ x 0.520″, Taper 0.285″ x 0.520″ Microstrip 0.450″ x 0.270″ Microstrip 0.140″ x 0.270″ Microstrip 0.250″ x 0.060″ Microstrip 0.720″ x 0.060″ Microstrip 0.490″ x 0.060″ Microstrip 0.290″ x 0.060″ Microstrip Taconic RF - 35 - 0300, 30 mil, εr = 3.55 Figure 1. 945 MHz Broadband Test Circuit Schematic C7 VDD VGG C8 C9 L1 RF INPUT C1 C2 C3 C5 C4 C6 C14 L2 C15 C16 C17 C13 CUT OUT AREA C10 C11 C12 RF OUTPUT MRF9030 900 MHz Rev−02 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 945 MHz Broadband Test Circuit Component Layout MRF9030LSR1 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION TYPICAL CHARACTERISTICS Gps η VDD = 26 Vdc Pout = 30 W (PEP) IDQ = 250 mA Two−Tone, 100 kHz Tone Spacing η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 13 12 930 IMD IRL 50 45 40 35 −30 −32 −34 −36 −38 960 −10 −12 −14 −16 −18 ARCHIVE INFORMATION f, FREQUENCY (MHz) Figure 3. Class AB Broadband Circuit Performance 20 19.5 G ps , POWER GAIN (dB) 19 18.5 18 17.5 17 1 10 Pout, OUTPUT POWER (WATTS) PEP VDD = 26 Vdc f1 = 945 MHz, f2 = 945.1 MHz 100 IDQ = 375 mA −20 VDD = 26 Vdc f1 = 945 MHz, f2 = 945.1 MHz 300 mA 250 mA 200 mA −30 IDQ = 200 mA −40 300 mA −50 375 mA −60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 250 mA Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power 22 60 VDD = 26 Vdc IDQ = 250 mA f = 945 MHz 50 40 30 η 20 10 0 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. IMD, INTERMODULATION DISTORTION (dBc) 0 −10 −20 −30 −40 −50 5th Order −60 −70 1 7th Order 10 Pout, OUTPUT POWER (WATTS) PEP 100 3rd Order VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz, f2 = 945.1 MHz G ps , POWER GAIN (dB) 20 18 16 14 12 10 0.1 Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power MRF9030LSR1 RF Device Data Freescale Semiconductor 5 η, DRAIN EFFICIENCY (%) Gps ARCHIVE INFORMATION 935 940 945 950 955 IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 20 Gps 18 G ps , POWER GAIN (dB) 16 η 14 12 10 8 IMD VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz, f2 = 945.1 MHz 40 20 0 −20 −40 −60 Pout, OUTPUT POWER (WATTS) PEP 60 ARCHIVE INFORMATION Figure 8. Power Gain, Efficiency and IMD versus Output Power 1010 MTTF FACTOR (HOURS X AMPS2) 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 9. MTTF Factor versus Junction Temperature MRF9030LSR1 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 1 10 100 ARCHIVE INFORMATION Zo = 5 Ω Zsource f = 930 MHz Zload f = 930 MHz f = 960 MHz f = 960 MHz VDD = 26 V, IDQ = 250 mA, Pout = 30 W PEP f MHz 930 945 960 Zsource Ω 1.34 - j0.1 1.36 - j0.2 1.4 - j0.14 Zload Ω 3.175 + j0.09 3.1 + j0.08 3.0 + j0.05 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance MRF9030LSR1 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION PACKAGE DIMENSIONS A B (FLANGE) A 1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. (FLANGE) B 2 2X D M 2X K M bbb TA M B (LID) R ccc (LID) M TA M B F M N H M ccc TA M B M ARCHIVE INFORMATION E C PIN 3 bbb M (INSULATOR) S (INSULATOR) M T M SEATING PLANE M aaa M TA M B M TA B CASE 360C - 05 ISSUE E NI - 360S MRF9030LSR1 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF9030LSR1 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF REVISION HISTORY The following table summarizes revisions to this document. Revision 7 Date Sept. 2008 Description • Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. • Data sheet archived. Parts no longer manufactured. • Added Revision History, p. 9 ARCHIVE INFORMATION MRF9030LSR1 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION How to Reach Us: Home Page: www.freescale.com ARCHIVE INFORMATION USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF9030LSR1 1Rev. 7, 9/2008 0 Document Number: MRF9030 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Web Support: http://www.freescale.com/support