MRF9045LR1_08

Freescale Semiconductor Technical Data Document Number: MRF9045 Rev. 11, 9/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs NOT RECOMMENDED FOR NEW DESIGN 945 MHz, 45 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 360B - 05, STYLE 1 NI - 360 MRF9045LR1 CASE 360C - 05, STYLE 1 NI - 360S MRF9045LSR1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9045LR1 MRF9045LSR1 Tstg TC TJ Characteristic Thermal Resistance, Junction to Case MRF9045LR1 MRF9045LSR1 Symbol RθJC Symbol VDSS VGS PD Value - 0.5, +65 - 0.5, + 15 125 0.71 175 1 - 65 to +150 150 200 Unit Vdc Vdc W W/°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature °C °C °C Table 2. Thermal Characteristics Value 1.4 1.0 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) © Freescale Semiconductor, Inc., 2008. All rights reserved. MRF9045LR1 MRF9045LSR1 1 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Two - Tone Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 18.8 dB Efficiency — 42% IMD — - 32 dBc • Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power Features • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. MRF9045LR1 MRF9045LSR1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit NOT RECOMMENDED FOR NEW DESIGN Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 350 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) VGS(th) VGS(Q) VDS(on) gfs 2 — — — 3 3.7 0.19 4 4 — 0.4 — Vdc Vdc Vdc S Ciss Coss Crss — — — 69 37 1.5 — — — pF pF pF (continued) MRF9045LR1 MRF9045LSR1 2 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 17 18.8 — dB Symbol Min Typ Max Unit NOT RECOMMENDED FOR NEW DESIGN Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Power Output, 1 dB Compression Point (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA, f1 = 945.0 MHz) Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA, f1 = 945.0 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA, f1 = 945.0 MHz) η 38 42 — % IMD — - 32 - 28 dBc IRL — - 14 -9 dB Gps — 18.5 — dB η — 41 — % IMD — - 33 — dBc IRL — 13 — dB P1dB — 55 — W Gps — 18 — dB η — 60 — % MRF9045LR1 MRF9045LSR1 RF Device Data Freescale Semiconductor 3 NOT RECOMMENDED FOR NEW DESIGN B2 C14 L2 B1 VGG + + C15 + C16 + VDD C17 NOT RECOMMENDED FOR NEW DESIGN L1 Z8 C9 Z9 C8 Z10 Z11 Z12 Z13 C10 C11 C12 RF INPUT Z1 C4 C1 Z2 Z3 Z4 Z5 Z6 Z7 C5 C2 C3 B1 B2 C1, C7, C13, C14 C2, C3, C11 C4, C5, C8, C9 C6, C15, C16 C10 C12 C17 L1, L2 Z1 Z2 Z3 Short Ferrite Bead Surface Mount Long Ferrite Bead Surface Mount 47 pF Chip Capacitors 0.8 - 8.0 pF Gigatrim Variable Trim Capacitors 10 pF Chip Capacitors 10 μF, 35 V Tantalum Surface Mount Chip Capacitors 2.2 pF Chip Capacitor 0.7 pF Chip Capacitor - MRF9045LS 1.3 pF Chip Capacitor - MRF9045 220 μF, 50 V Electrolytic Capacitor 12.5 nH Surface Mount Inductors, Coilcraft 0.260″ x 0.080″ Microstrip 0.610″ x 0.120″ Microstrip 0.260″ x 0.320″ Microstrip Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.360″ x 0.320″ Microstrip 0.240″ x 0.320″ x 0.620″, Taper 0.140″ x 0.620″ Microstrip 0.510″ x 0.620″ Microstrip 0.330″ x 0.320″ Microstrip 0.140″ x 0.320″ Microstrip 0.070″ x 0.080″ Microstrip 0.240″ x 0.080″ Microstrip 0.140″ x 0.080″ Microstrip 0.930″ x 0.080″ Microstrip 0.180″ x 0.080″ Microstrip 0.350″ x 0.080″ Microstrip Arlon GX - 0300 - 55 - 22, 0.03″, εr = 2.55 Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic C6 C17 VGG B1 B2 C7 C14 WB1 WB2 L1 C5 C9 C8 C10 L2 VDD C15 C16 C13 C11 C12 C1 C2 C3 CUT OUT AREA C4 MRF9045 900 MHz Rev−01 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout MRF9045LR1 MRF9045LSR1 4 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN C6 C7 RF OUTPUT Z14 C13 Z15 TYPICAL CHARACTERISTICS h , DRAIN EFFICIENCY (%) 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 IRL 13 12 930 935 940 945 950 f, FREQUENCY (MHz) 955 −36 −38 960 IMD Gps h VDD = 28 Vdc Pout = 45 W (PEP) IDQ = 350 mA Two−Tone Measurement, 100 kHz Tone Spacing 55 50 45 40 −30 −32 −34 NOT RECOMMENDED FOR NEW DESIGN −14 −16 Figure 3. Class AB Broadband Circuit Performance IMD, INTERMODULATION DISTORTION (dBc) 20.0 19.5 G ps , POWER GAIN (dB) 19.0 18.5 18.0 17.5 17.0 16.5 0.5 1 VDD = 28 Vdc f1 = 945 MHz 10 Pout, OUTPUT POWER (WATTS) PEP 100 IDQ = 525 mA 400 mA 350 mA 300 mA −10 −20 −30 −40 −50 −60 −70 350 mA 400 mA VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz IDQ = 300 mA 525 mA 0.5 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) −10 −20 −30 −40 −50 −60 −70 −80 −90 0.5 20 VDD = 28 Vdc IDQ = 350 mA f1 = 945 MHz f2 = 945.1 MHz 3rd Order 19 Gps, POWER GAIN (dB) 18 17 16 15 14 7th Order 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 13 0.1 1 10 h Gps IRL, INPUT RETURN LOSS (dB) −12 70 60 50 40 30 20 VDD = 28 Vdc IDQ = 350 mA f1 = 945 MHz 100 10 0 h, DRAIN EFFICIENCY (%) 5th Order Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain, Efficiency versus Output Power MRF9045LR1 MRF9045LSR1 RF Device Data Freescale Semiconductor 5 NOT RECOMMENDED FOR NEW DESIGN IMD, INTERMODULATION DISTORTION (dBc) NOT RECOMMENDED FOR NEW DESIGN Zo = 5 Ω Zsource f = 960 MHz Zload f = 930 MHz f = 930 MHz f = 960 MHz VDD = 28 V, IDQ = 350 mA, Pout = 45 W PEP f MHz 930 945 960 Zsource Ω 1.02 + j0.06 1.10 + j0.11 1.15 + j0.25 Zload Ω 2.6 + j0.20 2.6 + j0.16 2.6 + j0.10 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 8. Series Equivalent Source and Load Impedance MRF9045LR1 MRF9045LSR1 6 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN PACKAGE DIMENSIONS 2X B G 1 Q aaa M TA M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF NOT RECOMMENDED FOR NEW DESIGN (FLANGE) 2X B 2 D bbb M T A 2X M K B M (LID) R (LID) N ccc M TA C M B M ccc H M TA M B M E F T (INSULATOR) SEATING PLANE (INSULATOR) S DIM A B C D E F G H K M N Q R S aaa bbb ccc M bbb M TA M B M aaa M TA M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A A CASE 360B - 05 ISSUE G NI - 360 MRF9045LR1 MRF9045LR1 MRF9045LSR1 RF Device Data Freescale Semiconductor 7 NOT RECOMMENDED FOR NEW DESIGN 3 NOT RECOMMENDED FOR NEW DESIGN MRF9045LR1 MRF9045LSR1 8 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN MRF9045LR1 MRF9045LSR1 RF Device Data Freescale Semiconductor 9 NOT RECOMMENDED FOR NEW DESIGN PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices NOT RECOMMENDED FOR NEW DESIGN REVISION HISTORY The following table summarizes revisions to this document. Revision 11 Date Sept. 2008 Description • Replaced Case Outline 360C - 05, Issue E with Issue F, p. 8 - 9. • Added Product Documentation and Revision History, p. 10 MRF9045LR1 MRF9045LSR1 10 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF9045LR1 MRF9045LSR1 Document Number: RF Device Data MRF9045 Rev. 11, 9/2008 Freescale Semiconductor 11 NOT RECOMMENDED FOR NEW DESIGN