MRF9060LSR1

Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applications in 26 volt base station equipment. • Typical Two−Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — −31 dBc • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large−Signal Impedance Parameters • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. MRF9060LR1 MRF9060LSR1 945 MHz, 60 W, 26 V LATERAL N−CHANNEL BROADBAND RF POWER MOSFETs CASE 360B−05, STYLE 1 NI−360 MRF9060LR1 CASE 360C−05, STYLE 1 NI−360S MRF9060LSR1 Table 1. Maximum Ratings Rating Drain−Source Voltage Gate−Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9060LR1 MRF9060LSR1 Tstg TJ Symbol VDSS VGS PD Value − 0.5, +65 − 0.5, + 15 159 0.91 219 1.25 − 65 to +150 200 Unit Vdc Vdc W W/°C W W/°C °C °C Storage Temperature Range Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case MRF9060LR1 MRF9060LSR1 Symbol RθJC Value 1.1 0.8 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2004. All rights reserved. MRF9060LR1 MRF9060LSR1 5−1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate−Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) Drain−Source On−Voltage (VGS = 10 Vdc, ID = 1.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss — — — 98 50 2 — — — pF pF pF (continued) VGS(th) VGS(Q) VDS(on) gfs 2 — — — 2.9 3.7 0.17 5.3 4 — 0.4 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit MRF9060LR1 MRF9060LSR1 5−2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) Two−Tone Common−Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two−Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two−Tone Common−Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two−Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Common−Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps 16 17 — dB Symbol Min Typ Max Unit η 36 40 — % IMD — −31 −28 dBc IRL — −16 −9 dB Gps — 17 — dB η — 39 — % IMD — −31 — dBc IRL — −16 — dB P1dB — 70 — W Gps — 17 — dB η — 51 — % Ψ No Degradation In Output Power MRF9060LR1 MRF9060LSR1 RF Device Data Freescale Semiconductor 5−3 VGG C6 RF INPUT B1 + C7 L1 C4 Z1 C1 Z2 Z3 Z4 C2 Z5 Z6 Z7 C3 Z8 C5 Z9 Z10 DUT C9 Z11 Z12 Z13 L2 B2 C13 + C15 + C16 + C17 VDD Z14 Z15 Z16 C14 Z17 RF OUTPUT C8 C10 C11 C12 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.240″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.180″ x 0.270″ Microstrip 0.350″ x 0.270″ Microstrip 0.270″ x 0.520 x 0.140″ Taper 0.170″ x 0.520″ Microstrip 0.410″ x 0.520″ Microstrip 0.060″ x 0.520″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB 0.360″ x 0.270″ Microstrip 0.060″ x 0.270″ Microstrip 0.110″ x 0.060″ Microstrip 0.330″ x 0.060″ Microstrip 0.230″ x 0.060″ Microstrip 0.740″ x 0.060″ Microstrip 0.130″ x 0.060″ Microstrip 0.340″ x 0.060″ Microstrip Taconic RF−35−0300, 30 mil, εr = 3.55 Figure 1. 945 MHz Broadband Test Circuit Schematic Table 5. 945 MHz Broadband Test Circuit Component Designations and Values Part B1 B2 C1, C7, C13, C14 C2, C3, C11 C4, C5, C8, C9 C6, C15, C16 C10 C12 C17 L1, L2 N1, N2 WB1, WB2 Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors 0.8−8.0 Gigatrim Variable Capacitors 10 pF Chip Capacitors 10 mF, 35 V Tantalum Chip Capacitor 3.0 pF Chip Capacitor 0.5 pF Chip Capacitor (MRF9060) 0.7 pF Chip Capacitor (MRF9060S) 220 mF Electrolytic Chip Capacitor 12.5 nH Inductors N−Type Panel Mount, Stripline 10 mil Brass Wear Blocks Description 95F786 95F787 100B470JP 500X 44F3360 100B100JP 500X 93F2975 100B3R0JP 500X 100B0R5BP 500X 100B0R7BP 500X 14F185 A04T−5 3052−1648−10 Part Number Manufacturer Newark Newark ATC Newark ATC Newark ATC ATC ATC Newark Coilcraft Avnet MRF9060LR1 MRF9060LSR1 5−4 RF Device Data Freescale Semiconductor C6 VDD C7 B2 C13 L1 INPUT C1 C2 C3 C4 WB1 CUT OUT AREA C5 WB2 C8 C9 L2 C15 C16 C17 VGG B1 C14 C10 C11 C12 OUTPUT MRF9060 900 MHz Rev-02 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 930 − 960 MHz Broadband Test Circuit Component Layout MRF9060LR1 MRF9060LSR1 RF Device Data Freescale Semiconductor 5−5 TYPICAL CHARACTERISTICS h , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) -10 -12 -14 -16 -18 18 17 G ps , POWER GAIN (dB) 16 15 14 13 12 11 10 930 IRL IMD Gps h VDD = 26 Vdc Pout = 60 W (PEP) IDQ = 450 mA Two-Tone Measurement, 100 kHz Tone Spacing 50 45 40 35 -30 -32 -34 -36 935 940 945 950 f, FREQUENCY (MHz) 955 -38 960 Figure 3. Class AB Broadband Circuit Performance IDQ = 650 mA 500 mA IMD, INTERMODULATION DISTORTION (dBc) 18 17.5 G ps , POWER GAIN (dB) 17 16.5 16 -20 -25 -30 -35 -40 -45 -50 -55 -60 450 mA 650 mA 500 mA VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 100 IDQ = 275 mA 450 mA 275 mA 15.5 15 1 VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power 0 IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 -60 -70 0.1 5th Order 7th Order 100 3rd Order VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz IRL, INPUT RETURN LOSS (dB) 20 18 Gps, POWER GAIN (dB) 16 14 12 10 8 10 Pout, OUTPUT POWER (WATTS) AVG. VDD = 26 Vdc IDQ = 450 mA f = 945 MHz 100 h Gps 60 50 40 30 20 10 0 h, DRAIN EFFICIENCY (%) 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power MRF9060LR1 MRF9060LSR1 5−6 Figure 7. Power Gain and Efficiency versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Gps h, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 18 16 Gps, POWER GAIN (dB) 14 h 12 10 8 6 IMD 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz 60 40 20 0 -20 -40 -60 Figure 8. Power Gain, Efficiency, and IMD versus Output Power MRF9060LR1 MRF9060LSR1 RF Device Data Freescale Semiconductor 5−7 Zo = 5 Ω Zsource f = 930 MHz f = 960 MHz Zload f = 960 MHz f = 930 MHz VDD = 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz 930 945 960 Zsource Ω 0.80 − j0.10 0.80 − j0.05 0.81 − j0.10 Zload Ω 2.08 − j0.65 2.07 − j0.38 2.04 − j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF9060LR1 MRF9060LSR1 5−8 RF Device Data Freescale Semiconductor NOTES MRF9060LR1 MRF9060LSR1 RF Device Data Freescale Semiconductor 5−9 NOTES MRF9060LR1 MRF9060LSR1 5−10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X B G 1 Q aaa M TA M B M 3 (FLANGE) 2X NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF B 2 D bbb M T A 2X M K (LID) B M R ccc N ccc M M TA M B M (LID) TA C M B M H F E (INSULATOR) S T (INSULATOR) SEATING PLANE aaa TA M M TA M B M DIM A B C D E F G H K M N Q R S aaa bbb ccc M bbb M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A A CASE 360B−05 ISSUE F NI−360 MRF9060LR1 A B (FLANGE) A 1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. (LID) (FLANGE) B 2 2X D M 2X K M bbb TA M B R (LID) N ccc M M TA M B F M ccc E TA M B M H C PIN 3 bbb M (INSULATOR) S (INSULATOR) M T M SEATING PLANE M aaa M TA M B M DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.067 0.057 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.70 1.45 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF TA B CASE 360C−05 ISSUE D NI−360S MRF9060LSR1 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF9060LR1 MRF9060LSR1 RF Device Data Freescale Semiconductor 5−11 How to Reach Us: Home Page: www.freescale.com E−mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004. All rights reserved. MRF9060LR1 MRF9060LSR1 Document Number: MRF9060 Rev. 8, 12/2004 5−12 RF Device Data Freescale Semiconductor