MRF9060NR1

Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 13, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET NOT RECOMMENDED FOR NEW DESIGN • Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB Efficiency — 40% (Two Tones) IMD — - 31.5 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. 945 MHz, 60 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 1265 - 09, STYLE 1 TO - 270 - 2 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, + 15 223 1.79 - 65 to +150 200 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 0.56 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M2 (Minimum) C6 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C 1. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008-2009. All rights reserved. MRF9060NR1 1 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. MRF9060NR1 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS IDSS IGSS — — — — — — 10 1 1 μAdc Symbol Min Typ Max Unit NOT RECOMMENDED FOR NEW DESIGN Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) μAdc VGS(th) VGS(Q) VDS(on) gfs 2 3 — — 2.8 3.7 0.21 5.3 4 5 0.4 — Vdc Vdc Vdc S Ciss Coss Crss — — — 101 53 2.5 — — — pF pF pF Gps 17 18 — dB η 37 40 — % IMD — - 31.5 - 28 dBc IRL — - 14.5 -9 dB Gps — 18 — dB η — 40 — % IMD — - 31 — dBc IRL — - 12.5 — dB MRF9060NR1 2 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) μAdc VGG C6 RF INPUT B1 + C7 L1 C4 DUT Z11 Z1 C1 Z2 Z3 Z4 Z5 C2 Z6 Z7 Z8 C3 Z9 C5 Z10 C9 Z12 Z13 Z14 L2 B2 + C14 C15 + C16 + C17 RF OUTPUT Z15 Z16 Z17 Z18 C13 C8 C10 C11 C12 VDD NOT RECOMMENDED FOR NEW DESIGN Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.240″ 0.240″ 0.500″ 0.100″ 0.330″ 0.120″ 0.270″ 0.240″ 0.340″ x 0.060″ x 0.060″ x 0.100″ x 0.270″ x 0.270″ x 0.270″ x 0.520″ x 0.520″ x 0.520″ Microstrip Microstrip Microstrip x 0.080″, Taper Microstrip Microstrip x 0.140″, Taper Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 0.060″ 0.360″ 0.060″ 0.130″ 0.300″ 0.210″ 0.600″ 0.290″ 0.340″ x 0.520″ x 0.270″ x 0.270″ x 0.060″ x 0.060″ x 0.060″ x 0.060″ x 0.060″ x 0.060″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values Part B1 B2 C1, C7, C13, C14 C2, C3, C11 C4, C5 C6, C15, C16 C8, C9 C10 C12 C17 L1, L2 Board Material Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors 0.8 - 8.0 Gigatrim Variable Capacitors 11 pF Chip Capacitors (MRF9060NR1) 10 pF Chip Capacitors (MRF9060NBR1) 10 mF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors 3.9 pF Chip Capacitor 1.7 pF Chip Capacitor 220 mF Electrolytic Chip Capacitor 12.5 nH Inductors 30 mil Glass Teflon®, εr = 2.55 Copper Clad, 2 oz Cu Description Part Number 2743019447 2743029446 ATC100B470JT500XT 27291SL ATC100B110JT500XT ATC100B100JT500XT T491D106K035AT ATC100B100JT500XT ATC100B3R9CT500XT ATC100B1R7BT500XT MCAX63V227M13X22 A04T - 5 RF - 35 - 0300 Manufacturer Fair - Rite Fair - Rite ATC Johanson ATC Kemet Newark ATC ATC Multicomp Coilcraft Taconic MRF9060NR1 RF Device Data Freescale Semiconductor 3 NOT RECOMMENDED FOR NEW DESIGN C6 C17 VGG B1 B2 C7 VDD NOT RECOMMENDED FOR NEW DESIGN C15 C16 OUTPUT C10 C11 C12 C13 L1 INPUT C1 C2 C3 C4 WB1 CUT OUT AREA C5 WB2 C8 C9 L2 MRF9060M MRF9060MB Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout MRF9060NR1 4 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN C14 TYPICAL CHARACTERISTICS 19 18 G ps , POWER GAIN (dB) 17 16 15 14 13 IRL 12 11 930 935 940 945 950 955 Gps η VDD = 26 Vdc Pout = 60 W (PEP) IDQ = 450 mA Two−Tone, 100 kHz Tone Spacing IMD −32 −34 −36 960 50 45 40 35 IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) −28 −30 −10 −12 −14 −16 −18 η, DRAIN EFFICIENCY (%) NOT RECOMMENDED FOR NEW DESIGN f, FREQUENCY (MHz) Figure 3. Class AB Broadband Circuit Performance 19 IDQ = 625 mA 18.5 G ps , POWER GAIN (dB) 500 mA 18 450 mA −15 −20 −25 −30 −35 450 mA −40 −45 −50 −55 100 1 10 Pout, OUTPUT POWER (WATTS) PEP 500 mA 625 mA VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 100 IDQ = 275 mA 17.5 275 mA 17 VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 1 10 Pout, OUTPUT POWER (WATTS) PEP 16.5 Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power 20 60 Gps 50 40 30 20 η VDD = 26 Vdc IDQ = 450 mA f = 945 MHz 10 10 0 100 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) −10 −20 −30 −40 −50 −60 7th Order −70 −80 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 5th Order VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz 18 G ps , POWER GAIN (dB) 3rd Order 16 14 12 10 8 0.1 1 Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power MRF9060NR1 RF Device Data Freescale Semiconductor 5 NOT RECOMMENDED FOR NEW DESIGN IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%) 20 18 G ps , POWER GAIN (dB) Gps 60 40 20 0 VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz −20 IMD −40 −60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 NOT RECOMMENDED FOR NEW DESIGN 14 12 10 8 Figure 8. Power Gain, Efficiency, and IMD versus Output Power 1011 MTTF FACTOR (HOURS X AMPS2) 1010 109 108 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 9. MTTF Factor versus Junction Temperature MRF9060NR1 6 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN 16 η NOT RECOMMENDED FOR NEW DESIGN f = 930 MHz f = 960 MHz Zsource Zo = 2 Ω Zload f = 930 MHz f = 960 MHz VDD = 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz 930 945 960 Zsource Ω 0.63 + j0.57 0.60 + j0.41 0.57 + j0.45 Zload Ω 1.8 + j0.84 1.7 + j0.55 1.6 + j0.36 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance MRF9060NR1 RF Device Data Freescale Semiconductor 7 NOT RECOMMENDED FOR NEW DESIGN PACKAGE DIMENSIONS NOT RECOMMENDED FOR NEW DESIGN MRF9060NR1 8 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN RF Device Data Freescale Semiconductor MRF9060NR1 9 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN 10 MRF9060NR1 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. NOT RECOMMENDED FOR NEW DESIGN REVISION HISTORY The following table summarizes revisions to this document. Revision 12 Date Sept. 2008 Description • Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. • Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 8 - 10. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC Standard Package Number. • Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Added Product Documentation and Revision History, p. 11 13 June 2009 • Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516, p. 1 • Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software, p. 11 MRF9060NR1 RF Device Data Freescale Semiconductor 11 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008-2009. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF9060NR1 1Rev. 13, 6/2009 2 Document Number: MRF9060N RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN