MRF9080LSR3

Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large −signal, common − source amplifier applications in 26 volt base station equipment. • Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large−Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF9080LR3 MRF9080LSR3 GSM 900 MHz FREQUENCY BAND, 75 W, 26 V LATERAL N−CHANNEL RF POWER MOSFETs CASE 465−06, STYLE 1 NI−780 MRF9080LR3 CASE 465A−06, STYLE 1 NI−780S MRF9080LSR3 Table 1. Maximum Ratings Rating Drain−Source Voltage Gate−Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value − 0.5, +65 − 0.5, +15 250 1.43 − 65 to +150 200 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.7 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2004. All rights reserved. MRF9080LR3 MRF9080LSR3 5−1 Freescale Semiconductor Wireless RF Product Device Data Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vds, VGS = 0) Gate−Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) Drain−Source On−Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) Dynamic Characteristics (1) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) (2) Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Common−Source Amplifier Power Gain @ 70 W (Min) (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Drain Efficiency @ Pout = 70 W (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 921 and 960 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 600 mA, f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) P1dB Gps η1 η2 IRL Ψ 68 17 47 — 9.5 75 18.5 52 55 12.5 — 20 — — — W dB % % dB Coss Crss — — 73 2.9 — — pF pF VGS(th) VGS(Q) VDS(on) gfs 2.0 — — — — 3.7 0.19 8.0 4.0 — 0.4 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit No Degradation In Output Power Before and After Test 1. Part is internally input matched. 2. To meet application requirements, Freescale test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency MRF9080LR3 MRF9080LSR3 5−2 Freescale Semiconductor Wireless RF Product Device Data VGG R3 + C7 R2 C6 R1 C1 C2 C4 C8 C9 C10 C18 + VDD C17 C5 DUT C11 C12 C13 C15 C14 C16 RF OUTPUT RF INPUT C3 Figure 1. Broadband GSM 900 Test Circuit Schematic Table 5. Broadband GSM 900 Test Circuit Component Designations and Values Part C1 C2 C3 C4, C5, C9, C10, C12, C13 C6, C16, C17 C7, C18 C8, C11 C14 C15 R1, R2, R3 WB1, WB2 Raw PCB Material PCB Description 4.7 pF Chip Capacitor 2.7 pF Chip Capacitor 1.5 pF Chip Capacitor 5.6 pF Chip Capacitors 22 pF Chip Capacitors 10 µF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors 0.8 pF Chip Capacitor 8.2 pF Chip Capacitor 1.0 kΩ, 1/8 W Chip Resistors (0805) Beryllium Copper Wear Blocks 30 mil Glass Teflon®, εr = 2.55 Etched Circuit Board 0.004″ x 0.210″ x 0.520″ TLX8−0300 C−GY−00−001−02 Taconic Cibel Part Number 100B4R7BW 100B2R7BW 100B1R5BW 100B5R6CW 100B220GW 293D106X9035D2T 100B100JW 100B0R8BW 100B8R2GW Manufacturer ATC ATC ATC ATC ATC Sprague−Vishay ATC ATC ATC MRF9080LR3 MRF9080LSR3 Freescale Semiconductor Wireless RF Product Device Data 5−3 C7 C18 R3 R2 C6 C17 VGG VDD RF INPUT C1 C2 C3 R1 C5 WB1 C4 C11 C12 C13 WB2 C15 C16 C14 RF OUTPUT CUT OUT AREA C8 C9 C10 MRF9080 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. Broadband GSM 900 Test Circuit Component Layout MRF9080LR3 MRF9080LSR3 5−4 Freescale Semiconductor Wireless RF Product Device Data VGG + C6 U1 R1 C5 VDD + C9 R2 R3 P1 R4 T1 + C4 C3 C15 R5 R6 C7 DUT C10 C13 C14 RF OUTPUT RF INPUT C1 C2 C11 C8 C12 Figure 3. Broadband GSM 900 Optimized Demo Board Schematic Table 6. Broadband GSM 900 Optimized Demo Board Component Designations and Values Part C1 C2 C3, C15 C4, C6 C5 C7, C8 C9 C10, C11 C12, C13 C14 P1 R1 R2 R3 R4 R5, R6 T1 U1 Description 4.7 pF Chip Capacitor, ACCU−P (0805) 3.9 pF Chip Capacitor, ACCU−P (0805) 22 pF Chip Capacitors, ACCU−P (0805) 22 mF, 35 V Tantalum Chip Capacitors 1.0 mF Chip Capacitor, ACCU−P (0805) 5.6 pF Chip Capacitors, ACCU−P (0805) 220 mF, 63 V Electrolytic Capacitor 3.3 pF Chip Capacitors, ACCU−P (0805) 2.2 pF Chip Capacitors, ACCU−P (0805) 4.7 pF Chip Capacitor 5.0 kΩ Potentiometer CMS Cermet Multi−turn 10 Ω, 1/8 W Chip Resistor (0805) 1.0 kΩ, 1/8 W Chip Resistor (0805) 1.2 kΩ, 1/8 W Chip Resistor (0805) 2.2 kΩ, 1/8 W Chip Resistor (0805) 1.0 kΩ, 1/8 W Chip Resistors (0805) Bipolar NPN Transistor, SOT−23 Voltage Regulator, Micro−8 RF Connectors, Type SMA Substrate = Taconic RF35, Thickness 0.5 mm #BC847ALT1 #LP2951ACDM−5.0R2 #R125510001 ON Semiconductor ON Semiconductor Radial #08051J8R2CBT #08051J2R2CBT #100B #3224W AVX AVX ATC Bourns Part Number #08051J3R9CBT #08051J3R9CBT #08051J221 #T491X226K035AS4394 #08053G105ZATEA #08051J5R18CBT Manufacturer AVX AVX AVX Kemet AVX AVX MRF9080LR3 MRF9080LSR3 Freescale Semiconductor Wireless RF Product Device Data 5−5 VBIAS Ground VSUPPLY C5 R1 R2 R4 T1 R3 U1 P1 C6 C9 C15 C4 R5 C3 C1 C2 C11 C8 C12 C14 R6 C7 C10 C13 MRF9080 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. Broadband GSM 900 Optimized Demo Board Component Layout MRF9080LR3 MRF9080LSR3 5−6 Freescale Semiconductor Wireless RF Product Device Data TYPICAL CHARACTERISTICS (IN FREESCALE BROADBAND GSM 900 OPTIMIZED DEMO BOARD) 21 IDQ = 1000 mA G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 20 800 mA 600 mA 19 400 mA 18 VDD = 26 Vdc f = 940 MHz T = 25°C 1 10 Pout, OUTPUT POWER (WATTS) 100 26 Vdc 19 VDD = 22 Vdc 20 30 Vdc 18 IDQ = 600 mA f = 940 MHz T = 25°C 17 1 10 Pout, OUTPUT POWER (WATTS) 100 17 Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power 21 20 G ps , POWER GAIN (dB) 19 18 17 16 15 850 VDD = 26 Vdc IDQ = 600 mA T = 25°C 870 890 910 Gps Pout = 20 W 70 W IRL Pout = 20 W 0 -5 -10 -15 -20 -25 -30 930 950 970 990 1010 1030 1050 f, FREQUENCY (MHz) 120 110 IRL, INPUT RETURN LOSS (dB) P out , OUTPUT POWER (WATTS) 100 90 80 70 60 50 40 30 20 10 0 0 0.2 0.4 Pout VDD = 26 Vdc IDQ = 600 mA f = 940 MHz T = 25°C 1 1.2 0.6 0.8 1.4 Pin, INPUT POWER (WATTS) 1.6 h 60 50 40 30 20 10 0 1.8 h, DRAIN EFFICIENCY (%) 70 W Figure 7. Power Gain and Input Return Loss versus Frequency Figure 8. Output Power and Efficiency versus Input Power 20 25°C G ps , POWER GAIN (dB) 19 50°C 85°C 18 110 P out , OUTPUT POWER (WATTS) 100 90 80 70 60 50 40 30 20 10 100 0 0 0.2 0.4 0.6 0.8 1 1.2 Pout VDD = 26 Vdc IDQ = 600 mA f = 940 MHz 1.4 1.6 Pin, INPUT POWER (WATTS) h 25°C 85°C 25°C 85°C 55 50 45 40 35 30 25 20 15 10 5 0 1.8 h, DRAIN EFFICIENCY (%) 17 VDD = 26 Vdc IDQ = 600 mA f = 940 MHz 1 10 Pout, OUTPUT POWER (WATTS) 16 Figure 9. Power Gain versus Output Power Figure 10. Output Power and Efficiency versus Input Power MRF9080LR3 MRF9080LSR3 5−7 Freescale Semiconductor Wireless RF Product Device Data Zload f = 880 MHz f = 1000 MHz Zo = 10 Ω f = 880 MHz Zsource f = 1000 MHz VDD = 26 V, IDQ = 600 mA, Pout = 90 W CW f MHz 880 920 960 1000 Zsource Ω 0.91 − j2.11 0.88 − j2.65 1.6 − j2.61 2.45 − j3.38 Zload Ω 1.22 − j0.12 1.00 − j0.16 1.22 − j0.22 1.14 − j0.41 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance MRF9080LR3 MRF9080LSR3 5−8 Freescale Semiconductor Wireless RF Product Device Data NOTES MRF9080LR3 MRF9080LSR3 Freescale Semiconductor Wireless RF Product Device Data 5−9 NOTES MRF9080LR3 MRF9080LSR3 5−10 Freescale Semiconductor Wireless RF Product Device Data PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA TA B B M ccc aaa M TA TA M B B M S M M M M M (INSULATOR) M ccc C F E A (FLANGE) A T SEATING PLANE CASE 465−06 ISSUE F NI−780 MRF9080LR3 4X U (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE B 1 4X Z (LID) (FLANGE) B 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --0.040 --0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --1.02 --0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A CASE 465A−06 ISSUE F NI−780S MRF9080LSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF9080LR3 MRF9080LSR3 Freescale Semiconductor Wireless RF Product Device Data 5−11 How to Reach Us: Home Page: www.freescale.com E−mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1−800−521−6274 or +1−480−768−2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1−8−1, Shimo−Meguro, Meguro−ku, Tokyo 153−0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1−800−441−2447 or 303−675−2140 Fax: 303−675−2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004. All rights reserved. MRF9080LR3 MRF9080LSR3 Document Number: MRF9080 Rev. 5, 12/2004 5−12 Freescale Semiconductor Wireless RF Product Device Data