MRF9085LR3_06

Freescale Semiconductor Technical Data Document Number: MRF9085 Rev. 11, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 20 Watts Power Gain — 17.9 dB Efficiency — 28% Adjacent Channel Power — 750 kHz: - 45.0 dBc @ 30 kHz BW 1.98 MHz: - 60.0 dBc @ 30 kHz BW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF9085LR3 MRF9085LSR3 880 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs ARCHIVE INFORMATION CASE 465 - 06, STYLE 1 NI - 780 MRF9085LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF9085LSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 250 1.43 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.7 Unit °C/W © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. MRF9085LR3 MRF9085LSR3 4-1 Freescale Semiconductor RF Product Device Data ARCHIVE INFORMATION Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model MRF9085LR3 MRF9085LSR3 Class 1 (Minimum) M2 (Minimum) M1 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit ARCHIVE INFORMATION On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) Dynamic Characteristics (1) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) 1. Part is internally input matched. Coss Crss — — 73 2.9 — — pF pF (continued) VGS(th) VGS(Q) VDS(on) gfs 2.0 — — — — 3.7 0.19 8.0 4.0 — 0.4 — Vdc Vdc Vdc S MRF9085LR3 MRF9085LSR3 4-2 Freescale Semiconductor RF Product Device Data ARCHIVE INFORMATION Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Power Output, 1 dB Compression Point, CW (VDD = 26 Vdc, IDQ = 700 mA, f1 = 880.0 MHz) Common- Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f1 = 880.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f1 = 880.0 MHz) Power Output, 1 dB Compression Point, CW (1) (VDD = 26 Vdc, IDQ = 700 mA, f1 = 960 MHz) Gps 17 17.9 — dB Symbol Min Typ Max Unit η 36 40 — % IMD — - 31 - 28 dBc IRL — - 21 -9 dB ARCHIVE INFORMATION Gps — 17.9 — dB η — 40.0 — % IMD — - 31 — dBc IRL — - 16 — dB P1dB — 105 — W Gps — 17.5 — dB η — 51 — % P1dB — 105 — W 1. These values are derived from a 960 MHz optimized test fixture. Values are not applicable to Figures 1 and 2. MRF9085LR3 MRF9085LSR3 Freescale Semiconductor RF Product Device Data 4-3 ARCHIVE INFORMATION VGG + + C7 B1 B2 B3 + + C18 + C19 VDD + C17 C8 C9 L1 L2 C16 C11 RF INPUT C6 Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C10 C4 C3 C5 DUT C12 C13 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 C15 C14 Z20 RF OUTPUT ARCHIVE INFORMATION B1, B2, B3 C1, C9, C15, C16 C3 C4, C13 C5, C6, C12 C7, C17, C18, C19 C8 C10, C11 C14 L1 L2 N1, N2 WB1, WB2 Z1 Z2 Z3 Z4 Z5 Short Ferrite Beads, Surface Mount 47 pF Chip Capacitors, ATC 5.6 pF Chip Capacitor, ATC 0.8 - 8.0 Variable Capacitors, Gigatrim 8.2 pF Chip Capacitors, ATC 10 mF, 35 V Tantalum Surface Mount Capacitors, Kemet 20 K pF Chip Capacitor, ATC 16 pF Chip Capacitors, ATC 0.6 - 4.5 Variable Capacitor, Gigatrim 7.15 nH Inductor, Coilcraft 17.5 nH Inductor, Coilcraft N - Type Panel Mount, Stripline, M/A - Com 5 Mil BeCu Shim (0.225 x 0.525) 0.219″ x 0.080″ Microstrip 0.150″ x 0.080″ Microstrip 0.851″ x 0.080″ Microstrip 0.125″ x 0.220″ Microstrip 0.123″ x 0.220″ Microstrip Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 PCB 0.076″ x 0.220″ Microstrip 0.261″ x 0.220″ Microstrip 0.220″ x 0.630″ x 0.200″ Taper 0.240″ x 0.630″ Microstrip 0.060″ x 0.630″ Microstrip 0.067″ x 0.630″ Microstrip 0.233″ x 0.630″ Microstrip 0.630″ x 0.220″ x 0.200″ Taper 0.200″ x 0.220″ Microstrip 0.055″ x 0.220″ Microstrip 0.088″ x 0.220″ Microstrip 0.226″ x 0.220″ Microstrip 0.868″ x 0.080″ Microstrip 0.129″ x 0.080″ Microstrip 0.223″ x 0.080″ Microstrip Arlon GX - 0300- 55- 22, 30 mils εr = 2.55 Figure 1. 865 - 895 MHz Broadband Test Circuit Schematic MRF9085LR3 MRF9085LSR3 4-4 Freescale Semiconductor RF Product Device Data ARCHIVE INFORMATION C7 VGG B1 C8 B2 C6 C11 B3 C17 V DD C19 C16 C18 L2 C15 C1 C9 WB1 L1 C3 C4 C5 WB2 C12 C14 CUTOUT C10 C13 ARCHIVE INFORMATION MRF9085 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 865 - 895 MHz Broadband Test Circuit Component Layout MRF9085LR3 MRF9085LSR3 Freescale Semiconductor RF Product Device Data 4-5 ARCHIVE INFORMATION TYPICAL CHARACTERISTICS h , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 2.00 1.75 1.50 1.25 1.00 VSWR 19 18 G ps , POWER GAIN (dB) 17 16 15 14 13 12 11 860 865 870 IMD Gps h VDD = 26 Vdc Pout = 90 W (PEP) IDQ = 700 mA Two−Tone, 100 kHz Tone Spacing 50 45 40 35 −28 −30 −32 −34 875 880 885 f, FREQUENCY (MHz) 890 895 900 −36 VSWR ARCHIVE INFORMATION Figure 3. Class AB Broadband Circuit Performance h , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 19 Gps 17 G ps , POWER GAIN (dB) 15 h 13 11 9 7 VDD = 26 Vdc IDQ = 700 mA f1 = 880.0 MHz f2 = 880.1 MHz IMD 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 60 40 20 0 −20 −40 −60 −10 −20 −30 −40 VDD = 26 Vdc IDQ = 700 mA f1 = 800.0 MHz f2 = 800.1 MHz 3rd Order 5th Order 7th Order −50 −60 −70 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain, Efficiency, IMD versus Output Power Figure 5. Intermodulation Distortion Products versus Output Power 18 17 Gps, POWER GAIN (dB) 16 15 14 13 12 Gps 60 50 h, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 40 30 VDD = 26 Vdc IDQ = 700 mA f = 880 MHz Single Tone 20 10 0 19 17 15 13 11 Gps h VDD = 26 Vdc IDQ = 700 mA f = 880 MHz 40 h, DRAIN EFFICIENCY (%) & ACPR (dB) 20 0 −20 −40 750 kHz 9 7 −60 1.98 MHz −80 1 10 Pout, OUTPUT POWER (WATTS) AVG. h 1 10 100 Pout, OUTPUT POWER (WATTS) CW AVG. Figure 6. Power Gain, Efficiency versus Output Power MRF9085LR3 MRF9085LSR3 4-6 Figure 7. Power Gain, Efficiency, ACPR versus Output Power Freescale Semiconductor RF Product Device Data ARCHIVE INFORMATION Zload f = 865 MHz f = 895 MHz Zo = 2 Ω Zsource f = 895 MHz ARCHIVE INFORMATION f = 865 MHz VDD = 26 V, IDQ = 700 mA, Pout = 90 W PEP f MHz 865 880 895 Zsource Ω 1.35 - j1.92 1.33 - j1.66 1.28 - j1.30 Zload Ω 1.26 - j0.15 1.26 - j0.10 1.21 - j0.20 Zsource = Test circuit impedance as measured from gate to ground. Zload Note: = Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 8. Series Equivalent Source and Load Impedance MRF9085LR3 MRF9085LSR3 Freescale Semiconductor RF Product Device Data 4-7 ARCHIVE INFORMATION NOTES ARCHIVE INFORMATION MRF9085LR3 MRF9085LSR3 4-8 Freescale Semiconductor RF Product Device Data ARCHIVE INFORMATION NOTES ARCHIVE INFORMATION MRF9085LR3 MRF9085LSR3 Freescale Semiconductor RF Product Device Data 4-9 ARCHIVE INFORMATION NOTES ARCHIVE INFORMATION MRF9085LR3 MRF9085LSR3 4 - 10 Freescale Semiconductor RF Product Device Data ARCHIVE INFORMATION PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N (LID) M TA B M ccc M TA M B M S M (INSULATOR) ARCHIVE INFORMATION H C F E A (FLANGE) A T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE G NI - 780 MRF9085LR3 4X U (FLANGE) B 1 4X Z (LID) (FLANGE) B 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A CASE 465A - 06 ISSUE H NI - 780S MRF9085LSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF9085LR3 MRF9085LSR3 Freescale Semiconductor RF Product Device Data 4 - 11 ARCHIVE INFORMATION ccc TA M B M aaa M TA M B M ARCHIVE INFORMATION Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. MRF9085LR3 MRF9085LSR3 Rev. 11, 4 - 12 5/2006 Document Number: MRF9085 Freescale Semiconductor RF Product Device Data ARCHIVE INFORMATION How to Reach Us: