MRF9582NT1

Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 1, 7/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Typical CW RF Performance @ 849 MHz: VDD = 12.5 Volts, IDQ = 300 mA, Pout = 38 dBm Power Gain — 10.5 dB Drain Efficiency — 55% • Capable of Handling 10:1 VSWR, @ 12.5 Vdc, 849 MHz, 38 dBm • RoHS Compliant • In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel MRF9582NT1 849 MHz, 38 dBm, 12.5 V HIGH FREQUENCY POWER TRANSISTOR LDMOS FET 3 2 1 4 CASE 449 - 02, STYLE 1 PLD - 1 Table 1. Maximum Ratings Rating Drain - Source Voltage Drain - Gate Voltage (RGS = 1.0 MΩ) Gate - Source Voltage Drain Current - Continuous Total Device Dissipation @ TC = 85°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 17 17 4.0 1.5 10.5 - 65 to 150 150 Unit Vdc Vdc Vdc Adc W °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction - to - Case Symbol RθJC Rating 1 Value 6 Unit °C/W Unit °C Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Package Peak Temperature 260 NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF9582NT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C, unless otherwise noted) Characteristic Off Characteristics Drain - Source Breakdown Voltage (VGS = 0, ID = 100 nAdc) Drain - Source Leakage Current (VDS = 12.5 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0) On Characteristics Gate Threshold Voltage Resistance Drain - Source (VGS = 5 Vdc, ID = 300 mA) Dynamic Characteristics Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Feedback Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Typical Characteristics Power Gain (VDD = 12.5 Vdc, Pin = 27.5 dBm, f = 849 MHz) Drain Efficiency (VDD = 12.5 Vdc, Pin = 27.5 dBm, f = 849 MHz) Output Power Gps ηD Pout — — — 10.5 55 38 — — — dB % dBm Ciss Coss Crss — — — 30.77 15.6 0.82 — — — pF pF pF VGS RDS(on) — 0.05 2.4 0.5 — 0.8 Vdc Ω V(BR)DSS IDSS IGSS — — — 45 — — — 100 100 Vdc nAdc nAdc Symbol Min Typ Max Unit MRF9582NT1 2 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 40 39.5 OUTPUT POWER (dBm) 13.75 V 39 38.5 38 37.5 37 820 11.25 V Pin = 27.5 dBm TA = 25°C Vg = 2.4 V 830 835 840 845 850 855 f, FREQUENCY (MHz) 12.50 V EFFICIENCY (%) 70 68 66 64 62 60 820 Pin = 27.5 dBm TA = 25°C Vg = 2.4 V 13.75 V 12.50 V 11.25 V 825 825 830 835 840 845 850 855 f, FREQUENCY (MHz) Figure 1. Output Power versus Frequency Figure 2. Efficiency versus Frequency 39 IDQ, QUIESCENT CURRENT (mA) −35°C 25°C 400 350 300 250 200 150 100 820 −35°C 825 830 835 840 845 850 855 25°C 85°C OUTPUT POWER (dBm) 38.8 38.6 38.4 38.2 38 820 85°C Pin = 27.5 dBm VDD = 12.5 V Vg = 2.4 V 825 830 835 840 845 850 855 Pin = 27.5 dBm VDD = 12.5 V Vg = 2.4 V f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 3. Output Power versus Frequency Figure 4. Quiescent Current versus Frequency MRF9582NT1 RF Device Data Freescale Semiconductor 3 f = 849 MHz Zsource Zo = 5 Ω Zload f = 849 MHz VDD = 12.5 Vdc, IDQ = 300 mA, Pout = 38 dBm f MHz 849 Zsource = Zload = Zsource Ω 2.5 + j0.5 Zload Ω 2.5 - j2.5 Test circuit impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 5. Series Equivalent Source and Load Impedance MRF9582NT1 4 RF Device Data Freescale Semiconductor NOTES MRF9582NT1 RF Device Data Freescale Semiconductor 5 NOTES MRF9582NT1 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L S A 1 C E P H T G W 8 PL ZONE U ZONE V RB 4 3 N F 2 PL 2 K D 2 PL Q DRAFT 4 PL M Y X RF Device Data Freescale Semiconductor ÉÉ ÉÉ J 8 PL Z AA RESIN BLEED/FLASH ALLOWABLE DIM A B C D E F G H J K L M N P Q R S T U V W X Y Z AA INCHES MIN MAX 0.185 0.195 0.175 0.185 0.058 0.064 0.017 0.023 0.014 0.017 0.027 0.033 0.071 0.077 0.017 0.023 0.000 0.007 0.018 0.026 0.253 0.263 5 _REF 1.75 REF 0.000 0.006 0.120 0.130 0.220 0.230 0.030 0.038 0.050 0.060 0.000 0.018 0.000 0.014 0.004 0.016 0.131 0.141 0.065 0.075 0.089 0.099 0.056 0.066 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 4.70 4.95 4.44 4.70 1.47 1.63 0.43 0.58 0.36 0.43 0.69 0.84 1.80 1.96 0.43 0.58 0.00 0.18 0.46 0.66 6.43 6.68 5 _REF 4.44 REF 0.00 0.15 3.05 3.30 5.59 5.84 0.76 0.97 1.27 1.52 0.00 0.46 0.00 0.36 0.10 0.41 3.33 3.58 1.65 1.90 2.26 2.51 1.42 1.67 CASE 449 - 02 ISSUE A ÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ É É DRAIN GATE SOURCE SOURCE MRF9582NT1 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF9582NT1 8Rev. 1, 7/2006 Document Number: MRF9582NT1 RF Device Data Freescale Semiconductor