MRFE6P3300HR5

Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 volt analog or digital television transmitter equipment. • Typical Narrowband Two - Tone Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP Power Gain — 20.4 dB Drain Efficiency — 44.8% IMD — - 28.8 dBc • Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Designed for Push - Pull Operation Only • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. MRFE6P3300HR3 MRFE6P3300HR5 860 MHz, 300 W, 32 V LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 1 NI - 860C3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +66 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 300 W CW Case Temperature 82°C, 220 W CW Case Temperature 79°C, 100 W CW Case Temperature 81°C, 60 W CW Symbol RθJC Value (2,3) 0.23 0.24 0.27 0.27 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. MRFE6P3300HR3 MRFE6P3300HR5 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 3B (Minimum) C (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics (1) Symbol IDSS IDSS IGSS Min — — — Typ — — — Max 10 1 1 Unit μAdc μAdc μAdc Zero Gate Voltage Drain Leakage Current (4) (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (4) (VDS = 32 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 350 μAdc) Gate Quiescent Voltage (3) (VDD = 32 Vdc, ID = 1600 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.4 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (4) (VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (4) (VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (1) (VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) VGS(th) VGS(Q) VDS(on) 1 2 — 2.2 2.8 0.22 3 4 0.3 Vdc Vdc Vdc Crss Coss Ciss — — — 1.22 217 106 — — — pF pF pF Functional Tests (3) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP, f1 = 857 MHz, f2 = 863 MHz Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss 1. 2. 3. 4. Each side of the device measured separately. Part internally matched both on input and output. Measurement made with device in push - pull configuration. Drains are tied together internally as this is a total device value. Gps ηD IMD IRL 19 41 — — 20.4 44.8 - 28.8 - 18.4 23 — - 27 -9 dB % dBc dB MRFE6P3300HR3 MRFE6P3300HR5 2 RF Device Data Freescale Semiconductor R1 VBIAS B1 + R3 COAX1 Z4 Z2 RF INPUT Z1 C4 Z3 C5 R2 COAX2 VBIAS + C9 C7 C8 C24 + C19 C20 + C22 C21 B2 Z5 C13 Z20 Z11 COAX4 VSUPPLY C6 Z7 DUT C10 C11 C12 Z6 Z8 C1 C2 C3 Z19 Z10 Z12 Z14 Z16 C14 RF Z18 OUTPUT C23 + C15 C16 + C18 C17 VSUPPLY COAX3 Z9 Z13 Z15 Z17 Z1, Z18 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 0.401″ 0.563″ 1.013″ 0.416″ 0.191″ 1.054″ x 0.081″ x 0.101″ x 0.058″ x 0.727″ x 0.507″ x 0.150″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z12, Z13 Z14, Z15 Z16, Z17 Z19, Z20 PCB 0.225″ x 0.507″ Microstrip 0.440″ x 0.435″ Microstrip 0.123″ x 0.215″ Microstrip 0.165″ x 0.339″ Microstrip Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.5 Figure 1. 820 - 900 MHz Narrowband Test Circuit Schematic Table 5. 820 - 900 MHz Narrowband Test Circuit Component Designations and Values Part B1, B2 C1, C9 C2, C7, C17, C21 C3, C8, C16, C20 C4, C5, C13, C14 C6, C12 C10 C11 C15, C19 C18, C22 C23, C24 Coax1, 2, 3, 4 R1, R2 R3 Description Ferrite Beads, Short 1.0 μF, 50 V Tantulum Chip Capacitors 0.1 μF, 50 V Chip Capacitors 1000 pF Chip Capacitors 100 pF Chip Capacitors 8.2 pF Chip Capacitors 9.1 pF Chip Capacitor 1.8 pF Chip Capacitor 47 μF, 50 V Electrolytic Capacitors 470 μF, 63 V Electrolytic Capacitors 22 pF Chip Capacitors 50 Ω, Semi Rigid Coax, 2.06″ Long 10 Ω, 1/4 W Chip Resistors 1 kΩ, 1/4 W Chip Resistor Part Number 2743019447 T491C105K050AT CDR33BX104AKYS ATC100B102JT50XT ATC100B101JT500XT ATC100B8R2JT500XT ATC100B9R1BT500XT ATC100B1R8BT500XT EMVY500ADA470MF80G ESME630ELL471MK255 ATC100B220FT500XT UT - 141A - TP CRCW120610R0FKTA CRCW12061001FKTA Kemet Kemet ATC ATC ATC ATC ATC Nippon United Chemi - Con ATC Micro - Coax Vishay Vishay Manufacturer Fair - Rite MRFE6P3300HR3 MRFE6P3300HR5 RF Device Data Freescale Semiconductor 3 C1 C23 VGG R3 C2 C3 R1 B1 C15 C18 VDD C16 C17 COAX1 COAX3 MRF6P9220, Rev. 2 C4 CUT OUT AREA C14 C12 C5 C6 C10 C11 C13 COAX2 COAX4 R2 VGG C7 C8 B2 C24 C20 VDD C21 C22 C9 C19 Figure 2. 820 - 900 MHz Narrowband Test Circuit Component Layout MRFE6P3300HR3 MRFE6P3300HR5 4 RF Device Data Freescale Semiconductor TYPICAL NARROWBAND CHARACTERISTICS 21 20.5 Gps, POWER GAIN (dB) 20 19.5 19 18.5 18 17.5 ACP −L ACP −U 840 850 IRL 860 870 880 890 −65 900 −20 VDD = 32 Vdc, Pout = 60 W (Avg.) IDQ = 1600 mA, 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols Gps 25 −45 ACPR (dBc) −50 −55 −60 ηD, DRAIN EFFICIENCY (%) 0 −5 −10 −15 ηD, DRAIN EFFICIENCY (%) 0 ACPR (dBc) −5 −10 −15 −20 IDQ = 800 mA 1200 mA IRL, INPUT RETURN LOSS (dB) 2400 mA 2000 mA 1600 mA −60 1 10 100 600 1 10 100 600 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP ηD 31 29 27 17 820 830 f, FREQUENCY (MHz) Figure 3. Single - Carrier OFDM Broadband Performance @ 60 Watts Avg. 20.5 20 19.5 Gps, POWER GAIN (dB) 19 18.5 18 17.5 17 16.5 820 830 840 850 860 870 880 890 f, FREQUENCY (MHz) IRL Gps VDD = 32 Vdc, Pout = 120 W (Avg.) IDQ = 1600 mA, 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols ACP −U ACP −L ηD 44 42 40 38 −40 −45 −50 −55 −60 900 Figure 4. Single - Carrier OFDM Broadband Performance @ 120 Watts Avg. 21 IDQ = 2400 mA 20 Gps, POWER GAIN (dB) 2000 mA 19 1600 mA 1200 mA 18 800 mA 17 VDD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz Two −Tone Measurements, 6 MHz Tone Spacing 16 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −10 VDD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz Two −Tone Measurements, 6 MHz Tone Spacing −20 −30 −40 −50 Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRFE6P3300HR3 MRFE6P3300HR5 RF Device Data Freescale Semiconductor 5 IRL, INPUT RETURN LOSS (dB) TYPICAL NARROWBAND CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) VDD = 32 Vdc, IDQ = 1600 mA f1 = 857 MHz, f2 = 863 MHz Two −Tone Measurements, 6 MHz Tone Spacing IMD, INTERMODULATION DISTORTION (dBc) −10 −20 −30 −40 5th Order −50 −60 −70 1 7th Order 10 100 600 3rd Order −10 −20 −30 −40 −50 −60 −70 1 10 TWO −TONE SPACING (MHz) 80 VDD = 32 Vdc, Pout = 150 W (PEP), IDQ = 1600 mA Two −Tone Measurements (f1 + f2)/2 = Center Frequency of 860 MHz IM3 −L IM3 −U IM5 −U IM5 −L IM7 −U IM7 −L Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion Products versus Output Power 63 62 Pout, OUTPUT POWER (dBm) 61 60 59 58 57 56 55 54 53 32 33 34 35 P1dB = 55.15 dBm (327.9 W) P3dB = 55.9 dBm (388.37 W) Figure 8. Intermodulation Distortion Products versus Tone Spacing P6dB = 56.28 dBm (424.38 W) Ideal Actual VDD = 32 Vdc, IDQ = 1600 mA Pulsed CW, 12 μsec(on), 1% Duty Cycle f = 860 MHz 36 37 38 39 40 41 42 Pin, INPUT POWER (dBm) Figure 9. Pulsed CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 45 40 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 200 ACP −L ACP −U 85_C −30_C TC = − 30_C 25_C Gps VDD = 32 Vdc, IDQ = 1600 mA, f = 860 MHz 8K Mode OFDM, 64 QAM Data Carrier Modulation, 5 Symbols ηD −25 25_C 85_C 25_C −30 −35 −40 −45 −50 −55 −60 −65 −70 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) −30_C 85_C Figure 10. Single - Carrier DVBT OFDM ACPR, Power Gain and Drain Efficiency versus Output Power MRFE6P3300HR3 MRFE6P3300HR5 6 RF Device Data Freescale Semiconductor TYPICAL NARROWBAND CHARACTERISTICS 22 21 Gps, POWER GAIN (dB) 20 19 18 17 16 15 1 10 100 Pout, OUTPUT POWER (WATTS) CW ηD TC = − 30_C 25_C 85_C Gps 25_C 85_C −30_C 70 60 Gps, POWER GAIN (dB) 50 40 30 20 VDD = 32 Vdc IDQ = 1600 mA f = 860 MHz 10 0 800 16 0 50 100 150 200 250 300 350 400 Pout, OUTPUT POWER (WATTS) CW ηD, DRAIN EFFICIENCY (%) 20 21 19 18 17 IDQ = 1600 mA f = 860 MHz VDD = 28 V 32 V 30 V Figure 11. Power Gain and Drain Efficiency versus CW Output Power 107 Figure 12. Power Gain versus Output Power MTTF (HOURS) 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 32 Vdc, Pout = 270 W PEP, and ηD = 44.8%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu− lators by product. Figure 13. MTTF versus Junction Temperature MRFE6P3300HR3 MRFE6P3300HR5 RF Device Data Freescale Semiconductor 7 DIGITAL TEST SIGNALS 100 −20 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 12 PEAK −TO−AVERAGE (dB) −30 −40 −50 −60 8K Mode DVTB OFDM 64 QAM Data Carrier Modulation 5 Symbols −70 −80 −90 −100 −110 −5 −4 −3 −2 −1 0 1 2 3 4 5 f, FREQUENCY (MHz) 20 kHz BW 20 kHz BW ACPR Measured at 3.9 MHz Offset from Center Frequency 7.61 MHz Figure 14. Single - Carrier DVTB OFDM Figure 15. 8K Mode DVBT OFDM Spectrum MRFE6P3300HR3 MRFE6P3300HR5 8 RF Device Data Freescale Semiconductor f = 890 MHz Zload f = 830 MHz Z o = 10 Ω f = 890 MHz Zsource f = 830 MHz VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP f MHz 830 845 860 875 890 Zsource Ω 4.52 - j6.73 4.22 - j6.38 3.89 - j5.81 3.54 - j5.10 3.39 - j4.32 Zload Ω 4.89 - j1.35 5.06 - j1.01 5.18 - j0.58 5.27 - j0.11 5.36 + j0.43 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − Output Matching Network − Z source Z + load Figure 16. 820 - 900 MHz Narrowband Series Equivalent Source and Load Impedance MRFE6P3300HR3 MRFE6P3300HR5 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS G L ccc R M 4 2X TA M B M J 1 2 Q bbb M TA M B M (LID) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF B 5 4X (FLANGE) K 4X 3 4 S (INSULATOR) M D bbb M B TA M bbb TA M B M B M ccc M TA (LID) M B M N F E H bbb A (INSULATOR) M M C B M T TA A M SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. CASE 375G - 04 ISSUE G NI - 860C3 MRFE6P3300HR3 MRFE6P3300HR5 10 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date May 2007 • Initial Release of Data Sheet Description MRFE6P3300HR3 MRFE6P3300HR5 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRFE6P3300HR3 MRFE6P3300HR5 1Rev. 0, 5/2007 2 Document Number: MRFE6P3300H RF Device Data Freescale Semiconductor