MRFE6S9046NR1

Freescale Semiconductor Technical Data Document Number: MRFE6S9046N Rev. 0, 5/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier applications. • Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout = 35.5 Watts CW, f = 960 MHz Power Gain — 19 dB Drain Efficiency — 57% • Capable of Handling 5:1 VSWR, @ 32 Vdc, 940 MHz, 70 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ] 45 Watts CW • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 285 mA, Pout = 17.8 Watts Avg., Full Frequency Band (920 - 960 MHz) Power Gain — 19 dB Drain Efficiency — 42.5% Spectral Regrowth @ 400 kHz Offset = - 62.5 dBc Spectral Regrowth @ 600 kHz Offset = - 72 dBc EVM — 2.1% rms Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRFE6S9046NR1 MRFE6S9046GNR1 920 - 960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRFE6S9046NR1 CASE 1487 - 05, STYLE 1 TO - 270 WB - 4 GULL PLASTIC MRFE6S9046GNR1 PARTS ARE SINGLE - ENDED RFin/VGS 3 2 RFout/VDS RFin/VGS 4 1 RFout/VDS (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +66 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2009. All rights reserved. MRFE6S9046NR1 MRFE6S9046GNR1 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 45 W CW, 28 Vdc, IDQ = 300 mA Case Temperature 80°C, 18 W CW, 28 Vdc, IDQ = 300 mA Symbol RθJC Value (1,2) 1.3 1.8 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 300 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics (3) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss — — — 0.6 318 120 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 1 2 0.1 2.2 3.1 0.3 3 4 0.4 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 35.5 W CW, IDQ = 300 mA, f = 960 MHz Characteristic Symbol Min Typ Max Power Gain Drain Efficiency Input Return Loss Gps ηD IRL 17.5 54 — 19 57 - 13 — — -7 Unit dB % dB 1. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. 3. Part internally matched both on input and output. 4. Measurement made with device in straight lead configuration before any lead forming operation is applied. (continued) MRFE6S9046NR1 MRFE6S9046GNR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 300 mA, 920-960 MHz Bandwidth Pout @ 1 dB Compression Point IMD Symmetry @ 44 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 35.5 W CW Average Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 45 W CW Average Group Delay @ Pout = 45 W CW, f = 940 MHz Part - to - Part Insertion Phase Variation @ Pout = 45 W CW, f = 940 MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) P1dB IMDsym — — 45 55 — — W MHz VBWres GF Φ Delay ΔΦ ΔG ΔP1dB — — — — — — — 65 0.2 0.9 3.1 20 0.021 0.006 — — — — — — — MHz dB ° ns ° dB/°C dBm/°C Typical GSM EDGE Performances (In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 285 mA, Pout = 17.8 W Avg., 920 - 960 MHz EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps ηD EVM SR1 SR2 — — — — — 19 42.5 2.1 - 62.5 - 72 — — — — — dB % % rms dBc dBc MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 3 R1 VBIAS Z7 + C10 C5 Z9 Z6 C11 C12 VSUPPLY RF INPUT Z10 Z1 C1 C2 Z2 Z3 C4 Z4 Z5 Z11 Z12 C6 Z13 Z14 C9 Z15 RF OUTPUT Z8 C3 DUT C13 C14 C7 C8 Z1 Z2 Z3 Z4 Z5 Z6* Z7 Z8* Z9* 0.200″ 0.196″ 0.380″ 0.321″ 0.039″ 0.281″ 0.892″ 0.751″ x 0.044″ x 0.044″ x 0.044″ x 0.450″ x 0.450″ x 0.040″ x 0.051″ x 0.040″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.040″ x 0.450″ Microstrip 0.321″ x 0.450″ Microstrip 0.080″ x 0.280″ Microstrip 0.372″ x 0.044″ Microstrip 0.124″ x 0.044″ Microstrip 0.200″ x 0.044″ Microstrip Rogers R04350, 0.020″, εr = 3.66 * Line length includes microstrip bends Figure 2. MRFE6S9046NR1(GNR1) Test Circuit Schematic — GSM EDGE Reference Design Table 6. MRFE6S9046NR1(GNR1) Test Circuit Component Designations and Values — GSM EDGE Reference Design Part C1, C9 C2 C3, C4 C5, C11, C14 C6, C7 C8 C10, C13 C12 R1 Description 56 pF Chip Capacitors 2.4 pF Chip Capacitor 6.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 3.3 pF Chip Capacitors 4.7 pF Chip Capacitor 39 pF Chip Capacitors 470 μF, 63 V Electrolytic Capacitor 4.7 KΩ, 1/4 W Chip Resistor Part Number ATC600F560BT500XT ATC600F2R4BT500XT ATC600F6R8BT500XT GRM55DR61H106KA88B ATC600F3R3BT500XT ATC600F4R7BT500XT ATC600F390BT500XT MCGPR63V477M13X26 - RH CRCW12064701FKEA Manufacturer ATC ATC ATC Murata ATC ATC ATC Multicomp Vishay MRFE6S9046NR1 MRFE6S9046GNR1 4 RF Device Data Freescale Semiconductor VGS C10 C5 R1 C12 C11 C1 C2 CUT OUT AREA C4 C6 C8 C9 C7 C3 TO270−WB 2 GHz Rev. 3 − Output C13 C14 VDS TO270−WB 2 GHz Rev. 3 − Input Figure 3. MRFE6S9046NR1(GNR1) Test Circuit Component Layout — GSM EDGE Reference Design MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 19.6 19.5 19.4 Gps, POWER GAIN (dB) 19.3 19.2 19.1 19 18.9 18.8 18.7 18.6 920 925 930 935 940 945 950 955 IRL VDD = 28 Vdc, Pout = 35.5 W CW, IDQ = 300 mA Gps ηD 58 57 ηD, DRAIN EFFICIENCY (%) 56 55 54 53 52 51 50 49 48 960 −16 −19 −22 −25 −28 −31 f, FREQUENCY (MHz) Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 35.5 Watts CW 19.5 19.4 19.3 Gps, POWER GAIN (dB) 19.2 19.1 19 18.9 18.8 18.7 18.6 18.5 920 925 EVM IRL VDD = 28 Vdc, Pout = 17.8 W (Avg.) IDQ = 285 mA, EDGE Modulation Gps 42 41 40 39 38 6 5 4 3 2 935 940 945 950 955 1 960 ηD, DRAIN EFFICIENCY (%) ηD IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) IM3−U IM3−L IM5−L 10 EVM, ERROR VECTOR MAGNITUDE (% rms) IM7−L −15 −20 −25 −30 −35 −40 930 f, FREQUENCY (MHz) Figure 5. Power Gain, Input Return Loss, EVM and Drain Efficiency versus Frequency @ Pout = 17.8 Watts Avg. 21 IDQ = 450 mA 20 Gps, POWER GAIN (dB) 19 18 150 mA 17 16 15 1 10 Pout, OUTPUT POWER (WATTS) CW 100 VDD = 28 Vdc f = 940 MHz 300 mA 225 mA 375 mA −10 −20 −30 −40 IM5−U −50 −60 IM7−U −70 0.1 1 100 VDD = 28 Vdc, Pout = 44 W (PEP), IDQ = 300 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz IMD, INTERMODULATION DISTORTION (dBc) TWO−TONE SPACING (MHz) Figure 6. Power Gain versus Output Power Figure 7. Intermodulation Distortion Products versus Two - Tone Spacing MRFE6S9046NR1 MRFE6S9046GNR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 24 85_C Gps 20 25_C 18 85_C VDD = 28 Vdc IDQ = 300 mA f = 940 MHz 10 Pout, OUTPUT POWER (WATTS) CW 70 30 TC = −30_C 25_C 45 EVM, ERROR VECTOR MAGNITUDE (% rms) −30_C 75 6 5 4 3 17.8 W Avg. 2 1 5 W Avg. 0 900 910 920 930 940 950 960 970 980 VDD = 28 Vdc IDQ = 285 mA EDGE Modulation Pout = 26.5 W Avg. 16 ηD 14 1 15 0 ηD, DRAIN EFFICIENCY (%) 22 Gps, POWER GAIN (dB) 60 f, FREQUENCY (MHz) Figure 8. Power Gain and Drain Efficiency versus Output Power −40 SPECTRAL REGROWTH @ 400 kHz (dBc) −45 −50 TC = 85_C −55 −30_C −60 −65 −70 −75 0 10 20 30 40 50 Pout, OUTPUT POWER (WATTS) VDD = 28 Vdc, IDQ = 285 mA f = 940 MHz, EDGE Modulation SPECTRAL REGROWTH @ 600 kHz (dBc) 25_C −50 −55 −60 −65 −70 −75 −80 −85 0 Figure 9. EVM versus Frequency VDD = 28 Vdc, IDQ = 285 mA f = 940 MHz, EDGE Modulation TC = 85_C 25_C −30_C 10 20 30 40 50 Pout, OUTPUT POWER (WATTS) Figure 10. Spectral Regrowth at 400 kHz versus Output Power 20 18 16 14 12 10 8 6 4 2 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 60 ηD EVM 85_C −30_C VDD = 28 Vdc, IDQ = 285 mA f = 940 MHz, EDGE Modulation TC = −30_C 25_C 85_C 65 59 ηD, DRAIN EFFICIENCY (%) 53 47 41 35 29 23 17 11 5 16 900 21 Gps, POWER GAIN (dB) 20 19 22 Figure 11. Spectral Regrowth at 600 kHz versus Output Power EVM, ERROR VECTOR MAGNITUDE (% rms) TC = −30_C 25_C 85_C 18 17 VDD = 28 Vdc Pout = 35 W CW IDQ = 300 mA 910 920 930 940 950 960 970 980 f, FREQUENCY (MHz) Figure 12. EVM and Drain Efficiency versus Output Power Figure 13. Power Gain versus Frequency MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 20 Gain 15 0 109 108 MTTF (HOURS) −6 GAIN (dB) 10 −12 IRL (dB) 107 106 105 5 IRL 0 VDD = 28 Vdc Pout = 9 dBm IDQ = 300 mA 750 850 950 1050 1150 1250 1350 −18 −24 −5 650 −30 1450 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 35.5 W CW, and ηD = 57%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. f, FREQUENCY (MHz) Figure 14. Broadband Frequency Response Figure 15. MTTF versus Junction Temperature GSM TEST SIGNAL −10 −20 −30 −40 −50 (dB) −60 −70 −80 −90 −100 −110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz Figure 16. EDGE Spectrum MRFE6S9046NR1 MRFE6S9046GNR1 8 RF Device Data Freescale Semiconductor Z o = 10 Ω f = 980 MHz Zload f = 820 MHz f = 980 MHz Zsource f = 820 MHz VDD = 28 Vdc, IDQ = 285 mA, Pout = 17.8 W Avg. f (MHz) 820 840 860 880 900 920 940 960 980 Zsource W 5.03 - j7.29 4.46 - j6.69 4.00 - j6.11 3.62 - j5.64 3.29 - j5.18 3.03 - j4.75 2.80 - j4.36 2.61 - j3.99 2.46 - j3.64 Zload W 7.68 - j3.45 6.97 - j3.53 6.42 - j3.20 5.98 - j2.87 5.65 - j2.52 5.40 - j2.17 5.21 - j1.82 5.09 - j1.47 5.03 - j1.12 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 17. Series Equivalent Source and Load Impedance — GSM EDGE Reference Design MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 9 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 53 52 Pout, OUTPUT POWER (dBm) 51 50 49 48 47 46 45 44 43 23 24 25 26 VDD = 28 Vdc, IDQ = 300 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f = 920 MHz 27 28 29 30 31 32 33 P1dB = 47.57 dBm (57 W) Actual P3dB = 48.22 dBm (66 W) Ideal Pout, OUTPUT POWER (dBm) 52 51 50 49 48 47 46 45 44 43 42 23 24 25 26 VDD = 28 Vdc, IDQ = 300 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f = 960 MHz 27 28 29 30 31 32 33 P3dB = 47.89 dBm (62 W) Ideal P1dB = 47.25 dBm (53 W) Actual Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω P1dB 7.83 - j2.01 Zload Ω 1.25 - j0.52 P1dB Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω 3.79 - j6.51 Zload Ω 4.30 - j2.52 Figure 18. Pulsed CW Output Power versus Input Power @ 28 V @ 920 MHz Figure 19. Pulsed CW Output Power versus Input Power @ 28 V @ 960 MHz MRFE6S9046NR1 MRFE6S9046GNR1 10 RF Device Data Freescale Semiconductor R1 VBIAS Z7 + C10 C5 Z9 Z6 C11 VSUPPLY RF INPUT Z10 Z1 C1 C2 Z2 Z3 C4 Z4 Z5 Z11 Z12 C6 Z13 Z14 C9 Z15 RF OUTPUT Z8 C3 DUT C12 C7 C8 Z1 Z2 Z3 Z4 Z5 Z6* Z7 Z8*, Z9* 1.320″ 0.020″ 0.378″ 0.321″ 0.039″ 0.306″ 0.708″ 0.738″ x 0.044″ x 0.044″ x 0.044″ x 0.450″ x 0.450″ x 0.040″ x 0.051″ x 0.040″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.040″ x 0.450″ Microstrip 0.321″ x 0.450″ Microstrip 0.080″ x 0.280″ Microstrip 0.371″ x 0.044″ Microstrip 0.124″ x 0.044″ Microstrip 1.332″ x 0.044″ Microstrip Rogers R04350, 0.020″, εr = 3.66 * Line length includes microstrip bends Figure 20. MRFE6S9046NR1(GNR1) Test Circuit Schematic — Production Test Fixture Table 7. MRFE6S9046NR1(GNR1) Test Circuit Component Designations and Values — Production Test Fixture Part C1, C9 C2 C3, C4 C5 C6, C7 C8 C10, C12 C11 R1 Description 56 pF Chip Capacitors 3.9 pF Chip Capacitor 6.8 pF Chip Capacitors 0.01 μF Chip Capacitor 3.3 pF Chip Capacitors 5.1 pF Chip Capacitor 39 pF Chip Capacitors 470 μF, 63 V Electrolytic Capacitor 4.7 KΩ, 1/4 W Chip Resistor Part Number ATC600F560BT500XT ATC600F2R4BT500XT ATC600F6R8BT500XT C1825C103K1GAC ATC600F3R3BT500XT ATC600F4R7BT500XT ATC600F390BT500XT MCGPR63V477M13X26 - RH CRCW12064K70FKEA Manufacturer ATC ATC ATC Kemet ATC ATC ATC Multicomp Vishay MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 11 VGS C10 C5 R1 C11 VDS CUT OUT AREA C1 C2 C4 C6 C7 C8 C3 C9 C12 VDS MRFE6S8046GN/MRFE6S9046GN Rev. 0 Figure 21. MRFE6S9046NR1(GNR1) Test Circuit Component Layout — Production Test Fixture MRFE6S9046NR1 MRFE6S9046GNR1 12 RF Device Data Freescale Semiconductor Z o = 10 Ω f = 980 MHz Zload f = 820 MHz f = 980 MHz Zsource f = 820 MHz VDD = 28 Vdc, IDQ = 300 mA, Pout = 35.5 W CW f (MHz) 820 840 860 880 900 920 940 960 980 Zsource W 4.37 - j6.23 3.95 - j5.76 3.60 - j5.53 3.29 - j4.95 3.04 - j4.59 2.83 - j4.24 2.63 - j3.92 2.45 - j3.62 2.31 - j3.33 Zload W 6.55 - j3.27 6.26 - j2.98 6.02 - j2.72 5.86 - j2.48 5.74 - j2.24 5.68 - j1.98 5.64 - j1.74 5.65 - j1.49 5.70 - j1.26 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 22. Series Equivalent Source and Load Impedance — Production Test Fixture MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS MRFE6S9046NR1 MRFE6S9046GNR1 14 RF Device Data Freescale Semiconductor MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 15 MRFE6S9046NR1 MRFE6S9046GNR1 16 RF Device Data Freescale Semiconductor MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 17 MRFE6S9046NR1 MRFE6S9046GNR1 18 RF Device Data Freescale Semiconductor MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 19 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date May 2009 • Initial Release of Data Sheet Description MRFE6S9046NR1 MRFE6S9046GNR1 20 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MRFE6S9046NR1 MRFE6S9046GNR1 Document Number: RF Device Data MRFE6S9046N Rev. 0, 5/2009 Freescale Semiconductor 21