MRFE6S9130HR3_08

Freescale Semiconductor Technical Data Document Number: MRFE6S9130H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.2 dB Drain Efficiency — 30.5% ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRFE6S9130HR3 MRFE6S9130HSR3 880 MHz, 27 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRFE6S9130HR3 CASE 465A - 06, STYLE 1 NI - 780S MRFE6S9130HSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +66 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 130 W CW Case Temperature 75°C, 27 W CW Symbol RθJC Value (2,3) 0.45 0.51 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007, 2008. All rights reserved. MRFE6S9130HR3 MRFE6S9130HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.74 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss — — 1.6 66 — — pF pF VGS(th) VGS(Q) VDS(on) 1 2 — 2.1 2.9 0.22 3 4 0.5 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 10 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. Gps ηD ACPR IRL 18 29 — — 19.2 30.5 - 47.6 - 29 21 — - 46 -9 dB % dBc dB MRFE6S9130HR3 MRFE6S9130HSR3 2 RF Device Data Freescale Semiconductor B2 VBIAS + C7 RF INPUT C6 B1 C14 L2 L1 Z4 Z5 Z6 Z7 C4 Z8 C9 C10 C11 Z9 C8 Z10 Z11 Z12 Z13 + + + + VSUPPLY C15 C16 C17 C18 C19 RF OUTPUT Z14 Z15 Z16 C13 C12 Z17 Z1 C1 Z2 Z3 C2 Z1 Z2 Z3 Z4 Z5 Z6, Z11 0.383″ 1.250″ 0.190″ 0.127″ 0.173″ 0.200″ x 0.080″ x 0.080″ x 0.220″ x 0.220″ x 0.220″ x 0.220″ C3 C5 Z7 Z8 Z9 Z10 Z12 Z13 DUT Microstrip Microstrip Microstrip Microstrip Microstrip x 0.620″ Taper 0.220″ 0.077″ 0.146″ 0.152″ 0.184″ 0.261″ x 0.630″ x 0.630″ x 0.630″ x 0.630″ x 0.220″ x 0.220″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z14 Z15 Z16 Z17 PCB 0.045″ x 0.220″ Microstrip 0.755″ x 0.080″ Microstrip 0.496″ x 0.080″ Microstrip 0.384″ x 0.080″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRFE6S9130HR3(SR3) Test Circuit Schematic Table 5. MRFE6S9130HR3(SR3) Test Circuit Component Designations and Values Part B1, B2 C1, C13, C14 C2 C3, C11 C4, C5 C6 C7, C16, C17, C18 C8, C9 C10 C12 C15 C19 L1, L2 Description Ferrite Beads, Short 47 pF Chip Capacitors 8.2 pF Chip Capacitor 0.8 - 8.0 pF Variable Capacitors, Gigatrim 12 pF Chip Capacitors 20 K pF Chip Capacitor 10 μF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors 11 pF Chip Capacitor 0.6 - 4.5 pF Variable Capacitor, Gigatrim 0.56 μF, 50 V Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 12.5 nH Inductors Part Number 2743019447 ATC100B470JT500XT ATC100B8R2BT500XT 27291SL ATC100B120JT500XT ATC200B203KT50XT T491D106K035AT ATC100B7R5JT500XT ATC100B110JT500XT 27271SL C1825C564J5GAC ESME630ELL471MK25S A04T - 5 Manufacturer Fair Rite ATC ATC Johanson ATC ATC Kemet ATC ATC Johanson Kemet United Chemi - Con Coilcraft MRFE6S9130HR3 MRFE6S9130HSR3 RF Device Data Freescale Semiconductor 3 C19 B2 C7 C6 C16 C17 C18 B1 C4 L1 C8 L2 C15 C14 900 MHz Rev 02 C10 C1 CUT OUT AREA C2 C3 C5 C12 C9 C11 C13 Figure 2. MRFE6S9130HR3(SR3) Test Circuit Component Layout MRFE6S9130HR3 MRFE6S9130HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 20 19.5 19 Gps, POWER GAIN (dB) 18.5 18 17.5 17 16.5 16 15.5 15 820 840 860 880 900 920 940 960 f, FREQUENCY (MHz) ALT1 ACPR Gps VDD = 28 Vdc, Pout = 27 W (Avg.), IDQ = 950 mA N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 IRL ηD, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) −5 −15 −25 −35 −45 −55 ηD, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) 0 −5 −10 −15 −20 −25 −30 IDQ = 500 mA 700 mA 1400 mA −40 IRL, INPUT RETURN LOSS (dB) 1100 mA 950 mA −60 1 10 100 400 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP ηD 34 32 30 28 26 −20 −30 −40 −50 −60 −70 980 Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg. 19 18.5 18 17.5 17 16.5 16 15.5 15 14.5 14 13.5 13 820 ACPR ALT1 840 860 880 900 920 940 960 Gps ηD VDD = 28 Vdc, Pout = 54 W (Avg.) IDQ = 950 mA, N−CDMA IS−95 Pilot, Sync Paging, Traffic Codes 8 Through 13 IRL 50 47 44 41 38 35 −10 −20 −30 −40 −50 −60 −70 980 Gps, POWER GAIN (dB) f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 54 Watts Avg. 21 20 Gps, POWER GAIN (dB) 1100 mA 19 950 mA 18 700 mA 17 500 mA 16 15 VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1400 mA −10 VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −20 −30 −50 Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRFE6S9130HR3 MRFE6S9130HSR3 RF Device Data Freescale Semiconductor 5 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 0 −10 −20 −30 −40 −50 −60 1 IM7−L 10 TWO−TONE SPACING (MHz) 60 IM3−L IM3−U VDD = 28 Vdc, Pout = 130 W (PEP) IDQ = 950 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz 60 59 Pout, OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 50 31 32 33 34 Actual VDD = 28 Vdc, IDQ = 950 mA, Pulsed CW 12 μsec(on), 1% Duty Cycle, f = 880 MHz 35 36 37 38 39 40 P1dB = 51.15 dBm (130.31 W) P3dB = 52.26 dBm (168.27 W) P6dB = 52.95 dBm (197.24 W) Ideal IM5−L IM5−U IM7−U Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 60 50 40 30 20 Gps 10 0 1 10 ACPR ηD VDD = 28 Vdc, IDQ = 950 mA, f = 880 MHz N−CDMA IS−95, Pilot, Sync, Paging Traffic Codes 8 Through 13 Figure 8. Pulsed CW Output Power versus Input Power −20 −30 −40 −50 ALT1 TC = −30_C −60 85_C 25_C 100 −70 −80 200 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) ηD, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (WATTS) CW Figure 9. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power 21 20 Gps, POWER GAIN (dB) 19 18 17 16 15 14 1 ηD VDD = 28 Vdc IDQ = 950 mA f = 880 MHz 10 100 Gps TC = −30_C 25_C 85_C 25_C −30_C 60 85_C 50 40 30 20 10 0 400 70 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRFE6S9130HR3 MRFE6S9130HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 20 19 Gps, POWER GAIN (dB) 18 17 16 15 14 0 50 100 150 200 250 Pout, OUTPUT POWER (WATTS) CW VDD = 24 V 32 V 28 V IDQ = 950 mA f = 880 MHz 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 27 W Avg., and ηD = 30.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 107 108 MTTF (HOURS) (dB) 8 10 106 Figure 11. Power Gain versus Output Power Figure 12. MTTF versus Junction Temperature N - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 PEAK−TO−AVERAGE (dB) IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 1.2288 MHz Channel BW . .. .... .. .. .................... ........ .. . ...... ...... ............. . .. . . . . . . . . . . . . . . . . . . . −ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . . ............ ........... ...... ...... ..... ..... .. . ... .. . . ...... ....... ....... .... . . .. . ...... ......... .. . ...... .. ... .. . .... ....... ..... .... . ...... ..... .... ..... . ..... .. .... ... . ...... ......... .... ... .. ...... .. ........ .. .. ...... . −ACPR in 30 kHz +ACPR in 30 kHz .......... .. .... . ....... ... ......... . ............ .... .. ........ ... .... ............ . Integrated BW Integrated BW .. ...... ............. .... ..... .. .......... ... .. ... .. . Figure 13. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 14. Single - Carrier N - CDMA Spectrum MRFE6S9130HR3 MRFE6S9130HSR3 RF Device Data Freescale Semiconductor 7 f = 910 MHz Zload Zo = 2 Ω f = 850 MHz f = 910 MHz Zsource f = 850 MHz VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. f MHz 850 865 880 895 910 Zsource Ω 0.89 - j1.18 0.87 - j1.03 0.85 - j0.89 0.83 - j0.75 0.84 - j0.64 Zload Ω 1.50 - j0.09 1.52 + j0.11 1.55 + j0.31 1.60 + j0.51 1.68 + j0.71 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRFE6S9130HR3 MRFE6S9130HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE CASE 465 - 06 ISSUE G NI - 780 MRFE6S9130HR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) (FLANGE) B 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A CASE 465A - 06 ISSUE H NI - 780S MRFE6S9130HSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRFE6S9130HR3 MRFE6S9130HSR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date April 2007 Dec. 2008 • Initial Release of Data Sheet • Updated Full Frequency Band in Typical Performance bullet to f = 880 MHz to match actual production test, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2 • Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 Description MRFE6S9130HR3 MRFE6S9130HSR3 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007, 2008. All rights reserved. MRFE6S9130HR3 MRFE6S9130HSR3 Document Number: RF Device Data MRFE6S9130H Rev. 1, 12/2008 Freescale Semiconductor 11