MRFE6VP5600HR6_11

Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. • Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (100 μsec, 20% Duty Cycle) CW Pout (W) 600 Peak 600 Avg. f (MHz) 230 230 Gps (dB) 25.0 24.6 ηD (%) 74.6 75.2 IRL (dB) --18 --17 MRFE6VP5600HR6 MRFE6VP5600HSR6 1.8-600 MHz, 600 W CW, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness • 600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec Features • Unmatched Input and Output Allowing Wide Frequency Range Utilization • Device can be used Single--Ended or in a Push--Pull Configuration • Qualified Up to a Maximum of 50 VDD Operation • Characterized from 30 V to 50 V for Extended Power Range • Suitable for Linear Application with Appropriate Biasing • Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Characterized with Series Equivalent Large--Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 12. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC PD TJ Value --0.5, +130 --6.0, +10 -- 65 to +150 150 1667 8.33 225 Unit Vdc Vdc °C °C W W/°C °C RFin/VGS 4 2 RFout/VDS RFin/VGS 3 1 RFout/VDS CASE 375D-05, STYLE 1 NI-1230 MRFE6VP5600HR6 CASE 375E-04, STYLE 1 NI-1230S MRFE6VP5600HSR6 PARTS ARE PUSH-PULL (Top View) Figure 1. Pin Connections Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 68°C, 600 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz Case Temperature 60°C, 600 W CW, 100 mA, 230 MHz Symbol ZθJC RθJC Value (2,3) 0.022 0.12 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010--2011. All rights reserved. MRFE6VP5600HR6 MRFE6VP5600HSR6 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) B (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics (1) Symbol IGSS V(BR)DSS IDSS IDSS Min — 130 — — Typ — — — — Max 1 — 10 20 Unit μAdc Vdc μAdc μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mA) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 960 μAdc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test) Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) VGS(th) VGS(Q) VDS(on) 1.7 2.0 — 2.2 2.5 0.26 2.7 3.0 — Vdc Vdc Vdc Crss Coss Ciss — — — 1.60 129 342 — — — pF pF pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 600 W Peak (120 W Avg.), f = 230 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss 1. Each side of device measured separately. Gps ηD IRL 23.5 73.5 — 25.0 74.6 --18 26.5 — --12 dB % dB MRFE6VP5600HR6 MRFE6VP5600HSR6 2 RF Device Data Freescale Semiconductor VBIAS + C10 C11 C12 C13 R1 Z11 COAX1 Z3 RF INPUT Z1 Z2 C1 Z4 C3 C2 Z5 Z7 Z9 L1 Z13 Z6 C4 Z8 C5 Z10 L2 Z14 Z12 COAX2 VBIAS R2 + C6 C7 C8 C9 + L3 Z19 Z17 Z15 Z21 Z23 Z25 C22 C23 + C24 + C25 VSUPPLY COAX3 C16 C17 Z31 RF Z32 OUTPUT C21 Z27 Z29 DUT C14 C15 C20 Z16 Z22 Z18 Z20 L4 Z24 Z26 C18 C19 Z28 Z30 COAX4 + C26 C27 + C28 + C29 VSUPPLY Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 0.192″ x 0.082″ Microstrip 0.175″ x 0.082″ Microstrip 0.170″ x 0.100″ Microstrip 0.116″ x 0.285″ Microstrip 0.116″ x 0.285″ Microstrip 0.108″ x 0.285″ Microstrip Z11*, Z12* Z13, Z14 Z15, Z16 Z17*, Z18* Z19*, Z20* Z21, Z22 0.872″ x 0.058″ Microstrip 0.412″ x 0.726″ Microstrip 0.371″ x 0.507″ Microstrip 0.466″ x 0.363″ Microstrip 1.187″ x 0.154″ Microstrip 0.104″ x 0.507″ Microstrip Z23, Z24 Z25, Z26 Z27, Z28 Z29, Z30 Z31 Z32 1.251″ x 0.300″ Microstrip 0.127″ x 0.300″ Microstrip 0.058″ x 0.300″ Microstrip 0.058″ x 0.300″ Microstrip 0.186″ x 0.082″ Microstrip 0.179″ x 0.082″ Microstrip * Line length includes microstrip bends Figure 1. MRFE6VP5600HR6(HSR6) Test Circuit Schematic - Pulsed MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 3 C23 C10 C11 C12 C13 C22 COAX1 R1 C24 C25 COAX3 L3 C2 C4 L1 L2 C5 C14 C15 C16 C17 C18 C19 C20 C1 C3 C21 COAX2 R2 L4 COAX4 C26 C6 C7 C8 C9 MRFE6VP5600H Rev. 1 C27 C28 C29 Figure 2. MRFE6VP5600HR6(HSR6) Test Circuit Component Layout - Pulsed - Table 5. MRFE6VP5600HR6(HSR6) Test Circuit Component Designations and Values - Pulsed Part C1 C2, C3 C4 C5 C6, C10 C7, C11 C8, C12 C9, C13, C22, C26 C14 C15 C16, C17, C18, C19 C20 C21 C23, C24, C25, C27, C28, C29 Coax1, 2, 3, 4 L1, L2 L3, L4 R1, R2 PCB Description 12 pF Chip Capacitor 27 pF Chip Capacitors 0.8--8.0 pF Variable Capacitor, Gigatrim 33 pF Chip Capacitor 22 μF, 35 V Tantalum Capacitors 0.1 μF Chip Capacitors 220 nF Chip Capacitors 1000 pF Chip Capacitors 36 pF Chip Capacitor 51 pF Chip Capacitor 240 pF Chip Capacitors 39 pF Chip Capacitor 10 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitors 25 Ω Semi Rigid Coax, 2.2″ Long 5 nH Inductors 6.6 nH Inductors 10 Ω Chip Resistors 0.030″, εr = 2.55 Part Number ATC100B120JT500XT ATC100B270JT500XT 27291SL ATC100B330JT500XT T491X226K035AT CDR33BX104AKYS C1812C224K5RACTU ATC100B102JT50XT ATC100B360JT500XT ATC100B510GT500XT ATC100B241JT200XT ATC100B390JT500XT ATC100B100JT500XT MCGPR63V477M13X26--RH UT--141C--25 A02TKLC GA3093--ALC CRCW120610R0JNEA AD255A Manufacturer ATC ATC Johanson ATC Kemet AVX Kemet ATC ATC ATC ATC ATC ATC Multicomp Micro Coax Coilcraft Coilcraft Vishay Arlon MRFE6VP5600HR6 MRFE6VP5600HSR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 1000 Pout, OUTPUT POWER (dBm) PULSED Ciss C, CAPACITANCE (pF) 64 63 62 61 60 59 58 57 31 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 Coss P3dB = 58.3 dBm (679 W) P2dB = 58.2 dBm (664 W) P1dB = 58.0 dBm (632 W) Ideal Actual Crss 1 0 10 20 30 40 50 32 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 33 34 35 Pin, INPUT POWER (dBm) PULSED 36 37 Note: Each side of device measured separately. Figure 3. Capacitance versus Drain-Source Voltage 27 26 Gps, POWER GAIN (dB) 25 24 23 22 21 20 40 ηD Gps VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 90 80 Gps, POWER GAIN (dB) 70 60 50 40 30 20 1000 ηD, DRAIN EFFICIENCY (%) 27 26 25 24 23 22 21 20 19 18 17 0 Figure 4. Pulsed Output Power versus Input Power VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 50 V 45 V 40 V 35 V VDD = 30 V 100 200 300 400 500 600 700 Pout, OUTPUT POWER (WATTS) PULSED 100 Pout, OUTPUT POWER (WATTS) PULSED Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power 90 80 ηD, DRAIN EFFICIENCY (%) 70 60 50 40 30 20 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 0 100 200 300 400 500 600 700 VDD = 30 V 35 V 40 V 45 V 50 V Gps, POWER GAIN (dB) 27 26 25 24 23 25_C 22 21 20 40 85_C Figure 6. Pulsed Power Gain versus Output Power 90 85_C 80 ηD, DRAIN EFFICIENCY (%) VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 25_C Gps TC = --30_C --30_C 70 60 50 40 ηD 30 20 1000 100 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 7. Pulsed Drain Efficiency versus Output Power Figure 8. Pulsed Power Gain and Drain Efficiency versus Output Power MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 109 108 MTTF (HOURS) 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 600 W Avg., and ηD = 75.2%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 9. MTTF versus Junction Temperature — CW MRFE6VP5600HR6 MRFE6VP5600HSR6 6 RF Device Data Freescale Semiconductor Zsource f = 230 MHz f = 230 MHz Zload Zo = 10 Ω VDD = 50 Vdc, IDQ = 100 mA, Pout = 600 W Peak f MHz 230 Zsource Ω 1.78 + j5.45 Zload Ω 2.75 + j5.30 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- Output Matching Network -Z source Z + load Figure 10. Series Equivalent Source and Load Impedance MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS MRFE6VP5600HR6 MRFE6VP5600HSR6 8 RF Device Data Freescale Semiconductor MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 9 MRFE6VP5600HR6 MRFE6VP5600HSR6 10 RF Device Data Freescale Semiconductor MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRFE6VP5600H and MRFE6VP5600HS parts will be available for 2 years after release of MRFE6VP5600H and MRFE6VP5600HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRFE6VP5600H and MRFE6VP5600HS in the R6 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Dec. 2010 Jan. 2011 • Initial Release of Data Sheet • Fig. 1, Pin Connections, corrected pin 4 label from RFout/VGS to RFin/VGS, p. 1 Description MRFE6VP5600HR6 MRFE6VP5600HSR6 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010--2011. All rights reserved. MRFE6VP5600HR6 MRFE6VP5600HSR6 Document Number: RF Device Data MRFE6VP5600H Rev. 1, 1/2011 Freescale Semiconductor 13