MRFG35010R1

Freescale Semiconductor Technical Data MRFG35010R1 replaced by MRFG35010AR1. Document Number: MRFG35010 Rev. 9, 1/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 1 Watt Power Gain — 10 dB Efficiency — 30% • 10 Watts P1dB @ 3550 MHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. MRFG35010R1 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT ARCHIVE INFORMATION CASE 360D - 02, STYLE 1 NI - 360HF Table 1. Maximum Ratings Rating Drain - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS PD VGS Pin Tstg Tch TC Value 15 28.3 0.19 -5 33 - 65 to +175 175 - 20 to +90 Unit Vdc W W/°C Vdc dBm °C °C °C Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Class A Class AB Symbol RθJC Value 5.3 4.8 Unit °C/W 1. For reliable operation, the operating channel temperature should not exceed 150°C. © Freescale Semiconductor, Inc., 2008. All rights reserved. MRFG35010R1 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 12 Vdc, VGS = - 1.9 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) Quiescent Gate Voltage (VDS = 12 Vdc, ID = 180 mA) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Gps P1dB hD Min — — — — - 1.2 -1 9 — 23 Typ 2.9