MW4IC915NBR1_06

Freescale Semiconductor Technical Data MW4IC915N Rev. 7, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On- Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N - CDMA and W - CDMA. Final Application • Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = 15 Watts CW, Full Frequency Band (860 - 960 MHz) Power Gain — 30 dB Power Added Efficiency — 44% Driver Application • Typical GSM/GSM EDGE Performances: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = 3 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain — 31 dB Power Added Efficiency — 19% Spectral Regrowth @ 400 kHz Offset = - 65 dBc Spectral Regrowth @ 600 kHz Offset = - 83 dBc EVM — 1.5% • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application(1) • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. VRD2 VRG2 VDS1 RFin VRD1 VRG1 VGS1 VGS2 VDS2/RFout MW4IC915NBR1 MW4IC915GNBR1 860 - 960 MHz, 15 W, 26 V GSM/GSM EDGE, N - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC915NBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC915GNBR1 GND VRD2 VRG2 VDS1 VRD1 RFin VRG1 VGS1 VGS2 NC GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND NC 14 RFout/ VDS2 13 12 NC GND Quiescent Current Temperature Compensation (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. © Freescale Semiconductor, Inc., 2006. All rights reserved. MW4IC915NBR1 MW4IC915GNBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5. +65 - 0.5. +15 - 65 to +175 200 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case GSM Application (Pout = 15 W CW) GSM EDGE Application (Pout = 7.5 W CW) CDMA Application (Pout = 3.75 W CW) Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA Symbol RθJC 7.3 1.7 7.3 1.8 7.4 1.9 Value (1) Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDS = 26 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 15 W PEP, f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz, Two - Tone Power Gain Power Added Efficiency Intermodulation Distortion Input Return Loss Gps PAE IMD IRL 29 29 — — 31 31 - 40 - 15 — — - 29 - 10 dB % dBc dB 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued) MW4IC915NBR1 MW4IC915GNBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued ) Characteristic Quiescent Current Accuracy over Temperature with 1.8 kΩ Gate Feed Resistors ( - 10 to 85°C) (1) Gain Flatness in 40 MHz Bandwidth @ Pout = 3 W CW Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 3 W CW Delay @ Pout = 3 W CW Including Output Matching Part - to - Part Phase Variation @ Pout = 3 W CW Symbol ΔIQT GF Φ Delay ΔΦ Min — — — — — Typ ±5 0.2 ±0.6 2.5 ±15 Max — — — — — Unit % dB ° ns ° Typical Performances (In Freescale Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, 869 MHz960 MHz Typical GSM/GSM EDGE Performances (In Freescale Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, 869 MHz