MW6IC2240GNBR1

Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Final Application • Typical 2 -Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 Watts Avg., Full Frequency Band (2110 -2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 28 dB Power Added Efficiency — 15% IM3 @ 10 MHz Offset — -43 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — -46 dBc in 3.84 MHz Bandwidth Driver Application • Typical 2 -Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 300 mA, IDQ2 = 320 mA, Pout = 25 dBm, Full Frequency Band (2110 2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 29 dB IM3 @ 10 MHz Offset — -59 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — -62 dBc in 3.84 MHz Bandwidth • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 W CW Pout. • Characterized with Series Equivalent Large -Signal Impedance Parameters and Common Source Scattering Parameters • On -Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead -Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MW6IC2240NBR1 MW6IC2240GNBR1 2110 -2170 MHz, 4.5 W AVG., 28 V 2 x W -CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329-09 TO-272 WB-16 PLASTIC MW6IC2240NBR1 CASE 1329A-03 TO-272 WB-16 GULL PLASTIC MW6IC2240GNBR1 VDS1 RFin RFout/VDS2 GND VDS1 NC NC NC RFin NC VGS1 VGS2 VDS1 GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND NC 14 RFout / VDS2 VGS1 VGS2 VDS1 Quiescent Current Temperature Compensation 13 12 NC GND Figure 1. Functional Block Diagram (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections  Freescale Semiconductor, Inc., 2006. All rights reserved. MW6IC2240NBR1 MW6IC2240GNBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value -0.5, +68 -0.5, +6 -65 to +200 200 23 Unit Vdc Vdc °C °C dBm Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case W-CDMA Application (Pout = 4.5 W Avg.) W-CDMA Application (Pout = 40 W CW) Stage 1, 28 Vdc, IDQ = 210 mA Stage 2, 28 Vdc, IDQ = 370 mA Stage 1, 28 Vdc, IDQ = 110 mA Stage 2, 28 Vdc, IDQ = 370 mA Symbol RθJC 1.8 1.0 2.0 0.87 Value (1,2) Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1A (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 2110-2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Power Added Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss Gps PAE IM3 ACPR IRL 25.5 13.7 — — — 28 15 -43 -46 -15 30 — -40 -43 -10 dB % dBc dBc dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued) MW6IC2240NBR1 MW6IC2240GNBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, 2110 MHz