MW6IC2420NBR1

Freescale Semiconductor Technical Data Document Number: MW6IC2420N Rev. 1, 4/2008 RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on - chip matching that makes it usable at 2450 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical modulation formats. Driver Applications • Typical CW Performance at 2450 MHz: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 20 Watts Power Gain — 19.5 dB Power Added Efficiency — 27% • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 W CW Pout. Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MW6IC2420NBR1 2450 MHz, 20 W, 28 V CW RF LDMOS INTEGRATED POWER AMPLIFIER CASE 1329 - 09 TO - 272 WB - 16 PLASTIC VDS1 RFin RFout/VDS2 GND VDS1 NC NC NC RFin NC VGS1 VGS2 VDS1 GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND NC 14 RFout / VDS2 VGS1 VGS2 VDS1 Quiescent Current Temperature Compensation (1) 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2007-2008. All rights reserved. MW6IC2420NBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Input Power (1,2) Symbol VDSS VGS Tstg TC TJ Pin Value - 0.5, +68 - 0.5, +6 - 65 to +200 150 225 23 Unit Vdc Vdc °C °C °C dBm Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case W - CDMA Application (Pout = 4.5 W Avg.) Stage 1, 28 Vdc, IDQ = 210 mA Stage 2, 28 Vdc, IDQ = 370 mA Symbol RθJC 1.8 1 Value (2,3) Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Power Added Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss Gps PAE IM3 ACPR IRL 25.5 13.7 — — — 28 15 - 43 - 46 - 15 30 — - 40 - 43 - 10 dB % dBc dBc dB 1. Continuous use at maximum temperature will affect MTTF. (continued) 2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. MW6IC2420NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, 2110 - 2170 MHz Video Bandwidth @ 20 W PEP Pout where IM3 = - 30 dBc VBW MHz — 30 — (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz