MW6S004NT1

Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 1, 4/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain — 18 dB Drain Efficiency — 33% IMD — - 34 dBc • Typical Two - Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain — 19 dB Drain Efficiency — 33% IMD — - 39 dBc • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip RF Feedback for Broadband Stability • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MW6S004NT1 1 - 2000 MHz, 4 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 76°C, 4 W PEP, Two - Tone Case Temperature 79°C, 4 W CW Symbol RθJC Value (1,2) 8.8 8.5 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) III (Minimum) 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.  Freescale Semiconductor, Inc., 2006. All rights reserved. MW6S004NT1 1 RF Device Data Freescale Semiconductor Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 50 mAdc) Gate Quiescent Voltage(1) (VDS = 28 Vdc, ID = 50 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 50 mAdc) Dynamic Characteristics Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Crss Coss — — — 30 21 25 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 1 2 — 2.3 2.8 0.27 5 4 0.37 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 10 500 µAdc µAdc nAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP, f1 = 1960 MHz, f2 = 1960.1 MHz, Two - Tone Test Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss Gps ηD IMD IRL 16.5 28 — — 18 33 - 34 - 12 20 — - 28 - 10 dB % dBc dB Typical Performances (In Freescale 900 MHz Demo Board, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP, f = 900 MHz, Two - Tone Test, 100 kHz Tone Spacing Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss 11/ 10 Gps ηD IMD IRL — — — — 19 33 - 39 - 12 — — — — dB % dBc dB 1. VGG = x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit Schematic. MW6S004NT1 2 RF Device Data Freescale Semiconductor R1 VBIAS + C8 R2 C1 C7 Z5 Z10 R3 Z1 C2 Z2 Z3 Z4 Z6 Z7 Z8 C6 DUT Z9 C3 C4 C5 VSUPPLY RF OUTPUT RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 0.054″ x 0.430″ Microstrip 0.054″ x 0.137″ Microstrip 0.580″ x 0.420″ Microstrip 0.580″ x 0.100″ Microstrip 0.025″ x 0.680″ Microstrip 0.210″ x 0.100″ Microstrip Z7 Z8 Z9 Z10 PCB 0.210″ x 1.220″ Microstrip 0.054″ x 0.680″ Microstrip 0.054″ x 0.260″ Microstrip 0.025″ x 0.930″ Microstrip Arlon CuClad 250, 0.020″, εr = 2.5 Figure 1. MW6S004NT1 Test Circuit Schematic Table 6. MW6S004NT1 Test Circuit Component Designations and Values Part C1 C2, C3, C6, C7 C4, C5 C8 R1 R2 R3 Description 100 nF Chip Capacitor (1206) 9.1 pF 600B Chip Capacitors 10 µF, 50 V Chip Capacitors 10 µF, 35 V Tantalum Chip Capacitor 1 kΩ Chip Resistor (1206) 10 kΩ Chip Resistor (1206) 10 Ω Chip Resistor (1206) Part Number CDR33BX104AKWS 600B9R1CW GRM55DR61H106KA88B T490D106K035AS Manufacturer Kemet ATC Murata Kemet MW6S004NT1 RF Device Data Freescale Semiconductor 3 25 C8 R1 R2 C1 C7 C3 C4 C5 C2 R3 C6 MW6S004N Rev 3 Figure 2. MW6S004NT1 Test Circuit Component Layout MW6S004NT1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 18.4 18.2 18 Gps, POWER GAIN (dB) 17.8 17.6 17.4 17.2 17 16.8 16.6 16.4 1930 1940 1950 IM3 1960 1970 1980 IRL VDD = 28 Vdc, Pout = 2 W (Avg.) IDQ = 50 mA, 100 kHz Tone Spacing Gps ηD 34 33 32 31 30 −30 −31 IM3 (dBc) −32 −33 −34 −35 1990 ηD, DRAIN EFFICIENCY (%) −8 −12 −16 −20 −24 −28 f, FREQUENCY (MHz) Figure 3. Two - Tone Wideband Performance @ Pout = 2 Watts Avg. IDQ = 75 mA 62.5 mA IMD, INTERMODULATION DISTORTION (dBc) 20 19 Gps, POWER GAIN (dB) 18 17 16 −10 −20 −30 −40 −50 −60 −70 7th Order −80 0.01 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP 3rd Order VDD = 28 Vdc, IDQ = 50 mA f1 = 1960 MHz, f2 = 1960.1 MHz Two−Tone Measurements 50 mA 37.5 mA 25 mA 15 14 0.01 VDD = 28 Vdc f1 = 1960 MHz, f2 = 1960.1 MHz Two−Tone Measurements 0.1 1 10 20 5th Order Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two - Tone Power Gain versus Output Power −25 −30 −35 3rd Order −40 −45 −50 −55 7th Order −60 0.1 33 1 10 100 14 5th Order VDD = 28 Vdc, Pout = 2 W (Avg.), IDQ = 50 mA (f1 + f2)/2 = Center Frequency of 1960 MHz Pout, OUTPUT POWER (dBm) Figure 5. Intermodulation Distortion Products versus Output Power 47 P6dB = 38.73 dBm (7.465 W) 45 43 41 P1dB = 37.61 dBm (5.768 W) 39 Actual 37 35 VDD = 28 Vdc, IDQ = 50 mA Pulsed CW, 8 µsec(on), 1 msec(off) f = 1960 MHz 16 18 20 22 24 26 P3dB = 38.22 dBm (6.637 W) Ideal IMD, INTERMODULATION DISTORTION (dBc) TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power IRL, INPUT RETURN LOSS (dB) MW6S004NT1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 VDD = 28 Vdc, IDQ = 50 mA f = 1960 MHz, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) −20 40 −30 20 Gps −50 10 0 ACPR ηD −60 −70 0.01 0.1 1 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Single - Carrier CDMA ACPR, Power Gain and Drain Efficiency versus Output Power 20 19 Gps, POWER GAIN (dB) 18 17 16 15 14 0.01 VDD = 28 Vdc IDQ = 50 mA f = 1960 MHz TC = −30_C 25_C 85_C Gps −30_C 50 85_C 40 30 20 ηD 10 0 0.1 1 10 Pout, OUTPUT POWER (WATTS) CW ηD, DRAIN EFFICIENCY (%) 60 Figure 9. Power Gain and Drain Efficiency versus CW Output Power 22 IDQ = 50 mA f = 1960 MHz 0 19 18.5 Gps, POWER GAIN (dB) 18 17.5 S21 (dB) 17 16.5 16 15.5 15 0 1 VDD = 12 V 2 3 4 5 6 28 V 7 32 V 8 16 V 20 V 24 V ACPR (dB) 30 −40 20 S21 −5 18 −10 S11 (dB) 16 VDD = 28 Vdc Pout = 2 W CW IDQ = 50 mA 1850 1900 −15 14 −20 S11 −25 2100 12 1800 1950 2000 2050 Pout, OUTPUT POWER (WATTS) CW f, FREQUENCY (MHz) Figure 10. Power Gain versus Output Power Figure 11. Broadband Frequency Response MW6S004NT1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 107 MTTF FACTOR (HOURS x AMPS2) 106 105 104 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature MW6S004NT1 RF Device Data Freescale Semiconductor 7 f = 1990 MHz Zload Zo = 10 Ω f = 1930 MHz f = 1990 MHz Zsource f = 1930 MHz VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP f MHz 1930 1960 1990 Zsource W 1.96 - j5.34 1.89 - j5.10 1.82 - j4.85 Zload W 8.78 + j6.96 8.93 + j7.46 9.11 + j7.97 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 13. Series Equivalent Source and Load Impedance MW6S004NT1 8 RF Device Data Freescale Semiconductor Table 7. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system) IDQ = 50 mA f MHz MH 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 S11 |S11| 0.649 0.695 0.733 0.770 0.800 0.827 0.848 0.866 0.882 0.895 0.907 0.916 0.923 0.929 0.935 0.938 0.942 0.945 0.948 0.951 0.953 0.954 0.955 0.956 0.957 0.957 0.958 0.959 0.959 0.960 0.959 0.959 0.958 0.958 0.957 0.957 0.955 0.954 0.953 0.953 ∠φ - 116.340 - 121.680 - 126.560 - 131.340 - 135.740 - 140.030 - 143.950 - 147.690 - 151.140 - 154.560 - 157.590 - 160.540 - 163.310 - 165.930 - 168.430 - 170.770 - 173.030 - 175.140 - 177.170 - 179.090 179.030 177.270 175.570 173.980 172.350 170.800 169.340 167.920 166.510 165.200 163.800 162.420 161.170 159.840 158.560 157.160 155.870 154.510 153.120 151.730 |S21| 7.902 7.502 7.111 6.699 6.302 5.922 5.552 5.220 4.891 4.597 4.315 4.060 3.819 3.601 3.398 3.210 3.036 2.875 2.728 2.590 2.464 2.347 2.240 2.139 2.047 1.958 1.879 1.806 1.736 1.668 1.611 1.555 1.504 1.456 1.412 1.372 1.334 1.300 1.268 1.238 S21 ∠φ 105.420 98.790 92.380 86.290 80.450 74.850 69.630 64.580 59.970 55.490 51.240 47.170 43.340 39.650 36.110 32.740 29.490 26.360 23.330 20.440 17.640 14.920 12.320 9.740 7.250 4.810 2.440 0.260 - 1.980 - 4.310 - 6.240 - 8.290 - 10.270 - 12.210 - 14.130 - 16.010 - 17.870 - 19.700 - 21.510 - 23.250 |S12| 0.056 0.053 0.049 0.045 0.041 0.038 0.035 0.032 0.029 0.026 0.024 0.022 0.020 0.018 0.017 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.008 0.007 0.007 0.006 0.006 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.005 S12 ∠φ - 73.750 - 80.570 - 87.010 - 93.280 - 99.120 - 104.850 - 110.110 - 115.220 - 119.960 - 124.790 - 129.090 - 133.370 - 137.460 - 141.440 - 145.330 - 149.540 - 153.430 - 157.460 - 161.910 - 166.180 - 170.630 - 174.890 179.950 173.920 167.710 161.810 155.370 148.940 142.630 136.740 129.910 123.810 118.200 112.740 108.460 103.840 99.310 95.360 91.030 87.460 |S22| 0.548 0.593 0.632 0.669 0.701 0.727 0.750 0.770 0.786 0.800 0.813 0.824 0.833 0.840 0.847 0.851 0.856 0.859 0.863 0.866 0.869 0.872 0.875 0.877 0.880 0.882 0.884 0.886 0.887 0.888 0.890 0.891 0.892 0.893 0.894 0.896 0.896 0.897 0.898 0.899 S22 ∠φ - 33.570 - 41.480 - 48.890 - 56.000 - 62.810 - 69.290 - 75.350 - 81.130 - 86.570 - 91.730 - 96.660 - 101.340 - 105.790 - 110.050 - 114.170 - 118.060 - 121.880 - 125.520 - 129.020 - 132.390 - 135.650 - 138.760 - 141.750 - 144.650 - 147.480 - 150.180 - 152.760 - 155.230 - 157.580 - 160.050 - 162.070 - 164.190 - 166.140 - 168.060 - 169.840 - 171.610 - 173.260 - 174.830 - 176.390 - 177.840 MW6S004NT1 RF Device Data Freescale Semiconductor 9 Table 7. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system) (continued) IDQ = 50 mA f MHz MH 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 S11 |S11| 0.952 0.950 0.949 0.948 0.944 0.944 0.943 0.941 0.940 0.938 0.937 ∠φ 150.340 149.010 147.380 145.920 144.200 142.790 141.020 139.410 137.640 135.900 133.860 |S21| 1.211 1.187 1.166 1.144 1.121 1.105 1.088 1.073 1.058 1.045 1.032 S21 ∠φ - 25.120 - 26.920 - 28.650 - 30.420 - 32.310 - 34.230 - 36.000 - 37.870 - 39.760 - 41.680 - 43.610 |S12| 0.006 0.006 0.006 0.007 0.007 0.007 0.007 0.007 0.008 0.008 0.008 S12 ∠φ 84.160 80.780 77.880 74.670 71.360 67.980 63.950 61.230 59.810 58.280 56.740 |S22| 0.899 0.897 0.897 0.898 0.896 0.897 0.897 0.896 0.896 0.896 0.895 S22 ∠φ - 179.270 179.420 178.120 176.840 175.480 174.060 172.930 171.630 170.330 169.040 167.510 MW6S004NT1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A F 3 B D 1 2 R L NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. 4 N K Q ZONE V 0.35 (0.89) X 45_" 5 _ U H 4 10_DRAFT P C Y Y E ZONE W 1 2 3 G S STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE ZONE X DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 RF Device Data Freescale Semiconductor ÉÉÉÉ É ÉÉÉÉÉÉ ÉÉÉÉ É ÉÉÉÉ É ÉÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉ ÉÉÉÉ É VIEW Y - Y CASE 466 - 03 ISSUE D PLD 1.5 PLASTIC MW6S004NT1 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2006. All rights reserved. MW6S004NT1 1Rev. 1, 4/2006 2 Document Number: MW6S004N RF Device Data Freescale Semiconductor