MW6S010GMR1

Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two - Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain — 18 dB Drain Efficiency — 32% IMD — - 37 dBc • Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip RF Feedback for Broadband Stability • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • N Suffix Indicates Lead - Free Terminations • 200°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 450 - 1500 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270 - 2 PLASTIC MW6S010NR1(MR1) CASE 1265A - 02, STYLE 1 TO - 270 - 2 GULL PLASTIC MW6S010GNR1(GMR1) Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, +12 61.4 0.35 - 65 to +175 200 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 10 W PEP Symbol RθJC Value (1.2) 2.85 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.  Freescale Semiconductor, Inc., 2005. All rights reserved. MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A A III Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 125 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.3 Adc) Dynamic Characteristics Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss — — — 23 10 0.32 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 1.5 — — 2.3 3.1 0.27 3 — 0.35 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP, f = 960 MHz, Two - Tone Test, 100 kHz Tone Spacing Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss Gps ηD IMD IRL 17.5 31 — — 18 32 - 37 - 18 20.5 — - 33 - 10 dB % dBc dB Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP, 420 MHz