MW7IC008NT1

Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 1, 9/2009 RF LDMOS Wideband Integrated Power Amplifier The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical radio base station modulation formats. Driver Applications • Typical CW Performance: VDD = 28 Volts, IDQ1 = 25 mA, IDQ2 = 75 mA Frequency 100 MHz @ 11 W CW 400 MHz @ 9 W CW 900 MHz @ 6.5 W CW Gps (dB) 23.5 22.5 23.5 PAE (%) 55 41 34 MW7IC008NT1 100 - 1000 MHz, 8 W PEAK, 28 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER • Capable of Handling 10:1 VSWR, @ 32 Vdc, 900 MHz, Pout = 6.5 Watts CW (3 dB Input Overdrive from Rated Pout) • Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 8 Watts CW Pout @ 900 MHz • Typical Pout @ 1 dB Compression Point ] 11 Watts CW @ 100 MHz, 9 Watts CW @ 400 MHz, 6.5 Watts CW @ 900 MHz Features • Broadband, Single Matching Network from 20 to 1000 MHz • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel. CASE 1894 - 01 PQFN 8x8 PLASTIC VTTS1 VTTS2 NC Quiescent Current Temperature Compensation (1) VGS1 RFinS1 VGS2 RFoutS2/VDS2 VGLS1 NC NC NC RFinS1 VGS1 24 23 22 21 20 19 1 2 3 4 5 6 RFoutS1/VDS1 RFinS2 NC VGS2 VTTS2 18 17 16 15 14 13 7 8 9 10 11 12 VTTS1 VGLS2 NC NC NC NC NC NC NC NC NC RFoutS2/VDS2 RFoutS1/VDS1 RFinS2 Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2009. All rights reserved. MW7IC008NT1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Operating Junction Temperature 100 MHz CW Operation @ TA = 25°C (3) 400 MHz CW Operation @ TA = 25°C (3) 900 MHz CW Operation @ TA = 25°C (3) Input Power 100 MHz 400 MHz 900 MHz Pin Symbol VDSS VGS VDD Tstg TJ CW Value - 0.5, +65 - 6.0, +12 32, +0 - 65 to +150 150 11 6 5 27 23 38 Unit Vdc Vdc Vdc °C °C W W W dBm Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case (CW Signal @ 100 MHz) (Case Temperature 82°C, Pout = 11 W CW) (CW Signal @ 400 MHz) (Case Temperature 87°C, Pout = 9 W CW) (CW Signal @ 900 MHz) (Case Temperature 86°C, Pout = 6.5 W CW) Symbol RθJC Stage 1, 28 Vdc, IDQ1 = 25 mA Stage 2, 28 Vdc, IDQ2 = 75 mA Stage 1, 28 Vdc, IDQ1 = 25 mA Stage 2, 28 Vdc, IDQ2 = 75 mA Stage 1, 28 Vdc, IDQ1 = 25 mA Stage 2, 28 Vdc, IDQ2 = 75 mA 5.3 4.9 Value (1,2) Unit °C/W 4.4 2.7 3.5 3.2 Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. CW Ratings at the individual frequencies are limited by a 100 year MTTF requirement. See MTTF calculator (referenced in Note 1). (continued) MW7IC008NT1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Stage 1 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 5.3 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 25 mAdc, Measured in Functional Test) Stage 2 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 23 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 75 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) Power Gain Power Added Efficiency Input Return Loss VGS(th) VGS(Q) VDS(on) 1.3 2 0.1 2 2.7 0.3 2.8 3.5 1 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 10 μAdc μAdc μAdc VGS(th) VGS(Q) 1.3 2 2 2.8 2.8 3.5 Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 10 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 6.5 W CW, f = 900 MHz Gps PAE IRL 21.5 30 — Gps (dB) 23.5 22.5 23.5 23.5 34 - 15 PAE (%) 55 41 34 31.5 — - 11 dB % dB IRL (dB) - 20 - 17 - 15 (continued) Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA Frequency 100 MHz @ 11 W CW 400 MHz @ 9 W CW 900 MHz @ 6.5 W CW 1. Part internally matched both on input and output. MW7IC008NT1 RF Device Data Freescale Semiconductor 3 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Characteristic IMD Symmetry @ 6.8 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (1) (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 500 - 1000 MHz Bandwidth @ Pout = 6 W Avg. Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) Symbol Symbol IMDsym Min Min — Typ Typ 180 Max Max — Unit Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, 100 - 1000 MHz Bandwidth VBWres GF ΔG ΔP1dB — — — — 210 1.35 0.024 0.005 — — — — MHz dB dB/°C dBm/°C Typical CW Performances — 100 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 11 W CW, f = 100 MHz Power Gain Power Added Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW Gps PAE IRL P1dB — — — — 23.5 55 - 20 11 — — — — dB % dB W Typical CW Performances — 400 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 9 W CW, f = 400 MHz Power Gain Power Added Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW Gps PAE IRL P1dB — — — — 22.5 41 - 17 9 — — — — dB % dB W Typical CW Performances — 900 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 6.5 W CW, f = 900 MHz Power Gain Power Added Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW 1. Estimated data. Gps PAE IRL P1dB — — — — 23.5 34 - 15 6.5 — — — — dB % dB W MW7IC008NT1 4 RF Device Data Freescale Semiconductor VDD1 VGG2 GND C17 R12 C16 C15 C14 L5 R8 C9 C8 C7 C5 R4 R5 R6 MW7IC008N Rev. 1a R7 L4 C4 L3 R2 R3 C6 C10 L7 L6 C13 R11 R10 R9 C12 VDD2 C3 R1 C11 L2 L1 C2 C1 VGG1 GND Figure 3. MW7IC008NT1 Test Circuit Component Layout Table 6. MW7IC008NT1 Test Circuit Component Designations and Values Part C1 C2, C15 C3, C16 C4, C5, C7, C8, C10, C11, C12, C14 C6, C17 C9 C13 L1, L7 L2, L6 L3 L4, L5 R1, R12 R2, R3, R4 R5*, R9* R6 R7, R11 R8 R10 PCB *Add for temperature compensation Description 0.01 μF Chip Capacitor 0.1 μF Chip Capacitors 10 μF Chip Capacitors 0.01 μF Chip Capacitors 1 μF, 35 V Tantalum Capacitors 2.2 pF Chip Capacitor 3.3 pF Chip Capacitor 150 nH Ceramic Chip Inductors 180 nH Ceramic Chip Inductors 1.6 nH Inductor 5.1 nH Inductors 510 Ω, 1/10 W Chip Resistors 91 Ω, 1/8 W Chip Resistors 0 Ω, 2.5 A Chip Resistors 10 KΩ, 1/8 W Chip Resistor 12 KΩ, 1/8 W Chip Resistors 43 Ω, 1/8 W Chip Resistor 15 KΩ, 1/8 W Chip Resistor 0.020″, εr = 3.5 Part Number GRM3195C1E103JA01 GRM219F51H104ZA01 GRM55DR61H106KA88L C0805C103K5RAC TAJA105K035R ATC600S2R2CT250XT ATC600S3R3BT250XT LL2012- FHLR15J LL2012- FHLR18J 0603HC- 1N6XJLW 0603HP- 5N1XJLW RR1220P- 511 - B - T5 CRCW080591R0FKEA CRCW08050000Z0EA CRCW080510K0JNEA CRCW080512K0JNEA CRCW080543R0FKEA CRCW080515K0JNEA RO4350 Manufacturer Murata Murata Murata Kemet AVX ATC ATC Toko Toko Coilcraft Coilcraft Susumu Vishay Vishay Vishay Vishay Vishay Vishay Rogers MW7IC008NT1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 29 28 27 Gps, POWER GAIN (dB) 26 25 24 23 22 21 20 19 100 200 Pout 300 400 500 600 700 800 900 IRL Gps VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA Fixed Pin = 14.6 dBm CW PAE 70 60 50 40 30 −5 IRL, INPUT RETURN LOSS (dB) −10 −15 −20 −25 −30 1000 PAE, POWER ADDED EFFICIENCY (%) 14 12 10 8 6 4 f, FREQUENCY (MHz) Figure 4. Broadband Performance @ Pin = 14.6 dBm CW IMD, INTERMODULATION DISTORTION (dBc) −10 IM3−L IM3−U IM5−U IM5−L −20 −30 −40 IM7−L −50 IM7−U −60 1 VDD = 28 Vdc, Pout = 6.8 W (PEP) IDQ1 = 25 mA, IDQ2 = 75 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 900 MHz 10 TWO−TONE SPACING (MHz) 100 200 Figure 5. Intermodulation Distortion Products versus Two - Tone Spacing 26 25 Gps, POWER GAIN (dB) 24 23 22 21 20 PAE 19 18 1 10 Pout, OUTPUT POWER (WATTS) CW 20 900 MHz Gps VDD = 28 Vdc IDQ1 = 25 mA IDQ2 = 75 mA 400 MHz 900 MHz 100 MHz 90 PAE, POWER ADDED EFFICIENCY (%) 80 70 60 50 40 100 MHz 400 MHz 30 20 10 Figure 6. Power Gain and Power Added Efficiency versus Output Power MW7IC008NT1 6 RF Device Data Freescale Semiconductor Pout, OUTPUT POWER (WATTS) TYPICAL CHARACTERISTICS 30 20 MHz 25 20 GAIN (dB) 15 IRL 10 5 0 0 200 400 600 800 1000 1200 1400 f, FREQUENCY (MHz) VDD = 28 Vdc Pin = −10 dBm IDQ1 = 25 mA IDQ2 = 75 mA −24 −30 −36 1600 Gain −6 −12 −18 IRL (dB) 0 Figure 7. Broadband Frequency Response MW7IC008NT1 RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA Pout = 11 W @ 100 MHz, 9 W @ 400 MHz, 6.5 W @ 900 MHz f MHz 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 Zin = Zin W 49.78 + j1.07 48.96 + j1.44 48.00 + j1.54 46.67 + j1.36 45.30 + j0.91 43.93 + j0.11 42.53 - j0.86 41.38 - j2.16 40.30 - j3.71 39.38 - j5.44 38.43 - j7.11 37.94 - j8.71 37.49 - j10.52 37.31 - j12.42 37.00 - j14.03 36.74 - j15.64 36.57 - j17.09 36.37 - j18.59 36.12 - j20.06 35.58 - j21.43 35.00 - j22.79 34.53 - j24.39 33.53 - j25.97 32.67 - j27.84 31.61 - j29.89 30.61 - j32.34 29.55 - j34.81 28.23 - j37.61 27.34 - j40.59 Zload W 47.87 - j9.85 49.12 - j5.44 49.09 - j2.66 48.63 - j0.79 47.73 + j0.49 46.60 + j1.22 45.63 + j1.43 44.97 + j1.13 45.04 + j0.70 45.23 + j0.77 44.80 + j1.29 44.32 + j1.48 43.57 + j1.51 43.19 + j1.32 42.61 + j0.77 42.25 + j0.39 41.90 + j0.03 41.67 - j0.41 41.77 - j1.10 41.82 - j1.60 41.90 - j2.01 42.26 - j2.43 42.51 - j2.80 42.74 - j2.99 43.10 - j3.11 43.52 - j3.19 43.86 - j3.13 44.03 - j3.03 44.33 - j2.67 Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground. Zload = Device Under Test Output Matching Network Z in Z load Figure 8. Series Equivalent Input and Load Impedance MW7IC008NT1 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW7IC008NT1 RF Device Data Freescale Semiconductor 9 MW7IC008NT1 10 RF Device Data Freescale Semiconductor MW7IC008NT1 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977 Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987 Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Aug. 2009 Sept. 2009 • Initial Release of Data Sheet • Modified Fig. 3, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values to include temperature compensation options, p. 5 • Fig. 3, Test Circuit Component Layout, corrected VDD1 to VGG1, p. 5 • Table 6, Test Circuit Component Designations and Values, C6, C17: updated description from “1 μF Tantalum Capacitors” to “1 μF, 35 V Tantalum Capacitors”; L1, L7, L2, L6: corrected manufacturer from Coilcraft to Toko; L3: corrected part number from “0603HC - 1N6XJLC” to “0603HC - 1N6XJLW”; L4, L5: corrected part number from “100B100JT500XT” to “0603HP - 5N1XJLW”; R1, R12: updated description from “510 Ω Chip Resistors” to “510 Ω, 1/10 W Chip Resistors”, p. 5 Description MW7IC008NT1 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MW7IC008NT1 Document Number: RF Device Data MW7IC008N Rev. 1, 9/2009 Freescale Semiconductor 13