MW7IC2220NBR1

Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 0, 9/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD - SCDMA. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 80 mA, IDQ2 = 300 mA, Pout = 2 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 31 dB Power Added Efficiency — 13% ACPR @ 5 MHz Offset — - 50 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 20 Watts CW Output Power • Typical Pout @ 1 dB Compression Point ' 20 Watts CW • Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 5 Watts CW Pout. Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering S - Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 2110 - 2170 MHz, 2 W Avg., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1886 - 01 TO - 270 WB - 16 PLASTIC MW7IC2220NR1 CASE 1887 - 01 TO - 270 WB - 16 GULL PLASTIC MW7IC2220GNR1 CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW7IC2220NBR1 VDS1 RFin RFout/VDS2 GND VDS1 NC NC NC RFin NC VGS1 VGS2 VDS1 GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND NC 14 RFout/VDS2 VGS1 VGS2 VDS1 Quiescent Current Temperature Compensation (1) 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2008. All rights reserved. MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Input Power Symbol VDSS VGS VDD Tstg TC TJ Pin Value - 0.5, +65 - 0.5, +5 32, +0 - 65 to +150 150 225 20 Unit Vdc Vdc Vdc °C °C °C dBm Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case 2 W Avg. (Pout = 2 W Avg., Case Temperature = 78°C) 20 W Avg. (Pout = 20 W Avg., Case Temperature = 82°C) Symbol RθJC Stage 1, 28 Vdc, IDQ1 = 80 mA Stage 2, 28 Vdc, IDQ2 = 300 mA Stage 1, 28 Vdc, IDQ1 = 80 mA Stage 2, 28 Vdc, IDQ2 = 300 mA 4.3 1.5 Value (2,3) Unit °C/W 4.3 1.25 Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Stage 1 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Stage 1 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 23 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 80 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 80 mAdc, Measured in Functional Test) VGS(th) VGS(Q) VGG(Q) 1.2 — 9.5 2 2.8 12.2 2.7 — 16.5 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. (continued) MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Stage 2 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Stage 2 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 300 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 300 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Stage 2 — Dynamic Characteristics (1) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 205 — pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 — 7 0.2 2 2.7 8 0.39 2.7 — 12.5 1.2 Vdc Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA, Pout = 2 W Avg., f1 = 2112.5 MHz and f2 = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Power Added Efficiency Adjacent Channel Power Ratio Input Return Loss Pout @ 1 dB Compression Point, CW IMD Symmetry @ 18 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 60 MHz Bandwidth @ Pout = 2 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 20 W CW Average Group Delay @ Pout = 20 W CW, f = 2140 MHz Part - to - Part Insertion Phase Variation @ Pout = 20 W CW, f = 2140 MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) 1. Part internally matched both on input and output. Gps PAE ACPR IRL P1dB IMDsym 29 11 — — — — 31 13 - 50 - 14 20 40 34 — - 47 - 12 — — dB % dBc dB W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA, 2110 - 2170 MHz VBWres GF Φ Delay ΔΦ ΔG ΔP1dB — — — — — — — 70 0.6 1.2 2.5 15 0.036 0.003 — — — — — — — MHz dB ° ns ° dB/°C dBm/°C MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 3 + C26 VDD2 VDD1 C9 RF INPUT C10 1 2 3 4 5 6 C1 C2 7 NC 8 9 10 11 NC C12 Quiescent Current Temperature Compensation Z14 13 12 C21 C22 C23 C24 C25 NC NC NC NC 14 Z5 DUT 16 15 Z13 C11 Z7 C13 Z9 RF OUTPUT C16 C17 C18 C19 C20 Z1 Z2 Z3 Z4 Z6 Z8 Z10 Z1 1 C15 C14 Z12 VGG1 R1 C3 VGG2 R2 C5 C4 Z1 Z2 Z3 Z4 Z5 Z6 Z7 C6 C7 C8 Microstrip Microstrip x 0.055″ Taper Microstrip Microstrip Microstrip Microstrip Z8 Z9 Z10 Z11 Z12 Z13, Z14 PCB 0.263″ x 0.123″ Microstrip 0.125″ x 0.123″ Microstrip 0.280″ x 0.083″ Microstrip 0.373″ x 0.083″ Microstrip 0.364″ x 0.083″ Microstrip 0.564″ x 0.083″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 0.090″ 2.107″ 0.016″ 0.106″ 0.570″ 0.204″ 0.050″ x 0.083″ x 0.083″ x 0.083″ x 0.055″ x 0.322″ x 0.322″ x 0.322″ Figure 3. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Schematic Table 6. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Designations and Values Part C1 C2, C3 C4 C5, C6 C7, C9 C8, C10 C11, C12 C13 C14 C15, C16, C21 C17, C22 C18, C23 C19, C24 C20, C25 C26 R1, R2 Description 0.1 pF Chip Capacitor 8.2 pF Chip Capacitors 4.7 μF, 50 V Chip Capacitor 0.4 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 5.6 pF Chip Capacitors 0.3 pF Chip Capacitors 0.8 pF Chip Capacitor 1.1 pF Chip Capacitor 9.1 pF Chip Capacitors 0.1 μF, 250 V Chip Capacitors 6.8 μF, 50 V Chip Capacitors 4.7 μF, 50 V Chip Capacitors 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitor 10 KΩ, 1/4 W Chip Resistors Part Number ATC100B0R1JT500XT ATC100B8R2BT500XT C4532X7R1H475KT ATC100B0R4JT500XT C3225Y5V1H106ZT ATC100B5R6JT500XT ATC100B0R3JT500XT ATC100B0R8JT500XT ATC100B1R1JT500XT ATC100B9R1JT500XT C3216X7R2E104KT C4532X7R1H685KT C4532X7R1H475KT C3225Y5V1H106ZT 477KXM063M CRCW12061002FKEA Manufacturer ATC ATC TDK ATC TDK ATC ATC ATC ATC ATC TDK TDK TDK TDK Illinois Vishay MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 4 RF Device Data Freescale Semiconductor C26 C16 C17 C9 C18 C19 C20 CUT OUT AREA C10 C11 C13 C12 C14 C23 C24 C15 C1 C5 MW7IC2220N Rev. 0 C6 VGG1 C2 R1 C3 R2 C4 C7 C8 C25 C21 C22 Figure 4. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Layout MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) 32.5 32.1 31.7 Gps, POWER GAIN (dB) 31.3 30.9 30.5 30.1 29.7 29.3 28.9 28.5 2060 ACPR IRL Gps 14 VDD = 28 Vdc, Pout = 2 W (Avg.), IDQ1 = 80 mA, IDQ2 = 300 mA 13 Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth 12 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ηD 11 10 PARC −44 −46 ACPR (dBc) −48 −50 −52 2100 2120 2140 2160 2180 2200 −54 2220 IRL, INPUT RETURN LOSS (dB) −14 −15 −16 −17 −18 −19 0 −0.2 −0.4 −0.6 −0.8 −1 PARC (dB) PARC (dB) 2080 f, FREQUENCY (MHz) Figure 5. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 2 Watts Avg. 33 32.5 32 Gps, POWER GAIN (dB) 31.5 31 30.5 ACPR 30 29.5 IRL Gps ηD VDD = 28 Vdc, Pout = 5 W (Avg.), IDQ1 = 80 mA IDQ2 = 300 mA, Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 22 21.5 21 20.5 20 −37 −38 −39 −40 −41 2080 2100 2120 2140 2160 2180 2200 −42 2220 ACPR (dBc) IRL, INPUT RETURN LOSS (dB) −10 −15 −20 −25 −30 −35 −0.2 −0.4 −0.6 −0.8 −1 −1.2 29 PARC 28.5 28 2060 f, FREQUENCY (MHz) Figure 6. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 5 Watts Avg. 33 IDQ2 = 450 mA 32 Gps, POWER GAIN (dB) 375 mA Gps, POWER GAIN (dB) 32 31 80 mA 30 60 mA 29 28 40 mA 27 26 1 10 Pout, OUTPUT POWER (WATTS) CW 50 1 10 Pout, OUTPUT POWER (WATTS) CW 50 VDD = 28 Vdc IDQ2 = 300 mA f = 2140 MHz 33 IDQ1 = 120 mA 100 mA 31 300 mA 30 29 28 27 26 VDD = 28 Vdc IDQ1 = 80 mA f = 2140 MHz 150 mA 225 mA Figure 7. Power Gain versus Output Power @ IDQ1 = 80 mA Figure 8. Power Gain versus Output Power @ IDQ2 = 300 mA MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 6 RF Device Data Freescale Semiconductor ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) −10 −20 −30 IM3−U IM3−L −40 −50 −60 −70 1 10 TWO−TONE SPACING (MHz) 100 IM5−L IM5−U IM7−L IM7−U VDD = 28 Vdc, Pout = 18 W (PEP), IDQ1 = 80 mA IDQ2 = 300 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz Figure 9. Intermodulation Distortion Products versus Tone Spacing 31.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 31 Gps, POWER GAIN (dB) 30.5 30 29.5 29 28.5 −25 −30 −35 −40 −45 −50 −55 ACPR (dBc) 1 0 Gps PARC 40 ηD, DRAIN EFFICIENCY (%) ACPR (dBc) 35 30 −1 −2 −3 −4 −5 2 ηD −1 dB = 6.36 W −3 dB = 12.7 W ACPR −2 dB = 9.45 W VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 4 6 8 10 12 14 25 20 15 10 Pout, OUTPUT POWER (WATTS) Figure 10. Output Peak - to - Average Ratio Compression (PARC) versus Output Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 45 40 35 30 25 20 15 10 5 0 1 25°C 85°C ACPR VDD = 28 Vdc, IDQ1 = 80 mA IDQ2 = 300 mA, f = 2140 MHz Single−Carrier W−CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 10 Pout, OUTPUT POWER (WATTS) AVG. 50 Gps TC = −30°C −15 −30°C ηD 25°C 85°C −20 25°C −25 −30°C −30 −35 −40 −45 −50 −55 −60 Figure 11. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 36 S21 30 −5 0 S21 (dB) S11 18 −15 12 6 1600 VDD = 28 Vdc IDQ1 = 80 mA, IDQ2 = 300 mA 1750 1900 2050 2200 2350 2500 2650 −20 −25 2800 f, FREQUENCY (MHz) Figure 12. Broadband Frequency Response W - CDMA TEST SIGNAL 100 10 −30 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 −50 −60 −70 −80 −90 −100 −110 −9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9 −ACPR in 3.84 MHz Integrated BW −ACPR in 3.84 MHz Integrated BW −40 −10 −20 3.84 MHz Channel BW PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal f, FREQUENCY (MHz) Figure 14. Single - Carrier W - CDMA Spectrum MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 8 RF Device Data Freescale Semiconductor S11 (dB) 24 −10 Zo = 50 Ω f = 2220 MHz f = 2220 MHz f = 2060 MHz f = 2060 MHz Zin Zload VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA, Pout = 2 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zin = Zin W 49.57 - j3.62 49.49 - j3.77 49.42 - j3.94 49.35 - j4.12 49.30 - j4.29 49.25 - j4.48 49.21 - j4.67 49.17 - j4.86 49.15 - j5.06 Zload W 11.06 - j3.26 10.83 - j2.96 10.55 - j2.62 10.30 - j2.23 10.08 - j1.86 9.86 - j1.51 9.65 - j1.13 9.45 - j0.76 9.25 - j0.40 Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground. Zload = Device Under Test Output Matching Network Z in Z load Figure 15. Series Equivalent Input and Load Impedance MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 9 Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 420 mA, TC = 25°C, 50 Ohm System) f MHz 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 S11 |S11| 0.452 0.407 0.354 0.316 0.279 0.222 0.140 0.046 0.094 0.238 0.254 0.241 0.252 0.201 0.174 0.148 0.135 0.197 0.244 0.291 0.340 0.391 0.435 0.475 0.455 0.535 0.571 0.598 0.623 0.643 0.668 0.681 0.694 0.712 0.724 0.726 0.705 0.743 0.748 0.753 ∠φ 134 117 96.5 85.1 68 49.5 30.4 21.9 135 56.4 - 29.2 - 84.1 - 120 - 142 - 162 168 103 35.4 1.73 - 11.1 - 19 - 26.9 - 35.2 - 44.4 - 46 - 60.2 - 71.2 - 82 - 92.9 - 102 - 109 - 116 - 121 - 124 - 127 - 130 - 130 - 132 - 135 - 137 |S21| 0.356 0.757 1.430 2.330 3.690 5.800 9.570 17.000 33.600 58.300 47.800 34.300 27.700 23.900 21.100 18.800 15.800 12.600 11.100 10.400 9.750 9.230 8.760 8.290 7.050 6.690 5.980 5.170 4.370 3.690 3.100 2.580 2.130 1.760 1.440 1.170 0.928 0.780 0.652 0.555 S21 ∠φ 7.81 - 7.8 - 31 - 52.1 - 73.6 - 93.3 - 113 - 137 - 173 124 59.5 22.9 - 3.98 - 28.2 - 51.8 - 75.9 - 100 - 118 - 132 - 147 - 163 - 179 164 146 129 112 95.1 78.5 63.1 48.7 35.4 22.7 11 - 0.057 - 10.9 - 21.1 - 28.7 - 37 - 44.3 - 50.3 |S12| 0.001 0.000 0.000 0.001 0.001 0.002 0.003 0.004 0.007 0.009 0.006 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.002 0.002 0.002 0.001 0.001 0.001 0.001 0.001 0.001 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.003 0.003 0.003 0.003 S12 ∠φ - 108 - 67.7 - 65.8 - 27.1 - 43.4 - 21.9 - 24.8 - 33.7 - 41.8 - 86.4 - 118 - 122 - 125 - 128 - 130 - 131 - 139 - 155 - 156 - 157 - 147 - 150 - 144 - 137 - 90.2 - 106 - 103 - 96.5 - 103 - 96.2 - 106 - 107 - 87.9 - 96.1 - 99.6 - 82.4 - 66.9 - 77.2 - 88 - 78.6 |S22| 0.979 0.969 0.955 0.935 0.909 0.878 0.833 0.737 0.476 0.396 0.873 0.927 0.911 0.891 0.878 0.872 0.882 0.906 0.919 0.926 0.933 0.938 0.942 0.945 0.950 0.955 0.955 0.954 0.955 0.954 0.951 0.952 0.957 0.959 0.959 0.962 0.963 0.959 0.955 0.955 S22 ∠φ 160 157 154 151 148 143 137 124 91.7 - 79.7 - 149 - 171 - 179 177 175 175 175 174 173 171 170 169 168 166 166 164 163 162 162 161 161 161 160 160 160 159 159 158 157 156 (continued) MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 10 RF Device Data Freescale Semiconductor Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 420 mA, TC = 25°C, 50 Ohm System) (continued) f MHz 3500 3550 3600 3650 3700 3750 3800 3850 3900 3950 4000 S11 |S11| 0.759 0.765 0.770 0.774 0.780 0.795 0.810 0.821 0.839 0.855 0.862 ∠φ - 140 - 144 - 148 - 153 - 159 - 164 - 170 - 175 - 178 179 176 |S21| 0.486 0.440 0.401 0.370 0.338 0.306 0.273 0.239 0.207 0.178 0.156 S21 ∠φ - 56.1 - 62.4 - 69.7 - 77.4 - 85.1 - 93.2 - 101 - 107 - 111 - 114 - 116 |S12| 0.004 0.004 0.004 0.005 0.006 0.006 0.008 0.008 0.008 0.008 0.008 S12 ∠φ - 81.1 - 82 - 85.9 - 96.4 - 94.9 - 99.3 - 110 - 113 - 112 - 117 - 123 |S22| 0.954 0.946 0.941 0.941 0.940 0.933 0.928 0.934 0.936 0.927 0.935 S22 ∠φ 155 154 153 151 150 148 146 145 144 144 144 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 11 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 51 Ideal 50 Pout, OUTPUT POWER (dBm) P3dB = 46.95 dBm (50 W) 49 48 47 VDD = 28 Vdc, IDQ1 = 90 mA 46 IDQ2 = 420 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle 45 f = 2110 MHz 44 7 8 9 10 11 12 13 14 15 16 17 18 19 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω P1dB 40.41 + j2.31 Zload Ω 3.13 - j4.89 Actual P1dB = 45.93 dBm (39 W) Pout, OUTPUT POWER (dBm) 52 51 50 49 48 47 46 45 44 43 42 41 40 7 8 9 10 11 P3dB = 48.06 dBm (64 W) P1dB = 46.99 dBm (50 W) Ideal Actual VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle f = 2170 MHz 12 13 14 15 16 17 18 19 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω P1dB 44.66 - j5.79 Zload Ω 3.06 - j5.22 Figure 16. Pulsed CW Output Power versus Input Power @ 28 V @ 2110 MHz Figure 17. Pulsed CW Output Power versus Input Power @ 28 V @ 2170 MHz MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 12 RF Device Data Freescale Semiconductor + C23 VDD2 VDD1 C9 RF INPUT C10 1 2 3 4 5 6 C12 C1 C2 7 NC 8 9 10 11 NC C11 Quiescent Current Temperature Compensation Z12 13 12 C18 C19 C20 C21 C22 NC NC NC NC 14 Z5 DUT 16 15 Z11 RF OUTPUT C13 C14 C15 C16 C17 Z1 Z2 Z3 Z4 Z6 Z7 Z8 Z9 Z10 VGG1 R1 C3 VGG2 R2 C5 C4 Z1 Z2 Z3 Z4 Z5 Z6 C6 C7 C8 Microstrip Microstrip x 0.055″ Taper Microstrip Microstrip Microstrip Z7 Z8 Z9 Z10 Z11, Z12 PCB 0.388″ x 0.123″ Microstrip 0.330″ x 0.083″ Microstrip 0.323″ x 0.083″ Microstrip 0.364″ x 0.083″ Microstrip 0.564″ x 0.083″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 0.090″ 2.107″ 0.016″ 0.106″ 0.570″ 0.254″ x 0.083″ x 0.083″ x 0.083″ x 0.055″ x 0.322″ x 0.322″ Figure 18. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Schematic — TD - SCDMA Table 8. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — TD - SCDMA Part C1 C2, C3 C4 C5, C6 C7, C9 C8, C10 C11 C12, C13, C18 C14, C19 C15, C20 C16, C21 C17, C22 C23 R1, R2 Description 1 pF Chip Capacitor 8.2 pF Chip Capacitors 4.7 μF, 50 V Chip Capacitor 0.4 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 5.6 pF Chip Capacitors 1.1 pF Chip Capacitor 9.1 pF Chip Capacitors 0.1 μF, 250 V Chip Capacitors 6.8 μF, 50 V Chip Capacitors 4.7 μF, 50 V Chip Capacitors 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitor 11 Ω, 1/4 W Chip Resistors Part Number ATC100B1R0JT500XT ATC100B8R2BT500XT C4532X7R1H475KT ATC100B0R4JT500XT C3225Y5V1H106ZT ATC100B5R6JT500XT ATC100B1R1JT500XT ATC100B9R1JT500XT C3216X7R2E104KT C4532X7R1H685KT C4532X7R1H475KT C3225Y5V1H106ZT 477KXM063M CRCW120611R0FKEA Manufacturer ATC ATC TDK ATC TDK ATC ATC ATC TDK TDK TDK TDK Illinois Vishay MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 13 C23 C13 C14 C9 C15 C16 C17 CUT OUT AREA C10 C1 C5 MW7IC2220N Rev. 0 C6 VGG1 C2 R1 C3 R2 C4 C7 C8 C12 C11 C20 C21 C22 C18 C19 Figure 19. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Layout — TD - SCDMA MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 14 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 0 −10 ALT/ACPR (dBc) −20 −30 Alt−U −40 −50 −60 0 2 4 6 8 10 Pout, OUTPUT POWER (WATTS) AVG. Alt−L 10 5 0 6−Carrier TD−SCDMA VD1 = VD2 = 28 V IDQ1 = 190 mA, IDQ2 = 300 mA f = 2017.5 MHz PAR = 7.7 dB 30 25 20 Adj−L Adj−U 15 ηD, DRAIN EFFICIENCY (%) ηD Figure 20. 6 - Carrier TD - SCDMA ACPR, ALT and Drain Efficiency versus Output Power TD - SCDMA TEST SIGNAL −30 −40 −50 −60 −70 (dBm) −80 −90 −100 −110 −120 −ALT1 in 1.28 MHz BW −1.6 MHz Offset 2.5 MHz f, FREQUENCY (MHz) +ALT1 in 1.28 MHz BW +1.6 MHz Offset Span 25 MHz −ALT2 in 1.28 MHz BW −3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset 1.28 MHz Channel BW VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz −130 Center 2.0175 GHz Figure 21. 6 - Carrier TD - SCDMA Spectrum MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 15 Zo = 50 Ω f = 1950 MHz Zin f = 2070 MHz f = 2070 MHz Zload f = 1950 MHz VDD = 28 Vdc, IDQ1 = 190 mA, IDQ2 = 300 mA f MHz 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 2050 2060 2070 Zin Zin W 50 + j0 50 + j0 50 + j0 50 + j0 50 + j0 50 + j0 50 + j0 50 + j0 50 + j0 50 + j0 50 + j0 50 + j0 50 + j0 Zload W 15.539 - j10.702 14.953 - j10.522 14.373 - j10.327 13.837 - j10.120 13.294 - j9.886 12.768 - j9.608 12.275 - j9.298 11.832 - j9.000 11.422 - j8.708 11.015 - j8.441 10.621 - j8.175 10.235 - j7.916 9.868 - j7.644 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Z in Z load Figure 22. Series Equivalent Input and Load Impedance — TD - SCDMA MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 16 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 17 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 18 RF Device Data Freescale Semiconductor MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 19 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 20 RF Device Data Freescale Semiconductor MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 21 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 22 RF Device Data Freescale Semiconductor MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 23 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 24 RF Device Data Freescale Semiconductor MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 25 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Sept. 2008 • Initial Release of Data Sheet Description MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 26 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 Document Number: RF Device Data MW7IC2220N Rev. 0, 9/2008 Freescale Semiconductor 27