MW7IC2725NR1_10

Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev. 3, 1/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N w ideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 28.5 dB Power Added Efficiency — 17% Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — -50 dBc in 1 MHz Channel Bandwidth Driver Applications • Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 27.8 dB Power Added Efficiency — 3.2% Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — -56 dBc in 1 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 40 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 5 W CW Pout • Typical Pout @ 1 dB Compression Point ] 25 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters • On-Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 2500-2700 MHz, 4 W AVG., 28 V WiMAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1886-01 TO-270 WB-16 PLASTIC MW7IC2725NR1 CASE 1887-01 TO-270 WB-16 GULL PLASTIC MW7IC2725GNR1 CASE 1329-09 TO-272 WB-16 PLASTIC MW7IC2725NBR1 GND VDS1 NC NC NC RFin 1 2 3 4 5 6 7 8 9 10 11 16 15 GND NC VDS1 RFin RFout/VDS2 14 RFout/VDS2 VGS1 VGS2 VDS1 Quiescent Current Temperature Compensation (1) NC VGS1 VGS2 VDS1 GND 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain-Source Voltage Gate-Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Input Power (1,2) Symbol VDS VGS VDD Tstg TC TJ Pin Value -0.5, +65 -0.5, +10 32, +0 -65 to +150 150 225 22 Unit Vdc Vdc Vdc °C °C °C dBm Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case WiMAX Application (Case Temperature 75°C, Pout = 4 W Avg.) CW Application (Case Temperature 81°C, Pout = 25 W CW) Stage 1, 28 Vdc, IDQ1 = 77 mA Stage 2, 28 Vdc, IDQ2 = 275 mA Stage 1, 28 Vdc, IDQ1 = 77 mA Stage 2, 28 Vdc, IDQ2 = 275 mA Symbol RθJC 5.9 1.4 5.5 1.3 Value (2,3) Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1B (Minimum) A (Minimum) II (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22-A113, IPC/JEDEC J-STD-020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Stage 1 - Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 - On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 77 mA) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test) VGS(th) VGS(Q) VGG(Q) 1.2 — 12.5 1.9 2.7 15.8 2.7 — 19.5 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued) MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Stage 2 - Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 - On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 80 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 275 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 275 mAdc, Measured in Functional Test) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 800 mAdc) Stage 2 - Dynamic Characteristics (1) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 111 — pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 — 11 0.15 1.9 2.7 14 0.47 2.7 — 18 0.8 Vdc Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps PAE PAR ACPR IRL 25.5 15 — — — 28.5 17 9 -50 -15 30.5 — — -46 -10 dB % dB dBc dB Typical Performances OFDM Signal - 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Relative Constellation Error (2) Error Vector Magnitude (2) RCE EVM — — -33 2.2 — — dB % rms (continued) 1. Part internally matched both on input and output. 2. RCE = 20Log(EVM/100) MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 3 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, 2500- 2700 MHz Bandwidth Pout @ 1 dB Compression Point, CW IMD Symmetry @ 27 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 200 MHz Bandwidth @ Pout = 4 W Avg. Average Deviation from Linear Phase in 200 MHz Bandwidth @ Pout = 25 W CW Average Group Delay @ Pout = 25 W CW, f = 2600 MHz Part-to-Part Insertion Phase Variation @ Pout = 25 W CW, f = 2600 MHz, Six Sigma Window Gain Variation over Temperature (-30 °C to +85°C) Output Power Variation over Temperature (-30 °C to +85°C) P1dB IMDsym — 50 — — 25 — W MHz VBWres GF Φ Delay ΔΦ ΔG ΔP1dB — — — — — — — 90 0.5 2.1 2.3 22 0.036 0.003 — — — — — — — MHz dB ° ns ° dB/°C dBm/°C Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Relative Constellation Error @ Pout = 1.25 W Avg. (1) 1. RCE = 20Log(EVM/100) Gps PAE PAR ACPR IRL RCE — — — — — — 27.8 3.2 9 -56 -13 -40 — — — — — — dB % dB dBc dB dB MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 4 RF Device Data Freescale Semiconductor VDD1 C17 C9 C8 VD2 C16 C15 B1 28 V C14 C7 1 2 3 4 5 Z1 Z2 Z3 C4 C5 C6 VG1 R4 VG2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.500″ x 0.027″ Microstrip 0.075″ x 0.127″ Microstrip 1.640″ x 0.027″ Microstrip 0.100″ x 0.042″ Microstrip 0.151″ x 0.268″ Microstrip 0.025″ x 0.268″ x 0.056″ Taper 0.050″ x 0.056″ Microstrip 0.356″ x 0.056″ Microstrip Z9 Z10 Z11 Z12 Z13* Z14 PCB 0.040″ x 0.061″ Microstrip 0.020″ x 0.050″ Microstrip 0.050″ x 0.050″ Microstrip 0.050″ x 0.027″ Microstrip 0.338″ x 0.020″ Microstrip 1.551″ x 0.027″ Microstrip Rogers R04350B, 0.0133″, εr = 3.48 R5 R6 C2 C3 C1 Z4 6 C11 7 NC 8 9 10 11 NC C10 Quiescent Current Temperature Compensation NC NC NC NC 14 Z5 Z6 Z7 Z8 Z9 Z10 Z11 DUT NC 16 NC 15 Z13 Z12 Z14 C13 C12 RF INPUT RF OUTPUT NC 13 NC 12 * Line length includes microstrip bends Figure 3. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Schematic Table 6. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Component Designations and Values Part B1 C1, C4, C7, C12, C15 C2, C5, C8, C13 C3, C6, C9, C14 C10 C11 C16, C17 R1, R4 R2, R3, R5, R6 Description 47 Ω, 100 MHz Short Ferrite Bead 6.8 pF Chip Capacitors 10 nF Chip Capacitors 1 μF, 50 V Chip Capacitors 2.4 pF Chip Capacitor 3.3 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 12 KΩ, 1/4 W Chip Resistors 1 KΩ, 1/4 W Chip Resistors Part Number 2743019447 ATC600S6R8CT250XT C0603C103J5RAC GRM32RR71H105KA01B ATC600S2R4BT250XT ATC600S3R3BT250XT GRM55DR61H106KA88B CRCW12061202FKEA CRCW12061001FKEA Manufacturer Fair-Rite ATC Kemet Murata ATC ATC Murata Vishay Vishay MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 5 MW7IC2725N Rev. 1.3 B1 C17 C8 C7 C4 C5 R4 R5 C1 R6 C9 C16 C15 C14 C13 CUT OUT AREA C12 C2 C10 C11 VG1 R1 VG2 R2 R3 C6 C3 Figure 4. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Component Layout MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 28.6 28.4 28.2 Gps, POWER GAIN (dB) 28 V = 28 Vdc, Pout = 4 W (Avg.), IDQ1 = 77 mA, IDQ2 = 275 mA 27.8 DD OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel 27.6 Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 27.4 27.2 ACPR 27 26.8 26.6 2500 IRL 2525 2550 2575 2600 2625 2650 2675 PARC Gps PAE 18 17 16 15 14 -53 -54 ACPR (dBc) -55 -56 -57 -58 2700 PAE, POWER ADDED EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) -16 -18 -20 -22 -24 -26 -0.2 -0.4 -0.6 -0.8 -1 -1.2 PARC (dB) PARC (dB) f, FREQUENCY (MHz) Figure 5. WiMAX Broadband Performance @ Pout = 4 Watts Avg. 28.6 28.4 28.2 Gps, POWER GAIN (dB) Gps PAE 3.5 3 2.5 2 1.5 -56 -57 -58 -59 -60 IRL 2525 2550 2575 2600 2625 2650 2675 -61 2700 ACPR (dBc) PAE, POWER ADDED EFFICIENCY (%) -10 -15 -20 -25 -30 -35 IRL, INPUT RETURN LOSS (dB) 28 VDD = 28 Vdc, Pout = 26 dBm (Avg.), IDQ1 = 77 mA, IDQ2 = 275 mA 27.8 OFDM 802.16d, 64 QAM 3/ , 4 Bursts, 10 MHz Channel Bandwidth 4 27.6 Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 27.4 27.2 27 26.8 26.6 2500 ACPR PARC -0.2 -0.4 -0.6 -0.8 -1 -1.2 f, FREQUENCY (MHz) Figure 6. WiMAX Broadband Performance @ Pout = 26 dBm Avg. 30 IDQ2 = 412 mA 29 Gps, POWER GAIN (dB) 28 27 26 25 24 23 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) CW 137 mA VDD = 28 Vdc IDQ1 = 77 mA f = 2600 MHz 344 mA 275 mA Gps, POWER GAIN (dB) 29 96 mA 28 27 58 mA 26 25 24 23 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) CW 39 mA 77 mA 30 IDQ1 = 103 mA 206 mA VDD = 28 Vdc IDQ2 = 275 mA f = 2600 MHz Figure 7. Power Gain versus Output Power @ IDQ1 = 77 mA Figure 8. Power Gain versus Output Power @ IDQ2 = 275 mA MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 0 -10 -20 -30 -40 -50 -60 1 10 TWO-T ONE SPACING (MHz) 100 IM3-U IM3-L IM5-L IM5-U IM7-L IM7-U VDD = 28 Vdc, Pout = 27 W (PEP), IDQ1 = 77 mA IDQ2 = 275 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2600 MHz Figure 9. Intermodulation Distortion Products versus Tone Spacing 29 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 28.5 Gps, POWER GAIN (dB) 28 27.5 27 26.5 26 1 0 -1 -2 -3 -4 -2 dB = 6.21 W -5 1 3 6 9 12 15 Pout, OUTPUT POWER (WATTS) -3 dB = 8.59 W PARC -1 dB = 4.01 W 35 PAE, POWER ADDED EFICIENCY (%) 30 25 20 15 10 5 -30 -35 -40 -45 -50 -55 -60 ACPR (dBc) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA f = 2600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% PAE Probability on CCDF ACPR Gps Figure 10. Output Peak-to-Average Ratio Compression (PARC) versus Output Power 45 PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. WiMAX 50 PAE ACPR TC = -40_C 25_C 85_C Gps VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA f = 2600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF -40 _C 25_C 85_C 85_C -15 -20 -25 -40 -45 -50 -55 -60 Figure 11. WiMAX, ACPR, Power Gain and Power Added Efficiency versus Output Power MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 8 RF Device Data Freescale Semiconductor ACPR (dBc) -30 25_C -40 _C -35 TYPICAL CHARACTERISTICS 25 S21 19 -10 MTTF (HOURS) 108 1st Stage S21 (dB) 13 -20 S11 (dB) 107 2nd Stage 106 105 0 109 7 S11 1 VDD = 28 Vdc IDQ1 = 77 mA, IDQ2 = 275 mA 2000 2200 2400 2600 2800 3000 3200 -30 -40 -5 1800 -50 3400 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 4 W Avg., and PAE = 17%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. f, FREQUENCY (MHz) Figure 12. Broadband Frequency Response Figure 13. MTTF versus Junction Temperature WIMAX TEST SIGNAL 100 10 Input Signal PROBABILITY (%) 1 0.1 (dB) -50 -60 -70 8 10 -80 -90 -20 ACPR in 1 MHz Integrated BW -15 -10 -5 0 ACPR in 1 MHz Integrated BW 5 10 15 20 0.01 0.001 0.0001 0 OFDM 802.16d, 64 QAM 3/4, 4 Bursts 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 2 4 6 -10 -20 -30 -40 10 MHz Channel BW PEAK-T O-A VERAGE (dB) Figure 14. OFDM 802.16d Test Signal f, FREQUENCY (MHz) Figure 15. WiMAX Spectrum Mask Specifications MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 9 Zo = 50 Ω f = 2700 MHz f = 2700 MHz Zload f = 2500 MHz Zsource f = 2500 MHz VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg. f MHz 2500 2525 2550 2575 2600 2625 2650 2675 2700 Zsource W 36.381 - j4.271 36.041 - j3.328 35.753 - j2.363 35.516 - j1.380 35.333 - j0.381 35.203 + j0.635 35.126 + j1.664 35.104 + j2.707 35.138 + j3.760 Zload W 5.717 - j3.618 5.624 - j3.187 5.578 - j2.770 5.589 - j2.412 5.586 - j2.088 5.579 - j1.807 5.552 - j1.559 5.564 - j1.335 5.568 - j1.164 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 10 RF Device Data Freescale Semiconductor Table 7. Common Source S-Parameters (VDD = 28 V, IDQ1 = 77 mA, IDQ2 = 275 mA, TC = 25°C, 50 Ohm System) f MHz 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 S11 |S11| 0.735 0.729 0.715 0.695 0.665 0.619 0.549 0.452 0.332 0.199 0.089 0.078 0.116 0.170 0.192 0.177 0.163 0.153 0.119 0.059 0.014 0.055 0.056 0.029 0.069 0.122 0.287 0.184 0.129 0.128 0.164 0.223 0.297 0.374 0.447 0.515 0.563 0.619 0.651 0.671 ∠φ 61.0 53.3 46.5 39.8 32.9 25.0 15.1 2.6 -14.4 -40.1 -91.9 167.4 90.3 -13.2 -93.2 -123.0 -132.6 -140.5 -153.6 -165.3 -50.7 -55.0 -84.7 177.4 103.3 84.1 59.8 -5.4 -17.4 -41.0 -65.7 -86.2 -100.4 -1 10.4 -1 18.0 -123.4 -128.0 -131.8 -136.0 -140.1 |S21| 0.001 0.004 0.014 0.039 0.110 0.299 0.708 1.335 2.195 3.445 5.724 10.041 19.072 32.642 31.339 26.174 23.605 22.427 21.922 21.172 20.172 19.222 17.366 14.562 12.199 10.485 8.086 7.102 6.753 6.107 5.445 4.867 4.363 3.918 3.534 3.198 2.951 2.761 2.581 2.418 S21 ∠φ -167.6 -146.0 -146.4 -152.5 -166.8 169.4 134.4 96.3 62.1 32.7 4.8 -26.2 -65.1 -126.0 171.3 130.3 98.7 70.0 41.7 14.2 -12.5 -39.5 -66.8 -91.5 -1 11.7 -130.4 -154.4 -152.5 -169.3 175.4 160.8 146.7 133.2 120.0 107.2 95.3 83.3 71.2 58.8 46.0 |S12| 0.000501 0.000361 0.000114 0.000385 0.000773 0.00134 0.00198 0.00250 0.00290 0.00320 0.00345 0.00382 0.00525 0.00781 0.00640 0.00432 0.00294 0.00224 0.00208 0.00216 0.00227 0.00213 0.00209 0.00247 0.00286 0.00308 0.00326 0.00292 0.00256 0.00232 0.00213 0.00196 0.00183 0.00176 0.00181 0.00191 0.00211 0.00206 0.00218 0.00237 S12 ∠φ 26.6 34.7 109.5 148.4 155.6 153.2 143.0 131.2 121.7 113.8 108.5 107.0 105.3 77.9 41.0 24.9 22.3 31.0 42.5 48.9 48.9 51.4 57.8 65.6 62.2 56.3 50.9 39.2 38.6 38.5 39.9 42.0 46.0 51.4 56.5 60.9 58.8 63.0 64.8 68.3 |S22| 0.992 0.993 0.991 0.992 0.989 0.979 0.944 0.903 0.879 0.847 0.817 0.749 0.571 0.054 0.555 0.726 0.770 0.789 0.800 0.820 0.850 0.889 0.933 0.961 0.968 0.969 0.969 0.966 0.969 0.970 0.972 0.972 0.973 0.974 0.974 0.975 0.975 0.976 0.975 0.975 S22 ∠φ 167.9 166.3 164.6 162.7 160.5 157.8 155.2 153.9 153.0 151.0 147.7 140.6 125.2 160.2 -144.4 -160.3 -167.1 -170.1 -171.0 -171.2 -171.3 -171.7 -173.2 -175.8 -178.0 -179.5 179.3 178.6 178.0 177.4 176.9 176.4 176.0 175.5 174.9 174.3 173.7 173.0 172.3 171.6 (continued) MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 11 Table 7. Common Source S-Parameters (VDD = 28 V, IDQ1 = 77 mA, IDQ2 = 275 mA, TC = 25°C, 50 Ohm System) (continued) f MHz 3500 3550 3600 3650 3700 3750 3800 3850 3900 3950 4000 S11 |S11| 0.679 0.677 0.661 0.696 0.721 0.737 0.753 0.771 0.788 0.812 0.829 ∠φ -144.4 -147.9 -153.5 -153.8 -161.3 -168.1 -174.7 179.2 174.4 169.8 166.0 |S21| 2.257 2.054 1.851 1.644 1.453 1.243 1.042 0.859 0.708 0.583 0.477 S21 ∠φ 32.6 19.2 5.0 -5.8 -19.4 -32.1 -43.7 -54.3 -62.8 -71.5 -79.0 |S12| 0.00265 0.00280 0.00281 0.00328 0.00350 0.00357 0.00374 0.00401 0.00407 0.00416 0.00427 S12 ∠φ 68.5 65.0 67.1 69.3 65.8 64.5 64.5 62.5 58.4 57.7 55.8 |S22| 0.974 0.976 0.976 0.976 0.977 0.978 0.979 0.980 0.980 0.981 0.982 S22 ∠φ 171.0 170.5 170.0 169.6 169.4 169.2 169.2 169.2 169.3 169.3 169.3 MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 12 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 50 P3dB = 45.73 dBm (36 W) 48 Pout, OUTPUT POWER (dBm) 46 44 42 40 38 36 34 34 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω P1dB 42.7 + j11.6 Zload Ω 4.86 - j1.63 P1dB VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle, f = 2500 MHz Pout, OUTPUT POWER (dBm) P1dB = 44.61 dBm (29 W) Actual Ideal 50 48 46 44 42 40 38 36 34 32 23456 78 9 10 11 12 13 14 15 16 17 18 19 20 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω 39.5 - j8.7 Zload Ω 3.53 - j1.66 VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle, f = 2700 MHz P3dB = 44.46 dBm (35 W) P1dB = 45.42 dBm (28 W) Actual Ideal Figure 17. Pulsed CW Output Power versus Input Power @ 28 V @ 2500 MHz Figure 18. Pulsed CW Output Power versus Input Power @ 28 V @ 2700 MHz MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 14 RF Device Data Freescale Semiconductor MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 15 MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 16 RF Device Data Freescale Semiconductor MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 17 MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 18 RF Device Data Freescale Semiconductor MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 19 MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 20 RF Device Data Freescale Semiconductor MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 21 MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 22 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 2 3 Date June 2008 July 2008 Oct. 2008 Jan. 2010 • Initial Release of Data Sheet • Added MW7IC2725NBR1 device and corresponding case outline information to data sheet. • Added Fig. 13, MTTF versus Junction Temperature, p. 9 • Modified VSWR rating to show the 3 dB overdrive capability, p. 1 • Maximum Ratings table: Added Case Operating Temperature and set limit to 150°C. Corrected maximum input power level to the tested value from 20 dBm to 22 dBm, p. 2 • Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to Product Documentation, Application Notes, p. 23 Description MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 RF Device Data Freescale Semiconductor 23 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008, 2010. All rights reserved. MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 Document Number: MW7IC2725N 2Rev. 3, 1/2010 4 RF Device Data Freescale Semiconductor