Freescale Semiconductor Technical Data
Document Number: MW7IC2750N Rev. 2, 2/2010
RF LDMOS Wideband Integrated Power Amplifiers
The MW7IC2750N w ideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 26 dB Power Added Efficiency — 17% Device Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — -49 dBc in 1 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 80 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 1 mW to 80 W CW Pout • Typical Pout @ 1 dB Compression Point ] 50 Watts CW Driver Applications • Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 26 dB Power Added Efficiency — 11% Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — -57 dBc in 1 MHz Channel Bandwidth Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters • On-Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • Greater Negative Gate-Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
2500-2700 MHz, 8 W AVG., 28 V WiMAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1618-02 TO-270 WB-14 PLASTIC MW7IC2750NR1
CASE 1621-02 TO-270 WB-14 GULL PLASTIC MW7IC2750GNR1
CASE 1617-02 TO-272 WB-14 PLASTIC MW7IC2750NBR1
VDS1 RFin RFout/VDS2
VGS1 VGS2
Quiescent Current Temperature Compensation (1)
VDS1 VGS2 VGS1 NC NC RFin RFin NC NC VGS1 VGS2 VDS1
1 2 3 4 5 6 7 8 9 10 11 12
14
RFout /VDS2
13
RFout /VDS2
(Top View) Note: Exposed backside of the package is the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain-Source Voltage Gate-Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Input Power
(1,2)
Symbol VDS VGS VDD Tstg TC TJ Pin
Value -0.5, +65 -6.0, +10 32, +0 -65 to +150 150 225 25
Unit Vdc Vdc Vdc °C °C °C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case CW Application (Case Temperature 80°C, Pout = 50 W CW) Final Application (Case Temperature 70°C, Pout = 8 W CW) Driver Application (Case Temperature 65°C, Pout = 4 W CW) Stage 1, 28 Vdc, IDQ1 = 160 mA Stage 2, 28 Vdc, IDQ2 = 550 mA Stage 1, 28 Vdc, IDQ1 = 160 mA Stage 2, 28 Vdc, IDQ2 = 550 mA Stage 1, 28 Vdc, IDQ1 = 160 mA Stage 2, 28 Vdc, IDQ2 = 550 mA Symbol RθJC 3.0 0.7 2.9 0.7 2.8 0.7 Value (2,3) Unit °C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1C (Minimum) A (Minimum) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Rating 3 Package Peak Temperature 260 Unit °C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic Stage 1 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Stage 1 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 46 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 160 mA, Measured in Functional Test) Stage 1 — Dynamic Characteristics (4) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 550 — pF VGS(th) VGS(Q) 1 3 2 3.8 3 4.5 Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 4. Part internally matched both on input and output. (continued)
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic Stage 2 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Stage 2 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 185 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 550 mA, Measured in Functional Test) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) Stage 2 — Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss — — 0.68 220 — — pF pF VGS(th) VGS(Q) VDS(on) 1 2.8 0.1 2 3.6 0.12 3 4.3 0.8 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps PAE PAR ACPR IRL 24 15 7.8 — — 26 17 8.6 -49 -12 31 — — -45 -10 dB % dB dBc dB
Typical Performances OFDM Signal — 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Relative Constellation Error (2) Error Vector Magnitude
(2)
RCE EVM
— —
-33 2.3
— —
dB % rms
Typical Performances OFDM Signal — 7 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Mask System Type G Point B at 3.5 MHz Offset Point C at 5 MHz Offset Point D at 7.4 MHz Offset Point E at 14 MHz Offset Point F at 17.5 MHz Offset Relative Constellation Error (2) Error Vector Magnitude
(2)
Mask — — — — — RCE EVM — — -27 -40 -43 -58 -63 -33 2.3 — — — — — — —
dBc
dB % rms
1. Part internally matched both on input and output. 2. RCE = 20Log(EVM/100) (continued)
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 3
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, 2700 MHz Bandwidth Pout @ 1 dB Compression Point, CW IMD Symmetry @ 50 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 200 MHz Bandwidth @ Pout = 8 W Avg. Average Deviation from Linear Phase in 200 MHz Bandwidth @ Pout = 50 W CW Average Group Delay @ Pout = 50 W CW, f = 2600 MHz Part-to-Part Insertion Phase Variation @ Pout = 50 W CW, f = 2600 MHz, Six Sigma Window Gain Variation over Temperature (-30 °C to +85°C) Output Power Variation over Temperature (-30 °C to +85°C) P1dB IMDsym — 60 — — 55 — W MHz
VBWres GF Φ Delay ΔΦ ΔG ΔP1dB
— — — — — — —
50 0.5 1.1 2.3 38.7 0.037 0.005
— — — — — — —
MHz dB ° ns ° dB/°C dBm/°C
Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Relative Constellation Error @ Pout = 2.5 W Avg. (1) 1. RCE = 20Log(EVM/100) Gps PAE PAR ACPR IRL RCE — — — — — — 26 11 9.2 -57 -13 -39 — — — — — — dB % dB dBc dB dB
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 4 RF Device Data Freescale Semiconductor
VDD2 VDD1 C2 C4 Z5 1 C6 2 NC 3 NC RF INPUT 4 NC 5 NC Z1 C1 VGG1 VGG2 R1 R2 Z4 Z2 Z3 6 7 8 NC 9 NC 10 11 12 C9 C3 C5 C7 C14 Quiescent Current Temperature Compensation 13 Z11 C11 14 Z6 Z7 C10 Z8 C12 Z9 C15 Z10 Z12 RF OUTPUT DUT C8 C13
Z1 Z2 Z3 Z4, Z5 Z6 Z7
0.662″ x 0.064″ Microstrip 1.530″ x 0.064″ Microstrip 0.126″ x 0.060″ Microstrip 0.771″ x 0.046″ Microstrip 0.192″ x 0.860″ Microstrip 0.280″ x 0.719″ Microstrip
Z8 Z9 Z10 Z11, Z12 PCB
0.417″ x 0.064″ Microstrip 1.137″ x 0.064″ Microstrip 0.293″ x 0.064″ Microstrip 0.615″ x 0.095″ Microstrip Rogers RO4350B, 0.030″, εr = 3.5
Figure 3. MW7IC2750NR1(GNR1)(NBR1) Test Circuit Schematic
Table 6. MW7IC2750NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part C1 C2, C3, C13, C14 C4, C5, C8, C9, C15 C6, C7 C10, C11 C12 R1, R2 Description 0.8 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 5.1 pF Chip Capacitors 1 μF, 100 V Chip Capacitors 0.2 pF Chip Capacitors 0.5 pF Chip Capacitor 1 KΩ, 1/4 W Chip Resistors Part Number ATC100B0R8BT500XT GRM55DR61H106KA88B ATC100B5R1CT500XT GRM32ER72A105KA01L ATC100B0R2BT500XT ATC100B0R5BT500XT CRCW12061001FKEA Manufacturer ATC Murata ATC Murata ATC ATC Vishay
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 5
C2
VG2
VD1 C4 C8 C10 C6 CUT OUT AREA C1 C12
C13
VG1
C15
MW7IC2750N Rev. 6
C7 C11 C14
VG1
R1 R2 VD1
C5
C9
VG2
C3
Figure 4. MW7IC2750NR1(GNR1)(NBR1) Test Circuit Component Layout
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
27 26.8 26.6 Gps, POWER GAIN (dB) 26.4 26.2 26 25.8 25.6 25.4 25.2 ACPR 25 2500 2525 2550 2575 2600 2625 2650 2675 VDD = 28 Vdc, Pout = 8 W (Avg.), IDQ1 = 160 mA IDQ2 = 550 mA, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF PARC IRL PAE Gps 19 18 17 16 15 -50 -51 ACPR (dBc) -52 -53 -54 -55 2700 PAE, POWER ADDED EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
-14 -16 -18 -20 -22 -24
-0.6 -0.8 -1 -1.2 -1.4 -1.6 PARC (dB) PARC (dB)
f, FREQUENCY (MHz)
Figure 5. WiMAX Broadband Performance @ Pout = 8 Watts Avg.
27 26.8 26.6 Gps, POWER GAIN (dB) 26.4 V = 28 Vdc, P = 4 W (Avg.), I DD out DQ1 = 160 mA 3 26.2 IDQ2 = 550 mA, OFDM 802.16d, 64 QAM /4, 4 Bursts 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB 26 @ 0.01% Probability on CCDF 25.8 25.6 25.4 25.2 IRL ACPR 2525 2550 2575 2600 2625 2650 2675 PARC PAE 12.5 11.5 10.5 9.5 8.5 -56 -57 -58 -59 -60 -61 2700 ACPR (dBc) PAE, POWER ADDED EFFICIENCY (%)
Gps
IRL, INPUT RETURN LOSS (dB) 10
-13 -15 -17 -19 -21 -23
0 -0.2 -0.4 -0.6 -0.8 -1
25 2500
f, FREQUENCY (MHz)
Figure 6. WiMAX Broadband Performance @ Pout = 4 Watts Avg.
29 IDQ2 = 826 mA 28 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 27 26 25 24 23 22 0.1 275 mA VDD = 28 Vdc IDQ1 = 160 mA f = 2600 MHz 1 10 100 412 mA 688 mA 550 mA 28 27 26 25 24 23 22 0.1 80 mA VDD = 28 Vdc IDQ2 = 550 mA f = 2600 MHz 1 100 120 mA 200 mA 160 mA 29 IDQ1 = 240 mA
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain versus Output Power @ IDQ1 = 160 mA
Figure 8. Power Gain versus Output Power @ IDQ2 = 550 mA
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) 0 -10 -20 IM3-U -30 IM3-L -40 -50 IM7-U -60 1 10 TWO-T ONE SPACING (MHz) 100 IM7-L IM5-L IM5-U VDD = 28 Vdc, Pout = 53 W (PEP), IDQ1 = 160 mA IDQ2 = 550 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2600 MHz
Figure 9. Intermodulation Distortion Products versus Tone Spacing
27.5 27 Gps, POWER GAIN (dB) 26.5 26 25.5 25 24.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 1 0 -1 -2 -3 -4 -5 5 VDD = 28 Vdc, IDQ1 = 160 mA IDQ2 = 550 mA, f = 2600 MHz, OFDM 802.16d 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 10 15 20 25 30 PARC -1 dB = 8.41 W -2 dB = 13.08 W -3 dB = 18.16 W 20 15 10 Gps ACPR PAE 30 25 40 PAE, POWER ADDED EFICIENCY (%) 35 -30 -35 -40 -45 -50 -55 -60 ACPR (dBc)
Pout, OUTPUT POWER (WATTS)
Figure 10. Output Peak-to-Average Ratio Compression (PARC) versus Output Power
45 PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. WiMAX 70 PAE ACPR -15 -20
VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA f = 2600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
25_C
-40 _C
25_C
85_C -25 -30 -35 ACPR (dBc)
TC = -40_C 25_C
85_C
Gps -40 _C
-40 -45 -50 -55 -60
Figure 11. WiMAX, ACPR, Power Gain and Power Added Efficiency versus Output Power
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 8 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
30 S21 20 0 10
S21 (dB)
10
-10 S11 (dB)
0 S11 -10 VDD = 28 Vdc IDQ1 = 160 mA, IDQ2 = 550 mA -20 1800 2000 2200 2400 2600 2800 3000 3200
-20
-30
-40 3400
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
109
108 MTTF (HOURS) 1st Stage 107 2nd Stage 106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 8 W Avg., and PAE = 17%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 13. MTTF versus Junction Temperature
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 9
WIMAX TEST SIGNAL
100 10 Input Signal PROBABILITY (%) 1 0.1 (dB) -50 -60 -70 8 10 -80 -90 -20 ACPR in 1 MHz Integrated BW -15 -10 -5 0 ACPR in 1 MHz Integrated BW 5 10 15 20 0.01 0.001 0.0001 0 OFDM 802.16d, 64 QAM 3/4, 4 Bursts 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 2 4 6 -10 -20 -30 -40 10 MHz Channel BW
PEAK-T O-A VERAGE (dB)
Figure 14. OFDM 802.16d Test Signal
f, FREQUENCY (MHz)
Figure 15. WiMAX Spectrum Mask Specifications
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 10 RF Device Data Freescale Semiconductor
Zo = 50 Ω f = 2500 MHz
f = 2700 MHz Zin
f = 2700 MHz Zload
f = 2500 MHz
VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 W Avg. f MHz 2500 2525 2550 2575 2600 2625 2650 2675 2700 Zin = Zin W 49.58 + j35.82 50.78 + j36.71 52.04 + j37.58 53.39 + j38.45 54.82 + j39.30 56.35 + j40.14 57.96 + j40.95 59.68 + j41.74 61.50 + j42.49 Zload W 3.52 - j1.79 3.46 - j1.82 3.37 - j1.86 3.24 - j1.88 3.09 - j1.87 2.94 - j1.84 2.77 - j1.77 2.60 - j1.66 2.44 - j1.56
Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground.
Zload =
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 16. Series Equivalent Source and Load Impedance MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 11
Table 7. Common Source S-Parameters (VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 550 mA, TC = 25°C, 50 Ohm System)
f MHz 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 S11 |S11| 0.754 0.734 0.716 0.697 0.677 0.651 0.619 0.578 0.527 0.462 0.392 0.312 0.218 0.139 0.426 0.490 0.416 0.352 0.321 0.274 0.233 0.178 0.123 0.108 0.121 0.146 0.184 0.214 0.261 0.316 0.372 0.430 0.485 0.534 0.585 0.625 0.657 0.686 ∠φ 78.5 70.1 61.7 53.4 45.1 36.6 27.6 17.7 5.6 -9.3 -27.8 -51.0 -74.1 -77.4 -69.8 -123.5 -146.4 -160.1 -166.6 -173.2 -177.6 179.0 -167.7 -148.8 -132.6 -1 19.9 -1 19.9 -121.0 -127.6 -134.0 -141.4 -150.2 -158.9 -166.3 -172.7 -178.0 177.3 173.2 |S21| 0.001 0.001 0.003 0.009 0.024 0.064 0.141 0.255 0.425 0.701 1.237 2.342 4.772 11.680 27.658 21.740 16.087 13.279 11.654 10.543 9.748 8.983 8.199 7.452 6.730 6.008 5.323 4.700 4.109 3.591 3.130 2.733 2.388 2.091 1.846 1.635 1.472 1.342 S21 ∠φ -17.9 -1 18.8 -1 16.5 -135.3 -152.3 -179.9 146.0 113.0 84.8 61.4 39.8 15.9 -1 1.8 -51.5 -129.7 150.4 106.5 71.6 41.9 13.4 -13.4 -40.5 -65.8 -89.9 -1 13.1 -135.3 -156.1 -175.6 166.0 149.0 133.3 118.1 103.6 90.1 77.3 65.2 52.9 40.8 |S12| 0.000774 0.000326 0.000392 0.000268 0.000211 0.000309 0.000599 0.000732 0.000734 0.000911 0.00154 0.00286 0.00377 0.00588 0.00919 0.00545 0.00314 0.00239 0.00175 0.00197 0.00181 0.00204 0.00218 0.00208 0.00198 0.00191 0.00211 0.00159 0.00205 0.00171 0.00103 0.00095 0.00103 0.00108 0.00127 0.00119 0.00132 0.00200 S12 ∠φ 17.4 85.4 58.7 27.8 -33.8 148.0 148.7 142.6 149.1 144.7 174.4 159.0 142.2 128.7 73.9 38.1 33.9 24.9 33.1 27.7 34.5 31.5 35.6 33.2 23.8 31.0 23.7 15.5 14.6 19.2 16.7 26.4 36.9 24.1 47.6 57.1 53.2 53.8 |S22| 0.994 0.993 0.998 0.997 0.996 0.991 0.981 0.970 0.957 0.941 0.924 0.895 0.843 0.691 0.342 0.800 0.864 0.879 0.891 0.908 0.924 0.943 0.957 0.970 0.978 0.985 0.987 0.987 0.985 0.984 0.984 0.984 0.984 0.985 0.984 0.986 0.985 0.985 S22 ∠φ 174.5 175.3 174.6 173.9 172.9 171.7 170.3 169.0 167.3 165.6 163.6 160.9 156.6 149.4 -169.4 -166.9 -174.9 -177.0 -177.5 -177.4 -177.5 -177.7 -178.0 -178.7 -179.6 179.4 178.3 177.3 176.3 175.4 174.5 173.8 173.2 172.7 172.4 172.1 171.9 171.7 (continued)
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 12 RF Device Data Freescale Semiconductor
Table 7. Common Source S-Parameters (VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 550 mA, TC = 25°C, 50 Ohm System) (continued)
f MHz 3400 3450 3500 3550 3600 S11 |S11| 0.702 0.718 0.721 0.746 0.758 ∠φ 169.7 166.7 164.7 162.0 158.9 |S21| 1.243 1.193 0.937 0.914 0.857 S21 ∠φ 28.4 10.8 3.1 -7.9 -21.4 |S12| 0.00230 0.00211 0.00233 0.00213 0.00236 S12 ∠φ 54.4 62.5 24.3 51.7 55.6 |S22| 0.982 0.947 0.976 0.981 0.978 S22 ∠φ 171.3 170.1 173.0 171.9 171.1
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 13
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 P3dB = 49.27 dBm (85 W) P1dB = 48.21 dBm (66 W) Actual Ideal Pout, OUTPUT POWER (dBm) 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 P3dB = 48.62 dBm (73 W) P1dB = 47.59 dBm (57 W) Actual Ideal
Pout, OUTPUT POWER (dBm)
VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle, f = 2500 MHz 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle, f = 2700 MHz 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω P1dB 36.24 + j1.75 Zload Ω 1.19 - j1.29
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω P1dB 28.46 + j5.15 Zload Ω 1.67 - j1.53
Figure 17. Pulsed CW Output Power versus Input Power @ 28 V @ 2500 MHz
Figure 18. Pulsed CW Output Power versus Input Power @ 28 V @ 2700 MHz
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date May 2008 Oct. 2008 • Initial Release of Data Sheet • Corrected footnote reference in Typical Performances OFDM Signal - 10 MHz Bandwidth table, p. 3 • Updated Fig. 13, MTTF versus Junction Temperature, to correct a calculation error, p. 9 2 Feb. 2010 • Modified VSWR rating to show the 3 dB overdrive capability, p. 1 • Corrected maximum input power level to the tested value, from 13 dBm to 25 dBm in Maximum Ratings table, p. 2 • Fig. 3, Test Circuit Schematic, corrected Rogers RO4350B dielectric constant from 3.66 εr to 3.5 εr, p. 5 • Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to Product Documentation, Application Notes, p. 24 Description
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