0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MW7IC2750NR1

MW7IC2750NR1

  • 厂商:

    FREESCALE(飞思卡尔)

  • 封装:

  • 描述:

    MW7IC2750NR1 - RF LDMOS Wideband Integrated Power Amplifiers - Freescale Semiconductor, Inc

  • 数据手册
  • 价格&库存
MW7IC2750NR1 数据手册
Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 2, 2/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N w ideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 26 dB Power Added Efficiency — 17% Device Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — -49 dBc in 1 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 80 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 1 mW to 80 W CW Pout • Typical Pout @ 1 dB Compression Point ] 50 Watts CW Driver Applications • Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 26 dB Power Added Efficiency — 11% Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — -57 dBc in 1 MHz Channel Bandwidth Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters • On-Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • Greater Negative Gate-Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 2500-2700 MHz, 8 W AVG., 28 V WiMAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1618-02 TO-270 WB-14 PLASTIC MW7IC2750NR1 CASE 1621-02 TO-270 WB-14 GULL PLASTIC MW7IC2750GNR1 CASE 1617-02 TO-272 WB-14 PLASTIC MW7IC2750NBR1 VDS1 RFin RFout/VDS2 VGS1 VGS2 Quiescent Current Temperature Compensation (1) VDS1 VGS2 VGS1 NC NC RFin RFin NC NC VGS1 VGS2 VDS1 1 2 3 4 5 6 7 8 9 10 11 12 14 RFout /VDS2 13 RFout /VDS2 (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain-Source Voltage Gate-Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Input Power (1,2) Symbol VDS VGS VDD Tstg TC TJ Pin Value -0.5, +65 -6.0, +10 32, +0 -65 to +150 150 225 25 Unit Vdc Vdc Vdc °C °C °C dBm Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case CW Application (Case Temperature 80°C, Pout = 50 W CW) Final Application (Case Temperature 70°C, Pout = 8 W CW) Driver Application (Case Temperature 65°C, Pout = 4 W CW) Stage 1, 28 Vdc, IDQ1 = 160 mA Stage 2, 28 Vdc, IDQ2 = 550 mA Stage 1, 28 Vdc, IDQ1 = 160 mA Stage 2, 28 Vdc, IDQ2 = 550 mA Stage 1, 28 Vdc, IDQ1 = 160 mA Stage 2, 28 Vdc, IDQ2 = 550 mA Symbol RθJC 3.0 0.7 2.9 0.7 2.8 0.7 Value (2,3) Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Stage 1 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Stage 1 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 46 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 160 mA, Measured in Functional Test) Stage 1 — Dynamic Characteristics (4) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 550 — pF VGS(th) VGS(Q) 1 3 2 3.8 3 4.5 Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 4. Part internally matched both on input and output. (continued) MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Stage 2 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Stage 2 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 185 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 550 mA, Measured in Functional Test) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) Stage 2 — Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss — — 0.68 220 — — pF pF VGS(th) VGS(Q) VDS(on) 1 2.8 0.1 2 3.6 0.12 3 4.3 0.8 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps PAE PAR ACPR IRL 24 15 7.8 — — 26 17 8.6 -49 -12 31 — — -45 -10 dB % dB dBc dB Typical Performances OFDM Signal — 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Relative Constellation Error (2) Error Vector Magnitude (2) RCE EVM — — -33 2.3 — — dB % rms Typical Performances OFDM Signal — 7 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Mask System Type G Point B at 3.5 MHz Offset Point C at 5 MHz Offset Point D at 7.4 MHz Offset Point E at 14 MHz Offset Point F at 17.5 MHz Offset Relative Constellation Error (2) Error Vector Magnitude (2) Mask — — — — — RCE EVM — — -27 -40 -43 -58 -63 -33 2.3 — — — — — — — dBc dB % rms 1. Part internally matched both on input and output. 2. RCE = 20Log(EVM/100) (continued) MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 3 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, 2700 MHz Bandwidth Pout @ 1 dB Compression Point, CW IMD Symmetry @ 50 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 200 MHz Bandwidth @ Pout = 8 W Avg. Average Deviation from Linear Phase in 200 MHz Bandwidth @ Pout = 50 W CW Average Group Delay @ Pout = 50 W CW, f = 2600 MHz Part-to-Part Insertion Phase Variation @ Pout = 50 W CW, f = 2600 MHz, Six Sigma Window Gain Variation over Temperature (-30 °C to +85°C) Output Power Variation over Temperature (-30 °C to +85°C) P1dB IMDsym — 60 — — 55 — W MHz VBWres GF Φ Delay ΔΦ ΔG ΔP1dB — — — — — — — 50 0.5 1.1 2.3 38.7 0.037 0.005 — — — — — — — MHz dB ° ns ° dB/°C dBm/°C Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Relative Constellation Error @ Pout = 2.5 W Avg. (1) 1. RCE = 20Log(EVM/100) Gps PAE PAR ACPR IRL RCE — — — — — — 26 11 9.2 -57 -13 -39 — — — — — — dB % dB dBc dB dB MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 4 RF Device Data Freescale Semiconductor VDD2 VDD1 C2 C4 Z5 1 C6 2 NC 3 NC RF INPUT 4 NC 5 NC Z1 C1 VGG1 VGG2 R1 R2 Z4 Z2 Z3 6 7 8 NC 9 NC 10 11 12 C9 C3 C5 C7 C14 Quiescent Current Temperature Compensation 13 Z11 C11 14 Z6 Z7 C10 Z8 C12 Z9 C15 Z10 Z12 RF OUTPUT DUT C8 C13 Z1 Z2 Z3 Z4, Z5 Z6 Z7 0.662″ x 0.064″ Microstrip 1.530″ x 0.064″ Microstrip 0.126″ x 0.060″ Microstrip 0.771″ x 0.046″ Microstrip 0.192″ x 0.860″ Microstrip 0.280″ x 0.719″ Microstrip Z8 Z9 Z10 Z11, Z12 PCB 0.417″ x 0.064″ Microstrip 1.137″ x 0.064″ Microstrip 0.293″ x 0.064″ Microstrip 0.615″ x 0.095″ Microstrip Rogers RO4350B, 0.030″, εr = 3.5 Figure 3. MW7IC2750NR1(GNR1)(NBR1) Test Circuit Schematic Table 6. MW7IC2750NR1(GNR1)(NBR1) Test Circuit Component Designations and Values Part C1 C2, C3, C13, C14 C4, C5, C8, C9, C15 C6, C7 C10, C11 C12 R1, R2 Description 0.8 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 5.1 pF Chip Capacitors 1 μF, 100 V Chip Capacitors 0.2 pF Chip Capacitors 0.5 pF Chip Capacitor 1 KΩ, 1/4 W Chip Resistors Part Number ATC100B0R8BT500XT GRM55DR61H106KA88B ATC100B5R1CT500XT GRM32ER72A105KA01L ATC100B0R2BT500XT ATC100B0R5BT500XT CRCW12061001FKEA Manufacturer ATC Murata ATC Murata ATC ATC Vishay MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 5 C2 VG2 VD1 C4 C8 C10 C6 CUT OUT AREA C1 C12 C13 VG1 C15 MW7IC2750N Rev. 6 C7 C11 C14 VG1 R1 R2 VD1 C5 C9 VG2 C3 Figure 4. MW7IC2750NR1(GNR1)(NBR1) Test Circuit Component Layout MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 27 26.8 26.6 Gps, POWER GAIN (dB) 26.4 26.2 26 25.8 25.6 25.4 25.2 ACPR 25 2500 2525 2550 2575 2600 2625 2650 2675 VDD = 28 Vdc, Pout = 8 W (Avg.), IDQ1 = 160 mA IDQ2 = 550 mA, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF PARC IRL PAE Gps 19 18 17 16 15 -50 -51 ACPR (dBc) -52 -53 -54 -55 2700 PAE, POWER ADDED EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) -14 -16 -18 -20 -22 -24 -0.6 -0.8 -1 -1.2 -1.4 -1.6 PARC (dB) PARC (dB) f, FREQUENCY (MHz) Figure 5. WiMAX Broadband Performance @ Pout = 8 Watts Avg. 27 26.8 26.6 Gps, POWER GAIN (dB) 26.4 V = 28 Vdc, P = 4 W (Avg.), I DD out DQ1 = 160 mA 3 26.2 IDQ2 = 550 mA, OFDM 802.16d, 64 QAM /4, 4 Bursts 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB 26 @ 0.01% Probability on CCDF 25.8 25.6 25.4 25.2 IRL ACPR 2525 2550 2575 2600 2625 2650 2675 PARC PAE 12.5 11.5 10.5 9.5 8.5 -56 -57 -58 -59 -60 -61 2700 ACPR (dBc) PAE, POWER ADDED EFFICIENCY (%) Gps IRL, INPUT RETURN LOSS (dB) 10 -13 -15 -17 -19 -21 -23 0 -0.2 -0.4 -0.6 -0.8 -1 25 2500 f, FREQUENCY (MHz) Figure 6. WiMAX Broadband Performance @ Pout = 4 Watts Avg. 29 IDQ2 = 826 mA 28 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 27 26 25 24 23 22 0.1 275 mA VDD = 28 Vdc IDQ1 = 160 mA f = 2600 MHz 1 10 100 412 mA 688 mA 550 mA 28 27 26 25 24 23 22 0.1 80 mA VDD = 28 Vdc IDQ2 = 550 mA f = 2600 MHz 1 100 120 mA 200 mA 160 mA 29 IDQ1 = 240 mA Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 7. Power Gain versus Output Power @ IDQ1 = 160 mA Figure 8. Power Gain versus Output Power @ IDQ2 = 550 mA MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 0 -10 -20 IM3-U -30 IM3-L -40 -50 IM7-U -60 1 10 TWO-T ONE SPACING (MHz) 100 IM7-L IM5-L IM5-U VDD = 28 Vdc, Pout = 53 W (PEP), IDQ1 = 160 mA IDQ2 = 550 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2600 MHz Figure 9. Intermodulation Distortion Products versus Tone Spacing 27.5 27 Gps, POWER GAIN (dB) 26.5 26 25.5 25 24.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 1 0 -1 -2 -3 -4 -5 5 VDD = 28 Vdc, IDQ1 = 160 mA IDQ2 = 550 mA, f = 2600 MHz, OFDM 802.16d 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 10 15 20 25 30 PARC -1 dB = 8.41 W -2 dB = 13.08 W -3 dB = 18.16 W 20 15 10 Gps ACPR PAE 30 25 40 PAE, POWER ADDED EFICIENCY (%) 35 -30 -35 -40 -45 -50 -55 -60 ACPR (dBc) Pout, OUTPUT POWER (WATTS) Figure 10. Output Peak-to-Average Ratio Compression (PARC) versus Output Power 45 PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. WiMAX 70 PAE ACPR -15 -20 VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA f = 2600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 25_C -40 _C 25_C 85_C -25 -30 -35 ACPR (dBc) TC = -40_C 25_C 85_C Gps -40 _C -40 -45 -50 -55 -60 Figure 11. WiMAX, ACPR, Power Gain and Power Added Efficiency versus Output Power MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 8 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 30 S21 20 0 10 S21 (dB) 10 -10 S11 (dB) 0 S11 -10 VDD = 28 Vdc IDQ1 = 160 mA, IDQ2 = 550 mA -20 1800 2000 2200 2400 2600 2800 3000 3200 -20 -30 -40 3400 f, FREQUENCY (MHz) Figure 12. Broadband Frequency Response 109 108 MTTF (HOURS) 1st Stage 107 2nd Stage 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 8 W Avg., and PAE = 17%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 9 WIMAX TEST SIGNAL 100 10 Input Signal PROBABILITY (%) 1 0.1 (dB) -50 -60 -70 8 10 -80 -90 -20 ACPR in 1 MHz Integrated BW -15 -10 -5 0 ACPR in 1 MHz Integrated BW 5 10 15 20 0.01 0.001 0.0001 0 OFDM 802.16d, 64 QAM 3/4, 4 Bursts 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 2 4 6 -10 -20 -30 -40 10 MHz Channel BW PEAK-T O-A VERAGE (dB) Figure 14. OFDM 802.16d Test Signal f, FREQUENCY (MHz) Figure 15. WiMAX Spectrum Mask Specifications MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 10 RF Device Data Freescale Semiconductor Zo = 50 Ω f = 2500 MHz f = 2700 MHz Zin f = 2700 MHz Zload f = 2500 MHz VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 W Avg. f MHz 2500 2525 2550 2575 2600 2625 2650 2675 2700 Zin = Zin W 49.58 + j35.82 50.78 + j36.71 52.04 + j37.58 53.39 + j38.45 54.82 + j39.30 56.35 + j40.14 57.96 + j40.95 59.68 + j41.74 61.50 + j42.49 Zload W 3.52 - j1.79 3.46 - j1.82 3.37 - j1.86 3.24 - j1.88 3.09 - j1.87 2.94 - j1.84 2.77 - j1.77 2.60 - j1.66 2.44 - j1.56 Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground. Zload = Device Under Test Output Matching Network Z in Z load Figure 16. Series Equivalent Source and Load Impedance MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 11 Table 7. Common Source S-Parameters (VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 550 mA, TC = 25°C, 50 Ohm System) f MHz 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 S11 |S11| 0.754 0.734 0.716 0.697 0.677 0.651 0.619 0.578 0.527 0.462 0.392 0.312 0.218 0.139 0.426 0.490 0.416 0.352 0.321 0.274 0.233 0.178 0.123 0.108 0.121 0.146 0.184 0.214 0.261 0.316 0.372 0.430 0.485 0.534 0.585 0.625 0.657 0.686 ∠φ 78.5 70.1 61.7 53.4 45.1 36.6 27.6 17.7 5.6 -9.3 -27.8 -51.0 -74.1 -77.4 -69.8 -123.5 -146.4 -160.1 -166.6 -173.2 -177.6 179.0 -167.7 -148.8 -132.6 -1 19.9 -1 19.9 -121.0 -127.6 -134.0 -141.4 -150.2 -158.9 -166.3 -172.7 -178.0 177.3 173.2 |S21| 0.001 0.001 0.003 0.009 0.024 0.064 0.141 0.255 0.425 0.701 1.237 2.342 4.772 11.680 27.658 21.740 16.087 13.279 11.654 10.543 9.748 8.983 8.199 7.452 6.730 6.008 5.323 4.700 4.109 3.591 3.130 2.733 2.388 2.091 1.846 1.635 1.472 1.342 S21 ∠φ -17.9 -1 18.8 -1 16.5 -135.3 -152.3 -179.9 146.0 113.0 84.8 61.4 39.8 15.9 -1 1.8 -51.5 -129.7 150.4 106.5 71.6 41.9 13.4 -13.4 -40.5 -65.8 -89.9 -1 13.1 -135.3 -156.1 -175.6 166.0 149.0 133.3 118.1 103.6 90.1 77.3 65.2 52.9 40.8 |S12| 0.000774 0.000326 0.000392 0.000268 0.000211 0.000309 0.000599 0.000732 0.000734 0.000911 0.00154 0.00286 0.00377 0.00588 0.00919 0.00545 0.00314 0.00239 0.00175 0.00197 0.00181 0.00204 0.00218 0.00208 0.00198 0.00191 0.00211 0.00159 0.00205 0.00171 0.00103 0.00095 0.00103 0.00108 0.00127 0.00119 0.00132 0.00200 S12 ∠φ 17.4 85.4 58.7 27.8 -33.8 148.0 148.7 142.6 149.1 144.7 174.4 159.0 142.2 128.7 73.9 38.1 33.9 24.9 33.1 27.7 34.5 31.5 35.6 33.2 23.8 31.0 23.7 15.5 14.6 19.2 16.7 26.4 36.9 24.1 47.6 57.1 53.2 53.8 |S22| 0.994 0.993 0.998 0.997 0.996 0.991 0.981 0.970 0.957 0.941 0.924 0.895 0.843 0.691 0.342 0.800 0.864 0.879 0.891 0.908 0.924 0.943 0.957 0.970 0.978 0.985 0.987 0.987 0.985 0.984 0.984 0.984 0.984 0.985 0.984 0.986 0.985 0.985 S22 ∠φ 174.5 175.3 174.6 173.9 172.9 171.7 170.3 169.0 167.3 165.6 163.6 160.9 156.6 149.4 -169.4 -166.9 -174.9 -177.0 -177.5 -177.4 -177.5 -177.7 -178.0 -178.7 -179.6 179.4 178.3 177.3 176.3 175.4 174.5 173.8 173.2 172.7 172.4 172.1 171.9 171.7 (continued) MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 12 RF Device Data Freescale Semiconductor Table 7. Common Source S-Parameters (VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 550 mA, TC = 25°C, 50 Ohm System) (continued) f MHz 3400 3450 3500 3550 3600 S11 |S11| 0.702 0.718 0.721 0.746 0.758 ∠φ 169.7 166.7 164.7 162.0 158.9 |S21| 1.243 1.193 0.937 0.914 0.857 S21 ∠φ 28.4 10.8 3.1 -7.9 -21.4 |S12| 0.00230 0.00211 0.00233 0.00213 0.00236 S12 ∠φ 54.4 62.5 24.3 51.7 55.6 |S22| 0.982 0.947 0.976 0.981 0.978 S22 ∠φ 171.3 170.1 173.0 171.9 171.1 MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 13 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 P3dB = 49.27 dBm (85 W) P1dB = 48.21 dBm (66 W) Actual Ideal Pout, OUTPUT POWER (dBm) 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 P3dB = 48.62 dBm (73 W) P1dB = 47.59 dBm (57 W) Actual Ideal Pout, OUTPUT POWER (dBm) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle, f = 2500 MHz 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle, f = 2700 MHz 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω P1dB 36.24 + j1.75 Zload Ω 1.19 - j1.29 NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω P1dB 28.46 + j5.15 Zload Ω 1.67 - j1.53 Figure 17. Pulsed CW Output Power versus Input Power @ 28 V @ 2500 MHz Figure 18. Pulsed CW Output Power versus Input Power @ 28 V @ 2700 MHz MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 14 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 15 MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 16 RF Device Data Freescale Semiconductor MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 17 MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 18 RF Device Data Freescale Semiconductor MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 19 MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 20 RF Device Data Freescale Semiconductor MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 21 MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 22 RF Device Data Freescale Semiconductor MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 RF Device Data Freescale Semiconductor 23 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date May 2008 Oct. 2008 • Initial Release of Data Sheet • Corrected footnote reference in Typical Performances OFDM Signal - 10 MHz Bandwidth table, p. 3 • Updated Fig. 13, MTTF versus Junction Temperature, to correct a calculation error, p. 9 2 Feb. 2010 • Modified VSWR rating to show the 3 dB overdrive capability, p. 1 • Corrected maximum input power level to the tested value, from 13 dBm to 25 dBm in Maximum Ratings table, p. 2 • Fig. 3, Test Circuit Schematic, corrected Rogers RO4350B dielectric constant from 3.66 εr to 3.5 εr, p. 5 • Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to Product Documentation, Application Notes, p. 24 Description MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 24 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1-800-441-2447 or +1-303-675-2140 Fax: +1-303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008, 2010. All rights reserved. MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1 Document Number: RF Device Data MW7IC2750N Rev. 2, 2/2010 Freescale Semiconductor 25
MW7IC2750NR1 价格&库存

很抱歉,暂时无法提供与“MW7IC2750NR1”相匹配的价格&库存,您可以联系我们找货

免费人工找货