MW7IC3825NR1

Freescale Semiconductor Technical Data Document Number: MW7IC3825N Rev. 1, 11/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC3825N wideband integrated circuit is designed with on--chip matching that makes it usable from 3400 -- 3600 MHz. This multi -- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 130 mA, IDQ2 = 230 mA, Pout = 5 Watts Avg., f = 3600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 25 dB Power Added Efficiency — 15% Device Output Signal PAR — 8.5 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — --48 dBc in 1 MHz Channel Bandwidth Driver Applications • Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 190 mA, IDQ2 = 230 mA, Pout = 0.5 Watts Avg., f = 3400 and 3600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 23.5 dB Power Added Efficiency — 3.5% Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — --55 dBc in 1 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 25 Watts CW Output Power • Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 0 to 44 dBm CW Pout • Typical Pout @ 1 dB Compression Point ≃ 30 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • On--Chip Matching (50 Ohm Input, RF Choke to Ground) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 3400-3600 MHz, 5 W AVG., 28 V WiMAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1886-01 TO-270 WB-16 PLASTIC MW7IC3825NR1 CASE 1887-01 TO-270 WB-16 GULL PLASTIC MW7IC3825GNR1 CASE 1329-09 TO-272 WB-16 PLASTIC MW7IC3825NBR1 VDS1 RFin RFout/VDS2 GND VDS1 VGS2 VGS1 NC RFin NC VGS1 VGS2 VDS1 GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND NC 14 RFout/VDS2 VGS1 VGS2 13 12 Quiescent Current Temperature Compensation (1) NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes -- AN1977 or AN1987. © Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Input Power Symbol VDS VGS VDD Tstg TC TJ Pin Characteristic Thermal Resistance, Junction to Case WiMAX Application (Case Temperature 71°C, Pout = 5 W CW) Stage 1, 28 Vdc, IDQ1 = 130 mA Stage 2, 28 Vdc, IDQ2 = 230 mA Symbol RθJC 4.7 1.3 Value --0.5, +65 --6.0, +10 32, +0 -- 65 to +150 150 225 45 Value (2,3) Unit Vdc Vdc Vdc °C °C °C dBm Table 2. Thermal Characteristics Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1B (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Stage 1 - Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 - On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 25 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 130 mA) Fixture Gate Quiescent Voltage (4) (VDD = 28 Vdc, IDQ1 = 130 mA, Measured in Functional Test) VGS(th) VGS(Q) VGG(Q) 1.2 — 3.5 2 2.7 4.2 2.7 — 5 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. VGG = 1.55 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. (continued) MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Stage 2 - Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 - On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 120 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 230 mA) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, IDQ2 = 230 mA, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) Stage 2 - Dynamic Characteristics (2) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 72.3 — pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 — 2.5 0.2 2 2.7 3.3 0.5 2.7 — 4 1.2 Vdc Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA, Pout = 5 W Avg., f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps PAE PAR ACPR IRL 21 12 7.5 — — 25 15 8.5 --48 --12 32 — — --45 --6 dB % dB dBc dB Typical Performances OFDM Signal - 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA, Pout = 5 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Relative Constellation Error (4) Error Vector Magnitude (4) RCE EVM — — --33 2.2 — — dB % rms 1. VGG = 1.22 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. 4. RCE = 20Log(EVM/100). (continued) MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 3 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 2 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 200 MHz Bandwidth @ Pout = 5 W Avg. Average Deviation from Linear Phase in 200 MHz Bandwidth @ Pout = 25 W CW Average Group Delay @ Pout = 25 W CW, f = 3500 MHz Part--to--Part Insertion Phase Variation @ Pout = 25 W CW, f = 3500 MHz, Six Sigma Window Gain Variation over Temperature (--30°C to +85°C) Output Power Variation over Temperature (--30°C to +85°C) Symbol P1dB IMDsym Min — — Typ 30 83 Max — — Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA, 3400--3600 MHz Bandwidth VBWres GF Φ Delay ∆Φ ∆G ∆P1dB — — — — — — — 90 0.7 3.15 3.21 13.88 0.046 0.015 — — — — — — — MHz dB ° ns ° dB/°C dB/°C Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 190 mA, IDQ2 = 230 mA, Pout = 0.5 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps PAE PAR ACPR IRL — — — — — 23.5 3.5 9.2 --55 --12 — — — — — dB % dB dBc dB MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 4 RF Device Data Freescale Semiconductor VD1 C1 RF INPUT C5 C6 Z1 Z2 Z4 Z3 Z6 Z5 Z8 Z7 Z10 Z9 Z12 Z11 C7 C17 Z13 NC 1 2 3 4 5 6 7 8 9 NC VGS2 VGS1 NC DUT 16 NC 15 14 C15 VG1 VG2 C16 R1 R2 C14 10 VD1 11 Quiescent Current Temperature Compensation NC 13 12 C13 C9 VD2 + Z42 Z41 C4 C3 C2 C12 Z26 Z25 Z14 Z40 Z15 Z16 Z17 Z18 Z19 Z43 Z20 Z21 Z23 Z22 Z24 Z28 Z29 Z27 C8 Z30 Z31 Z33 Z32 Z36 Z34 Z35 RF Z37 OUTPUT Z38 Z39 Z44 Z45 C11 R3 C10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 0.118″ x 0.044″ Microstrip 0.205″ x 0.044″ Microstrip 0.083″ x 0.096″ Microstrip 0.195″ x 0.044″ Microstrip 0.094″ x 0.132″ Microstrip 0.509″ x 0.044″ Microstrip 0.083″ x 0.091″ Microstrip 0.372″ x 0.044″ Microstrip 0.078″ x 0.192″ Microstrip 0.078″ x 0.044″ Microstrip 0.079″ x 0.141″ Microstrip 0.243″ x 0.044″ Microstrip 0.605″ x 0.044″ Microstrip 0.232″ x 0.340″ Microstrip 0.042″ x 0.340″ Microstrip 0.112″ x 0.150″ Microstrip Z17 Z18 Z19 Z20 Z21 Z22 Z23 Z24 Z25 Z26 Z27 Z28 Z29 Z30 Z31 0.230″ x 0.090″ Microstrip 0.125″ x 0.125″ Microstrip 0.228″ x 0.100″ Microstrip 0.076″ x 0.165″ Microstrip 0.289″ x 0.100″ Microstrip 0.083″ x 0.110″ Microstrip 0.375″ x 0.100″ Microstrip 0.185″ x 0.080″ Microstrip 0.079″ x 0.020″ Microstrip 0.185″ x 0.020″ Microstrip 0.185″ x 0.100″ Microstrip 0.093″ x 0.100″ Microstrip 0.063″ x 0.044″ Microstrip 0.103″ x 0.044″ Microstrip 0.080″ x 0.121″ Microstrip Z32 Z33 Z34 Z35 Z36 Z37 Z38 Z39 Z40 Z41 Z42 Z43 Z44 Z45 PCB 0.080″ x 0.112″ Microstrip 0.193″ x 0.044″ Microstrip 0.080″ x 0.051″ Microstrip 0.157″ x 0.055″ Microstrip 0.080″ x 0.044″ Microstrip 0.080″ x 0.131″ Microstrip 0.040″ x 0.044″ Microstrip 0.073″ x 0.044″ Microstrip 0.574″ x 0.044″ Microstrip L = 0.305″ wi = 0.150″ Angle = 130° Microstrip 0.523″ x 0.044″ Microstrip 0.574″ x 0.044″ Microstrip L = 0.305″ wi = 0.150″ Angle = 130° Microstrip 0.523″ x 0.044″ Microstrip Taconic TLX8--0300, 0.020″, εr = 2.55 Figure 3. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Schematic MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 5 Table 6. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Component Designations and Values Part C1, C13, C14 C2, C3 C4, C5, C9, C10 C6, C7 C8 C11 C12 C15, C16 C17 R1, R2 R3 Description 2.2 μF, 50 V Chip Capacitors 10 μF, 50 V Chip Capacitors 2.2 pF Chip Capacitors 0.5 pF Chip Capacitors 2 pF Chip Capacitor 33 pF Chip Capacitor 220 μF, 63 V Electrolytic Capacitor 4.7 μF, 50 V Chip Capacitors 0.3 pF Chip Capacitor 1 kΩ, 1/8 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Part Number C3225X7R1H225M C5750X5R1H106M ATC100B2R2BT500XT ATC100B0R5BT500XT ATC100B2R0BT500XT ATC100B330JT500XT 222213668221 C4532X5R1H475M ATC100B0R3BT500XT CRCW08051001FKEA CRCW120610R0FKEA Manufacturer TDK TDK ATC ATC ATC ATC BC Components TDK ATC Vishay Vishay VD1 VD2 C12 C2 MW7IC3825N/NB Rev. 7 C4 C1 C5 CUT OUT AREA C3 C6 C7 C17 C9 C13 C15 C14 R1 C8 C10 VG1 R2 VG2 C16 VD1 R3 C11 Figure 4. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Component Layout MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) 25.2 25 24.8 Gps, POWER GAIN (dB) 24.6 24.4 24.2 24 23.8 23.6 23.4 23.2 3400 3425 3450 3475 3500 3525 3550 3575 ACPR IRL Gps PARC 18 VDD = 28 Vdc, Pout = 5 W (Avg.), IDQ1 = 130 mA, IDQ2 = 230 mA 17 OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 16 hD 15 14 --44 --45 ACPR (dBc) --46 --47 --48 --49 3600 IRL, INPUT RETURN LOSS (dB) --7 --8 --9 --10 --11 --12 0 --0.5 --1 --1.5 --2 --2.5 PARC (dB) PARC (dB) f, FREQUENCY (MHz) Figure 5. WiMAX Broadband Performance @ Pout = 5 Watts Avg. ηD, DRAIN EFFICIENCY (%) 25.6 25.4 25.2 Gps, POWER GAIN (dB) 25 24.8 24.6 24.4 24.2 24 23.8 23.6 3400 3425 3450 3475 3500 3525 3550 3575 ACPR IRL Gps 4 VDD = 28 Vdc, Pout = 20 dBm (Avg.), IDQ1 = 130 mA, IDQ2 = 230 mA 3 OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth 2 Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF hD PARC 1 0 --54 --55 --56 --57 --58 --59 3600 ACPR (dBc) --7 --8 --9 --10 --11 --12 IRL, INPUT RETURN LOSS (dB) --0 --0.5 --1 --1.5 --2 --2.5 f, FREQUENCY (MHz) Figure 6. WiMAX Broadband Performance @ Pout = 20 dBm Avg. 26 25 Gps, POWER GAIN (dB) 24 230 mA 23 22 110 mA 21 20 1 10 Pout, OUTPUT POWER (WATTS) CW 100 175 mA IDQ2 = 350 mA 290 mA VDD = 28 Vdc IDQ1 = 130 mA f = 3500 MHz Gps, POWER GAIN (dB) 26 25 24 23 100 mA 22 21 20 1 10 Pout, OUTPUT POWER (WATTS) CW 100 70 mA IDQ1 = 195 mA 160 mA 130 mA VDD = 28 Vdc IDQ2 = 230 mA f = 3500 MHz Figure 7. Power Gain versus Output Power @ IDQ1 = 130 mA Figure 8. Power Gain versus Output Power @ IDQ2 = 230 mA MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) --10 --20 VDD = 28 Vdc, Pout = 2 W (PEP), IDQ1 = 130 mA IDQ2 = 230 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 3500 MHz IM3--L --30 IM3--U IM5--L --40 --50 --60 0.1 IM7--U IM7--L 1 10 100 IM5--U TWO--TONE SPACING (MHz) Figure 9. Intermodulation Distortion Products versus Tone Spacing 25 24.5 Gps, POWER GAIN (dB) 24 23.5 23 22.5 22 PARC 1 0 PARC --1 --2 --3 --4 --5 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 1 5 9 13 17 21 Pout, OUTPUT POWER (WATTS) --1 dB = 6 W --2 dB = 8.5 W ηD ACPR --3 dB = 11.5 W 30 25 20 15 10 Gps 40 VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA f = 3500 MHz, OFDM 802.16d 35 64 QAM 3/4, 4 Bursts --20 --25 --30 --35 --40 --45 --50 ACPR (dBc) OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Figure 10. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 60 --20 --25 --30_C --30 --35 --40 --45 --50 100 ACPR (dBc) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA f = 3500 MHz, OFDM 802.16d, 64 QAM 3/4 50 4 Bursts, 10 MHz Channel Bandwidth 25_C Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 40 85_C 30 20 10 0 Gps 25_C TC = --30_C 85_C ACPR 1 10 --30_C 25_C ηD 85_C Pout, OUTPUT POWER (WATTS) AVG. WiMAX Figure 11. WiMAX, ACPR, Power Gain and Drain Efficiency versus Output Power MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 8 RF Device Data Freescale Semiconductor ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS 30 25 20 15 10 S21 (dB) 5 0 --5 --10 --15 --20 --25 2400 2600 2800 3000 3200 VDD = 28 Vdc IDQ1 = 130 mA, IDQ2 = 230 mA 3400 3600 3800 4000 S11 S21 15 10 5 0 MTTF (HOURS) --5 --15 --20 --25 --30 --35 --40 4200 104 90 110 130 150 170 190 210 230 250 S11 (dB) --10 108 2nd Stage 107 106 105 1st Stage 109 f, FREQUENCY (MHz) TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 5 W Avg., and PAE = 15%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. Broadband Frequency Response Figure 13. MTTF versus Junction Temperature WIMAX TEST SIGNAL 100 10 Input Signal PROBABILITY (%) 1 0.1 (dB) 0.01 0.001 0.0001 OFDM 802.16d, 64 QAM 3/4, 4 Bursts 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 0 2 4 6 8 10 PEAK--TO--AVERAGE (dB) --10 --20 --30 --40 --50 --60 --70 --80 --90 --20 10 MHz Channel BW ACPR in 1 MHz Integrated BW --15 --10 --5 0 ACPR in 1 MHz Integrated BW 5 10 15 20 Figure 14. OFDM 802.16d Test Signal f, FREQUENCY (MHz) Figure 15. WiMAX Spectrum Mask Specifications MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 9 Zo = 50 Ω f = 3600 MHz Zload f = 3400 MHz f = 3400 MHz f = 3600 MHz Zsource VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA, Pout = 5 W Avg. f MHz 3400 3425 3450 3475 3500 3525 3550 3575 3600 Zsource Ω 31.82 -- j19.29 32.86 -- j19.70 33.95 -- j20.93 35.11 -- j22.97 36.33 -- j25.82 37.61 -- j29.49 38.95 -- j33.97 40.35 -- j39.26 41.81 -- j45.37 Zload Ω 4.58 -- j7.62 4.42 -- j7.33 4.22 -- j7.20 4.13 -- j7.22 4.13 -- j7.26 4.07 -- j7.20 3.81 -- j6.99 3.48 -- j6.77 3.21 -- j6.72 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 10 RF Device Data Freescale Semiconductor Table 7. Common Source S-Parameters (VDD = 28 V, IDQ1 = 130 mA, IDQ2 = 230 mA, TA = 25°C, 50 Ohm System) f MHz 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900 3950 4000 S11 |S11| 0.260 0.177 0.139 0.117 0.190 0.283 0.395 0.493 0.575 0.603 0.537 0.479 0.458 0.465 0.427 0.429 0.407 0.395 0.388 0.384 0.389 ∠φ --47.0 --63.4 --68.0 --59.6 --61.1 --85.6 --118.0 --155.0 166.0 126.0 82.8 56.7 29.8 1.3 --27.1 --53.0 --81.6 --110.0 --139.0 --167.0 165.0 |S21| 7.550 8.610 10.000 11.300 13.600 16.800 19.900 22.300 24.000 23.800 19.900 15.600 12.900 11.200 9.830 8.600 7.770 7.020 6.380 5.900 5.460 S21 ∠φ --61.6 --102.0 --143.0 177.0 139.0 95.7 49.1 0.9 --48.3 --99.4 --155.0 165.0 128.0 94.1 58.3 25.7 --7.2 --39.8 --71.8 --104.0 --135.0 |S12| 0.00485 0.00423 0.00424 0.00293 0.00322 0.00533 0.00762 0.00950 0.0116 0.0132 0.0135 0.00994 0.00810 0.00680 0.00636 0.00546 0.00476 0.00445 0.00421 0.00454 0.00531 S12 ∠φ --43.9 --72.7 --98.1 --122.0 --98.2 --118.0 --146.0 --178.0 148.0 111.0 58.2 27.0 1.1 --19.7 --42.4 --65.7 --82.1 --97.7 --113.0 --126.0 --145.0 |S22| 0.724 0.713 0.675 0.612 0.627 0.629 0.547 0.421 0.235 0.053 0.409 0.509 0.585 0.637 0.672 0.707 0.730 0.752 0.761 0.779 0.779 S22 ∠φ --87.7 --113.0 --141.0 --166.0 171.0 138.0 102.0 65.9 23.1 --130.0 124.0 80.6 49.7 21.3 --4.3 --28.9 --53.8 --77.2 --102.0 --125.0 --150.0 MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 11 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 53 52 Pout, OUTPUT POWER (dBm) 51 50 49 48 47 46 45 44 43 16 17 18 19 VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle f = 3400 MHz 20 21 22 23 24 25 26 27 28 P3dB = 47.45 dBm (55.6 W) Ideal Pout, OUTPUT POWER (dBm) 53 52 51 50 49 48 47 46 45 44 43 18 19 20 21 VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle f = 3600 MHz 22 23 24 25 26 27 28 29 30 P1dB = 46.13 dBm (41.0 W) Actual Ideal P3dB = 47.11 dBm (51.5 W) P1dB = 46.66 dBm (46.3 W) Actual Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω P1dB 52.4 -- j42.5 Zload Ω Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource Ω P1dB 126.6 -- j41.9 Zload Ω 3.5 -- j8.5 3.3 -- j8.3 Figure 17. Pulsed CW Output Power versus Input Power @ 28 V @ 3400 MHz Figure 18. Pulsed CW Output Power versus Input Power @ 28 V @ 3600 MHz MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 13 MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 14 RF Device Data Freescale Semiconductor MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 15 MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 16 RF Device Data Freescale Semiconductor MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 17 MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 18 RF Device Data Freescale Semiconductor MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 19 MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 20 RF Device Data Freescale Semiconductor MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 21 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Nov. 2008 Nov. 2010 • Initial Release of Data Sheet • Corrected data sheet to remove “DC Block” from On--chip Matching feature bullet and replaced with “RF Choke to Ground”, p. 1 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13628, p. 1, 3 • Added “RF Input Choke to Ground” circuitry to Functional Block Diagram and Test Circuit Schematic, p. 1, 5 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 22 Description MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 22 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008, 2010. All rights reserved. MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 Document Number: RF Device Data MW7IC3825N Rev. 1, 11/2010 Freescale Semiconductor 23