Freescale Semiconductor Technical Data
Document Number: MW7IC915N Rev. 0, 9/2009
RF LDMOS Wideband Integrated Power Amplifier
The MW7IC915N wideband integrated circuit is designed with on - chip matching that makes it usable from 698 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Driver Application — 900 MHz • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 865 MHz 880 MHz 895 MHz Gps (dB) 37.9 38.0 37.8 PAE (%) 17.1 17.4 17.5 ACPR (dBc) - 50.4 - 50.6 - 51.3
MW7IC915NT1
728 - 960 MHz, 1.6 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 23.5 Watts CW (3 dB Input Overdrive from Rated Pout) • Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 30 to 41.5 dBm CW Pout. • Typical Pout @ 1 dB Compression Point ] 15.5 Watts CW Driver Application — 700 MHz • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 37.8 37.8 37.7 PAE (%) 17.2 17.3 17.3 ACPR (dBc) - 49.5 - 50.5 - 51.4
CASE 1894 - 01 PQFN 8x8 PLASTIC
Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • On - Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel.
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
MW7IC915NT1 1
RF Device Data Freescale Semiconductor
VGS1
VGS2 VGS1 NC VGS2 NC NC NC 18 17 16 15 14 13
Quiescent Current Temperature Compensation (1)
24 23 22 21 20 19 NC GND RFin RFin GND NC 1 2 3 4 5 6
RFin
RFout/VDS2
7 8 9 10 11 12 NC VDS1 VDS1 NC NC NC
RFout/VDS2 RFout/VDS2 RFout/VDS2 RFout/VDS2 RFout/VDS2 RFout/VDS2
VDS1
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Operating Junction Temperature Input Power
(1)
Symbol VDSS VGS VDD Tstg TJ Pin
Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 4.7
Unit Vdc Vdc Vdc °C °C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case W - CDMA Application (Case Temperature 82°C, Pout = 1.6 W CW) Stage 1, 28 Vdc, IDQ1 = 60 mA Stage 2, 28 Vdc, IDQ2 = 130 mA Symbol RθJC 7.5 3.2 Value (1,2) Unit °C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 150 Unit °C
1. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955.
MW7IC915NT1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic Stage 1 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 9 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 52 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, ID = 52 mAdc, Measured in Functional Test) Stage 2 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 36 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 134 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, ID = 134 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) VGS(th) VGS(Q) VGG(Q) VDS(on) 1 — 3.8 0.1 2 2.9 4.6 0.3 3 — 5.3 0.8 Vdc Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc VGS(th) VGS(Q) VGG(Q) 1 — 5.5 2 3 6.3 3 — 7 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W Avg., f = 880 MHz, Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Power Added Efficiency Adjacent Channel Power Ratio Input Return Loss Gps PAE ACPR IRL 35.0 15.0 — — 38.0 17.4 - 50.6 - 22 41.0 — - 47 . 0 -9 dB % dBc dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 865 MHz 880 MHz 895 MHz 1. Part internally input matched. (continued) Gps (dB) 37.9 38.0 37.8 PAE (%) 17.1 17.4 17.5 ACPR (dBc) - 50.4 - 50.6 - 51.3 IRL (dB) - 21 - 22 - 22
MW7IC915NT1 RF Device Data Freescale Semiconductor 3
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ1 = 75 mA, IDQ2 = 100 mA) IMD Symmetry @ 16 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Quiescent Current Accuracy over Temperature (1) with 2 kΩ Gate Feed Resistors ( - 30 to 85°C) Gain Flatness in 30 MHz Bandwidth @ Pout = 1.6 W Avg. Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) Stage 1 Stage 2 Symbol P1dB IMDsym Min — Typ 15.5 Max — Unit W MHz — 45 — Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, 865 - 895 MHz Bandwidth
VBWres ΔIQT GF ΔG ΔP1dB
— — — — — —
180 0.10 0.12 0.1 0.041 0.004
— — — — — —
MHz % dB dB/°C dBm/°C
Typical Performance — 700 MHz (In Freescale 700 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 37.8 37.8 37.7 PAE (%) 17.2 17.3 17.3 ACPR (dBc) - 49.5 - 50.5 - 51.4 IRL (dB) - 23 - 22 - 22
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
MW7IC915NT1 4 RF Device Data Freescale Semiconductor
VG1 R1
VG2 R2
C8
C10 C12
C19
C13 C15 C7 C9 C11
C17
VD2
C1
C2
C3
C4 C14
C5
C6
MW7IC915N Rev 3
C16
C18
VD1
C20
Figure 3. MW7IC915NT1 Test Circuit Component Layout
Table 6. MW7IC915NT1 Test Circuit Component Designations and Values
Part C1 C2, C5 C3 C4 C6, C11, C12, C13, C14 C7, C8 C9, C10 C15, C16 C17, C18 C19, C20 R1, R2 Description 1.8 pF Chip Capacitor 0.8 pF Chip Capacitors 6.2 pF Chip Capacitor 3.3 pF Chip Capacitor 47 pF Chip Capacitors 1 μF Chip Capacitors 0.01 μF Chip Capacitors 4.7 μF Chip Capacitors 10 μF, 50 V Chip Capacitors 100 μF, 50 V Electrolytic Capacitors 2 kΩ, 1/4 W Resistors Part Number ATC100B1R8BT500XT ATC100B0R8BT500XT ATC100B6R2BT500XT ATC100B3R3CT500XT ATC100B470JT500XT GRM31MR71H105KA88L GRM32MR71H104JA01L GRM31CR71H475KA12L GRM55DR61H106KA88L MCGPR50V107M8X11 - RH CRCW12062K00FKEA Manufacturer ATC ATC ATC ATC ATC Murata Murata Murata Murata Multicomp Vishay
MW7IC915NT1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
PAE, POWER ADDED EFFICIENCY (%) 40 39 Gps, POWER GAIN (dB) 38 Gps PAE 19 18 17 16 −46 ACPR (dBc) IRL −47 −48 PARC −49 ACPR 32 800 820 840 860 880 900 920 940 960 −50 980 1000 −40 −10 −20 −30
IRL, INPUT RETURN LOSS (dB)
37 VDD = 28 Vdc, Pout = 1.6 W (Avg.), IDQ1 = 52 mA IDQ2 = 134 mA, Single−Carrier W−CDMA, 3.84 MHz 36 Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 35 34 33
0.5 0 −0.5 −1 PARC (dB)
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.6 Watts Avg.
−5 −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 1 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, Pout = 16 W (PEP), IDQ1 = 52 mA IDQ2 = 134 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz IM3−U IM3−L IM5−U IM5−L IM7−U IM7−L
10 TWO−TONE SPACING (MHz)
100
200
Figure 5. Intermodulation Distortion Products versus Two - Tone Spacing
40 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 39.5 Gps, POWER GAIN (dB) 39 38.5 38 37.5 37 1 0 −1 Gps −2 −3 dB = 6.9 W −3 −4 −5 2 4 6 8 10 Pout, OUTPUT POWER (WATTS) PAE 20 ACPR Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 10 0 −2 dB = 5.2 W 30 VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, f = 880 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth PARC −1 dB = 3.8 W 40 60 50 PAE, POWER ADDED EFFICIENCY (%) −20 −25 −30 −35 −40 −45 −50 ACPR (dBc)
Figure 6. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
MW7IC915NT1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
41 40 Gps, POWER GAIN (dB) 39 895 MHz 38 37 36 35 34 33 1 10 Pout, OUTPUT POWER (WATTS) AVG. 20 Gps 895 MHz 880 MHz 865 MHz 880 MHz 895 MHz ACPR PAE 880 MHz 865 MHz 30 20 10 VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 90 PAE, POWER ADDED EFFICIENCY (%) 80 70 60 50 40 −15 −20 −25 −30 −35 −40 −45 −50 −55 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 3.6
Figure 7. Single - Carrier W - CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power
40 Gain 30 20 GAIN (dB) 10 0 −10 −20 300 VDD = 28 Vdc Pin = −30 dBm IDQ1 = 52 mA IDQ2 = 134 mA 600 −5 −10 −15 −20 IRL −25 −30 1200 IRL (dB) 3.84 MHz Channel BW 0
900
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 2 3 4 5 6 7 8 9 10 10 0 −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 −9 −7.2 −5.4 −3.6 −1.8 0 1.8 5.4 7.2 9 f, FREQUENCY (MHz) −ACPR in 3.84 MHz Integrated BW
PEAK−TO−AVERAGE (dB)
Figure 9. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal
Figure 10. Single - Carrier W - CDMA Spectrum MW7IC915NT1 RF Device Data Freescale Semiconductor 7
VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zin = Zin W 52.99 - j29.47 49.35 - j27.56 46.67 - j23.60 44.88 - j17.63 43.73 - j10.46 43.12 - j2.75 43.38 + j5.01 44.07 + j12.97 43.89 + j12.61 Zload W 7.72 + j13.96 7.34 + j14.74 7.43 + j15.55 7.94 + j16.07 7.98 + j16.74 7.80 + j17.62 8.28 + j18.33 9.07 + j19.04 9.14 + j20.02
Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground. Output Matching Network
Zload =
Device Under Test
Z
in
Z
load
Figure 11. Series Equivalent Input and Load Impedance
MW7IC915NT1 8 RF Device Data Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 48 47 46 Pout, OUTPUT POWER (dBm) 45 44 43 42 41 40 39 38 37 36 0 2 4 6 8 10 12 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 865 880 895 P1dB Watts 18.1 18.5 18.5 dBm 42.6 42.7 42.7 P3dB Watts 22.4 22.3 22.2 dBm 43.5 43.5 43.5 f = 895 MHz Actual f = 865 MHz Ideal
f = 895 MHz f = 865 MHz f = 880 MHz f = 880 MHz
Test Impedances per Compression Level f (MHz) 865 880 895 P1dB P1dB P1dB Zsource Ω 48.7 + j15.6 52.3 + j20.8 55.1 + j22.2 Zload Ω 6.8 + j6.5 6.9 + j6.7 7.4 + j6.7
Figure 12. Pulsed CW Output Power versus Input Power @ 28 V
MW7IC915NT1 RF Device Data Freescale Semiconductor 9
VG1 R1
VG2 C9 R2 C16
C12 C8 C10
C14
VD2
C1
C2
C3
C4 C11
C5
C6
C7
MW7IC915N Rev 3
C13
C15
VD1
C17
Figure 13. MW7IC915NT1 Test Circuit Component Layout — 700 MHz
Table 7. MW7IC915NT1 Test Circuit Component Designations and Values — 700 MHz
Part C1, C3, C6 C2 C4 C5 C7, C8, C9, C10, C11 C12, C13 C14, C15 C16, C17 R1, R2 Description 2.7 pF Chip Capacitors 0.3 pF Chip Capacitor 4.7 pF Chip Capacitor 5.6 pF Chip Capacitor 47 pF Chip Capacitors 4.7 μF Chip Capacitors 10 μF, 50 V Chip Capacitors 100 μF, 50 V Electrolytic Capacitors 2 kΩ, 1/4 W Resistors Part Number ATC100B2R7BT500XT ATC100B0R3BT500XT ATC100B4R7CT500XT ATC100B5R6CT500XT ATC100B470JT500XT GRM31CR71H475KA12L GRM55DR61H106KA88L MCGPR50V107M8X11 - RH CRCW12062K00FKEA Manufacturer ATC ATC ATC ATC ATC Murata Murata Multicomp Vishay
MW7IC915NT1 10 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS — 700 MHz
PAE, POWER ADDED EFFICIENCY (%) 38.8 38.6 Gps, POWER GAIN (dB) 38.4 VDD = 28 Vdc 38.2 Pout = 1.6 W (Avg.), IDQ1 = 50 mA IDQ2 = 144 mA, Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 38 0.01% Probability on CCDF PARC 37.8 37.6 37.4 710 IRL ACPR 720 730 740 750 760 770 780 PAE 17.5 17 16.5 16 Gps −49 ACPR (dBc) −50 −51 −52 790 −10 −20 −30 −40
IRL, INPUT RETURN LOSS (dB)
0.5 0 −0.5 −1 PARC (dB)
f, FREQUENCY (MHz)
Figure 14. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.6 Watts Avg.
41 40 Gps, POWER GAIN (dB) 39 38 37 36 35 ACPR 34 33 1 10 Pout, OUTPUT POWER (WATTS) AVG. 20 20 10 Gps 768 MHz 748 MHz 728 MHz 728 MHz 748 MHz VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 90 PAE, POWER ADDED EFFICIENCY (%) 80 70 60 50 40 PAE 768 MHz 30 −15 −20 −25 −30 −35 −40 −45 −50 −55 ACPR (dBc)
748 MHz 768 MHz
Figure 15. Single - Carrier W - CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power
40 Gain 30 −10 0
GAIN (dB)
10 VDD = 28 Vdc Pin = −30 dBm IDQ1 = 50 mA IDQ2 = 144 mA 600 IRL
−30
0 −10 300
−40
900
−50 1200
f, FREQUENCY (MHz)
Figure 16. Broadband Frequency Response
IRL (dB)
20
−20
MW7IC915NT1 RF Device Data Freescale Semiconductor 11
VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 W Avg. f MHz 710 720 730 740 750 760 770 780 790 Zin = Zin W 54.61 - j2.01 55.46 + j0.26 56.75 + j2.12 58.35 + j3.55 60.11 + j4.65 61.83 + j5.22 63.19 + j5.31 64.01 + j4.90 64.18 + j3.91 Zload W 9.57 + j6.52 9.95 + j7.04 10.70 + j7.79 11.39 + j8.18 11.41 + j8.07 11.00 + j7.90 10.88 + j7.88 11.41 + j7.87 12.32 + j7.61
Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground. Output Matching Network
Zload =
Device Under Test
Z
in
Z
load
Figure 17. Series Equivalent Input and Load Impedance — 700 MHz
MW7IC915NT1 12 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MW7IC915NT1 RF Device Data Freescale Semiconductor 13
MW7IC915NT1 14 RF Device Data Freescale Semiconductor
MW7IC915NT1 RF Device Data Freescale Semiconductor 15
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Sept. 2009 • Initial Release of Data Sheet Description
MW7IC915NT1 16 RF Device Data Freescale Semiconductor
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MW7IC915NT1
Document Number: RF Device Data MW7IC915N Rev. 0, 9/2009 Freescale Semiconductor
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