MW7IC930NBR1

Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 960 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation. Driver Application — 900 MHz • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency (1) 920 MHz 940 MHz 960 MHz Gps (dB) 36.6 36.8 36.6 PAE (%) 16.1 16.7 17.3 ACPR (dBc) - 48.0 - 48.7 - 48.6 MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 728 - 768 MHz, 920 - 960 MHz, 3.2 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 30 Watts CW Pout. • Typical Pout @ 1 dB Compression Point ] 31 Watts CW, IDQ1 = 40 mA, IDQ2 = 340 mA Driver Application — 700 MHz • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 36.4 36.4 36.4 PAE (%) 16.1 16.1 16.0 ACPR (dBc) - 47.7 - 47.8 - 47.9 CASE 1886 - 01 TO - 270 WB - 16 PLASTIC MW7IC930NR1 CASE 1887 - 01 TO - 270 WB - 16 GULL PLASTIC MW7IC930GNR1 CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW7IC930NBR1 Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (2) • Integrated ESD Protection • 225°C Capable Plastic Package GND 1 16 GND 2 NC • RoHS Compliant 15 NC 3 NC • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. V 4 GND VDS1 RFin RFout/VDS2 DS1 5 6 7 8 9 10 11 14 RFout/VDS2 RFin GND VGS1 VGS2 NC GND 13 12 NC GND VGS1 VGS2 Quiescent Current Temperature Compensation (2) (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. 900 MHz Driver Frequency Band table data collected in the 900 MHz application test fixture. See Fig. 7. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2009. All rights reserved. MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Input Power Symbol VDSS VGS VDD Tstg TC TJ Pin Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 4.7 Unit Vdc Vdc Vdc °C °C °C dBm Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case (Case Temperature 80°C, 3.2 W CW) (Case Temperature 80°C, 30 W CW) Stage 1, 28 Vdc, IDQ1 = 106 mA Stage 2, 28 Vdc, IDQ2 = 285 mA Stage 1, 28 Vdc, IDQ1 = 40 mA Stage 2, 28 Vdc, IDQ2 = 340 mA Symbol RθJC Value (2,3) 5.5 1.6 5.8 1.2 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) II (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Stage 1 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 14 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 106 mA) Fixture Gate Quiescent Voltage (4) (VDD = 28 Vdc, IDQ1 = 106 mA, Measured in Functional Test) VGS(th) VGS(Q) VGG(Q) 1.2 — 6.9 2 2.8 9.4 2.7 — 11.9 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. 4. VGG = 3.3 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. (continued) MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Stage 2 — Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 — On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 74 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 285 mA) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, IDQ2 = 285 mA, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 740 mA) VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 — 4.2 0.1 2 2.6 5.9 0.3 2.7 — 7.6 0.8 Vdc Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (2,3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., f = 940 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Power Added Efficiency Adjacent Channel Power Ratio Input Return Loss Gps PAE ACPR IRL 33 14 — — 35.9 16.5 - 49.5 - 18.7 38 — - 46 -9 dB % dBc dB Typical Broadband Performance — 900 MHz (In Freescale 900 MHz Application Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 36.6 36.8 36.6 PAE (%) 16.1 16.7 17.3 ACPR (dBc) - 48.0 - 48.7 - 48.6 IRL (dB) - 19.9 - 20.8 - 19.7 1. VGG = 2.25 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. (continued) MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 RF Device Data Freescale Semiconductor 3 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performance — 900 MHz (In Freescale 900 MHz Application Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, 920 - 960 MHz Bandwidth VDD = 28 Vdc, IDQ1 = 40 mA, IDQ2 = 340 mA Pout @ 1 dB Compression Point, CW IMD Symmetry @ 25 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Quiescent Current Accuracy over Temperature (1) with 3 kΩ Gate Feed Resistors ( - 30 to 85°C) Gain Flatness in 40 MHz Bandwidth @ Pout = 3.2 W Avg. Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) P1dB IMDsym — 31 — W MHz — 45 — VBWres ΔIQT GF ΔG ΔP1dB — — — — — 80 0.02 0.2 0.036 0.01 — — — — — MHz % dB dB/°C dBm/°C Typical W - CDMA Broadband Performance — 700 MHz (In Freescale 700 MHz Application Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 36.4 36.4 36.4 PAE (%) 16.1 16.1 16.0 ACPR (dBc) - 47.7 - 47.8 - 47.9 IRL (dB) - 17.9 - 20.7 - 21.8 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 4 RF Device Data Freescale Semiconductor VDD1 C14 C15 R7 C13 C17 C9 C8 C7 CUT OUT AREA VDD2 C16 C18 C6 C5 C4 C11 C12 C10 R4 VGG1 VGG2 R1 R5 R6 C2 C3 C1 MW7IC930N Rev 2 R2 R3 Figure 3. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Layout — 900 MHz Table 6. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 900 MHz Part C1, C4, C7 C2, C5, C8 C3, C6 C9, C15 C10 C11 C12 C13, C14 C16, C17 C18 R1, R2, R3, R4, R5, R6 R7 PCB Description 47 pF Chip Capacitors 10 nF, 50 V Chip Capacitors 1 μF, 50 V Chip Capacitors 10 μF, 50 V Chip Capacitors 16 pF Chip Capacitor 6.2 pF Chip Capacitor 7.5 pF Chip Capacitor 47 pF Chip Capacitors 100 μF, 50 V Electrolytic Capacitors 0.5 pF Chip Capacitor 1000 Ω, 1/4 W Chip Resistors 0 Ω, 3A Chip Resistor 0.020″, εr = 3.5 Part Number ATC600F470JT250XT C0603C103J5RAC - TU GRM21BR71H105KA12L GRM55DR61H106KA88L ATC100B160JT500XT ATC100B6R2BT500XT ATC100B7R5CT500XT ATC100B470JT500XT MCGPR35V337M10X16 - RH ATC100B0R5BT500XT CRCW12061K00FKEA CRCW12060000Z0EA RF - 35 Manufacturer ATC Kemet Murata Murata ATC ATC ATC ATC Multicomp ATC Vishay Vishay Taconic MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — 900 MHz VDD = 28 Vdc, Pout = 3.2 W (Avg.), IDQ1 = 106 mA 38 I DQ2 = 285 mA, Single−Carrier W−CDMA 37.5 Gps, POWER GAIN (dB) 37 36.5 36 35.5 35 3.84 MHz Channel Bandwidth 34.5 Input Signal PAR = 7.5 dB @ 0.01% 34 Probability on CCDF 33.5 800 825 850 875 900 925 PARC IRL ACPR Gps PAE, POWER ADDED EFFICIENCY (%) 38.5 20 PAE 18 16 14 12 −40 −42 ACPR (dBc) −44 −46 −48 IRL, INPUT RETURN LOSS (dB) −18 −20 −22 −24 −26 −28 0.5 0 −0.5 −1 −1.5 −2 PARC (dB) 950 975 −50 1000 f, FREQUENCY (MHz) Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 3.2 Watts Avg. IMD, INTERMODULATION DISTORTION (dBc) −10 VDD = 28 Vdc, Pout = 25 W (PEP), IDQ1 = 106 mA IDQ2 = 285 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz IM3−U −30 IM3−L IM5−U IM5−L −50 IM7−L IM7−U −60 1 10 TWO−TONE SPACING (MHz) 100 −20 −40 Figure 5. Intermodulation Distortion Products versus Two - Tone Spacing 37.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 37 Gps, POWER GAIN (dB) 36.5 36 35.5 35 34.5 1 0 PARC −1 VDD = 28 Vdc IDQ1 = 106 mA −2 IDQ2 = 285 mA f = 940 MHz −3 −4 −5 2 PAE ACPR 5 Single−Carrier W−CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 8 11 14 −2 dB = 8.98 W 28 −3 dB = 12.17 W 22 16 10 −1 dB = 6.41 W 34 Gps 46 40 PAE, POWER ADDED EFFICIENCY (%) −26 −30 −34 −38 −42 −46 −50 ACPR (dBc) Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak - to - Average Ratio Compression (PARC) versus Output Power MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 900 MHz 38 37.5 37 Gps, POWER GAIN (dB) 920 MHz 36.5 VDD = 28 Vdc 36 IDQ1 = 106 mA, IDQ2 = 285 mA Single−Carrier W−CDMA, 3.84 MHz 35.5 Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% 35 Probability on CCDF 34.5 PAE 34 33.5 33 1 ACPR 10 Pout, OUTPUT POWER (WATTS) AVG. 50 Gps 960 MHz 960 MHz 940 MHz 920 MHz 960 MHz 940 MHz 60 PAE, POWER ADDED EFFICIENCY (%) 54 48 42 36 30 920 MHz 24 18 12 6 0 0 −5 −10 −15 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 3.6 −20 −25 −30 −35 −40 −45 −50 Figure 7. Single - Carrier W - CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power 40 Gain 35 30 GAIN (dB) 25 20 15 10 450 VDD = 28 Vdc Pin = −10 dBm IDQ1 = 106 mA IDQ2 = 285 mA −5 −10 −15 −20 −25 −30 1250 IRL (dB) 3.84 MHz Channel BW 0 IRL 550 650 750 850 950 1050 1150 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response W - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 2 3 4 5 6 7 8 9 10 10 0 −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 −9 −7.2 −5.4 −3.6 −1.8 0 1.8 5.4 7.2 9 f, FREQUENCY (MHz) −ACPR in 3.84 MHz Integrated BW PEAK−TO−AVERAGE (dB) Figure 9. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal Figure 10. Single - Carrier W - CDMA Spectrum MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zin = Zin W 37.95 + j2.31 39.95 + j2.72 42.70 + j1.02 44.40 - j1.38 46.25 - j4.92 45.70 - j8.41 45.46 - j11.47 45.07 - j15.19 43.49 - j18.03 Zload W 4.70 + j0.98 4.29 + j1.23 3.93 + j1.67 3.63 + j2.15 3.41 + j2.61 3.14 + j3.05 2.94 + j3.48 2.85 + j3.90 2.69 + j4.32 Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground. Output Matching Network Zload = Device Under Test Z in Z load Figure 11. Series Equivalent Input and Load Impedance — 900 MHz MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS — 900 MHz VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 51 50 Pout, OUTPUT POWER (dBm) 49 48 47 46 45 44 43 42 41 9 10 11 12 13 14 15 16 17 18 19 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 920 940 960 P1dB Watts 43 42 42 dBm 46.3 46.3 46.3 P3dB Watts 51 50 50 dBm 47.1 47 47 f = 940 MHz f = 920 MHz f = 960 MHz f = 940 MHz Actual f = 920 MHz f = 960 MHz Ideal Test Impedances per Compression Level f (MHz) 920 940 960 P1dB P1dB P1dB Zsource Ω 55.82 + j15.71 52.56 + j20.20 49.18 + j25.00 Zload Ω 4.54 + j1.15 4.38 + j1.21 5.04 + j1.15 Figure 12. Pulsed CW Output Power versus Input Power @ 28 V MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 RF Device Data Freescale Semiconductor 9 VDD1 C14 C15 R7 C13 C17 C9 C8 C7 CUT OUT AREA VDD2 C16 C10 C18 C6 C5 C4 C11 C12 R4 VGG1 VGG2 R1 R5 R6 C2 C1 C3 MW7IC930N Rev 2 R2 R3 Figure 13. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Layout — 700 MHz Table 7. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 700 MHz Part C1, C4, C7 C2, C5, C8 C3, C6 C9, C15 C10 C11 C12 C13, C14 C16, C17 C18 R1, R2, R3, R4, R5, R6 R7 PCB Description 47 pF Chip Capacitors 10 nF, 50 V Chip Capacitors 1 μF, 50 V Chip Capacitors 10 μF, 50 V Chip Capacitors 13 pF Chip Capacitor 7.5 pF Chip Capacitor 6.8 pF Chip Capacitor 47 pF Chip Capacitors 100 μF, 50 V Electrolytic Capacitors 1.8 pF Chip Capacitor 1000 Ω, 1/4 W Chip Resistors 0 Ω, 3A Chip Resistor 0.020″, εr = 3.5 Part Number ATC600F470JT250XT C0603C103J5RAC GRM21BR71H105KA12L GRM55DR61H106KA88L ATC100B130JT500XT ATC100B7R5CT500XT ATC100B6R8CT500XT ATC100B470JT500XT MCGPR35V337M10X16 - RH ATC100B1R8BT500XT CRCW12061K00FKEA CRCW12060000Z0EA RF - 35 Manufacturer ATC Kemet Murata Murata ATC ATC ATC ATC Multicomp ATC Vishay Vishay Taconic MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 700 MHz 37.5 37 36.5 Gps, POWER GAIN (dB) Gps 768 MHz 748 MHz 728 MHz 48 42 36 30 748 MHz 768 MHz 728 MHz 50 24 18 12 6 748 MHz 1 10 Pout, OUTPUT POWER (WATTS) AVG. 0 PAE, POWER ADDED EFFICIENCY (%) 54 60 0 −5 −10 −15 ACPR (dBc) −20 −25 −30 −35 −40 −45 −50 36 VDD = 28 Vdc 35.5 IDQ1 = 106 mA, IDQ2 = 285 mA Single−Carrier W−CDMA, 3.84 MHz 35 Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% 34.5 Probability on CCDF 34 728 MHz PAE 33.5 33 32.5 ACPR Figure 14. Single - Carrier W - CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power — 700 MHz VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg. f MHz 710 720 730 740 750 760 770 780 790 Zin = Zin W 25.21 - j1.21 33.76 + j5.36 38.78 + j1.40 40.14 - j0.76 35.46 - j1.15 34.65 - j0.53 34.75 - j0.43 36.20 + j0.81 36.18 + j1.33 Zload W 8.57 + j2.52 8.52 + j2.46 8.44 + j2.34 8.36 + j2.16 8.30 + j2.00 8.32 + j1.90 8.31 + j1.86 8.27 + j1.98 8.23 + j2.12 Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground. Zload = Device Under Test Output Matching Network Z in Z load Figure 15. Series Equivalent Input and Load Impedance — 700 MHz MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 12 RF Device Data Freescale Semiconductor MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 RF Device Data Freescale Semiconductor 13 MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 14 RF Device Data Freescale Semiconductor MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 RF Device Data Freescale Semiconductor 15 MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 16 RF Device Data Freescale Semiconductor MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 RF Device Data Freescale Semiconductor 17 MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 18 RF Device Data Freescale Semiconductor MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 RF Device Data Freescale Semiconductor 19 MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 20 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Aug. 2009 • Initial Release of Data Sheet Description MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 RF Device Data Freescale Semiconductor 21 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 2Rev. 0, 8/2009 2 Document Number: MW7IC930N RF Device Data Freescale Semiconductor