1MB03D-120

Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Outline Drawing n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25°C) Symbols VCES VGES DC Tc= 25°C IC 25 Collector Current DC Tc=100°C IC 100 1ms Tc= 25°C IC PULSE IGBT Max. Power Dissipation PC FWD Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque n Equivalent Circuit Ratings 1200 ± 20 5 2.5 15 70 40 +150 -40 ∼ +150 50 Units V V A W W °C °C Nm • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=2.5mA VGE=15V IC=2.5A VGE=0V VCE=10V f=1MHz VCC=600V IC=2.5A VGE=±15V RG=430Ω VCC=600V IC=2.5A VGE=+15V RG=43Ω IF=2.5A VGE=0V IF=2.5A, VGE=-10V, di/dt=100A/µ s Min. Typ. Max. 1.0 20 8.5 3.5 Units mA µA V pF 1.2 0.6 1.5 0.5 0.16 0.11 0.30 0.5 3.0 350 5.5 400 70 20 Turn-on Time Switching Time Turn-off Time Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time µs µs V ns • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Test Conditions IGBT Diode Min. Typ. Max. 1.78 3.12 Units °C/W Collector Current vs. Collector-Emitter Voltage 6 T j= 2 5 ° C 6 Collector Current vs. Collector-Emitter Voltage T j= 1 2 5 ° C 5 V GE = 2 0 V , 1 5 V 1 2 V V GE = 2 0 V , 1 5 V 1 2 V 5 [A] [A] 4 4 10V 3 3 10V 2 C Collector Current : I Collector Current : I C 2 1 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [ V] 1 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [ V] Collector-Emitter Voltage vs. Gate-Emitter Voltage 12 T j= 2 5 ° C 12 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 1 2 5 ° C [V] 10 [V] CE 10 CE Collector-Emitter Voltage : V 6 Collector-Emitter Voltage : V 8 8 6 4 IC = 5A 2.5A 1.25A 4 IC = 5A 2.5A 1.25A 2 2 0 0 5 10 15 20 25 0 0 5 10 15 20 25 Gate-Emitter Voltage : V GE [ V] Gate-Emitter Voltage : V GE [ V] Switching Time vs. Collector Current V CC = 6 0 0 V , R G = 4 3 Ω , V GE = ± 1 5 V , T j= 2 5 ° C 1000 t off Switching Time vs. Collector Current V CC = 6 0 0 V , R G = 4 3 Ω , V GE= ± 1 5 V , T j= 1 2 5 ° C t off 1000 , t r, t off , t f [nsec] tf , t r, t off , t f [nsec] tf t on 100 t on 100 tr Switching Time : t on tr 10 0 1 2 3 4 5 6 Switching Time : t on 10 0 1 2 3 4 5 6 Collector Current : I C [ A] Collector Current : I C [ A] Switching Time vs. R G V CC =600V, I C =2.5A, V GE = ± 1 5 V , T j= 2 5 ° C t on Switching Time vs. R G V CC =600V, I C =2.5A, V GE = ± 1 5 V , T j= 1 2 5 ° C 1000 , t r, t off , t f [nsec] , t r, t off , t f [nsec] 1000 t off t off tf on tf 100 tr Switching Time : t Switching Time : t on t on tr 10 100 Gate Resistance : R G [ Ω ] 100 100 Gate Resistance : R G [ Ω ] Capacitance vs. Collector-Emitter Voltage T j= 2 5 ° C 1000 Dynamic Input Characteristics T j= 2 5 ° C 25 VCC= 400V 600V 800V [V] , C res , C ies [pF] 1000 C ies CE Collector-Emitter Voltage : V 600 15 Capacitance : C oes 100 C oes 400 10 10 C res 200 5 1 0 5 10 15 20 25 30 35 0 0 20 40 Gate Charge : QG 60 [ nQ] 0 80 Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , - di Reverse Recovery Current vs. Forward Current V R= 2 0 0 V , -di 150 / dt = 1 0 0 A / µ s e c 6 / dt = 1 0 0 A / µ s e c [nsec] [A] 125°C 100 125°C 4 rr Reverse Recovery Time : t Reverse Recovery Current : I rr 25°C 25°C 50 2 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Forward Current : I F [ A] Forward Current : I F [ A] Gate-Emitter Voltage : V GE [V] 800 20 Reverse Biased Safe Operating Area + V GE= 1 5 V , - V GE < 1 5 V , T j< 1 2 5 ° C , R G> 4 3 Ω 6 80 Typical Short Circuit Capability V CC = 8 0 0 V , R G = 4 3 Ω , T j= 1 2 5 ° C 80 5 [A] [A] C Short Circuit Current : I 3 40 40 2 20 20 1 0 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 [ V] Gate Voltage : V GE Collector-Emitter Voltage : V CE [ V] 0 25 Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 6 T j= 1 2 5 ° C 5 25°C 200 I F =2.5A, T j= 1 2 5 ° C - di / dt 20 [nsec] 150 15 [A] Forward Current : I I rr 100 10 3 2 50 t rr 5 1 0 0 1 2 3 4 0 0 100 200 -di 300 / dt 400 500 0 600 Forward Voltage : V F [ V] [ A/µsec] Transient Thermal Resistance Thermal Resistance : Rth(j-c) [°C/W] 10 1 FWD 10 0 IGBT 10 -1 10 -4 10 -2 10 -3 10 -2 10 -1 10 0 Pulse Width : P W [ sec] Reverse Recovery Current : I 4 Reverse Recovery Time : t F rr rr [A] Short Circuit Time : t Collector Current : I SC 4 t SC SC I SC [µs] 60 60 Switching losses (Eon, Eoff vs. IC) IC [A] Test Circuit Switching waveforms Specification is subject to change without notice May 97