1MB08-120

Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Outline Drawing n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25°C) Symbols VCES VGES DC Tc= 25°C IC 25 Collector Current DC Tc=100°C IC 100 1ms Tc= 25°C IC PULSE IGBT Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque n Equivalent Circuit Ratings 1200 ± 20 13 8 39 115 +150 -40 ∼ +150 50 Units V V A W °C °C Nm • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=8mA VGE=15V IC=8A VGE=0V VCE=10V f=1MHz VCC=600V IC=8A VGE=±15V RG=200Ω VCC=600V IC=8A VGE=+15V RG=20Ω Min. Typ. Max. 1.0 20 8.5 3.5 Units mA µA V pF 1.2 0.6 1.5 0.5 0.16 0.11 0.30 0.5 5.5 1000 160 60 Turn-on Time Switching Time Turn-off Time Turn-on Time Turn-off Time µs µs • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Test Conditions Min. Typ. Max. 1.08 Units Collector Current vs. Collector-Emitter Voltage 25 T j= 2 5 ° C 25 Collector Current vs. Collector-Emitter Voltage T j= 1 2 5 ° C V GE= 2 0 V , 1 5 V 20 20 V GE= 2 0 V , 1 5 V [A] C Collector Current : I Collector Current : I 15 C [A] 12V 12V 15 10V 10 10 10V 5 5 8V 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [ V] Collector-Emitter Voltage : V CE [ V] 8V 0 Collector-Emitter Voltage vs. Gate-Emitter Voltage 12 T j= 2 5 ° C 12 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 1 2 5 ° C [V] 10 [V] CE 10 CE Collector-Emitter Voltage : V 6 Collector-Emitter Voltage : V 8 8 6 4 I C= 16A 8A 4 I C= 16A 8A 2 4A 2 4A 0 0 0 5 10 15 20 25 0 5 10 15 20 25 Gate-Emitter Voltage : V GE [ V] Gate-Emitter Voltage : V GE [ V] Switching Time vs. Collector Current V CC = 6 0 0 V , R G = 2 0 Ω , V GE = ± 1 5 V , T j= 2 5 ° C Switching Time vs. Collector Current V CC = 6 0 0 V , R G = 2 0 Ω , V GE= ± 1 5 V , T j= 1 2 5 ° C 1000 1000 t off tf t off , t r, t off , t f [nsec] , t r, t off , t f [nsec] tf on t on 100 Switching Time : t Switching Time : t on t on 100 tr tr 10 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 Collector Current : I C [ A] Collector Current : I C [ A] Switching Time vs. R G V CC =600V, I C =8A, V GE = ± 1 5 V , T j= 2 5 ° C Switching Time vs. R G V CC =600V, I C =8A, V GE = ± 1 5 V , T j= 1 2 5 ° C , t r, t off , t f [nsec] , t r, t off , t f [nsec] 1000 1000 t off tf t off tf t on on Switching Time : t Switching Time : t on t on 100 tr tr 100 10 10 100 Gate Resistance : R G [ Ω ] 100 Gate Resistance : R G [ Ω ] Capacitance vs. Collector-Emitter Voltage T j= 2 5 ° C 1200 Dynamic Input Characteristics T j= 2 5 ° C 30 VCC = [V] , C res , C ies [pF] 1000 C ies 1000 400V 600V 800V 25 CE Collector-Emitter Voltage : V 800 20 oes 100 C oes 600 15 C res 10 400 10 200 5 1 0 5 10 15 20 25 30 35 0 0 20 40 60 80 Gate Charge : 100 120 Q G [ nQ] 140 0 160 Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , - di Reverse Recovery Current vs. Forward Current V R= 2 0 0 V , - di 200 / dt= 1 0 0 A / µ s e c 10 / dt = 1 0 0 A / µ s e c [nsec] [A] 150 rr Reverse Recovery Time : t Reverse Recovery Current : I rr 125°C 8 125°C 6 25°C 4 100 25°C 50 2 0 0 5 10 15 0 0 5 10 15 Forward Current : I F [ A] Forward Current : I F [ A] Gate-Emitter Voltage : V Capacitance : C GE [V] Reverse Biased Safe Operating Area + V GE= 1 5 V , - V GE < 1 5 V , T j< 1 2 5 ° C , R G > 2 0 Ω 18 16 200 Typical Short Circuit Capability V CC = 8 0 0 V , R G = 2 0 Ω , T j= 1 2 5 ° C 80 [A] 14 [A] C Short Circuit Current : I 10 8 6 4 2 0 0 200 400 600 800 1000 1200 1400 100 40 50 20 0 5 10 15 20 [ V] Gate Voltage : V GE Collector-Emitter Voltage : V CE [ V] 0 25 Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 25 250 I F = 8 A , T j= 1 2 5 ° C - di / dt 25 [A] rr 15 Forward Current : I 150 15 10 100 t rr 50 10 5 5 0 0 1 2 3 4 0 0 100 200 -di 300 / dt 400 500 0 600 Forward Voltage : V F [ V] [ A/µsec] Transient Thermal Resistance Thermal Resistance : Rth(j-c) [°C/W] 10 1 10 0 IGBT 10 -1 10 -4 10 -2 10 -3 10 -2 10 -1 10 0 Pulse Width : P W [ sec] P.O. Box702708-Dallas,TX75370-(972)-233-1589Fax(972)-233-0481-www.collmer.com Reverse Recovery Current : I Reverse Recovery Time : t I rr F rr [A] 20 [nsec] T j= 1 2 5 ° C 2 5 ° C 200 20 Short Circuit Time : t Collector Current : I SC 12 t SC I SC SC [µs] 150 60