1MB10-120

1MB10-120,1MB10D-120, 1200V / 10A Molded Package Features · Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up Molded IGBT Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) 1MB10-120 / IGBT Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=100°C 1ms Tc=25°C Max. power dissipation(IGBT) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC Tj Tstg Rating 1200 ±20 16 10 48 135 +150 -40 to +150 50 Unit V V A A A W °C °C N·cm Equivalent Circuit Schematic IGBT C:Collector G:Gate E:Emitter 1MB10D-120 / IGBT+FWD Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=100°C 1ms Tc=25°C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC PC Tj Tstg Rating 1200 ±20 16 10 48 135 85 +150 -40 to +150 50 Unit V V A A A W W °C °C N·cm IGBT + FWD C:Collector G:Gate E:Emitter 1MB10-120, 1MB10D-120 Electrical characteristics (at Tj=25°C unless otherwise specified) 1MB10-120 / IGBT I tem Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf Characteristics Min. Typ. – – 5.5 – – – – – – – – – – – – 1200 250 80 – – – – Conditions Max. 1.0 20 8.5 3.5 – – – 1.2 0.6 1.5 0.5 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=10mA VGE=15V, IC=10A VGE=0V VCE=10V f=1MHz VCC=600V IC=10A VGE=±15V RG=160 ohm (Half Bridge) Molded IGBT Unit mA µA V V pF µs 1MB10D-120 / IGBT+FWD Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time FWD forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Characteristics Min. Typ. – – 5.5 – – – – – – – – – – – – – – 1200 250 80 – – – – – – Conditions Max. 1.0 20 8.5 3.5 – – – 1.2 0.6 1.5 0.5 3.0 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=10mA VGE=15V, IC=10A VGE=0V V CE=10V f=1MHz VCC=600V, IC=10A VGE=±15V RG=160 ohm (Half Bridge) IF=10A, VGE=0V IF=10A, VGE=-10V, di/dt=100A/µs mA µA V V pF Unit µs V µs Thermal resistance characteristics 1MB10-120 / IGBT Item Thermal resistance Symbol Rth(j-c) Characteristics Min. Typ. – – Conditions Max. 0.92 IGBT °C/W Unit 1MB10D-120 / IGBT+FWD Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Characteristics Min. Typ. – – – – Conditions Max. 0.92 1.47 IGBT FWD °C/W °C/W Unit Outline drawings, mm 1MB10-120, 1MB10D-120 TO-3P 1MB10-120, 1MB10D-120 Characteristics 1MB10-120,1MB10D-120 Collector current vs. Collector-Emitter voltage Tj=25°C 20 20 Molded IGBT Collector current vs. Collector-Emitter voltage Tj=125°C 15 Collector current : Ic [A] Collector current : Ic [A] 15 10 10 5 5 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C 10 10 Collector-Emitter vs. Gate-Emitter voltage Tj=125°C Collector-Emitter voltage : VCE [V] 8 Collector-Emitter voltage : VCE [V] 8 6 6 4 4 2 2 0 0 5 10 15 20 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=160 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=600V, RG=160 ohm, VGE=±15V, Tj=125°C Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 1000 100 100 0 5 10 Collector current : Ic [A] 15 20 0 5 10 Collector current : Ic [A] 15 20 1MB10-120, 1MB10D-120 Characteristics 1MB10-120,1MB10D-120 Switching time vs. RG Vcc=600V, Ic=10A, VGE=±15V, Tj=25°C IGBT Module Switching time vs. RG Vcc=600V, Ic=10A, VGE=±15V, Tj=125°C Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 1000 100 100 Gate resistance : RG [ohm] 100 100 Gate resistance : RG [ohm] Dynamic input characteristics 1000 Capacitance vs. Collector-Emitter voltage 25 Tj=25°C Tj=25°C Collector-Emitter voltage : VCE [V] 600 15 Gate-Emitter voltage : VGE [V] Capacitance : Cies, Coes, Cres [nF] 800 20 1000 100 400 10 10 200 5 0 0 20 40 60 80 100 Gate charge : Qg [nC] 120 140 160 0 1 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35 Reversed biased safe operating area < +VGE=15V, -VGE = 15V, Tj < 125°C, RG > 160 ohm = = 400 20 Typical short circuit capability Vcc=800V, RG=160 ohm, Tj=125°C 80 Short circuit time current : Isc [A] 300 60 Collector current : Ic [A] 200 40 10 5 100 20 0 0 0 0 200 400 600 800 1000 1200 5 10 Collector-Emitter voltage : VCE [V] 15 Gate voltage : VGE [V] 20 25 Short circuit time : tsc [µs] 15 1MB10-120, 1MB10D-120 Characteristics 1MB10-120,1MB10D-120 Transient thermal resistance IGBT Module Thermal resistance : Rth (j-c) [°C/W] 101 100 10-1 10-2 10-4 10-3 10-2 Pulse width : PW [sec.] 10-1 100 1MB10D-120 Reverse recovery time vs. Forward current -di/dt=30A / µsec 800 10 Reverse recovery current vs. Forward current -di/dt=30A / µsec 8 600 reverse recovery time : trr [nsec] reverse recovery current : Irr [A] 6 400 4 200 2 0 0 5 10 15 Forward current : IF [A] 0 0 5 10 15 Forward current : IF [A] Forward current vs. Foeward voltage 800 20 Reverse recovery time characteristics vs. -di/dt IF=10A, Tj=125°C 20 600 15 15 reverse recovery current : Irr [A] reverse recovery time : trr [nsec] Forward current : IF [A] 400 10 10 5 200 5 0 0 0 1.0 2.0 3.0 4.0 0 20 40 60 -di/dt 80 [ A / µsec ] 100 120 Forward voltage : VF [V] 0