1MB30-060

1MB30-060,1MBH30D-060, 600V / 30A Molded Package Features · Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up Molded IGBT Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) 1MB30-060 / IGBT Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=80°C 1ms Tc=25°C Max. power dissipation(IGBT) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC80 Icp PC Tj Tstg Rating 600 ±20 48 30 192 180 +150 -40 to +150 50 Unit V V A A A W °C °C N·cm Equivalent Circuit Schematic IGBT C:Collector G:Gate E:Emitter 1MBH30D-060 / IGBT+FWD Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=100°C 1ms Tc=25°C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC PC Tj Tstg Rating 600 ±20 58 30 232 220 120 +150 -40 to +150 70 Unit V V A A A W W °C °C N·cm IGBT + FWD C:Collector G:Gate E:Emitter 1MB30-060, 1MBH30D-060 Electrical characteristics (at Tj=25°C unless otherwise specified) 1MB30-060 / IGBT I tem Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf Characteristics Min. Typ. – – 5.5 – – – – – – – – – – – – 1900 400 100 – – – – Conditions Max. 1.0 20 8.5 3.0 – – – 1.2 0.6 1.0 0.35 VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=30mA VGE=15V, IC=30A VGE=0V VCE=10V f=1MHz VCC=300V IC=30A VGE=±15V RG=82 ohm (Half Bridge) Molded IGBT Unit mA µA V V pF µs 1MBH30D-060 / IGBT+FWD Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time FWD forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Characteristics Min. Typ. – – 5.5 – – – – – – – – – – – – – – 1900 400 100 – – – – – – Conditions Max. 1.0 20 8.5 3.0 – – – 1.2 0.6 1.0 0.35 3.0 0.3 VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=30mA VGE=15V, IC=30A VGE=0V V CE=10V f=1MHz VCC=300V, IC=30A VGE=±15V RG=82 ohm (Half Bridge) IF=30A, VGE=0V IF=30A, VGE=-10V, di/dt=100A/µs mA µA V V pF Unit µs V µs Thermal resistance characteristics 1MB30-060 / IGBT Item Thermal resistance Symbol Rth(j-c) Characteristics Min. Typ. – – Conditions Max. 0.69 IGBT °C/W Unit 1MBH30D-060 / IGBT+FWD Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Characteristics Min. Typ. – – – – Conditions Max. 0.56 1.04 IGBT FWD °C/W °C/W Unit Outline drawings, mm 1MB30-060 TO-3P 1MBH30D-060 TO-3PL 1MB30-060, 1MBH30D-060 Characteristics 1MB30-060,1MBH30D-060 Collector current vs. Collector-Emitter voltage Tj=25°C 100 100 Molded IGBT Collector current vs. Collector-Emitter voltage Tj=125°C 80 Collector current : Ic [A] Collector current : Ic [A] 80 60 60 40 40 20 20 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C 10 10 Collector-Emitter vs. Gate-Emitter voltage Tj=125°C Collector-Emitter voltage : VCE [V] 8 Collector-Emitter voltage : VCE [V] 8 6 6 4 4 2 2 0 0 5 10 15 20 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=82 ohm, VGE=±15V, Tj=25°C 1000 1000 Switching time vs. Collector current Vcc=300V, RG=82 ohm, VGE=±15V, Tj=125°C Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 100 100 10 0 10 20 30 40 50 Collector current : Ic [A] 10 0 10 20 30 40 50 Collector current : Ic [A] 1MB30-060, 1MBH30D-060 Characteristics 1MB30-060,1MBH30D-060 Switching time vs. RG Vcc=300V, Ic=30A, VGE=±15V, Tj=25°C Switching time vs. RG IGBT Module Vcc=300V, Ic=30A, VGE=±15V, Tj=125°C Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 1000 1000 100 100 10 0 100 200 300 400 Gate resistance : RG [ohm] 10 0 100 200 300 400 Gate resistance : RG [ohm] Dynamic input characteristics 500 Capacitance vs. Collector-Emitter voltage 25 Tj=25°C Tj=25°C Collector-Emitter voltage : VCE [V] 400 Capacitance : Cies, Coes, Cres [nF] 20 1000 300 15 200 10 Gate-Emitter voltage : VGE [V] 100 100 5 0 0 20 40 60 80 100 Gate charge : Qg [nC] 120 140 160 0 10 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35 70 Reversed biased safe operating area < > +VGE=15V, -VGE = 15V, Tj < 125°C, RG = 82 ohm = 500 Typical short circuit capability Vcc=400V, RG=82 ohm, Tj=125°C 50 60 Collector current : Ic [A] 50 Short circuit time current : Isc [A] 400 40 40 300 30 30 200 20 20 100 10 10 0 0 0 0 100 200 300 400 500 600 700 5 10 Collector-Emitter voltage : VCE [V] 15 Gate voltage : VGE [V] 20 25 Short circuit time : tsc [µs] 1MB30-060, 1MBH30D-060 Characteristics 1MB30-060,1MBH30D-060 Transient thermal resistance IGBT Module Thermal resistance : Rth (j-c) [°C/W] 100 10-1 10-2 10-3 10-4 10-3 10-2 Pulse width : PW [sec.] 10-1 100 1MBH30D-060 Reverse recovery time vs. Forward current -di/dt=90A / µsec 400 8 Reverse recovery current vs. Forward current -di/dt=90A / µsec 300 6 reverse recovery time : trr [nsec] 200 reverse recovery current : Irr [A] 4 100 2 0 0 10 20 Forward current : IF [A] 30 40 50 0 0 10 20 30 40 50 Forward current : IF [A] Forward current vs. Foeward voltage 500 100 Reverse recovery time characteristics vs. -di/dt IF=30A, Tj=125°C 25 400 80 20 reverse recovery time : trr [nsec] 300 15 60 Forward current : IF [A] 40 200 10 20 100 5 0 0 0 1.0 2.0 3.0 4.0 5.0 0 100 200 -di/dt 300 [ A / µsec ] 400 500 Forward voltage : VF [V] 0 reverse recovery current : Irr [A]