1MBC05-060_01

1MBC05-060,1MBC05D-060, 1MBG05D-060 600V / 5A Molded Package Features · Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up Molded IGBT Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) 1MBC05-060 / IGBT Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=100°C 1ms Tc=25°C Max. power dissipation(IGBT) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC Tj Tstg Rating 600 ±20 13 5 52 50 +150 -40 to +150 40 Unit V V A A A W °C °C N·m Equivalent Circuit Schematic IGBT C:Collector G:Gate E:Emitter 1MBC05D-060, 1MBG05D-060 / IGBT+FWD Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=100°C 1ms Tc=25°C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC PC Tj Tstg Rating 600 ±20 13 5 52 50 25 +150 -40 to +150 40 Unit V V A A A W W °C °C N·m IGBT + FWD C:Collector G:Gate E:Emitter 1MBC05-060, 1MBC05D-060, 1MBG05D-060 Electrical characteristics (at Tj=25°C unless otherwise specified) 1MBC05-060 / IGBT I tem Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf Characteristics Min. Typ. – – 5.5 – – – – – – – – – – – – 400 85 15 – – – – Conditions Max. 1.0 20 8.5 3.0 – – – 1.2 0.6 1.0 0.35 VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=5mA VGE=15V, IC=5A VGE=0V VCE=10V f=1MHz VCC=300V IC=5A VGE=±15V RG=330 ohm (Half Bridge) Molded IGBT Unit mA µA V V pF µs 1MBC05D-060, 1MBG05D-060 / IGBT+FWD Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time FWD forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Characteristics Min. Typ. – – 5.5 – – – – – – – – – – – – – – 400 85 15 – – – – – – Conditions Max. 1.0 20 8.5 3.0 – – – 1.2 0.6 1.0 0.35 3.0 0.3 VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=5mA VGE=15V, IC=5A VGE=0V V CE=10V f=1MHz VCC=300V, IC=5A VGE=±15V RG=330 ohm (Half Bridge) IF=5A, VGE=0V IF=5A, VGE=-10V, di/dt=100A/µs mA µA V V pF Unit µs V µs Thermal resistance characteristics 1MBC05-060 / IGBT Item Thermal resistance Symbol Rth(j-c) Characteristics Min. Typ. – – Conditions Max. 2.50 IGBT °C/W Unit 1MBC05D-060, 1MBG05D-060 / IGBT+FWD Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Characteristics Min. Typ. – – – – Conditions Max. 2.50 5.00 IGBT FWD °C/W °C/W Unit Outline drawings, mm 1MBC05-060, 1MBC05D-060 TO-220AB 1MBG05D-060 T pack-S (SMD type) 1MBC05-060, 1MBC05D-060, 1MBG05D-060 Characteristics 1MBC05-060,1MBC05D-060,1MBG05D-060 Collector current vs. Collector-Emitter voltage Tj=25°C 10 Molded IGBT Collector current vs. Collector-Emitter voltage Tj=125°C 8 Collector current : Ic [A] Collector current : Ic [A] 6 4 2 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C 10 10 Collector-Emitter vs. Gate-Emitter voltage Tj=125°C Collector-Emitter voltage : VCE [V] 8 Collector-Emitter voltage : VCE [V] 8 6 6 4 4 2 2 0 0 5 10 15 20 Gate-Emitter voltage : VGE [V] 0 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=330 ohm, VGE=±15V, Tj=25°C 1000 1000 Switching time vs. Collector current Vcc=300V, RG=330 ohm, VGE=±15V, Tj=125°C Switching time : ton, tr, toff, tf [n sec.] 100 Switching time : ton, tr, toff, tf [n sec.] 100 10 0 2 4 Collector current : Ic [A] 6 8 10 Collector current : Ic [A] IGBT Module Characteristics 1MBC05-060,1MBC05D-060,1MBG05D-060 Switching time vs. RG Vcc=300V, Ic=5A, VGE=±15V, Tj=25°C Switching time vs. RG Vcc=300V, Ic=5A, VGE=±15V, Tj=125°C Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 1000 1000 100 100 10 0 500 1000 1500 2000 2500 Gate resistance : RG [ohm] 10 0 500 1000 1500 2000 2500 Gate resistance : RG [ohm] Dynamic input characteristics 500 Capacitance vs. Collector-Emitter voltage 25 1000 Tj=25°C Tj=25°C Collector-Emitter voltage : VCE [V] 400 Capacitance : Cies, Coes, Cres [nF] 20 300 15 200 10 Gate-Emitter voltage : VGE [V] 100 10 100 5 0 0 5 10 15 20 Gate charge : Qg [nC] 25 30 0 1 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35 Reversed biased safe operating area < +VGE=15V, -VGE = 15V, Tj < 125°C, RG > 330 ohm = = 12 80 Typical short circuit capability Vcc=400V, RG=330 ohm, Tj=125°C 80 10 Short circuit time current : Isc [A] 60 60 Collector current : Ic [A] 8 6 40 40 4 20 2 20 0 0 100 200 300 400 500 600 700 0 5 10 15 20 25 0 Collector-Emitter voltage : VCE [V] Short circuit time : tsc [µs] IGBT Module Characteristics 1MBC05-060,1MBC05D-060,1MBG05D-060 Transient thermal resistance Thermal resistance : Rth (j-c) [°C/W] 10-4 10-3 10-2 Pulse width : PW [sec.] 10-1 100 1MBC05D-060,1MBG05D-060 Reverse recovery time vs. Forward current 500 -di/dt=15A / µsec 1.2 Reverse recovery current vs. Forward current -di/dt=15A / µsec 400 1.0 reverse recovery time : trr [nsec] 300 reverse recovery current : Irr [A] 0.8 0.6 200 0.4 100 0.2 0 0 2 4 Forward current : IF [A] 6 8 0 Forward current : IF [A] Forward current vs. Foeward voltage Reverse recovery time characteristics vs. -di/dt IF=5A, Tj=125°C 2.5 2.0 reverse recovery time : trr [nsec] 1.5 Forward current : IF [A] 1.0 0.5 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 -di/dt 60 [ A / µsec ] 80 100 Forward voltage : VF [V] reverse recovery current : Irr [A]