1MBH08D-120_09

1MBH08D-120 1200V / 8A Molded Package Features · Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up Molded IGBT Outline drawings, mm TO-3PL Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=105°C 1ms Tc=25°C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC105 Icp PC PC Tj Tstg Rating 1200 ±20 15 8 39 135 85 +150 -40 to +150 70 Unit V V A A A W W °C °C N·m Equivalent Circuit Schematic IGBT C:Collector + FWD G:Gate E:Emitter Electrical characteristics (at Tc=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Switching Time Turn-on time Turn-off time FWD forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf ton tr toff tf VF trr Characteristics Min. Typ. – – 5.5 – – – – – – – – – – – – – – – – – – 1000 160 60 – – – – 0.16 0.11 0.30 – – – Conditions Max. 1.0 20 8.5 3.5 – – – 1.2 0.6 1.5 0.5 – – – 0.50 3.0 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=8mA VGE=15V, IC=8A VGE=0V V CE=10V f=1MHz VCC=600V, IC=8A VGE=±15V RG=200 ohm (Half Bridge) VCC=600V, IC=8A VGE=+15V RG=20 ohm (Half Bridge) IF=8A IF=8A, VGE=-10V, VR=200V, di/dt=100A/μs mA μA V V pF Unit μs μs V μs Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Characteristics Min. Typ. – – – – Conditions Max. 0.92 1.47 IGBT FWD °C/W °C/W Unit 1MBH08D-120 Characteristics Collector current vs. Collector-Emitter voltage Tj=25°C Molded IGBT Collector current vs. Collector-Emitter voltage Tj=125°C Collector current : IC (A) Collector current : IC (A) Collector-Emitter voltage : VCE (V) Collector-Emitter voltage : VCE (V) Collector-Emitter voltage vs. Gate-Emitter voltage Tj=25°C Collector-Emitter voltage : VCE (V) Collector-Emitter voltage vs. Gate-Emitter voltage Tj=125°C Gate-Emitter voltage : VGE (V) Collector-Emitter voltage : VCE (V) Gate-Emitter voltage : VGE (V) Switching time vs. Collector current VCC=600V, RG=20Ω, VGE=±15V, Tj=25°C Switching time vs. Collector current VCC=600V, RG=20Ω, VGE=±15V, Tj=125°C Switching time : tf,toff, tr, ton, trr2 (nsec) Collector current : IC (A) Switching time : tf,toff, tr, ton, trr2 (nsec) Collector current : IC (A) 1MBH08D-120 Characteristics Switching time vs. RG VCC=600V, IC=8A, VGE=±15V, Tj=25°C IGBT Module Switching time vs. RG VCC=600V, IC=8A, VGE=±15V, Tj=125°C Switching time : tf,toff, tr, ton, trr2 (nsec) Switching time : tf,toff, tr, ton, trr2 (nsec) Gate resistance : RG (Ω) Gate resistance : RG (Ω) Dynamic input characteristics Tj=25°C Capacitance : Cies, Coes, Cres (nF) Capacitance vs. Collector-Emitter voltage Tj=25°C Collector-Emitter voltage : VCE (V) Gate charge : Qg (nc) Gate-Emitter voltage : VGE (V) Collector-Emitter voltage : VCE (V) Reverse Biased Safe Operating Area > +VGE=15V, -VGE < 15V, Tj< 125°C, RG = 20Ω = = Typical short circuit capability VCC=800V, RG=20Ω, Tj=125°C, Short circuit current : ISC (A) Collector current : IC (A) Collector-Emitter voltage : VCE (V) Gate voltage : VGE (V) Short circuit time : tSC (μs) 1MBH08D-120 Characteristics Reverse recovery time vs. Forward current VR=200V, -di/dt=100A/μsec IGBT Module Reverse recovery current vs. Forward current VR=200V, -di/dt=100A/μsec Reverse recovery time : trr [nsec] Forward current : IF (A) Reverse recovery current : Irr [A] Forward current : IF (A) Forward Voltage vs. Forward current Reverse recovery chracteristics vs. -di/dt IF=8A, Tj=125°C Reverse recovery current : Irr [A] Reverse recovery time : trr [nsec] Forward current : IF [A] Forward voltage : VF (V) -di/dt [A/μsec] Transient thermal resistance Thermal resistance : Rth(j-c) [°C/W] Pulse width : PW (sec)