1MBH10D-120_09

1MBH10D-120 1200V / 10A Molded Package Features ・Small molded package ・Low power loss ・Soft switching with low switching surge and noise ・High reliability, high ruggedness (RBSOA, SCSOA etc.) ・Comprehensive line-up Molded IGBT Applications ・Inverter for Motor drive ・AC and DC Servo drive amplifier ・Uninterruptible power supply Maximum Ratings and Characteristics Absolute Maximum Ratings (Tc=25°C) Items Collector-Emitter Voltage Gate-Emitter Voltage Collector Current IGBT Max. Power Dissipation FWD Max. Power Dissipation Operating Temperature Storage Temperature Mounting Screw Torque DC 1ms TC=25℃ TC=105℃ TC=25℃ Symbols VCES VGES Ic25 Ic110 Icp Pc Pc Tj Tstg － Ratings 1200 ±20 18 10 48 155 105 +150 -40 to +150 70 Units V V A A A W W ℃ ℃ N・cm Outline drawings, mm Electrical Characteristics (at Tc=25°C unless otherwise specified) Items Zero gate voltage Collector Current Gate-Emitter leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Switching Time Turn-on time Turn-off time FWD forward voltage drop Reverse recovery time Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf ton tr toff tf VF trr Characteristics min. typ. max. 1.0 － － 20 － － 5.5 8.5 － 3.5 － － 1200 － － 250 － － 80 － － 1.2 － － 0.6 － － 1.5 － － 0.5 － － 0.16 － － 0.11 － － 0.30 － － 0.50 － － 3.0 － － － － 0.35 Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, Ic = 10mA VGE = 15V, Ic = 10A VGE = 0V VCE = 10V f = 1MHz Vcc = 600V Ic = 10A VGE = ±15V RG = 160Ω (Half Bridge) Vcc = 600V Ic = 10A VGE = +15V RG = 16Ω (Half Bridge) IF = 10A IF = 10A, VGE = -10V VR = 200V di/dt = 100A/μs Units mA μA V V pF Equivalent circuit μs V μs Thermal resistance Characteristics Items Thermal resistance Symbols Rth(j-c) Rth(j-c) Characteristics Conditions min. typ. max. 0.80 IGBT － － 1.19 FWD － － Units ℃/W 1 1MBH10D-120 Characteristics Collector current vs. Collector-Emitter voltage Tj = 25℃ Molded IGBT Collector current vs. Collector-Emitter voltage Tj = 125℃ Collector Current : Ic [A] Collector-Emitter voltage : VCE [V] Collector Current : Ic [A] Collector-Emitter voltage : VCE [V] Collector-Emitter voltage vs. Gate-Emitter Voltage Tj = 25℃ Collector-Emitter voltage : VCE [V] Collector-Emitter voltage vs. Gate-Emitter Voltage Tj = 125℃ Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=16Ω, VGE=±15V, Tj=25℃ Switching time : ton, tr, toff, tf [nsec] Switching time vs. Collector current Vcc=600V, RG=16Ω, VGE=±15V, Tj=125℃ Switching time : ton, tr, toff, tf [nsec] Collector current : Ic [A] Collector current : Ic [A] 2 1MBH10D-120 Characteristics Switching time vs. RG Vcc=600V, IC=10A, VGE=±15V, Tj=25℃ Switching time : ton, tr, toff, tf [nsec] Molded IGBT Switching time vs. RG Vcc=600V, IC=10A, VGE=±15V, Tj=125℃ Switching time : ton, tr, toff, tf [nsec] Gate resistance : RG [Ω] Gate resistance : RG [Ω] Dynamic input characteristics Tj=25℃ Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage Tj=25℃ Capacitance : Coes, Cres, Cies [pF] Gate charge : Qg [nQ] Gate-Emitter voltage : VGE [V] Collector-Emitter voltage : VCE [V] Reverse Biased Safe Operating Area +VGE=15V, -VGE≦15V, Tj=125℃, RG≧16Ω Typical short circuit capability Vcc=800V, RG=16Ω, Tj=125℃ Short circuit current : Isc [A] Collector-Emitter voltage : VCE [V] Gate voltage : VGE [V] 3 Short circuit time : tsc [μs] Collector current : Ic [A] 1MBH10D-120 Characteristics Reverse recovery time vs. Forward current VR=200V, -di/dt=100A/μsec Reverse recovery time : trr [nsec] Molded IGBT Reverse recovery current vs. Forward current VR=200V, -di/dt=100A/μsec Reverse recovery current : Irr [A] Forward current : IF [A] Forward current : IF [A] Forward voltage vs. Forward current Reverse recovery chracteristics vs. -di/dt IF =10A, Tj=125℃ Reverse recovery time : trr [nsec] Forward Voltage : VF [V] -di/dt [A/μsec] Transient thermal resistance Thermal resistance : Rth(j-c) [℃/W] Pulse width : Pw [sec] 4 Reverse recovery current : Irr [A] Forward Current : IF [A] 1MBH10D-120 Molded IGBT WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any p atent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing p roduct quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the foll owing electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traf fic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Safety devices • Emergency equipment for responding to disasters and anti -burglary devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any mea ns without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 5