1MBH25-120,1MBH25D-120, 1200V / 25A Molded Package
Features
· Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up
Molded IGBT
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified) 1MBH25-120 / IGBT
Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=100°C 1ms Tc=25°C Max. power dissipation(IGBT) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC Tj Tstg Rating 1200 ±20 38 25 114 310 +150 -40 to +150 70 Unit V V A A A W °C °C N·cm
Equivalent Circuit Schematic
IGBT
C:Collector
G:Gate
E:Emitter
1MBH25D-120 / IGBT+FWD
Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=100°C 1ms Tc=25°C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC PC Tj Tstg Rating 1200 ±20 38 25 114 310 145 +150 -40 to +150 70 Unit V V A A A W W °C °C N·cm IGBT + FWD
C:Collector
G:Gate
E:Emitter
1MBH25-120, 1MBH25D-120
Electrical characteristics (at Tj=25°C unless otherwise specified) 1MBH25-120 / IGBT
I tem Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf Characteristics Min. Typ. – – 5.5 – – – – – – – – – – – – 2500 500 200 – – – – Conditions Max. 1.0 20 8.5 3.5 – – – 1.2 0.6 1.5 0.5 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=25mA VGE=15V, IC=25A VGE=0V VCE=10V f=1MHz VCC=600V IC=25A VGE=±15V RG=82 ohm (Half Bridge)
Molded IGBT
Unit mA µA V V pF
µs
1MBH25D-120 / IGBT+FWD
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time FWD forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Characteristics Min. Typ. – – 5.5 – – – – – – – – – – – – – – 2500 500 200 – – – – – – Conditions Max. 1.0 20 8.5 3.5 – – – 1.2 0.6 1.5 0.5 3.0 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=25mA VGE=15V, IC=25A VGE=0V V CE=10V f=1MHz VCC=600V, IC=25A VGE=±15V RG=82 ohm (Half Bridge) IF=25A, VGE=0V IF=25A, VGE=-10V, di/dt=100A/µs mA µA V V pF Unit
µs
V µs
Thermal resistance characteristics 1MBH25-120 / IGBT
Item Thermal resistance Symbol Rth(j-c) Characteristics Min. Typ. – – Conditions Max. 0.40 IGBT °C/W Unit
1MBH25D-120 / IGBT+FWD
Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Characteristics Min. Typ. – – – – Conditions Max. 0.40 0.86 IGBT FWD °C/W °C/W Unit
Outline drawings, mm
1MBH25-120, 1MBH25D-120 TO-3PL
1MBH25-120, 1MBH25D-120
Characteristics
1MBH25-120,1MBH25D-120 Collector current vs. Collector-Emitter voltage Tj=25°C
50 50
Molded IGBT
Collector current vs. Collector-Emitter voltage Tj=125°C
40
Collector current : Ic [A] Collector current : Ic [A]
40
30
30
20
20
10
10
0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage Tj=25°C
10 10
Collector-Emitter vs. Gate-Emitter voltage Tj=125°C
Collector-Emitter voltage : VCE [V]
8
Collector-Emitter voltage : VCE [V]
8
6
6
4
4
2
2
0 0 5 10 15 20 Gate-Emitter voltage : VGE [V]
0 0 5 10 15 20 Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current Vcc=600V, RG=82 ohm, VGE=±15V, Tj=25°C
Switching time vs. Collector current Vcc=600V, RG=82 ohm, VGE=±15V, Tj=125°C
1000
Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.]
1000
100
100
10 0 10 20 Collector current : Ic [A] 30 40
10 0 10 20 Collector current : Ic [A] 30 40
1MBH25-120, 1MBH25D-120
Characteristics
1MBH25-120,1MBH25D-120 Switching time vs. RG Vcc=600V, Ic=25A, VGE=±15V, Tj=25°C
10000
IGBT Module
Switching time vs. RG Vcc=600V, Ic=25A, VGE=±15V, Tj=125°C
10000
Switching time : ton, tr, toff, tf [n sec.]
1000
Switching time : ton, tr, toff, tf [n sec.]
1000
100 100 Gate resistance : RG [ohm]
100 100 Gate resistance : RG [ohm]
Dynamic input characteristics
1000
Tj=25°C
25
10000
Capacitance vs. Collector-Emitter voltage Tj=25°C
Collector-Emitter voltage : VCE [V]
Capacitance : Cies, Coes, Cres [nF]
800
20
600
15
400
10
Gate-Emitter voltage : VGE [V]
1000
100
200
5
0 0 50 100 150 200 250 Gate charge : Qg [nC] 300 350 400
0
10 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35
Reversed biased safe operating area < > +VGE=15V, -VGE = 15V, Tj < 125°C, RG = 82 ohm =
600 50 500 40
Typical short circuit capability Vcc=800V, RG=82 ohm, Tj=125°C
60
50
Short circuit time current : Isc [A]
Collector current : Ic [A]
400
40
30
300
30
20
200
20
10
100
10
0
0
0
0
200
400
600
800
1000
1200
5
10
Collector-Emitter voltage : VCE [V]
15 Gate voltage : VGE [V]
20
25
Short circuit time : tsc [µs]
1MBH25-120, 1MBH25D-120
Characteristics
1MBH25-120,1MBH25D-120 Transient thermal resistance
IGBT Module
Thermal resistance : Rth (j-c) [°C/W]
101
100
10-1
10-2 10-4 10-3 10-2 Pulse width : PW [sec.] 10-1 100
1MBH25D-120 Reverse recovery time vs. Forward current -di/dt=75A / µsec
800
20
Reverse recovery current vs. Forward current -di/dt=75A / µsec
600
reverse recovery time : trr [nsec]
15
400
reverse recovery current : Irr [A]
10
200
5
0 0 10 20 30 40 Forward current : IF [A]
0
0
10
20 Forward current : IF [A]
30
40
Forward current vs. Foeward voltage
1000
50
Reverse recovery time characteristics vs. -di/dt IF=25A, Tj=125°C
25
800
40
20
reverse recovery time : trr [nsec]
600
15
30
Forward current : IF [A]
20
400
10
10
200
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 0
0 50 100 150 -di/dt 200 250 300 [ A / µsec ]
Forward voltage : VF [V]
reverse recovery current : Irr [A]