1MBH50D-060S_04

1MBH50D-060S 600V / 50A Molded Package Features · Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up Molded IGBT Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=100°C 1ms Tc=25°C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC PC Tj Tstg Rating 600 ±20 75 50 150 230 150 +150 -40 to +150 58.8 to 78.4 Unit V V A A A W W °C °C N·cm Equivalent Circuit Schematic IGBT + FWD C:Collector G:Gate E:Emitter Electrical characteristics (at Tc=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton * tr * trr2 toff tf ton * tr * trr2 toff tf VF trr Characteristics Min. Typ. – – 4.0 – – – – – – – – – – – – – – – – – – 5.0 2.4 2500 240 130 0.15 0.09 0.03 0.50 0.10 0.15 0.09 0.03 0.50 0.10 2.0 0.06 Conditions Max. 1.0 10 6.0 2.9 – – – – – – 0.62 0.17 – – – 0.62 0.17 2.5 0.10 VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=50mA VGE=15V, IC=50A VGE=0V V CE=25V f=1MHz VCC=300V, I C=50A VGE=±15V RG=33 ohm (Half Bridge) Inductance Load VCC=300V, I C=50A VGE=+15V RG=8 ohm (Half Bridge) Inductance Load IF=50A, VGE=0V IF=50A, VGE=-10V, VR=300V, di/dt=100A/µs mA µA V V pF Unit µs Turn-off time Switching Time Turn-on time µs Turn-off time FWD forward on voltage Reverse recovery time V µs *Turn-on characteristics include trr2. See a figure in next page. Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Characteristics Min. Typ. – – – – Conditions Max. 0.54 0.83 IGBT FWD °C/W °C/W Unit 1MBH50D-060S Outline drawings, mm TO-3PL Molded IGBT Gate Collector Emitter Switching waveform (Inductance load) Mesurement circuit 1MBH50D-060S Characteristics Collector current vs. Collector-Emitter voltage Tj=25°C Molded IGBT Collector current vs. Collector-Emitter voltage Tj=125°C Collector Current : IC (A) Collector Current : IC (A) Collector-Emitter Voltage : VCE (V) Collector-Emitter Voltage : VCE (V) Collector-Emitter voltage vs. Gate-Emitter voltage Tj=25°C Collector-Emitter Voltage : VCE (V) Collector-Emitter voltage vs. Gate-Emitter voltage Tj=125°C Collector-Emitter Voltage : VCE (V) Gate-Emitter Voltage : VGE (V) Gate-Emitter Voltage : VGE (V) Switching time vs. Collector current VCC=300V, RG=8Ω, VGE=+15V, Tj=125°C Switching time vs. Collector current VCC=300V, RG=33Ω, VGE=±15V, Tj=125°C Switching time : tf,toff, tr, ton, trr2 (nsec) Collector current : IC (A) Switching time : tf,toff, tr, ton, trr2 (nsec) Collector current : IC (A) 1MBH50D-060S Characteristics Switching time vs. RG VCC=300V, IC=50A, VGE=+15V, Tj=125°C Switching time vs. RG IGBT Module VCC=300V, IC=50A, VGE=±15V, Tj=125°C Switching time : tf,toff, tr, ton, trr2 (nsec) Gate resistance : RG (Ω) Switching time : tf,toff, tr, ton, trr2 (nsec) Gate resistance : RG (Ω) Dynamic input characteristics Tj=25°C Capacitance : Cies, Coes, Cres (nF) Capacitance vs. Collector-Emitter voltage Tj=25°C Collector-Emitter voltage : VCE (V) Gate-Emitter voltage : VGE (V) Collector-Emitter Voltage : VCE (V) Gate charge : Qg (nc) Reverse Biased Safe Operating Area RG=8Ω, +VGE