1MBI1200U4C-120

1MBI1200U4C-120 IGBT MODULE (U series) 1200V / 1200A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Ic pulse Conditions Maximum ratings 1200 ±20 1600 1200 3200 2400 1200 2400 7350 150 -40 to +125 2500 5.75 10 2.5 Units V V Continuous 1ms Tc=25°C Tc=80°C Tc=25°C Tc=80°C A -Ic -Ic pulse 1ms Collector power dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. Mounting (*2) Screw torque Main Terminals (*2) Sense Terminals (*2) W °C °C VAC N·m Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Symbols ICES IGES VGE (th) VCE (sat) (main terminal) VCE (sat) (chip) Cies ton tr toff tf VF (main terminal) VF (chip) trr R lead Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 1200mA VGE = 15V IC = 1200A VGE Tj=25°C Tj=125°C Tj=25°C Tj=125°C = 0V, VCE = 10V, f = 1MHz Characteristics min. typ. max. 1.0 2400 5.5 6.5 7.5 2.08 2.25 2.28 1.90 2.05 2.10 135 0.90 0.50 0.80 0.20 1.83 2.00 1.93 1.65 1.80 1.75 0.35 0.15 Characteristics min. typ. max. 0.017 0.030 0.006 Units mA nA V V nF µs VCC = 600V, IC = 1200A VGE = ±15V, Tj = 125°C Rgon = 2Ω, Rgoff = 1Ω VGE = 0V IF = 1200A IF = 1200A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Forward on voltage Reverse recovery time Lead resistance, terminal-chip V µs mΩ Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance (1device) Symbols Rth(j-c) Rth(c-f) Conditions IGBT FWD with Thermal Compound (*3) Units °C/W Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 1MBI1200U4C-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C ,chip VGE=20 15V 12V Col l ector current : I c [ A ] IGBT Modules 2800 2400 Col l ector current : I c [ A ] 2000 1600 1200 800 400 2800 2400 2000 1600 1200 800 400 Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C, chip VGE=20V 15V 12V 10V 10V 8V 1 .0 2 .0 3 .0 4 .0 5 .0 8V 1 .0 2 .0 3 .0 4 .0 5 .0 0 0 .0 0 0 .0 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 2800 2400 Col l ector current : I c [ A ] 2000 1600 1200 800 400 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=+15V,chip Col l ector - Emi tter vol tage : V CE [ V ] Tj=25°C Tj=125°C Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C ,chip 10 8 6 4 Ic=2400A Ic=1200A Ic=600A 2 0 0 .0 0 0 .5 1 .0 1 .5 2 .0 2 .5 3 .0 3 .5 4 .0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] 1000 Capaci tance : Ci es, Coes, Cres [ nF ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Collector-Emitter voltage:VCE[V] 1000 800 600 400 200 0 Dynamic Gate charge (typ.) Tj= 25°C 25 20 Gate-Emitter voltage:VGE[V] Cies 100 VCE VGE 15 10 5 0 6000 10 Cres Coes 1 0 10 20 30 Collector-Emitter voltage : VCE [V] 0 1000 2000 3000 4000 5000 Gate charge : Qg [ nC ] 2 1MBI1200U4C-120 IGBT Modules 1 .4 Swi tchi ng ti me : ton, tr, tof f , tf [ us ] 1 .2 1 .0 0 .8 0 .6 0 .4 0 .2 0 .0 Vcc=600V, VGE=±15V, Rgon=2Ω, Rgoff=1Ω, Tj=125°C Swi tchi ng ti me : ton, tr, tof f , tf [ us ] Switching time vs. Collector current (typ.) Switching time vs. Gate resistance (typ.) 6 .0 5 .0 4 .0 3 .0 2 .0 1 .0 0 .0 tf 0 2 4 6 8 10 12 14 16 18 tr toff Vcc=600V, Ic=1200A,VGE=±15V, Tj= 125°C ton ton toff tr tf 0 400 800 1200 1600 2000 Collector current : Ic [ A ] Gate resistance : Rg [ Ω ] Vcc=600V, VGE=±15V, Rgon=2Ω, Rgoff=1Ω, Tj= 125°C 400 Swi tchi ng l oss : Eon, Eof f , Err [ mJ/pul se ] Swi tchi ng l oss : Eon, Eof f , Err [ mJ/pul se ] 350 300 250 200 150 100 50 0 0 400 800 1200 1600 2000 Collector current : Ic [ A ] , Forward current : IF [ A ] Err Eoff Eon Switching loss vs. Collector current (typ.) Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=1200A,VGE=±15V, Tj= 125°C Eon 1000 900 800 700 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 Gate resistance : Rg [ Ω ] Err Eoff Reverse bias safe operating area (max.) 2800 2400 Col l ector current : I c [ A ] 2000 1600 1200 800 400 0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ] ± VGE=15V ,Tj = 125°C / chip 3 1MBI1200U4C-120 IGBT Modules 2800 2400 Forwa rd current : I F [ A ] 2000 1600 1200 800 400 Forward current vs. Forward on voltage (typ.) chip Tj=25°C Tj=125°C Reverse recovery current : I rr [ A ] 900 800 700 600 500 400 300 200 100 0 Vcc=600V, VGE=±15V, Rgon=2Ω, Tj=125°C Irr Reverse recovery characteristics (typ.) 1 .8 1 .6 1 .4 1 .2 1 .0 0 .8 Reverse recovery ti me : trr [ us] trr 0 .6 0 .4 0 .2 0 0 .0 0 .5 1 .0 1 .5 2 .0 2 .5 3 .0 3 .5 0 400 800 1200 1600 0 .0 2000 Forward on voltage : VF [ V ] Forward current : IF [ A ] 0.100 Thermal resi stanse : Rth(j -c) [ °C/W ] Transient thermal resistance (max.) FWD IGBT 0.010 0.001 0.001 0.010 0.100 1.000 Pulse width : Pw [ sec ] 4 1MBI1200U4C-120 IGBT Modules Outline Drawings, mm Equivalent Circuit Schematic C sense collector C C gate G E E E sense emitter 5 1MBI1200U4C-120 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 6