1MBI200NK-060

IGBT MODULE ( N series ) n Outline Drawing n Features • Square RBSOA • Low Saturation Voltage • Overcurrent Limiting Function (~3 Times Rated Current) n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *1 Ratings 600 ± 20 200 400 200 400 780 +150 -40 ∼ +125 2500 3.5 3.5 Units V V A W °C °C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Reverse Currrent ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr IRRM Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=200mA VGE=15V IC=200A VGE=0V VCE=10V f=1MHz VCC=300V IC=200A VGE=± 15V RG=9.1Ω IF=200A VGE=0V IF=200A VR=600V Min. Typ. Max. 2.0 30 7.5 2.8 Units mA µA V V pF 1.2 0.6 1.0 0.35 3.0 300 2.0 4.5 13200 2930 1330 0.6 0.2 0.6 0.2 µs V ns mA • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.16 0.35 Units °C/W 0.025 Collector current vs. Collector-Emitter voltage T j=25°C 500 V GE=20V,15V,12V 400 400 C Collector current vs. Collector-Emitter voltage T j=125°C 500 V GE=20V,15V,12V [A] Collector current : I C 300 Collector current : I [A] 10V 300 10V 200 200 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [ V] 6 100 8V 0 0 1 2 3 4 5 6 Collector-Emitter voltage : V CE [ V] Collector-Emitter vs. Gate-Emitter voltage T j=25°C 10 10 CE Collector-Emitter vs. Gate-Emitter voltage T j=125°C [V] CE 8 [V] 8 Collector-Emitter voltage : V 6 Collector-Emitter voltage : V 6 4 IC= 400A 200A 100A 4 I C= 400A 2 2 200A 100A 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] Switching time vs. Collector current V CC =300V, R G=9.1 Ω , V GE =±15V, Tj=25°C 1000 1000 Switching time vs. Collector current V CC =300V, R G =9.1 Ω , V GE =±15V, Tj=125°C , t r , t off , t f [nsec] , t r , t off , t f [nsec] t on t off tr tf 100 t off t on tr tf on on Switching time : t 10 0 100 200 300 Collector current : I C [ A] Switching time : t 100 10 0 100 200 300 Collector current : I C [ A] Switching time vs. R G V CC =300V, I C=200A, V GE =±15V, Tj=25°C 500 1000 t on t off Dynamic input characteristics T j=25°C 25 , t r , t off , t f [nsec] Collector-Emitter voltage : V tr tf 100 CE 400 300V 20 400V 15 300 Switching time : t 200 10 100 5 10 1 10 Gate resistance : R G [ Ω ] 0 0 200 400 600 800 1000 Gate charge : Q G [ nC] 0 1200 Forward current vs. Forward voltage V GE =OV 500 T j=125°C 25°C rr Reverse recovery characteristics t rr , I rr v s. I F [A] [A] 400 F rr [nsec] I rr 1 25°C t rr 1 25°C 100 I rr 2 5°C t rr 2 5°C Reverse recovery current : I Forward current : I 300 200 100 0 0 1 2 3 Forward voltage : V F [ V] 4 Reverse recovery time :t 10 0 100 200 Forward current : I F [ A] 300 Reversed biased safe operating area Transient thermal resistance 2000 Diode +V GE =15V, -V GE < 15V, T j< 125°C, R G > 9.1 Ω [°C/W] 1600 IGBT 0,1 th(j-c) C [A] Collector current : I 1200 SCSOA (non-repetitive pulse) Thermal resistance : R 800 400 0,01 RBSOA (Repetitive pulse) 0 0 ,001 0,01 0,1 1 0 100 200 300 400 500 600 Pulse width : PW [sec] Collector-Emitter voltage : V CE [ V] Gate Emitter Voltage : V GE [V] on [V] V CC =200V Switching loss vs. Collector current V CC =300V, R G =9.1 Ω , V GE =±15V 20 Capacitance vs. Collector-Emitter voltage T j=25°C , E off , E rr [mJ/cycle] , C oes , C res [nF] E off 1 25°C 15 E off 2 5°C 10 E on 1 25°C E on 2 5°C 5 E rr 1 25°C E rr 2 5°C 0 100 200 300 400 10 C ies on Switching loss : E Capacitance : C ies C oes 1 C res 0 C ollector Current : I C [ A] 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [ V] Fuji Electric GmbH Lyoner Straße 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com