IGBT MODULE ( N series ) n Features
• Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)
n Outline Drawing
n Applications
• High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings
Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Terminals *3 Ratings 600 ± 20 600 1200 600 1200 2000 +150 -40 ∼ +125 2500 3.5 4.5 1.7 Units V V A W °C °C V Nm
n Equivalent Circuit
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) *3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)
• Electrical Characteristics
Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time
( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=600mA VGE=15V IC=600A VGE=0V VCE=10V f=1MHz VCC=300V IC=600A VGE=± 15V RG=2.7Ω IF=600A VGE=0V IF=600A Min. Typ. Max. 4.0 60 7.5 2.8 Units mA µA V V pF 1.2 0.6 1.0 0.35 3.0 300
4.5 39600 8800 4000 0.6 0.2 0.6 0.2
µs V ns
• Thermal Characteristics
Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.063 0.11 Units °C/W
0.0125
Collector current vs. Collector-Emitter voltage T j=25°C 1400 V GE =20V,15V,12V 1200 1200
C
Collector current vs. Collector-Emitter voltage T j=125°C 1400 V GE =20V,15V,12V,
C
[A]
1000 10V 800 600 400 200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [ V]
[A]
1000 10V 800 600 400 200 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [ V] 8V Collector-Emitter vs. Gate-Emitter voltage T j=25°C
Collector current : I
Collector current : I
Collector-Emitter vs. Gate-Emitter voltage T j=125°C
10
10
[V]
CE
8
CE
[V]
8 6
Collector-Emitter voltage :V
Collector-Emitter voltage V
6
4
IC= 1200A
4
IC= 1200A
2
600A 300A
2
600A 300A
0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V]
0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V]
Switching time vs. Collector current V CC =300V, R G =2.7 Ω , V GE ±15V, T j=25°C 1000 t on 1000 t off tr tf 100
Switching time vs. Collector current V CC =300V, R G =2.7 Ω , V GE =±15V, Tj=125°C t off t on tr tf
[nsec]
on, t r, t off, t f
on, t r, t off, t f
[nsec] Switching time : t
100 10
Switching time : t
10 0 200 400 600 800 1000 Collector current : I C [ A]
0
200
400
600
800
1000
Collector current : I C [ A]
Switching time vs. R G V CC =300V, I C = 6 0 0 A , V GE = ± 1 5 V , T j = 2 5 ° C 500 ton toff
Dynamic input characteristics T j= 2 5 ° C 25 V CC = 2 0 0 V 300V 400V
on, t r, t off, t f [nsec]
1000
[V]
400
CE
15
tf 100
200
10
100
5
10 1 Gate resistance : R G [ Ω ] Forward current vs. Forward voltage V GE = O V 1400 10
0 0 500 1000 1500 2000 2500 3000
0 3500
G a t e c h a r g e : Q G [ nC] Reverse recovery characteristics t rr, I rr v s. I F I rr 1 2 5 ° C
[A]
1200
[nsec]
T j= 1 2 5 ° C
25°C
rr
[A]
I rr 2 5 ° C t rr 1 2 5 ° C
Reverse recovery current : I
Forward current : I
800 600 400 200 0 0 1 2 Forward voltage : V F [ V] 3 4
Reverse recovery time
:t
1000
F
rr
100
t rr 2 5 ° C
0
200
400
600
800
1000
Forward current : I F [ A] Reversed biased safe operating area
Transient thermal resistance 6000 Diode
+ V GE = 1 5 V , - V GE < 1 5 V , T j < 1 2 5 ° C , R G > 2.7 Ω
[°C/W]
C
[A]
0,1
5000
th(j-c)
IGBT
Collector current : I
4000 SCSOA (non-repetitive pulse) 3000
Thermal resistance : R
0,01
2000
1000 RBSOA (Repetitive pulse) 0 0 ,001 0,01 0,1 1 0 100 200 300 400 500 600 Pulse width : PW [sec] Collector-Emitter voltage : V C E [ V]
Gate-Emitter Voltage : V
tr
Collector-Emitter voltage : V
300
Switching time : t
GE
[V]
20
Switching loss vs. Collector current V CC=300V, R G =2.7 Ω , V GE =±15V
60 100
Capacitance vs. Collector-Emitter voltage T j=25°C
, E off , E rr [mJ/cycle]
, C oes , C res [nF]
50
E off 1 25°C
40
C ies
E off 2 5°C
30
ies
on
E on 1 25°C
20
10
Switching loss : E
E on 2 5°C
Capacitance : C
C oes C res
10
E rr 1 25°C E rr 2 5°C
0 0 200 400 600 800 1000
1 0 5 10 15 20 25 30 35
C ollector Current : I C [ A]
Collector-Emitter Voltage : V CE [ V]
Fuji Electric GmbH
Lyoner Straße 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56
Fuji Electric (UK) Ltd.
Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60
P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com
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