2MBI100NE-120

IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) n Outline Drawing n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 1200 ± 20 100 200 100 200 780 +150 -40 ∼ +125 2500 3.5 4.5 Units V V A W °C °C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=100mA VGE=15V IC=100A VGE=0V VCE=10V f=1MHz VCC=600V IC=100A VGE=± 15V RG=9.1Ω IF=100A VGE=0V IF=100A Min. Typ. Max. 2.0 30 7.5 3.3 Units mA µA V V pF 1.2 0.6 1.5 0.5 3.0 350 4.5 16000 5800 5160 0.65 0.25 0.85 0.35 µs V ns • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.16 0.43 Units °C/W 0.025 Collector current vs. Collector-Emitter voltage T j=25°C 250 V GE =20V,15V,12V,10V 200 200 250 Collector current vs. Collector-Emitter voltage T j=125°C V GE =20V,15V,12V,10V [A] C C [A] Collector current : I 150 150 100 100 8V 50 8V 50 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [ V] 0 0 1 2 3 4 5 C ollector-Emitter voltage : V CE [ V] Collector-Emitter vs. Gate-Emitter voltage T j=25°C 10 10 Collector current : I Collector-Emitter vs. Gate-Emitter voltage T j=125°C [V] CE Collector-Emitter voltage :V 6 Collector-Emitter voltage V CE 8 [V] 8 6 4 IC= 200A 100A 4 IC= 200A 100A 50A 2 50A 2 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] Switching time vs. Collector current V CC =600V, R G =9.1 Ω , V GE ±15V, T j=25°C 1000 t OFF t ON 1000 Switching time vs. Collector current V CC =600V, R G =9.1 Ω , V GE =±15V, T j=125°C t OFF t ON tf tr [nsec] ON, t r, t OFF , t f 100 ON, t r, t OFF , t f [nsec] 100 tf tr Switching time : t 10 0 50 100 150 200 Collector current : I C [ A] Switching time : t 10 0 50 100 150 200 Collector current : I C [ A] Switching Time vs. R G V CC =600V, I C =100A, V GE =±15V, T j=25°C t OFF 1000 Dynamic Input Characteristics T j=25°C 25 [ns] [V] V CC =400V 800 600V 20 t ON 1000 ON, t r, t OFF , t f CE Collector-Emitter Voltage : V 600 15 tr tf 400 10 200 100 5 0 10 Gate Resistance : R G [ Ω ] 0 400 800 1200 Gate Charge : Q G [ nC] 0 Forward Current vs. Forward Voltage V GE =0V 250 Reverse Recovery Characteristics t rr, I rr v s. I F t rr [A] [A] rr rr 200 T j=125°C 25°C [ns] 125°C t rr 25°C 100 I rr 125°C I rr 25°C Reverse Recovery Current : I F 100 50 Reverse Recovery Time 150 Forward Current : I :t 0 0 1 2 3 4 5 Forward Voltage : V F [ V] 10 0 50 100 150 200 Forward Current : I F [ A] Reversed Biased Safe Operating Area Transient Thermal Resistance 1 Diode 1000 +V GE =15V, -V GE < 15V, T j< 125°C, R G > 9.1 Ω [°C/W] [A] 800 IGBT 0,1 th(j-c) Collector Current : I C 600 SCSOA (non-repetitive pulse) Thermal resistance : R 400 0,01 200 RBSOA (Repetitive pulse) 0,001 0 ,001 0 0,01 0,1 1 0 200 400 600 800 1000 1200 Pulse Width : PW [s] Collector-Emitter Voltage : V CE [ V] Gate-Emitter Voltage : V Switching Time : t GE [V] 800V Switching loss vs. Collector current V CC =600V, R G =9.1 Ω , V GE =±15V 40 Capacitance vs. Collector-Emitter voltage T j=25°C [mJ/cycle] 30 E O N 1 25°C E O F F 1 25°C C oes , C res [nF] ON,E OFF ,E rr 10 C ies E O N 2 5°C Switching loss : E Capacitance : C ies , 20 E O F F 2 5°C 10 1 Co e s C res E rr 1 25°C E rr 2 5°C 0 0 50 100 150 200 0 5 10 15 20 25 30 35 C ollector Current : I C [ A] Collector-Emitter Voltage : V CE [ V] Fuji Electric GmbH Lyoner Straße 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com