2MBI100P-140

2MBI 100P-140 IGBT MODULE ( P-Series ) n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability 2-Pack IGBT 1400V 100A n Outline Drawing n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25°C) Symbols VCES VGES Continuous TC=25°C IC Continuous TC=80°C 1ms TC=25°C IC PULSE 1ms TC=80°C -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 1400 ± 20 150 100 300 200 100 200 780 +150 -40 ∼ +125 2500 3.5 3.5 Units V V n Equivalent Circuit Collector Current A Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque W °C °C V Nm Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1400V VCE=0V VGE=± 20V VGE=20V IC=100mA Tj= 25°C VGE=15V IC=100A Tj=125°C VGE=15V IC=100A VGE=0V VCE=10V f=1MHz VCC=600V IC=100A VGE=± 15V RG=9.1Ω IF=100A VGE=0V IF=100A Min. Typ. Max. 2.0 400 9.0 3.0 Units mA µA V V pF 1.2 0.6 1.0 0.3 3.3 350 6.0 8.0 2.7 3.3 10000 1500 650 µs V ns 2.4 • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.16 0.33 Units °C/W 0.025 2MBI 100P-140 Collector Current vs. Collector-Emitter Voltage 250 T j= 2 5 ° C 250 T j= 1 2 5 ° C V G E= 2 0 V 1 5 V 2-Pack IGBT 1400V 100A Collector Current vs. Collector-Emitter Voltage [A] [A] 200 200 V GE= 2 0 V 1 5 V 12V 12V 150 C Collector Current : I Collector Current : I C 150 100 11V 100 11V 50 10V 0 0 1 2 3 4 5 Collector-Emitter Voltage : V CE [ V] 6 50 10V 0 0 1 2 3 4 5 Collector-Emitter Voltage : V CE [ V] 6 Collector-Emitter vs. Gate-Emitter Voltage T j= 2 5 ° C Collector-Emitter vs. Gate-Emitter Voltage T j= 1 2 5 ° C [V] CE Collector Emitter Voltage : V 6 Collector Emitter Voltage : V 8 CE [V] 10 10 8 6 I C= 2 0 0 A 4 I C= 1 0 0 A 2 I C= 5 0 A 4 IC= 2 0 0 A 2 IC= 1 0 0 A IC= 5 0 A 0 0 5 10 15 20 Gate-Emitter Voltage : V G E [ V] 25 0 0 5 10 15 20 Gate-Emitter Voltage : V GE [ V] 25 Switching Time vs. Collector Current V CC = 6 0 0 V , R G=9,1 Ω , V GE = ± 1 5 V , T j= 2 5 ° C Switching Time vs. Collector Current V CC = 6 0 0 V , R G =9,1 Ω , V GE = ± 1 5 V , T j= 1 2 5 ° C , t r, t off , t f [nsec] , t r, t off , t f [nsec] 1000 t on tr toff 1000 ton tr toff on on Switching Time : t 100 tf Switching Time : t 100 tf 10 0 50 100 150 200 Collector Current: I C ( A) 10 0 50 100 150 200 Collector Current: I C ( A) 2MBI 100P-140 Switching Time vs. R G V C C=600V, I C = 1 0 0 A , V G E = ± 1 5 V , T j= 2 5 ° C 10000 1000 T j= 2 5 ° C 2-Pack IGBT 1400V 100A Collector Current vs. Collector-Emitter Voltage 25 V C C= 4 0 0 , 6 0 0 , 8 0 0 V 20 Switching Time : t on t r, t off t f [nsec] , , [V] t on tr 1000 t off GE 800 Collector-Emitter-Voltage : V 600 15 100 tf 400 10 200 5 10 10 Gate Resistance : R G [Ω ] 100 0 0 200 400 G a t e C h a r g e : Q g ( nC) 600 0 800 Forward Voltage vs. Forward Current 250 V GE= 0 V 1000 T j= 1 2 5 ° C 25°C Reverse Recovery Characteristics t rr , I rr v s. I F [A] 200 Reverse Recovery Current : I F Reverse Recovery Time : t rr [nsec] rr [A] Forward Current : I 150 t rr = 1 2 5 ° C 100 t rr= 2 5 ° C I rr= 1 2 5 ° C I rr= 2 5 ° C 100 50 0 0 1 2 Forward Voltage : V F [ V] 3 4 10 0 50 100 150 200 Forward Current : I F [ A] Reverse Biased Safe Operating Area Transient Thermal Resistance 1200 + V G E=15V, -V G E ≤ 15V, T j≤ 125°C, R G ≥ 9,1 Ω [°C/W] 10 0 1000 th(j-c) [A] SCSOA 800 (non-repetitive pulse) FWD 10 -1 Thermal Resistance : R IGBT Collector Current : I C 600 400 RBSOA (Repetitive pulse) 10 -2 200 10 -3 0 -3 10 10 -2 10 -1 10 0 0 200 400 600 800 1000 1200 1400 1600 Pulse Width : P W [ sec] Collector-Emitter Voltage : V CE [ V] Gate-Emitter Voltage : V GE [V] 2MBI 100P-140 Switching Loss vs. Collector Current 40 V C C= 6 0 0 V , R G =9,1 Ω , V G E= ± 1 5 V E on 1 2 5 ° C 30 E on 2 5 ° C 100 T j= 2 5 ° C 2-Pack IGBT 1400V 100A Capacitance vs. Collector-Emitter Voltage , E off , E rr [mJ/cycle] , C oes , C res [nF] 10 C ies on 20 E off 1 2 5 ° C 10 Switching Loss : E Capacitance: C ies 1 C oes C res E off 2 5°C E rr 1 2 5 ° C E rr 2 5°C 0 0 50 100 150 Collector Current : I C [ A] 200 0,1 0 5 10 15 20 25 30 35 Collector Emitter Voltage : V CE [ V] For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com