2MBI100SC-120

2MBI100SC-120 1200V / 100A 2 in one-package Features · High speed switching · Voltage drive · Low inductance module structure IGBT Module Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Symbol VCES VGES Tc=25°C IC Tc=80°C Tc=25°C IC pulse Tc=80°C -IC -IC pulse PC Tj Tstg V is Mounting *2 Terminals *2 Rating 1200 ±20 150 100 300 200 100 200 780 +150 -40 to +125 AC 2500 (1min. ) 3.5 3.5 Unit V V A A A A A A W °C °C V N·m N·m Equivalent Circuit Schematic C2E1 C1 E2 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage *1 Screw torque G1 E1 G2 E2 *1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : 2.5 to 3.5 N·m(M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. Max. – – 2.0 – – 0.4 5.5 7.2 8.5 – 2.3 2.6 – 2.8 – – 12000 – – 2500 – – 2200 – – 0.35 1.2 – 0.25 0.6 – 0.1 – – 0.45 1.0 – 0.08 0.3 – 2.3 3.0 – 2.0 – – – 0.35 Characteristics Min. Typ. – – – – – 0.05 Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=100mA Tc=25° C VGE=15V, IC=100A Tc=125°C VGE=0V VCE=10V f=1MHz VCC =600V IC=100A VGE=±15V RG=9.1 ohm Tj=25°C Tj=125°C IF=100A Conditions Max. 0.16 0.33 – IGBT Diode the base to cooling fin °C/W °C/W °C/W IF=100A, VGE=0V Unit mA µA V V pF µs Turn-off time Forward on voltage Reverse recovery time V µs Thermal resistance characteristics Item Thermal resistance Unit *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 2 MBI100SC-120 Characteristics (Representative) Collector current vs. Collector-Emiiter voltage Tj= 25°C (typ.) 250 250 IGBT Module Collector current vs. Collector-Emiiter voltage Tj= 125°C (typ.) VGE= 20V15V 12V 200 200 VGE= 20V15V 12V Collector current : Ic [ A ] 150 10V Collector current : Ic [ A ] 150 10V 100 100 50 50 8V 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) 250 10 Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) Tj= 25°C 200 Tj= 125°C 150 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 100 4 Ic= 200A 2 Ic= 100A Ic=50A 50 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 50000 1000 Dynamic Gate charge (typ.) Vcc=600V, Ic=100A, Tj= 25°C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 10000 5000 Cies 600 15 1000 400 10 Coes Cres 200 5 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 200 400 600 800 Gate charge : Qg [ nC ] 0 1000 Gate - Emitter voltage : VGE [ V ] 2 MBI100SC-120 IGBT Module 1000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 9.1 ohm, Tj= 25°C Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 9.1ohm, Tj= 125°C 1000 toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton ton tr tr tf 100 100 tf 50 0 50 100 150 Collector current : Ic [ A ] 50 0 50 100 150 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V, Tj= 25°C 5000 ton 30 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=9.1ohm Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff 25 Switching time : ton, tr, toff, tf [ nsec ] tr 1000 Eon(125°C) 20 Eon(25°C) 15 Eoff(125°C) 10 Eoff(25°C) Err(125°C) 5 Err(25°C) 500 100 tf 50 1 10 Gate resistance : Rg [ohm] 100 300 0 0 50 100 Collector current : Ic [ A ] 150 200 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V, Tj= 125°C 70 Eon 60 250 Reverse bias safe operating area +VGE=15V, -VGE=9.1ohm, Tj=