2MBI1200U4G-120

http://www.fujielectric.com/products/semiconductor/ 2MBI1200U4G-120 IGBT MODULE (U series) 1200V / 1200A / 2 in one package High speed switching Voltage drive Low Inductance module structure Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Symbols VCES VGES Ic Collector current Ic pulse IGBT Modules Features Applications Maximum Ratings and Characteristics Items Collector-Emitter voltage Gate-Emitter voltage Conditions Tc=25°C Tc=80°C Tc=25°C Tc=80°C Continuous 1ms 1ms 1 device AC : 1min. -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso Mounting (*2) M6 Screw torque M8 Terminals (*3) M4 Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : Mounting 4.25~5.75 Nm (M6) Note *3: Recommendable Value : Main Terminals 8~10 Nm (M8) Sense Terminals 1.7~2.5 Nm (M4) Maximum ratings 1200 ±20 1600 1200 3200 2400 1200 2400 6250 150 -40 ~ +125 4000 5.75 10 2.5 Units V V A W °C VAC Nm Electrical characteristics (at Tj= 25°C unless otherwise specified) Symbols ICES IGES VGE (th) VCE (sat) (main terminal) VCE (sat) (chip) Cies ton tr toff tf VF (main terminal) VF (chip) trr R lead Symbols Rth(j-c) Rth(c-f) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on Turn-off Forward on voltage Reverse recovery Lead resistance, terminal-chip Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 1200mA VGE = 15V IC = 1200A VCE = 10V, VGE = 0V, f = 1MHz RG on = 3.3Ω VCC = 600V RG off = 0.82Ω IC = 1200A VGE = ±15V Tj = 125ºC Tj=25°C Tj=125°C VGE = 0V IF = 1200A Tj=25°C Tj=125°C IF = 1200A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics min. typ. max. 1.0 1600 5.5 6.5 7.5 2.22 2.41 2.42 1.90 2.05 2.10 135 1.35 0.65 0.80 0.20 1.97 2.16 2.07 1.65 1.80 1.75 0.45 0.27 3450 Characteristics min. typ. max. 0.020 0.033 0.006 - Units mA nA V V nF µs V µs mΩ Units °C/W Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance (1device) Conditions IGBT FWD with Thermal Compound (*4) Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 2MBI1200U4G-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25ºC,chip 2800 2400 Collector current : Ic[A] 2000 1600 1200 800 400 0 0.0 10V VGE=20V 15V 12V Collector current : Ic [A] 2800 2400 2000 1600 1200 800 400 0 0.0 http://www.fujielectric.com/products/semiconductor/ IGBT Modules Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C, chip VGE=20V 15V 12V 10V 8V 1.0 2.0 3.0 4.0 5.0 8V 1.0 2.0 3.0 4.0 5.0 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=+15V,chip 2800 2400 Collector current : Ic [A] 2000 1600 1200 800 400 0 0.0 Collector - Emitter voltage : VCE [ V ] Tj=25°C Tj=125°C Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25ºC,chip 10 8 6 4 Ic=2400A Ic=1200A Ic=600A 2 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 1000 Capacitance : Cies, Coes, Cres [ nF ] Cies 100 1000 Collector-Emitter voltage : VCE[V] 800 600 400 200 0 0 10 20 30 0 VCE Dynamic Gate charge (typ.) VCC=600V, IC=1200A, Tj= 25°C 25 Gate-Emitter voltage:VGE[V] 20 VGE 15 10 5 0 6000 10 Cres Coes 1 Collector-Emitter voltage : VCE [V] 1000 2000 3000 4000 5000 Gate charge : Qg [ nC ] 2 2MBI1200U4G-120 http://www.fujielectric.com/products/semiconductor/ IGBT Modules Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RGon=3.3Ω, RGoff=0.82Ω, Tj= 125°C 1.8 Switching time : ton, tr, toff, tf [ us ] Switching time : ton tr, toff, tf [ us ] , 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 400 800 1200 1600 2000 Collector current : Ic [ A ] tr tf 0.0 0 ton toff 6.0 Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=1200A,VGE=±15V, Tj= 125°C ton 5.0 4.0 3.0 2.0 1.0 tf 2 4 6 8 10 12 14 16 18 tr tof Gate resistance : RG [ Ω ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RGon=3.3Ω, RGoff=0.82Ω, Tj= 125°C Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 500 450 400 350 300 250 200 150 100 50 0 0 400 800 1200 1600 2000 Collector current : Ic [ A ] , Forward current : IF [ A ] Err Eon Eoff 1000 900 800 700 600 500 400 300 200 100 0 0 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=1200A,VGE=±15V, Tj= 125°C Eon Eoff Err 2 4 6 8 10 12 14 16 18 Gate resistance : RG [ Ω ] Reverse bias safe operating area (max.) ± VGE=15V ,Tj = 125°C / chip 2800 2400 2000 1600 1200 800 400 0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 3 2MBI1200U4G-120 http://www.fujielectric.com/products/semiconductor/ IGBT Modules Forward current vs. Forward on voltage (typ.) chip 2800 Reverse recovery current : Irr [ A ] 2400 Forward current : IF [ A ] 2000 1600 1200 800 400 0 0.0 Tj=25ºC Tj=125ºC 900 800 700 600 500 400 300 200 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, RGon=3.3Ω, Tj=125ºC 1.8 Reverse recovery time : trr [us] Irr 1.6 1.4 1.2 1.0 0.8 trr 0.6 0.4 0.2 400 800 1200 1600 0.0 2000 Forward on voltage : VF [ V ] Forward current : IF [ A ] Transient thermal resistance (max.) Thermal resistanse : Rth(j-c) [ °C/W ] 0.100 FWD IGBT 0.010 0.001 0.001 0.010 0.100 1.000 Pulse width : PW [ sec ] 4 2MBI1200U4G-120 Outline Drawings, mm http://www.fujielectric.com/products/semiconductor/ IGBT Modules Equivalent Circuit Schematic main emitter sense emitter main collector sense collector gate sense collector main emitter gate sense emitter main collector 5 2MBI1200U4G-120 http://www.fujielectric.com/products/semiconductor/ IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. 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