2MBI150NE-120

IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) n Outline Drawing n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 1200 ± 20 150 300 150 300 1100 +150 -40 ∼ +125 2500 3.5 4.5 Units V V A W °C °C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=150mA VGE=15V IC=150A VGE=0V VCE=10V f=1MHz VCC=600V IC=150A VGE=± 15V RG=5.6Ω IF=150A VGE=0V IF=150A Min. Typ. Max. 2.0 30 7.5 3.3 Units mA µA V V pF 1.2 0.6 1.5 0.5 3.0 350 4.5 24000 8700 7740 0.65 0.25 0.85 0.35 µs V ns • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.11 0.33 Units °C/W 0.025 Collector current vs. Collector-Emitter voltage Tj=25°C Collector current vs. Collector-Emitter voltage Tj=125°C V G E =20V,15V,12V,10V 300 300 V G E =20V,15V,12V,10V, Collector current : Ic [A] Collector current : Ic [A] 200 200 8V 100 100 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector-Emitter voltage : V C E [ V] Collector-Emitter voltage : V C E [ V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C 10 10 CE [V] 8 CE [V] 8 Collector-Emitter voltage :V 6 Collector-Emitter voltage V 6 4 Ic= 300A 150A 4 Ic= 300A 2 75A 2 150A 75A 0 0 5 10 15 20 25 0 0 5 10 15 20 25 Gate-Emitter voltage : V G E [ V] Gate-Emitter voltage : V G E [ V] Switching time vs. Collector current Vcc=600V, RG=5.6 Ω , V G E =±15V, Tj=25°C 1000 Switching time vs. Collector current Vcc=600V, R G =5.6 Ω , V G E =±15V, Tj=125°C toff ton tf tr toff ton 1000 Switching time : ton, tr, toff, tf [nsec] 100 Switching time : ton, tr, toff, tf [nsec] 300 tf tr 100 10 0 100 200 10 0 100 200 300 Collector current : Ic [A] Collector current : Ic [A] Switching time vs. RG Vcc=600V, Ic=150A, V G E =±15V, Tj=25°C 1000 Dynamic input characteristics Tj=25°C 25 Vcc=400V 800 Switching time : ton, tr, toff, tf [nsec] toff ton CE [V] 600V 800V 20 1000 Collector-Emitter voltage : V 600 15 tr tf 400 10 200 100 5 10 0 0 0 500 1000 1500 2000 Gate resistance : RG [ Ω ] Gate charge : Qg [nC] Forward current vs. Forward voltage VGE=OV Reverse recovery characteristics trr, Irr vs. I F trr Tj=125°C 300 25°C 125°C trr Reverse recovery current : Irr [A] : trr [nsec] Forward current : IF [A] 25°C Irr 100 125°C Irr 25°C 100 0 0 1 2 3 4 5 Reverse recovery time 10 0 200 100 200 300 Forward voltage : V F [ V] Forward current : I F [ A] Reversed biased safe operating area Transient thermal resistance 1400 +VGE=15V, -V G E < 15V, Tj< 125°C, R G > 5.6 Ω Diode Thermal resistance : Rth(j-c) [°C/W] 1200 0,1 Collector current : Ic [A] IGBT 1000 SCSOA 800 (non-repetitive pulse) 0,01 600 400 200 RBSOA (Repetitive pulse) 0,001 0 ,001 0 0,01 0,1 1 0 200 400 600 800 1000 1200 Pulse width : PW [sec] Collector-Emitter voltage : V C E [ V] Switching loss vs. Collector current Vcc=600V, R G =5.6 Ω , V G E =±15V 50 100 Capacitance vs. Collector-Emitter voltage Tj=25°C Eon 125°C [mJ/cycle] 40 Capacitance : Cies, Coes, Cres [nF] Eoff 125°C Cies 10 30 Switching loss : Eon,Eoff,Err Eon 25°C 20 Eoff 25°C Err 125°C Coes 1 Cres 10 Err 25°C 0 0 50 100 150 200 250 300 0 5 10 15 20 25 30 35 Collector Current : Ic [A] Collector-Emitter Voltage : V C E [ V] Fuji Electric GmbH Lyoner Straße 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com