2MBI150P-140

2MBI 150P-140 IGBT MODULE ( P-Series ) n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability 2-Pack IGBT 1400V 150A n Outline Drawing n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25°C) Symbols VCES VGES Continuous TC=25°C IC Continuous TC=80°C 1ms TC=25°C IC PULSE 1ms TC=80°C -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 1400 ± 20 200 150 400 300 150 300 1100 +150 -40 ∼ +125 2500 3.5 3.5 Units V V n Equivalent Circuit Collector Current A Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque W °C °C V Nm Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1400V VCE=0V VGE=± 20V VGE=20V IC=150mA Tj= 25°C VGE=15V IC=150A Tj=125°C VGE=15V IC=150A VGE=0V VCE=10V f=1MHz VCC=600V IC=150A VGE=± 15V RG=5.6Ω IF=150A VGE=0V IF=150A Min. Typ. Max. 2.0 400 9.0 3.0 Units mA µA V V pF 1.2 0.6 1.0 0.3 3.3 350 6.0 8.0 2.7 3.3 15000 2000 1000 µs V ns 2.4 • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.11 0.24 Units °C/W 0.025 2MBI 150P-140 Collector Current vs. Collector-Emitter Voltage 400 T j= 2 5 ° C 400 T j= 1 2 5 ° C 2-Pack IGBT 1400V 150A Collector Current vs. Collector-Emitter Voltage [A] 300 12V [A] V GE= 2 0 V 1 5 V 300 V GE= 2 0 V 15V C Collector Current : I Collector Current : I C 12V 200 11V 100 10V 200 11V 100 10V 0 0 1 2 3 4 5 Collector-Emitter Voltage : V CE [ V] 6 0 0 1 2 3 4 5 Collector-Emitter Voltage : V CE [ V] 6 Collector-Emitter vs. Gate-Emitter Voltage T j= 2 5 ° C Collector-Emitter vs. Gate-Emitter Voltage T j= 1 2 5 ° C [V] CE CE [V] Collector Emitter Voltage : V 10 10 Collector Emitter Voltage : V 8 8 6 6 I C= 3 0 0 A 4 IC= 3 0 0 A 2 IC= 1 5 0 A IC= 7 5 A 0 0 5 10 15 20 Gate-Emitter Voltage : V G E [ V] 25 4 2 I C= 1 5 0 A I C= 7 5 A 0 0 5 10 15 20 Gate-Emitter Voltage : V G E [ V] 25 Switching Time vs. Collector Current V CC = 6 0 0 V , R G=5,6 Ω , V GE = ± 1 5 V , T j= 2 5 ° C Switching Time vs. Collector Current V CC = 6 0 0 V , R G =5,6 Ω , V GE = ± 1 5 V , T j= 1 2 5 ° C , t r, t off , t f [nsec] 1000 , t r, t off , t f [nsec] t on 1000 tr t off t on tr t off tf on on Switching Time : t 100 Switching Time : t tf 100 10 0 100 200 300 Collector Current: I C ( A) 10 0 100 200 300 Collector Current: I C ( A) 2MBI 150P-140 Switching Time vs. R G V CC =600V, I C =150A, V GE = ± 1 5 V , T j= 2 5 ° C 10000 1000 T j= 2 5 ° C 2-Pack IGBT 1400V 150A Collector Current vs. Collector-Emitter Voltage 25 V C C= 4 0 0 , 6 0 0 , 8 0 0 V 20 Switching Time : t , t , t , t f [nsec] on r off [V] t on tr t off GE 800 Collector-Emitter-Voltage : V 1000 600 15 100 tf 400 10 200 5 10 1 10 Gate Resistance : R G [Ω ] 100 0 0 200 400 600 800 1000 G a t e C h a r g e : Q g ( nC) 0 1200 Forward Voltage vs. Forward Current 400 V GE= 0 V 1000 Reverse Recovery Characteristics t rr , I rr v s. I F [A] Reverse Recovery Current : I F rr 300 T j= 1 2 5 ° C rr 25°C [nsec] [A] Reverse Recovery Time : t Forward Current : I t rr= 1 2 5 ° C trr = 2 5 ° C Irr = 1 2 5 ° C I rr = 2 5 ° C 200 100 100 0 0 1 2 Forward Voltage : V F [ V] 3 4 10 0 100 200 300 Forward Current : I F [ A] Reverse Biased Safe Operating Area Transient Thermal Resistance 2500 + V G E=15V, -V G E ≤ 15V, T j≤ 125°C, R G ≥ 4,7 Ω SCSOA [°C/W] FWD 10 -1 2000 C (non-repetitive pulse) th(j-c) IGBT [A] Thermal Resistance : R Collector Current : I 1500 1000 10 -2 500 RBSOA (Repetitive pulse) 10 -3 0 -3 10 10 -2 10 -1 10 0 0 200 400 600 800 1000 1200 1400 1600 Pulse Width : P W [ sec] Collector-Emitter Voltage : V CE [ V] Gate-Emitter Voltage : V GE [V] 2MBI 150P-140 Switching Loss vs. Collector Current 80 V C C = 6 0 0 V , R G =5,6 Ω , V G E = ± 1 5 V 100 T j= 2 5 ° C 2-Pack IGBT 1400V 150A Capacitance vs. Collector-Emitter Voltage , E off , E rr [mJ/cycle] E on 1 2 5 ° C 60 , C oes , C res [nF] 10 C ies 40 Switching Loss : E Capacitance: C E on 2 5 ° C E off 1 2 5 ° C ies on 1 C oes C res 20 E off 2 5°C E rr 1 2 5 ° C E rr 0 0 50 100 150 200 Collector Current : I C [ A] 250 300 2 5°C 0,1 0 5 10 15 20 25 30 Collector Emitter Voltage : V CE [ V] 35 For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com