2MBI200-120-01

2MBI200NB-120-01 1200V / 200A 2 in one-package Features · VCE(sat) classified for easy parallel connection · High speed switching · Voltage drive · Low inductance module structure IGBT Module Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Equivalent Circuit Schematic C2E1 Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous current 1ms 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Rating Unit Symbol 1200 V VCES ±20 V VGES 200 A IC 400 A IC pulse 200 A -I C 400 A -IC pulse 1500 W PC +150 °C Tj -40 to +125 °C Tstg AC 2500 (1min.) V Vis 3.5 N·m Mounting *1 4.5 N·m Terminals *2 C1 E2 ¤ ¤ G1 E1 G2 ¤ Current control circuit E2 VCE(sat) classification Rank F A B C D E Lenge 2.25 to 2.50V 2.40 to 2.65V 2.55 to 2.80V 2.70 to 2.95V 2.85 to 3.10V 3.00 to 3.30V Conditions Ic = 200A VGE = 15V Tj = 25°C *1 : Recommendable value : 2.5 to 3.5 N·m (M5) or (M6) *2 : Recommendable value : 3.5 to 4.5 N·m (M6) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Characteristics Min. Typ. – – 4.5 – – – – – – – – – – – – – – 32000 11600 10320 0.65 0.25 0.85 0.35 – – Max. 2.0 30 7.5 3.3 – – – 1.2 0.6 1.5 0.5 3.0 0.35 Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=200mA VGE=15V, IC=200A VGE=0V VCE=10V f=1MHz VCC=600V IC=200A VGE=±15V RG=4.7ohm IF=200A, VGE=0V IF=200A Unit mA µA V V pF µs V µs Thermal resistance characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)* Characteristics Min. Typ. – – – – – 0.025 Conditions Max. 0.085 0.18 – IGBT Diode the base to cooling fin °C/W °C/W °C/W Unit Thermal resistance * : This is the value which is defined mounting on the additional cooling fin with thermal compound 2MBI200NB-120-01 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25°C 500 500 IGBT Module Collector current vs. Collector-Emitter voltage Tj=125°C 400 400 Collector current : Ic [A] Collector current : Ic [A] 300 300 200 200 100 100 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C 10 VCE [V] VCE [V] Collector-Emitter voltage : 0 5 10 15 20 25 10 8 8 Collector-Emitter voltage : 6 6 4 4 2 2 0 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=±15V, Tj=25°C 1000 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] Switching time vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=±15V, Tj=125°C 100 100 10 0 100 200 Collector current : Ic [A] 300 400 10 0 100 200 Collector current : Ic [A] 300 400 2MBI200NB-120-01 IGBT Module Switching time vs. RG Vcc=600V, Ic=200A, VGE=±15V, Tj=25°C 1000 Dynamic input characteristics Tj=25°C 25 Switching time : ton, tr, toff, tf [n sec.] Collector-Emitter voltage : VCE [V] 800 20 1000 600 15 400 10 200 5 100 0 10 Gate resistance : RG [ohm] 0 500 1000 1500 2000 2500 Gate charge : Qg [nC] 0 Forward current vs. Forward voltage VGE=0V 500 Reverse recovery characteristics trr, Irr, vs. IF 300 200 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 400 Forward current : IF [A] 100 100 0 0 1 2 3 4 5 0 100 200 Forward current : IF [A] 300 400 Forward voltage : VF [V] Transient thermal resistance 2000 Reversed biased safe operating area +VGE=15V, -VGE < 15V, Tj < 125°C, RG > 4.7ohm = = = Thermal resistance : Rth (j-c) [°C/W] 1600 0.1 Collector current : Ic [A] 1200 0.01 800 400 0.001 0.001 0.01 0.1 1 Pulse width : PW [sec.] 0 0 200 400 600 800 1000 1200 Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] 2MBI200NB-120-01 IGBT Module Switching loss vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=±15V Capacitance vs. Collector-Emitter voltage Tj=25°C 60 Switching loss : Eon, Eoff, Err [mJ/cycle] 100 50 Capacitance : Cies, Coes, Cres [nF] 40 30 10 20 10 0 0 100 200 Collector current : Ic [A] 300 400 1 0 5 10 15 20 25 30 35 Collector-Emitter voltage : VCE [V] Outline Drawings, mm